Matsushita Miniature Relay s3 12v
Abstract: circuit diagram of laser based door opener Matsua relay 12V pc 144V DC Motor Speed Controller transistor SMD DF HAND DRYER CIRCUIT DIAGRAM SPARK quench LR26550 je1axn-dc24v-h automatic voltage stabilizer winding data
Text: JE-X JE-X RELAYS COMPACT ECONOMICAL POWER RELAYS 22 .866 UL File No.: E43028 CSA File No.: LR26550 14 .551 18.7 .736 • Compact size - Height Max. 18.7 mm .736 inch lower than JY relay 22.5 mm (.886 inch) • High contact capacity — 5A 125 V AC • Safety-oriented between coil and contact terminals
|
Original
|
E43028
LR26550
Matsushita Miniature Relay s3 12v
circuit diagram of laser based door opener
Matsua relay 12V pc
144V DC Motor Speed Controller
transistor SMD DF
HAND DRYER CIRCUIT DIAGRAM
SPARK quench
LR26550
je1axn-dc24v-h
automatic voltage stabilizer winding data
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SM-8 DUAL NPN MEDIUM POWER ZDT651 TRANSISTORS SS[JE - 1- NCIVEMEER I!WM . . . . .- j:~~: ~ PARTIMARKING DETAIL - T651 ABSOLUTE MAXIMUM I Collectc,r —— Ern;tter Base . Voltage -. \ oltage IOperatir}g Cc;Ilector and Storage Current Temperature
|
Original
|
ZDT651
OT223)
t30th
41111L-tt+
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DTC123 JE/JUA/JCA/JSA NPN Small Signal Transistor Small Signal Diode Features Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistor see equivalent circuit . The bias resistors consist of thin -film resistors with
|
Original
|
DTC123
OT-523
OT-323
31TYP
O-92S
|
PDF
|
TRANSISTOR SOT-23 marking JE
Abstract: transistor marking code e42 DTC123 sot-23 npn marking code 162 dtc123 equivalent transistor marking e42 code JE SOT23 Transistor A12 011 B NPN SOT23 Diode SOT-23 marking JE
Text: DTC123 JE/JUA/JCA/JSA NPN Small Signal Transistor Small Signal Diode Features Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistor see equivalent circuit . The bias resistors consist of thin -film resistors with
|
Original
|
DTC123
OT-523
OT-323
OT-23
O-92S
TRANSISTOR SOT-23 marking JE
transistor marking code e42
sot-23 npn marking code 162
dtc123 equivalent
transistor marking e42 code
JE SOT23
Transistor A12
011 B NPN SOT23
Diode SOT-23 marking JE
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DTA123 JM/JE/JUA/JCA/JSA PNP Small Signal Transistor Small Signal Diode Features Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistor see equivalent circuit . The bias resistors consist of thin -film resistors with
|
Original
|
DTA123
OT-723
OT-523
31TYP
O-92S
|
PDF
|
2955T
Abstract: JE3055T 3055t JE3055 je 3055t JE2955T AN415A
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP M JE 2955T* Complementary Silicon Plastic Power Transistors UPI! M JE 3055T* . . . designed for use in general-purpose amplifier and switching applications. • • *MotoroU Preferred Dtvlct DC Current Gain Specified to 10 Amperes
|
OCR Scan
|
2955T*
3055T*
MJE3055T,
MJE2955T
MJE2955T
2955T
JE3055T
3055t
JE3055
je 3055t
JE2955T
AN415A
|
PDF
|
JE243
Abstract: JE253 je 243 Transistor 834
Text: MOTOROLA Order this document by MJE243/D SEMICONDUCTOR TECHNICAL DATA Com plem entary Silicon Power Plastic Transistors M JE 243* . . . designed for low power audio amplifier and low -current, high-speed switching applications. M JE 253* • • • • •
|
OCR Scan
|
MJE243/D
MJE243,
MJE253
O-225AA
JE243
JE253
je 243
Transistor 834
|
PDF
|
13003 TRANSISTOR equivalent
Abstract: transistor sw 13003 transistor Eb 13003 A JE 13003 transistor eb 13003 j e 13003 MOTOROLA transistor MJE13002MJE13003 S JE 13003 13002 and 13003 power transistor TR 13003 transistor
