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    IXTM12N45 Search Results

    IXTM12N45 Datasheets (9)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXTM12N45 IXYS High Voltage Power MOSFETs Scan PDF
    IXTM12N45 IXYS High Voltage Power MOSFETs Scan PDF
    IXTM12N45 IXYS 12 AMPS/ 450-500V/ 0.4OM/0.5OM Scan PDF
    IXTM12N45 Unknown FET Data Book Scan PDF
    IXTM12N45 Sharp 450 V, 12 A, sourse-drain diode Scan PDF
    IXTM12N45A IXYS High Voltage Power MOSFETs Scan PDF
    IXTM12N45A IXYS HIGH VOLTAGE POWER MOSFET DIE Scan PDF
    IXTM12N45A IXYS High Voltage Power MOSFETs Scan PDF
    IXTM12N45A Unknown FET Data Book Scan PDF

    IXTM12N45 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IXFH15N100

    Abstract: 2N3051 IXFX15N100 IXFH40N30 IXFM6N90 IRFP450R IXTH24N50L IXTH26N50 IXFH20N50 IXFH9N80
    Text: STI Type: IRFP354 Notes: Breakdown Voltage: 450 Continuous Current: 14 RDS on Ohm: 0.35 Trans Conductance Mhos: 5.9 Trans Conductance A: 8.4 Gate Threshold min: 2.0 Gate Threshold max: 4.0 Resistance Switching ton: 14 TYP Resistance Switching toff: 89 TYP


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    PDF IRFP354 O-247 IRFP360LC 2N3049DIE 2C3049 O-204AA/TO-3 IXTM20N55A IXFH15N100 2N3051 IXFX15N100 IXFH40N30 IXFM6N90 IRFP450R IXTH24N50L IXTH26N50 IXFH20N50 IXFH9N80

    12N50

    Abstract: IXTH12N45 IXTH12N50 IXTM12N45 IXTM12N50 12N45
    Text: I X Y S CORP 1ÔE D • 4bôb2Sb QOQOblB =1 IXTH12N45 , IXTH12N50, IXTM12N45, IXTM12N50 12 AM PS, 450-500 V, 0.4Q/0.5Q MAXIMUM RATINGS Parameter Sym. Drain-Source Voltage 1 Gate-Source Voltage Transient Drain Current Continuous (Tc =25°C) Vdss VdGR Vgs


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    PDF IXTH12N45 IXTH12N50, IXTM12N45, IXTM12N50 IXTH12N45 IXTM12N45 IXTH12N50 O-247 00A//js 12N50 IXTM12N45 12N45

    IXTH12N50

    Abstract: No abstract text available
    Text: I X Y S CORP 1 ÔE D • 4bôb22b GOGGblB <=1 IXTH12N45, IXTH12N50, IXTM12N45, IXTM12N50 12 AMPS, 450-500 V, 0.4Q/0.5Q MAXIMUM RATINGS Parameter Sym. Drain-Source Voltage 1 Drain-Gate Voltage (RQS=1.0 MQ) (1) Gate-Source Voltage Continuous Gate-Source Voltage Transient


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    PDF IXTH12N45, IXTH12N50, IXTM12N45, IXTM12N50 IXTH12N45 IXTM12N45 IXTH12N50 IXTM12N50 O-204 O-220

    IRF250

    Abstract: IXTH13P20 IXTP2N95 IXTP2N100A IXTP2N95A IXTP4N100 IXTP4N100A IXTP4N90 IXTP4N90A IXTP4N95
    Text: I X Y S CORP 1ÔE D • 4böb52b QQODSbl S ■ f JIGH VOLTAGE POWER MOSFETs The IXYS family of high voltage Nand P-channel Power MOSFETs is designed to provide superior per­ formance and ruggedness in high voltage switching applications. In addition, they are directly com­


