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    IXTP08N100 Search Results

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    IXTP08N100 Price and Stock

    Littelfuse Inc IXTP08N100P

    MOSFET N-CH 1000V 800MA TO220AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXTP08N100P Tube 248 1
    • 1 $2.63
    • 10 $2.63
    • 100 $2.63
    • 1000 $1.00239
    • 10000 $0.99625
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    Newark IXTP08N100P Bulk 300
    • 1 -
    • 10 -
    • 100 $1.83
    • 1000 $1.44
    • 10000 $1.29
    		Buy Now

    Littelfuse Inc IXTP08N100D2

    MOSFET N-CH 1000V 800MA TO220AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXTP08N100D2 Tube 1
    • 1 $3.05
    • 10 $3.05
    • 100 $3.05
    • 1000 $1.206
    • 10000 $1.206
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    IXYS Corporation IXTP08N100P

    MOSFETs 0.8 Amps 1000V 20 Rds
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics IXTP08N100P 297
    • 1 $2.41
    • 10 $1.43
    • 100 $1.29
    • 1000 $1.17
    • 10000 $1.14
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    TTI IXTP08N100P Tube 300
    • 1 -
    • 10 -
    • 100 -
    • 1000 $1.22
    • 10000 $1.17
    		Buy Now
    TME IXTP08N100P 295 1
    • 1 $2.02
    • 10 $1.61
    • 100 $1.44
    • 1000 $1.33
    • 10000 $1.33
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    IXYS Corporation IXTP08N100D2

    MOSFETs N-CH MOSFETS 1000V 800MA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics IXTP08N100D2
    • 1 $3.05
    • 10 $1.96
    • 100 $1.72
    • 1000 $1.61
    • 10000 $1.61
    		Get Quote
    Newark IXTP08N100D2 Bulk 1
    • 1 $3.17
    • 10 $2.04
    • 100 $1.79
    • 1000 $1.67
    • 10000 $1.67
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    Bristol Electronics IXTP08N100D2 12
    • 1 -
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    TTI IXTP08N100D2 Tube 300
    • 1 -
    • 10 -
    • 100 -
    • 1000 $1.61
    • 10000 $1.61
    		Buy Now
    TME IXTP08N100D2 1
    • 1 $2.56
    • 10 $2.18
    • 100 $1.76
    • 1000 $1.43
    • 10000 $1.43
    		Get Quote

    IXYS Integrated Circuits Division IXTP08N100P

    MOSFET DIS.800mA 1000V N-CH TO220 POLAR THT
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Ozdisan Elektronik IXTP08N100P 99
    • 1 $2.03808
    • 10 $2.03808
    • 100 $1.8528
    • 1000 $1.8528
    • 10000 $1.8528
    		Buy Now
    Find more IXTP08N100 price and stock on Findchips.com

    IXTP08N100 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXTP08N100D2 IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 1000V 800MA TO220AB Original PDF
    IXTP08N100P IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 1000V 800MA TO-220 Original PDF

    IXTP08N100 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: Polar VHVTM Power MOSFET IXTA08N100P IXTP08N100P IXTY08N100P VDSS ID25 RDS on = 1000V = 0.8A ≤ Ω 20Ω N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) Symbol Test Conditions VDSS TJ = 25°C to 150°C Maximum Ratings 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		IXTA08N100P IXTP08N100P IXTY08N100P O-263 08N100P PDF

    Untitled

    Abstract: No abstract text available
    Text: PolarTM Power MOSFET VDSS ID25 IXTA08N100P IXTP08N100P IXTY08N100P = 1000V = 0.8A Ω ≤ 20Ω RDS on N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) G Symbol Test Conditions VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 1000


    Original     		IXTA08N100P IXTP08N100P IXTY08N100P O-263 08N100P 4-02-08-A PDF

    08N10

    Abstract: IXTY08N100P ixtp08n100p
    Text: PolarTM Power MOSFET IXTA08N100P IXTP08N100P IXTY08N100P VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated = 1000V = 0.8A ≤ 20Ω Ω TO-263 (IXTA) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		IXTA08N100P IXTP08N100P IXTY08N100P O-263 08N100P 4-02-08-A 08N10 IXTY08N100P ixtp08n100p PDF

    08N100D2

    Abstract: No abstract text available
    Text: Advance Technical Information IXTY08N100D2 IXTA08N100D2 IXTP08N100D2 Depletion Mode MOSFET VDSX ID on RDS(on) N-Channel = > ≤ 1000V 800mA 21Ω Ω TO-252 (IXTY) G S D (TAB) Symbol Test Conditions VDSX TJ = 25°C to 150°C Maximum Ratings 1000 V VDGX TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		IXTY08N100D2 IXTA08N100D2 IXTP08N100D2 800mA O-252 O-220) O-263 100ms 08N100D2 PDF

