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    J585 MOSFET Search Results

    J585 MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    J585 MOSFET Datasheets Context Search

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    J585

    Abstract: J585 mosfet 2SJ585LS 2SJ585 64122
    Text: Ordering number:ENN6412 P-Channel Silicon MOSFET 2SJ585LS Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON-resistance. · Ultrahigh-speed switching. · Micaless package facilitating mounting. unit:mm 2078B [2SJ585LS] 4.5 10.0 2.8


    Original     		PDF ENN6412 2SJ585LS 2078B 2SJ585LS] O-220FI-LS J585 J585 mosfet 2SJ585LS 2SJ585 64122

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    Abstract: No abstract text available
    Text: Ordering number:ENN6412 P-Channel Silicon MOSFET 2SJ585LS Ultrahigh-Speed Switching Applications Package Dimensions Features • Low ON-resistance. • Ultrahigh-speed switching. • M icaless package facilitating mounting. unit:mm 2078B Specifications Absolute Maximum Ratings at Ta = 25 C


    OCR Scan     		PDF ENN6412 2SJ585LS 2078B