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    IXTT10N100D2 Search Results

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    IXTT10N100D2 Price and Stock

    Littelfuse Inc IXTT10N100D2

    MOSFET N-CH 1000V 10A TO268
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    DigiKey IXTT10N100D2 Tube 300
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    • 1000 $12.6855
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    Newark IXTT10N100D2 Bulk 300
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    • 1000 $13.3
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    IXYS Corporation IXTT10N100D2

    MOSFETs D2 Depletion Mode Power MOSFETs
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    Mouser Electronics IXTT10N100D2 220
    • 1 $19.78
    • 10 $18.43
    • 100 $15.62
    • 1000 $12.68
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    Future Electronics IXTT10N100D2 Tube 29 Weeks 300
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    • 100 $12.39
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    TTI IXTT10N100D2 Tube 300
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    • 1000 $12.69
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    TME IXTT10N100D2 1
    • 1 $18.12
    • 10 $14.54
    • 100 $13.06
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    Littelfuse Inc IXTT10N100D2-TRL

    Littelfuse IXTT10N100D2-TRL
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    Mouser Electronics IXTT10N100D2-TRL
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    • 1000 $12.38
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    Ozdisan Elektronik IXTT10N100D2-TRL
    • 1 $23.2954
    • 10 $23.2954
    • 100 $23.2954
    • 1000 $21.7714
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    IXYS Integrated Circuits Division IXTT10N100D2

    MOSFET DIS.10A 1000V N-CH TO268(D3PAK) DEPLETION S
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    Ozdisan Elektronik IXTT10N100D2
    • 1 $23.52598
    • 10 $23.52598
    • 100 $21.9869
    • 1000 $21.9869
    • 10000 $21.9869
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    IXTT10N100D2 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXTT10N100D2 IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 1000V 10A T0-267 Original PDF

    IXTT10N100D2 Datasheets Context Search

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    IXTH10N100D2

    Abstract: No abstract text available
    Text: Advance Technical Information IXTH10N100D2 IXTT10N100D2 Depletion Mode MOSFETs VDSX ID on RDS(on) = > ≤ 1000V 10A 1.5Ω Ω N-Channel TO-247 (IXTH) G Symbol Test Conditions Maximum Ratings VDSX TJ = 25°C to 150°C 1000 V VDGX TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		PDF IXTH10N100D2 IXTT10N100D2 O-247 O-268 O-247) O-247 100ms 100ms 10N100D2

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information Depletion Mode MOSFETs VDSX ID on IXTH10N100D2 IXTT10N100D2 RDS(on) = > ≤ 1000V 10A 1.5Ω Ω N-Channel TO-247 (IXTH) G Symbol Test Conditions Maximum Ratings VDSX TJ = 25°C to 150°C 1000 V VDGX TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		PDF IXTH10N100D2 IXTT10N100D2 O-247 O-247) O-268 100ms 10N100D2