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    PDF 00V/12A IRF250 IXTH13P20 IXTP2N95 IXTP2N100A IXTP2N95A IXTP4N100 IXTP4N100A IXTP4N90 IXTP4N90A IXTP4N95

    IXTH13P20

    Abstract: 2n7100 IXTP2P50 MOSFET IRF460 irf460 to-247 IXTM10P50 IXTM11P50 IXTP4N100A 2n7103 irf460
    Text: I X Y S CORP 1ÔE D • 4böb52b QQODSbl S ■ f JIGH VOLTAGE POWER MOSFETs The IXYS family of high voltage Nand P-channel Power MOSFETs is designed to provide superior per­ formance and ruggedness in high voltage switching applications. In addition, they are directly com­


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    PDF

    IXTM6N90A

    Abstract: No abstract text available
    Text: 4686226 03E 00145 I X Y S CORP I X Y S CORP □3 D D Ë T | 4bflbS2b DDODIMS 2 N-Channel MOSFETs Drain Current Id @ 25 °C C ase On R esistance Part Drain-Source Voltage Number V BR DSS l[>(Cont) lO(Pulsed) RDS(on) (Volts) (Amps) (Amps) (O hm s) 1000 1000


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    PDF IXTM5N100A IXTM5N100 IXTM4N100A IXTM4N100 IXTM2N100A IXTM2N100 IXTM5N95A IXTM5N95 IXTM4N95A IXTM4N95 IXTM6N90A

    IXTH15N45A

    Abstract: No abstract text available
    Text: 4686226 I X Y S 03 CORP d F | 4 1. f l t=,2 2 1> D D O O E I S 2 |~~ / 3 / " □IXYS TECHNICAL DATA SHEET August 1988 DATA SHEET NO. 1004A IRFC450 High Voltage Power MOSFET Die N-Channel Enhancement Mode High Ruggedness Series V B R D S S - . 500V


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    PDF IRFC450: 2N6769 2N6770 IRF450/IRFP450 IRF451/IRFP451 IRF452/IRFP452 1RF453/IRFP453 IXTH15N50A/IXTM15N50A IXTH15N45A/IXTM15N45A 12N50A/IXTM12N50A IXTH15N45A

    1800 IXYS

    Abstract: IXTM4N70A IXTM4N80 IXTM4N90 IXTM5N100 to-204
    Text: - m s it * f M t Vd s or € t JV £ Ta=25°C Vg s Ig s s Id s s Vg s th) F D s (on) Vd s = * /CH * /CH g fs lo (o n ) Ciss Coss C rss (*typ) (*typ) (*typ) (V) (W) (A) (nA) Vg s (V) < UA) Vd s (V) Id (mA) (max) (max) (max) (V) (V) (pF) (pF) (pF) 5^ m m %


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    PDF M4N50 T0-204 1XTM4N50A O-204 1XTM4N70 IXTM4N70A IXTM10N90A 1800 IXYS IXTM4N80 IXTM4N90 IXTM5N100 to-204

    IRFP450 inverter

    Abstract: IXTH12N50A IXTH15N45A 2N6769 2N6770 IRFC450 IXTH12N50 ITXH12N45
    Text: 4686226 I X Y S CORP 03 D e | 4 fl t. E S t. DOODEIS 5 / 7 □IXYS TECHNICAL DATA SHEET August 1988 DATA SHEET NO. 1004A IRFC450 High Voltage Power MOSFET Die N-Channel Enhancement Mode High Ruggedness Series V B R D S S - . 500V 0.4Q RDS(on) .


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    PDF IRFC450: 2N6769 2N6770 IRF450/IRFP450 IRF451/IRFP451 IRF452/IRFP452 1RF453/IRFP453 IXTH15N50A/IXTM15N50A IXTH15N45A/IXTM15N45A IXTH12N50A/IXTM12N50A IRFP450 inverter IXTH12N50A IXTH15N45A 2N6770 IRFC450 IXTH12N50 ITXH12N45