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    IXTK180N15P Search Results

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    IXTK180N15P Price and Stock

    Littelfuse Inc IXTK180N15P

    MOSFET N-CH 150V 180A TO264
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    DigiKey IXTK180N15P Tube 331 1
    • 1 $17.22
    • 10 $17.22
    • 100 $17.22
    • 1000 $9.32438
    • 10000 $9.32438
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    Verical IXTK180N15P 30 30
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    • 100 $12.0824
    • 1000 $10.3824
    • 10000 $10.3824
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    Arrow Electronics IXTK180N15P 25 44 Weeks 25
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    • 100 $12.071
    • 1000 $10.3726
    • 10000 $10.3726
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    IXYS Corporation IXTK180N15P

    MOSFETs 180 Amps 150V 0.01 Ohm Rds
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    Mouser Electronics IXTK180N15P 1,214
    • 1 $15.16
    • 10 $15.06
    • 100 $9.32
    • 1000 $9.32
    • 10000 $9.32
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    Newark IXTK180N15P Bulk 1
    • 1 $15.77
    • 10 $13.11
    • 100 $9.69
    • 1000 $9.69
    • 10000 $9.69
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    Future Electronics IXTK180N15P Tube 300
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    • 100 $9.14
    • 1000 $9.14
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    TTI IXTK180N15P Tube 150 25
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    • 100 $9.32
    • 1000 $9.32
    • 10000 $9.32
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    TME IXTK180N15P 169 1
    • 1 $14.13
    • 10 $11.58
    • 100 $11.26
    • 1000 $10.28
    • 10000 $10.28
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    Chip 1 Exchange IXTK180N15P 15
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    New Advantage Corporation IXTK180N15P 146 1
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    • 100 $21.05
    • 1000 $19.65
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    IXYS Integrated Circuits Division IXTK180N15P

    MOSFET DIS.180A 150V N-CH TO264 POLARHT
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Ozdisan Elektronik IXTK180N15P 146
    • 1 $15.71006
    • 10 $15.71006
    • 100 $14.6823
    • 1000 $14.6823
    • 10000 $14.6823
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    IXTK180N15P Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXTK180N15P IXYS PolarHT Power MOSFET Original PDF

    IXTK180N15P Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    IXTK180N15P

    Abstract: No abstract text available
    Text: PolarTM Power MOSFET VDSS ID25 IXTK180N15P RDS on = 150V = 180A Ω ≤ 10mΩ N-Channel Enhancement Mode Avalanche Rated TO-264 Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ 150 150 V V VGSS VGSM Continuous


    Original
    IXTK180N15P O-264 180N15P 6-19-08-D IXTK180N15P PDF

    IXTK180N15P

    Abstract: No abstract text available
    Text: IXTK180N15P PolarTM Power MOSFET VDSS ID25 RDS on = 150V = 180A Ω ≤ 10mΩ N-Channel Enhancement Mode Avalanche Rated TO-264 Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ 150 150 V V VGSS VGSM Continuous


    Original
    IXTK180N15P O-264 180N15P 6-19-08-D IXTK180N15P PDF

    STW20N60

    Abstract: 2n60p IXFB100N50 IXFB100N50P STW20N60FD IXFB100N50P TO-264 ixys ixfn100n50p IXFN48n60p IXFH30N60P ixfn100n50p
    Text: PolarHTTM 55V to 300V Standard Power MOSFETs Benefits of Polar HTTM and Polar HVTM This new “Polar” technology platform utilizes a patented proprietary cell design, as well as numerous process improvements that reduce RDS(on) by over 30% per unit area, while also reducing Qg by an equal


    Original
    O-220, ISOPLUS220TM, O-247, ISOPLUS247TM, O-264, ISOPLUS264TM. PLUS220 ISOPLUS220TM PLUS220SMD O-252 STW20N60 2n60p IXFB100N50 IXFB100N50P STW20N60FD IXFB100N50P TO-264 ixys ixfn100n50p IXFN48n60p IXFH30N60P ixfn100n50p PDF

    IXGP70N33

    Abstract: IXGQ90N33 SK0604 IXTP76N075 IXER35N120D1 IXGP70N33TBM-A DH60-18A VBO19 SK0712 IXTH1N250
    Text: Efficiency Through Technology RELIABILITY REPORT 2008 Power Semiconductor Devices January 2006 - December 2007 IXYS Corporation 3540 Bassett Street Santa Clara CA 95054 USA Published February 2008 IXYS Semiconductor GmbH Edisonstrasse 15 D-68623 Lampertheim


    Original
    D-68623 IXBOD1-08 IXBOD1-09 IXBOD1-10 DSEP30-06BR DSEP30-12CR IXGP70N33 IXGQ90N33 SK0604 IXTP76N075 IXER35N120D1 IXGP70N33TBM-A DH60-18A VBO19 SK0712 IXTH1N250 PDF