amb qimonda
Abstract: PC2-6400F-555 14240 HYS72T512420EFA-3S-C DDR2 Mechanical Dimensions HYS72T512420EFA PC2-5300-5-5-5 PC2-6400-666
Text: October 2007 HYS72T512420EFA–[25F/3S]–C 240-Pin Fully-Buffered DDR2 SDRAM Modules DDR2 SDRAM RoHS Compliant Products Internet Data Sheet Rev.1.20 Internet Data Sheet HYS72T512420EFA–[25F/3S]–C Fully-Buffered DDR2 SDRAM Modules Revision History: Rev.1.20, 2007-10-19
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HYS72T512420EFA
25F/3S]
240-Pin
PC2-6400F"
PC2-5300F"
amb qimonda
PC2-6400F-555
14240
HYS72T512420EFA-3S-C
DDR2 Mechanical Dimensions
HYS72T512420EFA
PC2-5300-5-5-5
PC2-6400-666
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Untitled
Abstract: No abstract text available
Text: November 2007 HYS72T512420EFD–25F–C HYS72T512420EFD–3S–C 240-Pin Fully-Buffered DDR2 SDRAM Modules DDR2 SDRAM RoHS Compliant Products Internet Data Sheet Rev.1.10 Internet Data Sheet HYS72T512420EFD–[25F/3S]–C Fully-Buffered DDR2 SDRAM Modules
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HYS72T512420EFD
240-Pin
HYS72T512420EFD
25F/3S]
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Untitled
Abstract: No abstract text available
Text: Data Sheet 200-pin DDR SDRAM Modules Kodiak4 Rev.1.1 18.07.2006 – Professional Line SO-DIMM 1GB DDR PC 3200 / 2700 / 2100 in COB Technique – RoHS complaint Options: Grade C Grade E Grade I Grade W 0°C to +70°C 0°C to +85°C -25°C to +85°C -40°C to +85°C
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200-pin
64-bit
MT46V64M8T37Z
D-12681
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Untitled
Abstract: No abstract text available
Text: Data Sheet 200-pin DDR SDRAM Modules Kodiak4 Rev.1.1 18.07.2006 – Professional Line SO-DIMM 512MB DDR PC 3200 / 2700 / 2100 in COB Technique – RoHS complaint Options: Grade C Grade E Grade I Grade W 0°C to +70°C 0°C to +85°C -25°C to +85°C -40°C to +85°C
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200-pin
512MB
64-bit
MT46V64M8T37Z
D-12681
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H5DU5162
Abstract: No abstract text available
Text: Data Sheet Rev.1.1 09.06.2010 256MB DDR – SDRAM SoDIMM 200PIN SoDIMM Features: SDN03264C1CE1HY-50R 256MB PC-3200 in FBGA Technique RoHS compliant Options: • Frequency / Latency DDR 400 MHz CL3 DDR 333 MHz CL2.5 • Module densities 256MB with 4 dies and 1 rank
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256MB
200PIN
SDN03264C1CE1HY-50R
PC-3200
D-12681
H5DU5162
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Untitled
Abstract: No abstract text available
Text: Data Sheet Rev.1.1 09.06.2010 256MB DDR – SDRAM SoDIMM 200PIN SoDIMM Features: SDN03264C1CE1HY-50R 256MB PC-3200 in FBGA Technique RoHS compliant Options: • Frequency / Latency DDR 400 MHz CL3 DDR 333 MHz CL2.5 • Module densities 256MB with 4 dies and 1 rank
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256MB
200PIN
SDN03264C1CE1HY-50R
PC-3200
D-12681
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MT46V32M16P
Abstract: No abstract text available
Text: Data Sheet Rev.1.0 26.05.2008 512MB DDR – SDRAM SoDIMM 200PIN SoDIMM Features: SDN06464E1C62MT-50R 512MB PC-3200 in TSOP Technique RoHS compliant Options: 1 Frequency / Latency DDR 400 MHz CL3 DDR 333 MHz CL2.5 1 Module densities 512MB with 8 dies and 2 ranks
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512MB
200PIN
SDN06464E1C62MT-50R
PC-3200
D-12681
MT46V32M16P
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Untitled
Abstract: No abstract text available
Text: Data Sheet Rev.1.0 29.01.2009 256MB DDR SDRAM SoDIMM Fox 3 200Pin SO-DIMM Features: 1 1 1 1 Frequency / Latency DDR 400 MHz CL3 DDR 333 MHz CL2.5 DDR 266 MHz CL2.5 Module densities 256MB with 8 dies and 1 rank 512MB with 16 dies and 2 ranks Standard Grade
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256MB
200Pin
512MB
D-12681
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Untitled
Abstract: No abstract text available
Text: Data Sheet Rev.1.0 21.05.2008 512MB ECC DDR – SDRAM DIMM 184PIN ECC DIMM Features: SDU06472B5BF1MT-50R 512MB PC-3200 in TSOP Technique RoHS compliant Options: ̇ Frequency / Latency DDR 400 MHz CL3 DDR 333 MHz CL2.5 DDR 266 MHz CL2.5 ̇ Module densities
