Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    JC SOT23 Search Results

    JC SOT23 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TBAW56 Toshiba Electronic Devices & Storage Corporation Switching Diode, 80 V, 0.215 A, SOT23 Visit Toshiba Electronic Devices & Storage Corporation
    ISL54103IHZ-T7A Renesas Electronics Corporation DDC Accelerator (DDCA), SOT23, /Reel Visit Renesas Electronics Corporation
    EL6204CWZ-T7A Renesas Electronics Corporation Laser Driver Oscillator, SOT23, /Reel Visit Renesas Electronics Corporation
    ISL54103IHZ-T7 Renesas Electronics Corporation DDC Accelerator (DDCA), SOT23, /Reel Visit Renesas Electronics Corporation
    ISL21070CIH320Z-TK Renesas Electronics Corporation 25µA Micropower Voltage References, SOT23, /Reel Visit Renesas Electronics Corporation

    JC SOT23 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    sot23 theta jc value

    Abstract: DS18S201-Wire Theta JB 8-Pin TSSOP theta jc value an3930 DS1621 DS1624 TSSOP173 DS1822 DS1825
    Text: Maxim > App Notes > 1-Wire DEVICES GENERAL ENGINEERING TOPICS TEMPERATURE SENSORS and THERMAL MANAGEMENT MEASUREMENT CIRCUITS Keywords: Theta JA, Theta JC, theta-ja, theta-jc, self heating, thermal dissipation, heat dissipation, power dissipation, thermal resistance, junction to case, junction to ambient, temperature, sensor, temperature


    Original
    PDF DS18B20: DS18B20-PAR: DS18S20: DS18S20-PAR: DS600: DS620: DS75LV: AN3930, APP3930, Appnote3930, sot23 theta jc value DS18S201-Wire Theta JB 8-Pin TSSOP theta jc value an3930 DS1621 DS1624 TSSOP173 DS1822 DS1825

    marking JC

    Abstract: BAV23S marking sot23 marking JB sot23 jb SOT23 MARKING JC BAV23S JB SOT23 E2- marking marking JB sot23
    Text: SEMICONDUCTOR BAV23S MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking JC 1 No. 0 1 2. Marking 2 Item Marking Description Device Mark JC BAV23S - - - * Lot No. 01 2002. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method


    Original
    PDF BAV23S OT-23 marking JC BAV23S marking sot23 marking JB sot23 jb SOT23 MARKING JC BAV23S JB SOT23 E2- marking marking JB sot23

    BAL74

    Abstract: SOT23 BAL74 BAR74 sot23 jb DSA003668 50V 0.2uF 02uF
    Text: SOT23 HIGH SPEED SWITCHING DIODES BAL74 BAR74 BAL74 BAR74 ISSUE 3 – FEBRUARY 1997 PIN CONFIGURATION Circuit For Measuring Switching Time IF=10mA ! 0mA Irr VIN VOUT IR=10mA 1kΩ PARTMARKING DETAILS BAL74 – JC BAR74 – JB 0.1µF  +11V Trr2 2 1 0.2µF BAL74


    Original
    PDF BAL74 BAR74 100ns 100mA BAL74 SOT23 BAL74 BAR74 sot23 jb DSA003668 50V 0.2uF 02uF

    marking JC diode

    Abstract: No abstract text available
    Text: 1SV3401 SILICON EPITAXIAL PLANAR DIODE Band Switching Diode For VHF band switching applications 3 2 1 Marking Code: JC SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Reverse Voltage VR 35 V Forward Power Dissipation


    Original
    PDF 1SV3401 OT-23 marking JC diode

    code jc

    Abstract: marking JC diode marking JC marking code JC JC MARKING SOT-23 marking 724 diode jc marking code sot23
    Text: 1SV3401 SILICON EPITAXIAL PLANAR DIODE Band Switching Diode For VHF band switching applications 3 2 1 Marking Code: JC SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Reverse Voltage VR 35 V Forward Power Dissipation


