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    J11 TRANSISTOR Search Results

    J11 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    J11 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    VO6C

    Abstract: NEL2004 NEL2035 NEL2001 NEL2004F02-24 NEL2012 VO-6C
    Text: DATA SHEET SILICON POWER TRANSISTOR NEL2004F02-24 NPN SILICON EPITAXIAL TRANSISTOR L Band Power Amplifier is designed for 1.8-2 GHz PHS/PCN/PCS base station applications. It incorporates emitter ballast resistors, gold metallizations and 2 2 ±0.2 3 ±0.2 2 ±0.2


    Original     		PDF NEL2004F02-24 NEL2004F02-24 VO6C NEL2004 NEL2035 NEL2001 NEL2012 VO-6C

    J148

    Abstract: SD1127
    Text: SD1127 SILICON NPN RF POWER TRANSISTOR DESCRIPTION: The ASI SD1127 is designed for VHF mobil communications applications up to 175 MHz. FEATURES: PACKAGE STYLE TO-39 • Grounded Emiter The ASI SD1127 • Gp 12 dB @ 12.5V 175 MHz • Pout 4.0 V Min. MAXIMUM RATINGS


    Original     		PDF SD1127 SD1127 J148

    SD1127

    Abstract: No abstract text available
    Text: SD1127 SILICON NPN RF POWER TRANSISTOR DESCRIPTION: The ASI SD1127 is designed for VHF mobil communications applications up to 175 MHz. FEATURES: PACKAGE STYLE TO-39 • Grounded Emiter The ASI SD1127  Gp 12 dB @ 12.5V 175 MHz  Pout 4.0 W Min. MAXIMUM RATINGS


    Original     		PDF SD1127 SD1127

    J148

    Abstract: No abstract text available
    Text: SD1127 SILICON NPN RF POWER TRANSISTOR DESCRIPTION: The ASI SD1127 is designed for VHF mobil communications applications up to 175 MHz. FEATURES: PACKAGE STYLE TO-39 • Grounded Emiter The ASI SD1127 • Gp 12 dB @ 12.5V 175 MHz • Pout 4.0 V Min. MAXIMUM RATINGS


    Original     		PDF SD1127 SD1127 J148

    J148

    Abstract: SD1127
    Text: SD1127 RF & MICROWAVE TRANSISTORS VHF FM MOBILE APPLICATIONS Features • • • • • 175 MHz 12.5 VOLTS POUT = 4.0 W MINIMUM GP = 12.0 dB GROUNDED EMITTER 1. Emitter 2. Base 3. Collector TO-39 DESCRIPTION: The SD1127 is a epitaxial silicon NPN transistor designed


    Original     		PDF SD1127 SD1127 J148

    SD1127

    Abstract: No abstract text available
    Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 SD1127 RF & MICROWAVE TRANSISTORS VHF FM MOBILE APPLICATIONS Features • • • • • 175 MHz 12.5 VOLTS POUT = 4.0 W MINIMUM GP = 12.0 dB GROUNDED EMITTER 1. Emitter


    Original     		PDF SD1127 SD1127

    transistor J9

    Abstract: 12w transistor MS2218 transistor 60 12w 12w 66 transistor transistor 12W 14
    Text: MS2218 RF & MICROWAVE TRANSISTORS L-BAND RADAR APPLICATIONS Features • • • • • • • 1.2 – 1.4 GHz 28 VOLTS INFINITE VSWR CAPABILITY @ RATED CONDITIONS POUT = 55 WATTS GP = 6.6 dB MINIMUM INPUT/OUTPUT MATCHING COMMON BASE CONFIGURATION DESCRIPTION:


    Original     		PDF MS2218 MS2218 transistor J9 12w transistor transistor 60 12w 12w 66 transistor transistor 12W 14

    transistor J9

    Abstract: 12w 66 transistor transistor 60 12w 12w 99
    Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MS2218 RF & MICROWAVE TRANSISTORS L-BAND RADAR APPLICATIONS Features • • • • • • • 1.2 – 1.4 GHz 28 VOLTS INFINITE VSWR CAPABILITY @ RATED CONDITIONS


    Original     		PDF MS2218 MS2218 transistor J9 12w 66 transistor transistor 60 12w 12w 99

