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    IXTT16N50D2 Search Results

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    IXTT16N50D2 Price and Stock

    Littelfuse Inc IXTT16N50D2

    MOSFET N-CH 500V 16A TO268
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    DigiKey IXTT16N50D2 Tube 1
    • 1 $20.65
    • 10 $19.048
    • 100 $20.65
    • 1000 $14.76759
    • 10000 $14.76759
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    Newark IXTT16N50D2 Bulk 300
    • 1 -
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    • 100 -
    • 1000 $13.88
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    IXYS Corporation IXTT16N50D2

    MOSFETs D2 Depletion Mode Power MOSFETs
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    Mouser Electronics IXTT16N50D2
    • 1 $20.66
    • 10 $19.06
    • 100 $18.2
    • 1000 $18.2
    • 10000 $18.2
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    Future Electronics IXTT16N50D2 Tube 29 Weeks 300
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    TTI IXTT16N50D2 Tube 300
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    • 1000 $16.5
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    TME IXTT16N50D2 1
    • 1 $19.06
    • 10 $15.27
    • 100 $13.59
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    IXYS Integrated Circuits Division IXTT16N50D2

    MOSFET DIS.16A 500V N-CH TO268(D3PAK) DEPLETION SM
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    Ozdisan Elektronik IXTT16N50D2
    • 1 $24.6115
    • 10 $24.6115
    • 100 $23.0014
    • 1000 $23.0014
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    IXTT16N50D2 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXTT16N50D2 IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 500V 16A TO-268 Original PDF

    IXTT16N50D2 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    t16n50

    Abstract: 16N50 depletion mode mosfet IXTH16N50D2 IXTT16N50D2 DS100261 S5250
    Text: Advance Technical Information IXTH16N50D2 IXTT16N50D2 Depletion Mode MOSFET VDSX ID on RDS(on) = > ≤ 500V 16A 240mΩ Ω N-Channel TO-247 (IXTH) G Symbol Test Conditions Maximum Ratings VDSX TJ = 25°C to 150°C 500 V VDGX TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		IXTH16N50D2 IXTT16N50D2 O-247 O-247) O-268 100ms 16N50D2 t16n50 16N50 depletion mode mosfet IXTH16N50D2 IXTT16N50D2 DS100261 S5250 PDF

    Untitled

    Abstract: No abstract text available
    Text: IXTH16N50D2 IXTT16N50D2 Depletion Mode MOSFETs VDSX ID on RDS(on) = > ≤ 500V 16A 300mΩ Ω N-Channel TO-247 (IXTH) G Symbol Test Conditions Maximum Ratings VDSX TJ = 25°C to 150°C 500 V VDGX TJ = 25°C to 150°C, RGS = 1MΩ 500 V VGSX Continuous ±20


    Original     		IXTH16N50D2 IXTT16N50D2 O-247 O-247) O-268 100ms 16N50D2 PDF

    t16n50

    Abstract: 16N50D2 IXTH16N50D2 IXTT16N50D2 DS100261
    Text: Preliminary Technical Information IXTH16N50D2 IXTT16N50D2 Depletion Mode MOSFET VDSX ID on RDS(on) = > ≤ 500V 16A 240mΩ Ω N-Channel TO-247 (IXTH) G Symbol Test Conditions Maximum Ratings VDSX TJ = 25°C to 150°C 500 V VDGX TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		IXTH16N50D2 IXTT16N50D2 O-247 O-268 O-247) O-247 100ms 16N50D2 t16n50 IXTT16N50D2 DS100261 PDF