transistor j210
Abstract: J210 J211 J212 marking J212
Text: DISCRETE SEMICONDUCTORS DATA SHEET J210; J211; J212 N-channel field-effect transistors Product specification File under Discrete Semiconductors, SC07 1997 Dec 01 Philips Semiconductors Product specification N-channel field-effect transistors J210; J211; J212
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SCA56
117067/00/01/pp12
transistor j210
J210
J211
J212
marking J212
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SSTJ210
Abstract: J210
Text: N-Channel JFET LLC J210 – J212 / SSTJ210 – SSTJ212 DESCRIPTION FEATURES • Low Noise • Low Leakage • High Power Gain The J210 Series is an N-Channel JFET single device encapsulated in a TO-92 plastic package well suited for automated assembly. The device features low leakage,
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SSTJ210
SSTJ212
J210-11
SSTJ210-11
OT-23
-55oC
135oC
PI10V,
SSTJ210
J210
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2N5911
Abstract: SSTJ212 transistor j210 J210 J211 J212 SSTJ211
Text: J/SSTJ210 Series Vishay Siliconix N-Channel JFETs J210 SSTJ211 J211 SSTJ212 J212 PRODUCT SUMMARY Part Number VGS off (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA) J210 –1 to –3 –25 4 2 J/SSTJ211 –2.5 to –4.5 –25 6 7 J/SSTJ212 –4 to –6 –25
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J/SSTJ210
SSTJ211
SSTJ212
J/SSTJ211
J/SSTJ212
J211/212,
18-Jul-08
2N5911
SSTJ212
transistor j210
J210
J211
J212
SSTJ211
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"Z2" marking
Abstract: No abstract text available
Text: J/SSTJ210 Series Vishay Siliconix N-Channel JFETs J210 SSTJ211 J211 SSTJ212 J212 PRODUCT SUMMARY Part Number VGS off (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA) J210 –1 to –3 –25 4 2 J/SSTJ211 –2.5 to –4.5 –25 6 7 J/SSTJ212 –4 to –6 –25
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J/SSTJ210
J/SSTJ211
J/SSTJ212
SSTJ211
SSTJ212
J211/212,
08-Apr-05
"Z2" marking
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PDF
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J210
Abstract: SSTJ210 transistor j210 marking sot-23 212 s sot-23 J212 SSTJ211 SSTJ212 J210 equivalent
Text: N-Channel JFET CORPORATION J210 – J212 / SSTJ210 – SSTJ212 DESCRIPTION FEATURES • Low Noise • Low Leakage • High Power Gain The J210 Series is an N-Channel JFET single device encapsulated in a TO-92 plastic package well suited for automated assembly. The device features low leakage,
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Original
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SSTJ210
SSTJ212
J210-11
SSTJ210-11
OT-23
-55oC
135oC
J210
SSTJ210
transistor j210
marking sot-23
212 s sot-23
J212
SSTJ211
SSTJ212
J210 equivalent
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PDF
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transistor j210
Abstract: J210 Siliconix JFETs Dual Siliconix N-Channel JFETs AN104 J211 J212
Text: J210/211/212 N-Channel JFETs Product Summary Part Number VGS off (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA) J210 –1 to –3 –25 4 2 J211 –2.5 to –4.5 –25 6 7 J212 –4 to –6 –25 7 15 J211, For applications information see AN104, page 1.
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J210/211/212
AN104,
J211/212,
P-37404--Rev.
04-Jul-94
transistor j210
J210
Siliconix JFETs Dual
Siliconix N-Channel JFETs
AN104
J211
J212
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PDF
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SSTJ211
Abstract: J210 transistor j210 J211 J212 SSTJ212 SOT-23 2.D SSTJ210 marking Z2 sot23
Text: J/SSTJ210 Series Vishay Siliconix N-Channel JFETs J210 SSTJ211 J211 SSTJ212 J212 PRODUCT SUMMARY Part Number VGS off (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA) J210 –1 to –3 –25 4 2 J/SSTJ211 –2.5 to –4.5 –25 6 7 J/SSTJ212 –4 to –6 –25
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J/SSTJ210
SSTJ211
SSTJ212
J/SSTJ211
J/SSTJ212
J211/212,
S-04028--Rev.
04-Jun-01
SSTJ211
J210
transistor j210
J211
J212
SSTJ212
SOT-23 2.D
SSTJ210
marking Z2 sot23
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transistor j210
Abstract: J210 J211 J212 SSTJ211 SSTJ212
Text: J/SSTJ210 Series N-Channel JFETs J210 J211 J212 SSTJ211 SSTJ212 Product Summary Part Number VGS off (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA) J210 –1 to –3 –25 4 2 J/SSTJ211 –2.5 to –4.5 –25 6 7 J/SSTJ212 –4 to –6 –25 7 15 Features
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J/SSTJ210
SSTJ211
SSTJ212
J/SSTJ211
J/SSTJ212
J211/212,
S-52428--Rev.