    NTE341

    Abstract: No abstract text available
    Text: NTE341 Silicon NPN Transistor RF Power Output Description: The NTE341 is a epitaxial silicon NPN transistor designed primarily for VHF mobile communications. The chip of this transistor is mounted so as to isolate the collector lead and ground the emitter lead


    Original     		PDF NTE341 NTE341 175MHz 155MHz 136MHz

    74LS132N

    Abstract: diode c05*10 Robinson Nugent ICA-243-S-TG TDC3310 1n4148 D035 HPS-03-G C052C104K5X5CA Robinson Nugent ICA-243 NSH-12DB-S2-TR
    Text: Electronics Semiconductor Division TMC1175AE1C The Evaluation Board for the TMC1175AE1C Description The TMC1175AE1C Evaluation Board brings all of the circuitry together for evaluating Raytheon Electronics’ TMC1175A CMOS A/D converter and the TDC3310 10-bit


    Original     		PDF TMC1175AE1C TMC1175AE1C TMC1175A TDC3310 10-bit DS71175AE1 74LS132N diode c05*10 Robinson Nugent ICA-243-S-TG 1n4148 D035 HPS-03-G C052C104K5X5CA Robinson Nugent ICA-243 NSH-12DB-S2-TR

    74ls132n

    Abstract: diode c05*10 1N4148 sma RPE122Z5U104M50V HPS-03-G ICA-286-S-TG NSH-02SB-S2-TR sealectro coax connector ICA286-STG marking U7 SMA
    Text: www.fairchildsemi.com TMC1175AE1C The Evaluation Board for the TMC1175AE1C Description The TMC1175AE1C Evaluation Board brings all of the circuitry together for evaluating Fairchild Semiconductors’ TMC1175A CMOS A/D converter and the TDC3310 10-bit D/A converter. The A/D and D/A signal paths are independent but easily configurable at the edge connector for


    Original     		PDF TMC1175AE1C TMC1175AE1C TMC1175A TDC3310 10-bit DS71175AE1 74ls132n diode c05*10 1N4148 sma RPE122Z5U104M50V HPS-03-G ICA-286-S-TG NSH-02SB-S2-TR sealectro coax connector ICA286-STG marking U7 SMA

    Untitled

    Abstract: No abstract text available
    Text: SD1127 RF & MICROWAVE TRANSISTORS VHF FM MOBILE APPLICATIONS Features • • • • • 175 MHz 12.5 VOLTS POUT = 4.0 W MINIMUM GP = 12.0 dB GROUNDED EMITTER 1. Collector 2. Base 3. Emitter TO-39 DESCRIPTION: The SD1127 is a epitaxial silicon NPN transistor designed


    Original     		PDF SD1127 SD1127

    Untitled

    Abstract: No abstract text available
    Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MS2218 RF & MICROWAVE TRANSISTORS L-BAND RADAR APPLICATIONS Features • • • • • • • 1.2 – 1.4 GHz 28 VOLTS INFINITE VSWR CAPABILITY @ RATED CONDITIONS


    Original     		PDF MS2218 MS2218

    Untitled

    Abstract: No abstract text available
    Text: SD1127 RF & MICROWAVE TRANSISTORS VHF FM MOBILE APPLICATIONS Features • • • • • 175 MHz 12.5 VOLTS POUT = 4.0 W MINIMUM GP = 12.0 dB GROUNDED EMITTER 1. Emitter 2. Base 3. Collector TO-39 DESCRIPTION: The SD1127 is a epitaxial silicon NPN transistor designed


    Original     		PDF SD1127 SD1127

    SD1127

    Abstract: J11 transistor
    Text: SD1127 RF & MICROWAVE TRANSISTORS VHF FM MOBILE APPLICATIONS Features • • • • • 175 MHz 12.5 VOLTS POUT = 4.0 W MINIMUM GP = 12.0 dB GROUNDED EMITTER 1. Collector 2. Base 3. Emitter TO-39 DESCRIPTION: The SD1127 is a epitaxial silicon NPN transistor designed


    Original     		PDF SD1127 SD1127 J11 transistor

    smd ss 7 transistor

    Abstract: SMD TRANSISTOR j11
    Text: Application Note 1946 ISL78268EVAL1Z Evaluation Board User Guide Introduction Key Features ISL78268 is an automotive grade synchronous buck controller with the 2-A sourcing/3-A sinking Integrated MOSFET Drivers. The device supports the wide input supply voltage range of 5V


