Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    IXYB82N120C3H1 Search Results

    SF Impression Pixel

    IXYB82N120C3H1 Price and Stock

    IXYS Corporation IXYB82N120C3H1

    IGBT 1200V 164A 1040W PLUS264
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXYB82N120C3H1 Tube 300 300
    • 1 -
    • 10 -
    • 100 -
    • 1000 $18.15663
    • 10000 $18.15663
    		Buy Now
    Mouser Electronics IXYB82N120C3H1
    • 1 $28.31
    • 10 $25.16
    • 100 $18.15
    • 1000 $18.15
    • 10000 $18.15
    		Get Quote
    Newark IXYB82N120C3H1 Bulk 11 1
    • 1 $29.43
    • 10 $26.16
    • 100 $22.88
    • 1000 $21.35
    • 10000 $21.35
    		Buy Now
    Future Electronics IXYB82N120C3H1 Tube 300
    • 1 -
    • 10 -
    • 100 $17.79
    • 1000 $17.79
    • 10000 $17.79
    		Buy Now
    IXYB82N120C3H1 Tube 25
    • 1 -
    • 10 -
    • 100 $18.2
    • 1000 $18.2
    • 10000 $18.2
    		Buy Now
    TTI IXYB82N120C3H1 Tube 300
    • 1 -
    • 10 -
    • 100 -
    • 1000 $18.16
    • 10000 $18.16
    		Buy Now
    TME IXYB82N120C3H1 1
    • 1 $32.54
    • 10 $25.89
    • 100 $23.25
    • 1000 $23.25
    • 10000 $23.25
    		Get Quote

    IXYB82N120C3H1 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXYB82N120C3H1 IXYS IGBTs - Single, Discrete Semiconductor Products, IGBT 1200V 164A 1040W PLUS264 Original PDF

    IXYB82N120C3H1 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: IXYB82N120C3H1 1200V XPTTM IGBT GenX3TM w/ Diode VCES IC110 VCE sat tfi(typ) High-Speed IGBT for 20-50 kHz Switching = = ≤ = 1200V 82A 3.2V 93ns PLUS264TM Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ


    Original     		PDF IXYB82N120C3H1 IC110 PLUS264TM IF110

    IXYB82N120

    Abstract: 82N120C3 IXYB82N120C3H1
    Text: IXYB82N120C3H1 1200V XPTTM IGBT GenX3TM w/ Diode VCES IC110 VCE sat tfi(typ) High-Speed IGBT for 20-50 kHz Switching = = ≤ = 1200V 82A 3.2V 93ns PLUS264TM Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ


    Original     		PDF IXYB82N120C3H1 IC110 PLUS264TM IF110 82N120C3 IXYB82N120 IXYB82N120C3H1

    Untitled

    Abstract: No abstract text available
    Text: 1200V XPTTM IGBT GenX3TM w/ Diode VCES IC110 VCE sat tfi(typ) IXYB82N120C3H1 High-Speed IGBT for 20-50 kHz Switching = = ≤ = 1200V 82A 3.2V 93ns PLUS264TM Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ


    Original     		PDF IC110 IXYB82N120C3H1 PLUS264TM IF110 82N120C3