    IXTP08N100D2

    Abstract: IXTA08N100D2 IXTY08N100D2 08N100 08n10 500VID ixtp08n100 T08N
    Text: Preliminary Technical Information IXTY08N100D2 IXTA08N100D2 IXTP08N100D2 Depletion Mode MOSFET VDSX ID on RDS(on) N-Channel = > ≤ 1000V 800mA 21Ω Ω TO-252 (IXTY) G S D (Tab) Symbol Test Conditions VDSX TJ = 25°C to 150°C VGSX Maximum Ratings 1000 V


    Original     		IXTY08N100D2 IXTA08N100D2 IXTP08N100D2 800mA O-252 O-263 O-220) O-263 O-220 IXTP08N100D2 IXTA08N100D2 IXTY08N100D2 08N100 08n10 500VID ixtp08n100 T08N PDF

    IXTP08N100P

    Abstract: 08N100 08N100P IXTA08N100P ixtp08n100 IXTY08N100P T08N
    Text: IXTA08N100P IXTP08N100P IXTY08N100P PolarTM Power MOSFET VDSS ID25 = 1000V = 0.8A ≤ 20Ω Ω RDS on N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) G Symbol Test Conditions VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 1000


    Original     		IXTA08N100P IXTP08N100P IXTY08N100P O-263 08N100P 4-02-08-A IXTP08N100P 08N100 08N100P IXTA08N100P ixtp08n100 IXTY08N100P T08N PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information Depletion Mode MOSFET VDSX ID on IXTY08N100D2 IXTA08N100D2 IXTP08N100D2 RDS(on) N-Channel = > ≤ 1000V 800mA 21Ω Ω TO-252 (IXTY) G S D (Tab) Symbol Test Conditions VDSX TJ = 25°C to 150°C VGSX Maximum Ratings 1000 V


    Original     		IXTY08N100D2 IXTA08N100D2 IXTP08N100D2 800mA O-252 O-263 O-220) O-263 O-220 PDF

    IXTD08N100P-1A

    Abstract: IXTQ22N60P IXFH20N80P DWS20-200A IXFH24N80P IXFK180N15P IXTQ22N50P DWHP16-12 IXGH64N60A3 IXFB50N80Q2
    Text: www.ixys.com Contents Page Symbols and Definitions Nomenclature General Informations for Chips Assembly Instructions FRED, Rectifier Diode and Thyristor Chips in Planar Design 2 2 3 4 5 IGBT Chips VCES G-Series, Low VCE sat B2 Types G-Series, Fast C2 Types


    Original     		PDF

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


    Original     		P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS PDF

    IXTA02N100D2

    Abstract: depletion 400V power mosfet IXTP02N100D2 N-Channel Depletion-Mode MOSFET high voltage depletion-mode MOSFET IXTU02N100D2 MOSFET "CURRENT source" IXTY02N100D2 Depletion MOSFET IXTY1R6N50D2
    Text: Depletion-Mode Power MOSFETs and Applications Abdus Sattar, IXYS Corporation Applications like constant current sources, solid-state relays, telecom switches and high voltage DC lines in power systems require N-channel Depletion-mode power MOSFET that operates as a normally “on” switch when the gate-to-source voltage is zero VGS=0V .


    Original     		AN-D16, IXTA02N100D2 depletion 400V power mosfet IXTP02N100D2 N-Channel Depletion-Mode MOSFET high voltage depletion-mode MOSFET IXTU02N100D2 MOSFET "CURRENT source" IXTY02N100D2 Depletion MOSFET IXTY1R6N50D2 PDF

    IXTH6N100D2

    Abstract: IXTA6N100D2 IXTP3N50D2 IXTA3N50D2 IXTY1R6N50D2 MOSFET 400V TO-220 dz1 ZENER DIODE depletion mode mosfet n-channel 1000V IXTP08N100D2
    Text: POWER N E W Efficiency Through Technology P RO D U CT BR I E F 500V-1000V Depletion-Mode D2TM Power MOSFETs ‘Normally-on’ power mosfet solutions for dynamic load and zero power load switching applications october 2009 OVERVIEW As green energy trends continue to grow in popularity, today’s Design Engineers are now


    Original     		00V-1000V PBN50100D2 IXTH6N100D2 IXTA6N100D2 IXTP3N50D2 IXTA3N50D2 IXTY1R6N50D2 MOSFET 400V TO-220 dz1 ZENER DIODE depletion mode mosfet n-channel 1000V IXTP08N100D2 PDF

    IXGP70N33

    Abstract: IXGQ90N33 SK0604 IXTP76N075 IXER35N120D1 IXGP70N33TBM-A DH60-18A VBO19 SK0712 IXTH1N250
    Text: Efficiency Through Technology RELIABILITY REPORT 2008 Power Semiconductor Devices January 2006 - December 2007 IXYS Corporation 3540 Bassett Street Santa Clara CA 95054 USA Published February 2008 IXYS Semiconductor GmbH Edisonstrasse 15 D-68623 Lampertheim


    Original     		D-68623 IXBOD1-08 IXBOD1-09 IXBOD1-10 DSEP30-06BR DSEP30-12CR IXGP70N33 IXGQ90N33 SK0604 IXTP76N075 IXER35N120D1 IXGP70N33TBM-A DH60-18A VBO19 SK0712 IXTH1N250 PDF