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512MB
184PIN
SDU06472B5BF1MT-50R
PC-3200
D-12681
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Untitled
Abstract: No abstract text available
Text: Data Sheet Rev.1.0 09.04.2008 512MB DDR – SDRAM DIMM 184PIN DIMM Features: SDU06464B5B61MT-50R 512MB PC-3200 in TSOP Technique RoHS compliant Options: 1 Frequency / Latency DDR 400 MHz CL3 DDR 333 MHz CL2.5 DDR 266 MHz CL2.5 1 Module densities 512MB with 8 dies and 1 rank
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512MB
184PIN
SDU06464B5B61MT-50R
PC-3200
D-12681
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MT36VDDF25672G
Abstract: No abstract text available
Text: 1GB, 2GB x72, ECC, DR 184-Pin DDR RDIMM Features DDR SDRAM RDIMM MT36VDDF12872 – 1GB MT36VDDF25672 – 2GB For component data sheets, refer to Micron’s Web site: www.micron.com Features Figure 2: • 184-pin, registered dual in-line memory module (RDIMM)
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184-Pin
MT36VDDF12872
MT36VDDF25672
184-pin,
PC2100,
PC2700,
PC3200
09005aef80772fd2/Source:
09005aef8075ebf6
DDF36C128
MT36VDDF25672G
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Untitled
Abstract: No abstract text available
Text: Data Sheet Rev.1.1 18.09.2008 1024MB DDR – SDRAM DIMM 184PIN DIMM Features: SDU12864H1B61MT-50R 1024MB PC-3200 in TSOP Technique RoHS compliant Options: § Frequency / Latency DDR 400 MHz CL3 DDR 333 MHz CL2.5 DDR 266 MHz CL2.5 § Module densities 1024MB with 16 dies and 2 ranks
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1024MB
184PIN
SDU12864H1B61MT-50R
PC-3200
D-12681
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Untitled
Abstract: No abstract text available
Text: Data Sheet Rev.1.0 29.01.2009 512MB DDR SDRAM SoDIMM Fox 3 200Pin SO-DIMM Features: 1 1 Frequency / Latency DDR 400 MHz CL3 DDR 333 MHz CL2.5 DDR 266 MHz CL2.5 Marking -50 -60 -75 1 Module densities 256MB with 8 dies and 1 rank 512MB with 16 dies and 2 ranks
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512MB
200Pin
256MB
D-12681
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MT18VDDF12872Y-335
Abstract: No abstract text available
Text: 512MB, 1GB x72, ECC, SR 184-Pin DDR SDRAM RDIMM Features DDR SDRAM RDIMM MT18VDDF6472 – 512MB1 MT18VDDF12872 – 1GB For component data sheets, refer to Micron’s Web site: www.micron.com Features Figure 2: • 184-pin, registered dual in-line memory module
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512MB,
184-Pin
MT18VDDF6472
512MB1
MT18VDDF12872
184-pin,
PC2100,
PC2700,
PC3200
512MB
MT18VDDF12872Y-335
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Untitled
Abstract: No abstract text available
Text: 1GB, 2GB x72, DR 240-Pin DDR2 SDRAM FBDIMM Features DDR2 SDRAM FBDIMM MT18HTF12872FDZ – 1GB MT18HTF25672FDZ – 2GB Features Figure 1: 240-Pin FBDIMM (MO-256 R/C B) • 240-pin, DDR2 fully buffered dual in-line memory module (FBDIMM) • Fast data transfer rates: PC2-4200, PC2-5300, or
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240-Pin
MT18HTF12872FDZ
MT18HTF25672FDZ
MO-256
240-pin,
PC2-4200,
PC2-5300,
PC2-6400
09005aef83d4d75e
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432 BL
Abstract: No abstract text available
Text: 512MB, 1GB x64, DR 200-Pin DDR SODIMM Features DDR SDRAM SODIMM MT16VDDF6464H – 512MB MT16VDDF12864H – 1GB For component data sheets, refer to Micron’s Web site: www.micron.com Features Figure 2: • 200-pin, small-outline dual in-line memory module
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512MB,
200-Pin
MT16VDDF6464H
512MB
MT16VDDF12864H
200-pin,
PC2100
PC2700
512MB
09005aef80a77a90/Source:
432 BL
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JESD206
Abstract: No abstract text available
Text: 4GB x72, QR 240-Pin DDR2 SDRAM FBDIMM Features DDR2 SDRAM FBDIMM MT36HTF51272FDZ – 4GB Features Figure 1: 240-Pin FBDIMM (MO-256) • 240-pin, DDR2 fully buffered DIMM (FBDIMM) • Fast data transfer rates: PC2-4200, PC2-5300, or PC2-6400 • 4GB (512 Meg x 72)