Text: MOTOROLA O rder this docum ent by MJE13002/D SEMICONDUCTOR TECHNICAL DATA M JE 13002* M JE 13003* D esigner’s Data Sheet ‘ M otorola Preferred Device SWITCHMODE Series NPN Silicon Power Transistors 1.5 AMPERE NPN SILICON POWER TRANSISTORS 300 AND 400 VOLTS
|
OCR Scan
|
MJE13002/D
O-225AA
13003 TRANSISTOR equivalent
transistor sw 13003
transistor Eb 13003 A
JE 13003
transistor eb 13003
j e 13003 MOTOROLA transistor
MJE13002MJE13003
S JE 13003
13002 and 13003 power transistor
TR 13003 transistor
|
PDF
|
MJH16004
Abstract: No abstract text available
Text: MOTOROLA Order this document by MJE16002/D SEMICONDUCTOR TECHNICAL DATA M JE 16002* M JE 16004* D esigner’s Data Sheet SW ITCHM ODE S eries NPN S ilicon Pow er Transistors ‘ Motorola Preferred Device These transistors are designed for high-voltage, high-speed switching of inductive
|
OCR Scan
|
MJE16002/D
21A-06
O-220AB
MJH16004
|
PDF
|
transistor m 1104
Abstract: je210 MJE200
Text: MOTOROLA Order this document by MJE200/D SEMICONDUCTOR TECHNICAL DATA Com plem entary Silicon Power Plastic Transistors NPN M JE 200* PNP M JE 210* . . . designed for low voltage, low-power, high—gain audio amplifier applications. • • • • • C ollector-Em itter Sustaining Voltage —
|
OCR Scan
|
MJE200/D
O-225AA
transistor m 1104
je210
MJE200
|
PDF
|
JF18006
Abstract: No abstract text available
Text: O rder this data sheet by M JE18006/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA M JE 18006 M JF18006 Designer’s Data Sheet SWITCHMODE™ Motorola Preferred Devices NPN Bipolar Pow er Hransistor For S w itching Pow er Supply A pplications The M JE/M JF18006 have an applications specific state-of-the-art die designed for use
|
OCR Scan
|
JE18006/D
JF18006
O-220
O-220
MJF18006,
221D0AB
221D-01
221D-02.
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M JE 16002* M JE 16004* D esigner’s Data Sheet SWITCHMODE Series NPN Silicon Power Transistors ‘ Motorola Preferred D*vte* T h e se tra n sisto rs a re d e s ig n e d fo r h ig h -v o lta g e , h ig h -s p e e d s w itc h in g o f in d u c tiv e
|
OCR Scan
|
P-6042
|
PDF
|
MJE130
Abstract: MJE13070 MJE13071
Text: HIGH VOLTAGE/HIGH SPEED NPN POWER TRANSISTORS MJE13070 MJE13071 400-450 VOLTS 5 AMP, 80 WATTS The M JE 13070and MJE13071 are high-voltage, high-speed power switching transistors, designed for use with inductive circuits, including: switching regulators, inverters, solenoid
|
OCR Scan
|
MJE13070
MJE13071
MJE1307
MJE130
|
PDF
|
F18002
Abstract: 3704 transistor WE VQE 11 E Motorola Bipolar Power Transistor Data FR 3708 e180 MJF18002 221A-06 221D MJE18002
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet SW ITCHMODE™ M JE 18002* M JF18002* NPN Bipolar Power Transistor For Switching Power Supply Applications 'M otorola Preferred Dsvlce POWER TRANSISTOR 2.0 AMPERES 1000 VOLTS 25 and 50 WATTS
|
OCR Scan
|
MJE/MJF18002
O-220
O-220
MJF18002,
15to20
AN1040.
F18002
3704 transistor
WE VQE 11 E
Motorola Bipolar Power Transistor Data
FR 3708
e180
MJF18002
221A-06
221D
MJE18002
|
PDF
|
|
|
Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MJE18002/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M JE 18002* M JF 18002* SWITCH MODE™ NPN Bipolar Power Transistor For Switching Power Supply Applications ‘ Motorola Preferred Device POWER TRANSISTOR
|
OCR Scan
|
MJE18002/D
MJE/MJF18002
221D-02
E69369
|
PDF
|
10205 transistor
Abstract: JF18004
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M JE 18004* M JF 18004* SWITCHMODE™ NPN Bipolar Power Transistor For Switching Power Supply Applications •Motorola Prttanrtd D«vlc* POWER TRANSISTOR 5.0 AMPERES 1000 VOLTS 35 and 75 WATTS
|
OCR Scan
|
MJE/MJF18004
O-220
MJF18004,
AN1040.