    Original     		PDF ISL78268EVAL1Z ISL78268 ISL78268, ISL78268. 100ms/DIV 20ms/DIV AN1946 smd ss 7 transistor SMD TRANSISTOR j11

    Untitled

    Abstract: No abstract text available
    Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MS2218 RF & MICROWAVE TRANSISTORS L-BAND RADAR APPLICATIONS Features • • • • • • • 1.2 – 1.4 GHz 28 VOLTS INFINITE VSWR CAPABILITY @ RATED CONDITIONS


    Original     		PDF MS2218 MS2218

    sd1127

    Abstract: No abstract text available
    Text: <3\ U na. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 SD1127 RF & MICROWAVE TRANSISTORS VHP FM MOBILE APPLICATIONS Features • • • • • I 175MHz 12.5 VOLTS POUT = 4.0 W MINIMUM G P =12.0dB


    Original     		PDF SD1127 175MHz SD1127 136MHz 155MHz 11-J14 13-J20

    um10155

    Abstract: philips class d audio amp UM10155 PHILIPS SEMICONDUCTOR audio sonic amplifier circuit diagram 1PS76SB10 UCD CLASS D PWM AUDIO AMPLIFIER class D mosfet amplifier diagram manual service amplifier UM1015
    Text: UM10155 Discrete Class D High Power Audio Amplifier Rev. 02 — 5 September 2006 User manual Document information Info Content Keywords Class D Audio Amplifier, Universal Class D, UcD, PWM Audio Amplifier, High Power Audio. Abstract This user manual describes the operating instructions and the most


    Original     		PDF UM10155 UM10155 philips class d audio amp UM10155 PHILIPS SEMICONDUCTOR audio sonic amplifier circuit diagram 1PS76SB10 UCD CLASS D PWM AUDIO AMPLIFIER class D mosfet amplifier diagram manual service amplifier UM1015

    2SC4723

    Abstract: 2SC4642K
    Text: 2SC4642K/2SC4723 h "7 > v Z. £ / T ransistors 2S C 4642K Epitaxial 1e* * iyPlanar 7^ uNPN ~ Silicon NPN% > ,J11>h^> * * Transistor Z5C 47Z3 —Ax/ivÎ t ^ - i i l1if f l / / General Small Signal Amp. * ^Hfé^ìÉISI/Dimensions Unit : mm 2SC4723 2 .9 ± 0 .2


    OCR Scan     		PDF 2SC4642K/2SC4723 2SC4642K 2SC4723 2SC4642K SC-59 2SC4723

    transistor eb 102

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification NPN microwave power transistor LWE2015R FEATURES PINNING - SOT446A • Interdigitated structure provides high emitter efficiency PIN • Diffused emitter ballasting resistor provides excellent current sharing and withstanding a high VSWR


    OCR Scan     		PDF LWE2015R OT446A transistor eb 102

    LWE2015R

    Abstract: No abstract text available
    Text: Az_ N AMER P H I L I P S / D I S C R E T E OLE D • bbSBTBl □QlSQl'i 6 ■ LWÊ2015R ^ r - ^ - o s r MICROWAVE LINEAR POWER TRANSISTOR N-P-N silicon power transistor for use in a common-emitter, class-A amplifier up to 2,3 GHz in c.w.


    OCR Scan     		PDF 01SQ1CI 2015R G01S053 LWE2015R 250mA LWE2015R

    SOT446A

    Abstract: LWE2015R
    Text: Philips Semiconductors Product specification NPN microwave power transistor LWE2015R PINNING - SOT446A FEATURES • In te rd ig ita te d s tru c tu re p ro v id e s high e m itte r e ffic ie n c y PIN • D iffu se d e m itte r b a lla s tin g re s is to r p ro v id e s e x c e lle n t


    OCR Scan     		PDF LWE2015R OT446A OT446A. SOT446A LWE2015R

    Untitled

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE OLE D • bbS3T31 OD14T4el 4 MAINTENANCE TYPE LKE27025R • T -S 3 -6 7 MICROWAVE LINEAR POWER TRANSISTOR NPN silicon transistor intended for use in military and professional applications. It operates in c.w. conditions and is recommended in common-emitter class-A amplifiers up to 2,7 GHz.


    OCR Scan     		PDF bbS3T31 OD14T4e LKE27025R FO-53.