    Original
    PDF 1SV3401 OT-23 code jc marking JC diode marking JC marking code JC JC MARKING SOT-23 marking 724 diode jc marking code sot23

    Untitled

    Abstract: No abstract text available
    Text: LM3410 www.ti.com SNVS541F – OCTOBER 2007 – REVISED AUGUST 2010 LM3410/LM3410Q 525kHz/1.6MHz, Constant Current Boost and SEPIC LED Driver with Internal Compensation Check for Samples: LM3410 FEATURES 1 • • • • • 2 • • • • Space Saving SOT23-5 & 6-LLP Package


    Original
    PDF LM3410 SNVS541F LM3410/LM3410Q 525kHz/1 OT23-5 LM3410-Y) LM3410-X) LM3410Q AEC-Q100

    e1 marking

    Abstract: FS0102DL 1CGK
    Text: FS01.L SENSITIVE GATE SCR On-State Current Gate Trigger Current 0.8 Amp < 200 µA Off-State Voltage 200 V ÷ 600 V SOT23-3L FEATURES • Glass/passivated die junctions • Low current SCR • Low thermal resistance • High surge current capability • Low forward voltage drop


    Original
    PDF 2002/95/EC 2002/96/EC J-STD-020, OT23-3L. MIL-STD-750 J-STD-002 JESD22-B102. FS01ibutors fs01lsg Dec-11 e1 marking FS0102DL 1CGK

    1CGK

    Abstract: No abstract text available
    Text: FS01.L SENSITIVE GATE SCR On-State Current Gate Trigger Current 0.8 Amp < 200 µA Off-State Voltage 200 V ÷ 600 V SOT23-3L FEATURES • Glass/passivated die junctions • Low current SCR • Low thermal resistance • High surge current capability • Low forward voltage drop


    Original
    PDF 2002/95/EC 2002/96/EC J-STD-020, OT23-3L. MIL-STD-750 J-STD-002 JESD22-B102. FS01ibutors fs01lsg Dec-11 1CGK

    1CGK

    Abstract: FS0102DL
    Text: FS01.L SENSITIVE GATE SCR On-State Current Gate Trigger Current 0.8 Amp < 200 µA Off-State Voltage 200 V ÷ 600 V SOT23-3L FEATURES • Glass/passivated die junctions • Low current SCR • Low thermal resistance • High surge current capability • Low forward voltage drop


    Original
    PDF 2002/95/EC 2002/96/EC J-STD-020, OT23-3L. MIL-STD-750 J-STD-002 JESD22-B102. FS01ibutors fs01lsg Dec-11 1CGK FS0102DL

    TS16949

    Abstract: ZXTC2063E6 ZXTC2063E6TA SOT23-6 MARKING 57 NPN SOT23-6
    Text: ZXTC2063E6 40V, SOT23-6, complementary medium power transistors Summary BVCEO > 40 -40 V BVECO > 6 (-3)V IC(cont) = 3.5 (-3)A VCE(sat) < 60 (-90)mV @ 1A RCE(sat) = 38 (58)m⍀ PD = 1.1W Description C1 Advanced process capability has been used to achieve this high performance device. Combining NPN and PNP


    Original
    PDF ZXTC2063E6 OT23-6, OT23-6 ZXTC2063E6TA D-81541 TS16949 ZXTC2063E6 ZXTC2063E6TA SOT23-6 MARKING 57 NPN SOT23-6

    DIODES 11W

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated ZXTC2063E6 40V, SOT23-6, complementary medium power transistors Summary BVCEO > 40 -40 V BVECO > 6 (-3)V IC(cont) = 3.5 (-3)A VCE(sat) < 60 (-90)mV @ 1A RCE(sat) = 38 (58)m⍀ PD = 1.1W Description C1 Advanced process capability has been used to achieve