10205 transistor
JF18004
|
PDF
|
motorola transistor 5331
Abstract: BFQ254 BFQ234
Text: Philips Semiconductors bb53^31 Q031741 bTb HAPX PNP 1 GHz video transistor Product specification BFQ254; BFQ254/1 N AUER PHILIPS/DISCRETE DESCRIPTION b=JE D PINNING PNP silicon epitaxial transistor in SOT172A1 and SOT172A3 envelopes, with emitter-ballasting resistors and
|
OCR Scan
|
00317m
BFQ254;
BFQ254/1
OT172A1
OT172A3
BFQ254
OT172A1)
BFQ254/I
0Q3174M
motorola transistor 5331
BFQ234
|
PDF
|
Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE b=JE D bbS3T31 OGSfllHD 7D7 I IAPX 2N3904 SILICON PLANAR EPITAXIAL TRANSISTOR NPN transistor in a plastic TO-92 envelope, primarily intended for high-speed, saturated switching applications fo r industrial service. PNP complement is 2N3906.
|
OCR Scan
|
bbS3T31
2N3904
2N3906.
|
PDF
|
2322151
Abstract: M8807 philips 2222 115 13102 BLF221B URA310 philips resistor 2322 BLF221
Text: tjbS3R31 Philips Sem iconductors OQE^Ql 101 MAPX Preliminary specification HF/VHF power MOS transistor BLF221B N AMER PHILIPS/DISCRETE FEATURES b=JE » PIN CONFIGURATION • High power gain • Easy power control • Gold metallization • Good thermal stability
|
OCR Scan
|
bbS3T31
BLF221B
MSB009-
MBA379
URA310
2322151
M8807
philips 2222 115 13102
BLF221B
URA310
philips resistor 2322
BLF221
|
PDF
|
BU208A
Abstract: GC630 IS0WATT218
Text: BU208A BU508A/BU508AFI HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS . . . STM PREFERRED SALESTYPES HIGH VOLTAGE CAPABILITY U.L. RECOGNISED ISOWATT218 PACKAGE U.L. FILE # E 8 1 734 (N . JE D E C T O -3 METAL CASE. APPLICATIONS: . HORIZONTAL DEFLECTION FOR COLOUR
|
OCR Scan
|
BU208A
BU508A/BU508AFI
ISOWATT218
BU208A,
BU508A
BU508AFI
SC06960
GC630
IS0WATT218
|
PDF
|
TRANSISTOR 13007a
Abstract: 13007a 13007a power transistor 13007* transistor S4001
Text: SGS-THOMSON S i i*i I[L[l g !QOS M JE 13007A SILICON NPN SWITCHING TRANSISTOR . SGS-THOMSON PREFERRED SALESTYPE . NPN TRANSISTOR • HIGH CURRENT CAPABILITY APPLICATIONS . SWITCHING REGULATORS . MOTOR CONTROL DESCRIPTION The MJE13007A is silicon multiepitaxial mesa
|
OCR Scan
|
3007A
MJE13007A
O-220
TRANSISTOR 13007a
13007a
13007a power transistor
13007* transistor
S4001
|
PDF
|
Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE b=JE D bbS3*1Bl QQBDbDS fiT? « A P X Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in
|
OCR Scan
|
O220AB
BUK453-100A/B
BUK453
-100A
bb53T31
Joi777
|
PDF
|
BUK453-100B
Abstract: 100-P BUK453-100A T0220AB DIODE BJE
Text: b=JE T> N AMER PHILIPS/DISCRETE • bbS3T31 DOBQbDS AT? M A P X Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is Intended for use in
|
OCR Scan
|
bbS3131
BUK453-100A/B
T0220AB
BUK453
-100B
BUK453-100B
100-P
BUK453-100A
DIODE BJE
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MOTOROLA O rder this docum ent by MJE18206/D SEMICONDUCTOR TECHNICAL DATA M JE 18206 M JF18206 D esigner’s Data Sheet SWITCHMODE™ NPN Bipolar Power Transistor for Electronic Light B allast and Sw itching Power Supply Applications POWER TRANSISTORS
|
OCR Scan
|
MJE18206/D
JF18206
MJE/MJF18206
221D-02
E69369
|
PDF
|