14-Apr-97
transistor j210
J210
J211
J212
SSTJ211
SSTJ212
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Siliconix JFETs Dual
Abstract: transistor j210 J210 J211 J212 SSTJ211 SSTJ212
Text: J/SSTJ210 Series N-Channel JFETs J210 J211 J212 SSTJ211 SSTJ212 Product Summary Part Number VGS off (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA) J210 –1 to –3 –25 4 2 J/SSTJ211 –2.5 to –4.5 –25 6 7 J/SSTJ212 –4 to –6 –25 7 15 Features
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J/SSTJ210
SSTJ211
SSTJ212
J/SSTJ211
J/SSTJ212
J211/212,
S-52428--Rev.
14-Apr-97
Siliconix JFETs Dual
transistor j210
J210
J211
J212
SSTJ211
SSTJ212
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Siliconix AN104
Abstract: AN104 J210 J211 J212
Text: J210/211/212 Siliconix NĆChannel JFETs Product Summary Part Number VGS off (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA) J210 -1 to -3 -25 4 2 J211 -2.5 to -4.5 -25 6 7 J212 -4 to -6 -25 7 15 J211, For applications information see AN104, page 21. Features
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J210/211/212
AN104,
J211/212,
P-37404--Rev.
Siliconix AN104
AN104
J210
J211
J212
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J210 equivalent
Abstract: No abstract text available
Text: J210 N-CHANNEL JFET Linear Systems replaces discontinued Siliconix J210 FEATURES DIRECT REPLACEMENT FOR SILICONIX J210 HIGH GAIN gfs = 7000µmho MIN HIGH INPUT IMPEDANCE IGSS = 100pA max LOW INPUT CAPACITANCE Ciss = 5pF ABSOLUTE MAXIMUM RATINGS @ 25°C unless otherwise noted
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100pA
360mW
J210 equivalent
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J210 Replacement
Abstract: J210 J210 equivalent
Text: J210 N-CHANNEL JFET Linear Systems replaces discontinued Siliconix J210 FEATURES DIRECT REPLACEMENT FOR SILICONIX J210 HIGH GAIN gfs = 7000µmho MIN HIGH INPUT IMPEDANCE IGSS = 100pA max LOW INPUT CAPACITANCE Ciss = 5pF ABSOLUTE MAXIMUM RATINGS @ 25°C unless otherwise noted
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OT-23
100pA
360mW
J210 Replacement
J210
J210 equivalent
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low igss
Abstract: J212 J211 J210 transistor j210 J210 equivalent
Text: J210, J211, J212 LOW NOISE N-CHANNEL J-FET GENERAL PURPOSE AMPLIFIER Linear Integrated Systems TO-92 Plastic FEATURES HIGH GAIN gfs = 7000µmho MINIMUM J211, J212 TO-92 D HIGH INPUT IMPEDANCE IGSS= 100pA MAXIMUM G LOW INPUT CAPACITANCE Ciss= 5pF TYPICAL
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100pA
360mW
low igss
J212
J211
J210
transistor j210
J210 equivalent
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Untitled
Abstract: No abstract text available
Text: J210, J211, J212 SSTJ210, SSTJ211, SSTJ212 LOW NOISE N-CHANNEL JFET GENERAL PURPOSE AMPLIFIER TO-92 TO-92 FEATURES HIGH GAIN gfs=7000µmho MINIMUM J211, J212 HIGH INPUT IMPEDENCE LOW CAPACITANCE Plastic D IGSS= 100pA MAXIMUM G CISS= 5pF TYPICAL S ABSOLUTE MAXIMUM RATINGS
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SSTJ210,
SSTJ211,
SSTJ212
100pA
OT-23
360mW
SSTJ210
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PDF
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Untitled
Abstract: No abstract text available
Text: J210, J211, J212 / SSTJ210, SSTJ211, SSTJ212 LOW NOISE N-CHANNEL JFET GENERAL PURPOSE AMPLIFIER FEATURES HIGH GAIN gfs=7000µmho MINIMUM J211, J212 HIGH INPUT IMPEDENCE LOW CAPACITANCE TO-92 IGSS= 100pA MAXIMUM CISS= 5pF TYPICAL Plastic D ABSOLUTE MAXIMUM RATINGS
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SSTJ210,
SSTJ211,
SSTJ212
100pA
360mW
OT-23
SSTJ210
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PDF
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ultra low igss pA mosfet
Abstract: ultra low igss pA j174 Transistor AND DIODE Equivalent list Ultra High Input Impedance N-Channel JFET Amplifier sd210 3n164 equivalent SST113 ULTRA LOW NOISE N-CHANNEL JFET 2N3958 equivalent
Text: J210, J211, J212 LOW NOISE N-CHANNEL J-FET GENERAL PURPOSE AMPLIFIER Linear Integrated Systems TO-92 Plastic FEATURES HIGH GAIN gfs = 7000µmho MINIMUM J211, J212 TO-92 D HIGH INPUT IMPEDANCE IGSS= 100pA MAXIMUM G LOW INPUT CAPACITANCE Ciss= 5pF TYPICAL
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100pA
360mW
ultra low igss pA mosfet
ultra low igss pA
j174
Transistor AND DIODE Equivalent list
Ultra High Input Impedance N-Channel JFET Amplifier
sd210
3n164 equivalent
SST113
ULTRA LOW NOISE N-CHANNEL JFET
2N3958 equivalent
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PDF
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SS211
Abstract: ss 211
Text: N-Channel JFET caioqic CORPORATION J210 -J212/SST210 - SST212 FEATURES DESCRIPTION • Low Noise • Low Leakage • High Power Gain The J210 Series is an N-Channel JFE T single device encapsulated in a TO-92 plastic package well suited for automated assembly.