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240-Pin
MT36HTF51272FDZ
240-pin,
PC2-4200,
PC2-5300,
PC2-6400
09005aef8409299f
htf36c512x72fdz
JESD206
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BA 2515
Abstract: MT18HTF25672FDY-667E1D4
Text: 1GB, 2GB x72, DR 240-Pin DDR2 SDRAM FBDIMM Features DDR2 SDRAM FBDIMM MT18HTF12872FDZ – 1GB MT18HTF25672FDZ – 2GB Features Figure 1: 240-Pin FBDIMM (MO-256 R/C B) • 240-pin, DDR2 fully buffered dual in-line memory module (FBDIMM) • Fast data transfer rates: PC2-4200, PC2-5300, or
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240-Pin
MT18HTF12872FDZ
MT18HTF25672FDZ
240-pin,
PC2-4200,
PC2-5300,
PC2-6400
09005aef83d4d75e
htf18c128
256x72fdz
BA 2515
MT18HTF25672FDY-667E1D4
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DDR2 184 pin out
Abstract: No abstract text available
Text: 1GB x72, SR 240-Pin DDR2 SDRAM FBDIMM Features DDR2 SDRAM FBDIMM MT9HTF12872FZ – 1GB • Transparent mode for DRAM test support • VDD = VDDQ = 1.8V for DRAM • VREF = 0.9V SDRAM command and address termination • VCC = 1.5V for AMB • VDDSPD = 3–3.6V for AMB and EEPROM
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240-Pin
MT9HTF12872FZ
240-pin,
PC2-5300
PC2-6400
09005aef83de8266
htf9c128x72fz
DDR2 184 pin out
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km48v2104bs
Abstract: No abstract text available
Text: KMM466F203BS1-L D R A M Mo d ul e ELECTRONICS KMM466F203BS1 -L & KMM466F213BS-L EDO Mode without buffer 2Mx64 based on 2Mx8, 2K & 4K Refresh, 3.3V, Low Power/Self-Refresh GENERAL DESCRIPTION FEATURES The Samsung KMM466F20 1 3BS1-L is a 2M bit x 64 Dynamic RAM high density memory module. The
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KMM466F203BS1-L
KMM466F203BS1
KMM466F213BS-L
2Mx64
KMM466F20
28-pin
300mil
144-pin
km48v2104bs
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Untitled
Abstract: No abstract text available
Text: NEW JE DEC SDR AM MO D U L E KMM466S804AT2 K M M 4 6 6 S 8 0 4 A T 2 SD RAM SODIMM 8Mx64 SDRAM SODIMM based on 4Mx16, 2Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD G E NE R AL DESCRIPTION FEATURE The Sam sung KM M 466S804AT2 is a 8M bit x 64 Synchronous
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KMM466S804AT2
8Mx64
4Mx16,
466S804AT2
400mil
144-pin
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Untitled
Abstract: No abstract text available
Text: KMM37 2 V 4 0 0 B K D R A M Mo d u l e ELECTRO NICS KMM372V400BK/BS / KMM372V41OBK/BS Fast Page Mode 4Mx72 DRAM DIMM with ECC, 4K & 2K Refresh, 3.3V GENERAL DESCRIPTION FEATURES • Part Identification The Samsung KMM372V40 1 0B is a 4M bit x 72 Dynamic RAM high density memory module. The
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KMM37
KMM372V400BK/BS
KMM372V41OBK/BS
4Mx72
KMM372V40
KMM372V400BK
cycles/64ms
300mil
KMM372V41OBK
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Untitled
Abstract: No abstract text available
Text: ¡S HIN200 thru HIN213 +5V Powered RS-232 Transmitters/Receivers with 0.1 Microfarad External Capacitors February 1995 Features Description • Meets All RS-232C and V.28 Specifications T he H IN 200-H IN 213 family of R S -232 transmitters/receivers interface circuits m eet all EIA R S -2 32 C and V.28 specifica
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HIN200
HIN213
RS-232
RS-232C
200-H
HIN201
00ti0HB7
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1N4742A 12 volt zener diode
Abstract: MZPY12 MZPY47 BZX85C51 MOT zener diode, t2 diode zener 1n4742a MZPY24 MZPY15 MZPY13 MZPY33
Text: riOTOROLA SC D I O D E S / O P T O D b4E • b3b75SS 00fl5L*CH b7S ■ SECTION 4.2.4 DATA SHEETS ZENER VOLTAGE REGULATOR DIODES — continued Section 4.2.4.1 Axial Leaded — continued SECTION 4.2.4.1.2 1-1.3 WATT DO-41 GLASS MULTIPLE PACKAGE QUANTITY (MPQ)
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b3b75SS
DO-41
1N4728A
1N4764A
BZX85C3V3
BZX85C100
M-ZPY100
L3b7255
1N4742A 12 volt zener diode
MZPY12
MZPY47
BZX85C51 MOT
zener diode, t2
diode zener 1n4742a
MZPY24
MZPY15
MZPY13
MZPY33
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