    Original
    PDF ZXTC2063E6 OT23-6, OT23-6 ZXTC20: D-81541 DIODES 11W

    Untitled

    Abstract: No abstract text available
    Text: MMBR911LT1 RF & MICROWAVE TRANSISTORS DESCRIPTION KEY FEATURES ! High FTau-6.0 GHz EL PR The MMBR911LT1 is a low noise, high gain, discrete silicon bipolar transistors housed in low cost plastic packages. ! Low noise-2.9dB@1GHz ! Low cost SOT23 package IMPORTANT: For the most current data, visit: http://www.advancedpower.com


    Original
    PDF MMBR911LT1 MMBR911LT1 OT-23 MMBR911MLT1

    Untitled

    Abstract: No abstract text available
    Text: BFR92ALT1 RF & MICROWAVE TRANSISTORS RF PRODUCTS DIVISION DESCRIPTION KEY FEATURES E PR The BFR92ALT1 is a low noise, high gain, discrete silicon bipolar transistors housed in low cost plastic packages.  Low noise-3.0dB@500MHz  Low cost SOT23 package IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com


    Original
    PDF BFR92ALT1 BFR92ALT1 500MHz

    Untitled

    Abstract: No abstract text available
    Text: MMBR5179LT1 RF & MICROWAVE TRANSISTORS DESCRIPTION KEY FEATURES ! High FTau-1.4GHz EL PR The MMBR5179LT1 is a low noise, high gain, discrete silicon bipolar transistors housed in low cost plastic packages. ! Low noise-4.5dB@200MHz ! Low cost SOT23 package


    Original
    PDF MMBR5179LT1 MMBR5179LT1 200MHz OT-23

    Untitled

    Abstract: No abstract text available
    Text: MMBR911LT1 RF PRODUCTS RF & MICROWAVE TRANSISTORS DIVISION DESCRIPTION KEY FEATURES EL PR The MMBR911LT1 is a low noise, high gain, discrete silicon bipolar transistors housed in low cost plastic packages. ! Low noise-2.9dB@1GHz ! Low cost SOT23 package IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com


    Original
    PDF MMBR911LT1 MMBR911LT1 MMBR911MLT1

    Untitled

    Abstract: No abstract text available
    Text: BFR92ALT1 RF PRODUCTS RF & MICROWAVE TRANSISTORS DIVISION DESCRIPTION KEY FEATURES EL PR The BFR92ALT1 is a low noise, high gain, discrete silicon bipolar transistors housed in low cost plastic packages. ! Low noise-3.0dB@500MHz ! Low cost SOT23 package IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com


    Original
    PDF BFR92ALT1 BFR92ALT1 500MHz

    Untitled

    Abstract: No abstract text available
    Text: MMBR5179LT1 RF & MICROWAVE TRANSISTORS RF PRODUCTS DIVISION DESCRIPTION KEY FEATURES E PR The MMBR5179LT1 is a low noise, high gain, discrete silicon bipolar transistors housed in low cost plastic packages.  Low noise-4.5dB@200MHz  Low cost SOT23 package


    Original
    PDF MMBR5179LT1 MMBR5179LT1 200MHz

    1D SOT 23-6

    Abstract: MMBTA06 MMBTA42 MMBTA43 NZT6714 NZT6715 NZT6717 PZTA06 PZTA42
    Text: This Surface Mount Transistors Material tr Copyrighted □ □ Ln a t-* t-1 Ui Discrete POWER & Signal Technologies Na t i o n a I f i Semiconductor" Surface Mount Transistors a NPN Medium Power JC a JC -0 _D By ai a -i Device No. SOT-23 Mark Case Style


    OCR Scan
    PDF OT-23 MMBTA06 O-236 PZTA06 O-261 NZT6714 NZT6715 NZT6717 1D SOT 23-6 MMBTA06 MMBTA42 MMBTA43 PZTA42

    Untitled

    Abstract: No abstract text available
    Text: VP2106 VP2110 Superte jc¡ne. P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVdss/ BV Order Number / Package ^DS ON ' d (ON) (max) (min) TO-92 TO-236AB* Diet 12fi -0.5A VP2106N3 VP2106ND P1 A * VP2110ND where * = 2-week alpha date code