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OCR Scan
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-J212/SST210
SST212
J210-11
SST210-11
OT-23
J210-J212/SST21
300ms,
SS211
ss 211
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SST210-11
Abstract: FL-41 J210 SST212 SST210
Text: calocfic N-Channel JFET CORPORATION J210 - J212/SST210 - SST212 FEATURES DESCRIPTION • Low Noise • Low Leakage • High Power Gain The J210 Series is an N-Channel JFE T single device encapsulated in a TO-92 plastic package well suited for automated assembly.
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OCR Scan
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J212/SST210
SST212
J210-11
SST210-11
OT-23
300ms,
443E2
FL-41
J210
SST212
SST210
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PDF
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Untitled
Abstract: No abstract text available
Text: d o tfi1' caloqic CORPORATION N-ChannelJFET v J210 - J212/SST210 - SST212 FEATURES DESCRIPTION • Low Noise • Low Leakage • High Power Gain The J210 Series is an N-Channel JFE T single device encapsulated in a TO-92 plastic package well suited for automated assembly.
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OCR Scan
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J212/SST210
SST212
J210-11
SST210-11
OT-23
1B443SB
300ms,
1A44322
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PDF
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J210 equivalent
Abstract: No abstract text available
Text: J210 SERIES N-Channel JFETs flTSEconix in co rp o rated The J210 Series of n-channel JFETs provides good general purpose amplifiers for a wide range of test and Instrumentation applications. This series features low-leakage Iq s s < 100 pA , high gain (g*, > 7 mSfor
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OCR Scan
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O-226AA)
2N5911
J210 equivalent
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PDF
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Siliconix Dual N-Channel JFETs
Abstract: J210 211 siliconix
Text: Tem ic J210/211/212 Siliconix N-Channel JFETs Product Summary P a rt N um ber Vg s oK (V) V(BR)GSS ^ ' ,l ^ ; gfcM in (m S) 'I I dss Mi (mA) J210 - 1 to - 3 -25 4 2 J211 -2.5 to -4.5 -2 5 6 7 J212 —4 to - 6 -2 5 7 15 J211, For applications information seeAN104, page 12-21.
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OCR Scan
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J210/211/212
seeAN104,
J211/212,
P-37404--
P-37404--Rev.
Siliconix Dual N-Channel JFETs
J210
211 siliconix
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PDF
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Untitled
Abstract: No abstract text available
Text: J210. J211. J212 LINEAR SYSTEMS LOW NOISE N-CHANNEL J-FET GENERAL PURPOSE AMPLIFIER Linear Integrated Systems FEATURES HIGH GAIN gfs = 7000 Urn ho MINIMUM J211, J212 HIGH INPUT IMPEDANCE lGSS= 100pA MAXIMUM LOW INPUT CAPACITANCE C. ISS = 5pF TYPICAL r ABSOLUTE MAXIMUM RATINGS
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OCR Scan
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100pA
360mW
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PDF
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Untitled
Abstract: No abstract text available
Text: B 56 9-97 J210, J211 N-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTOR • AUDIO AMPLIFIERS • GENERAL PURPOSE AMPLIFIERS Absolute maximum ratings at TA = 25°C Reverse Gate Source & Reverse Gate Drain Voltage - 25 V Continuous Forward Gate Current 10 mA
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OCR Scan
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NJ26L
T0-226AA
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PDF
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Untitled
Abstract: No abstract text available
Text: J210. J211. J212 LINEAR SYSTEMS LOW NOISE N-CHANNEL J-FET G EN ERAL PURPO SE AMPLIFIER Linear Integrated Systems FEATURES HIGH GAIN = 7000^mho MINIMUM J211, J212 HIGH INPUT IMPEDANCE lQSS= 100pA MAXIMUM LOW INPUT CAPACITANCE C|88= 5pF TYPICAL ABSOLUTE MAXIMUM RATINGS
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OCR Scan
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100pA
360mW
LISIS00075
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PDF
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