    OCR Scan
    PDF VP2106 VP2110 VP2106N3 O-236AB* VP2110K1 VP2106ND VP2110ND OT-23: -100V VP2106/VP2110

    Untitled

    Abstract: No abstract text available
    Text: M AXIMUM RATINGS Symbol Value C o lle ctor-E m itter Voltage Rating v CEO 40 Vdc Collector-Base Voltage v CBO 60 Vdc Em itter-Base Voltage v EBO 6.0 Vdc 'c 600 m Adc Symbol Max Unit Pd 225 mW 1.8 m W:'JC Collector C urrent — C ontinuous Unit MMBT4401LT1*


    OCR Scan
    PDF MMBT4401LT1* OT-23 O-236AB)

    PAL 007 B

    Abstract: PAL 007 c PAL 007 E PAL 007 a TDA8505 ENCODER PAL TO NTSC PAL 007 philips fag circuit IEC134 TDA8501
    Text: P h ilip s Sem iconductors Video Products O b je c t lv ^ p e c if jc a t jo n TDA8501 PAL/NTSC encoder FEA TU RES G EN ERAL DESCRIPTION • Two input stages: R , G , B and - R -Y , -(B -Y ), Y with multiplexing • Chrominance processing, highly integrated, includes


    OCR Scan
    PDF TDA8501 MKA455 MKA456 MKA457 7110A2b 0D77DM7 711002b 0D77D4B PAL 007 B PAL 007 c PAL 007 E PAL 007 a TDA8505 ENCODER PAL TO NTSC PAL 007 philips fag circuit IEC134 TDA8501

    Untitled

    Abstract: No abstract text available
    Text: M C C SOT-23 P la s tic-E n cap su fa te T ra n s is to rs ^ 1.BASE 2 .EMITTER 3.COLLECTOR 8 9 0 1 5LT1 TR A N SIS TO R PNP FEATURES ftovterdtesipation PCM: 0.2 W (Tam b= 25'C) Collector current ICM: -0.1 A Collector-base voltage V( b r jc b o :-50V Operating and storage junction temperature range


    OCR Scan
    PDF OT-23 -100m -10mA 30MHz S9015LT1 S9015LT1

    CV 1

    Abstract: No abstract text available
    Text: M C C SOT-23 P lastic-E n cap su late T ra n s is to rs ^ ^ ^ M M B T 5401LT 1 TR A N SISTO R PNP 1 .BASE 2.EMITTER 3.COLLECTOR FEATURES Power dissipation Pcm: 0.3 W (Tamb=25"C) C ollecto r current ICM: -0 .6 A 2.4 Collector-base voltage « 13 ► V ( b r jc b o :-1 6 0 V


    OCR Scan
    PDF OT-23 5401LT -100w -500m -50mA 100MHz MMBT5401LT1 MMBT5401LT1 CV 1

    E4 sot23-5

    Abstract: sot23-5 package marking E4 marking B3 sot23-5 VM SOT23-5 MARKING TS462CN-TS462CD-TS462CPT TS461-TS461-TS464
    Text: TS461 TS462 TS464 OUTPUT RAIL TO RAIL OPERATIONAL AMPLIFIERS • HIGH DYNAMIC FEATURES ■ LARGE OUTPUT SWING ±2.4V @ VCC = ±2.5V ■ LOW NOISE LEVEL : 4nV/VHz" ■ LOW DISTORTION : 0.003% ■ OPERATING RANGE : 2.7V to 12V ■ AVAILABLE IN SOT23-5 MICROPACKAGE


    OCR Scan
    PDF TS461 TS462 TS464 OT23-5 TS46x TS461/2/4are E4 sot23-5 sot23-5 package marking E4 marking B3 sot23-5 VM SOT23-5 MARKING TS462CN-TS462CD-TS462CPT TS461-TS461-TS464