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    IXTH1N200P3 Search Results

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    IXTH1N200P3 Price and Stock

    IXYS Corporation IXTH1N200P3

    MOSFET N-CH 2000V 1A TO247
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXTH1N200P3 Tube 541 1
    • 1 $9.67
    • 10 $9.67
    • 100 $5.70233
    • 1000 $4.40075
    • 10000 $4.40075
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    Mouser Electronics IXTH1N200P3 1,618
    • 1 $8.31
    • 10 $7.83
    • 100 $5.17
    • 1000 $4.81
    • 10000 $4.81
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    Future Electronics IXTH1N200P3 Tube 24 Weeks 30
    • 1 -
    • 10 -
    • 100 $5.52
    • 1000 $5.52
    • 10000 $5.52
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    TTI IXTH1N200P3 Tube 30
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
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    Littelfuse Inc IXTH1N200P3HV

    MOSFET N-CH 2000V 1A TO247HV
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXTH1N200P3HV Tube 255 1
    • 1 $8.81
    • 10 $8.81
    • 100 $5.50667
    • 1000 $4.70875
    • 10000 $4.70875
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    Verical IXTH1N200P3HV 194 10
    • 1 -
    • 10 $8.6338
    • 100 $7.2324
    • 1000 $6.468
    • 10000 $6.468
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    Newark IXTH1N200P3HV Bulk 300
    • 1 -
    • 10 -
    • 100 -
    • 1000 $4.94
    • 10000 $4.94
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    Quest Components IXTH1N200P3HV 155
    • 1 $12.0533
    • 10 $12.0533
    • 100 $9.9105
    • 1000 $9.3748
    • 10000 $9.3748
    		Buy Now

    IXYS Corporation IXTH1N200P3HV

    MOSFETs 2000V/1A HV Power MOSFET, TO-247HV
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics IXTH1N200P3HV 318
    • 1 $8.81
    • 10 $8.81
    • 100 $5.5
    • 1000 $4.7
    • 10000 $4.7
    		Buy Now
    TTI IXTH1N200P3HV Tube 300
    • 1 -
    • 10 -
    • 100 -
    • 1000 $4.71
    • 10000 $4.71
    		Buy Now
    TME IXTH1N200P3HV 1
    • 1 $8.08
    • 10 $6.42
    • 100 $5.77
    • 1000 $5.77
    • 10000 $5.77
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    New Advantage Corporation IXTH1N200P3HV 150 1
    • 1 -
    • 10 -
    • 100 $5.42
    • 1000 $5.42
    • 10000 $5.42
    		Buy Now

    Littelfuse Inc IXTH1N200P3

    Mosfet, N-Ch, 2Kv, 1A, 150Deg C, 125W; Channel Type:N Channel; Drain Source Voltage Vds:2Kv; Continuous Drain Current Id:1A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V Rohs Compliant: Yes |Littelfuse IXTH1N200P3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark IXTH1N200P3 Bulk 50 1
    • 1 $8.18
    • 10 $8.18
    • 100 $5.1
    • 1000 $4.31
    • 10000 $4.31
    		Buy Now

    IXYS Integrated Circuits Division IXTH1N200P3HV

    MOSFET DIS.1A 2000V N-CH TO-247HV HIGH VOLTAGE
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Ozdisan Elektronik IXTH1N200P3HV 218
    • 1 $8.9958
    • 10 $8.9958
    • 100 $8.178
    • 1000 $8.178
    • 10000 $8.178
    		Buy Now
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    IXTH1N200P3 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXTH1N200P3 IXYS Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 2000V 1A TO-247 Original PDF
    IXTH1N200P3HV IXYS Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 2000V 1A TO-247HV Original PDF

    IXTH1N200P3 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    T1N200

    Abstract: No abstract text available
    Text: Advance Technical Information IXTA1N200P3HV IXTH1N200P3 High Voltage Power MOSFETs VDSS ID25 = 2000V = 1.0A   40 RDS on N-Channel Enhancement Mode TO-263HV (IXTA) G S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 2000


    Original     		IXTA1N200P3HV IXTH1N200P3 O-263HV ID110 100ms 1N200P3 T1N200 PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information IXTA1N200P3HV IXTH1N200P3HV IXTH1N200P3 High Voltage Power MOSFET VDSS ID25 = 2000V = 1.0A   40 RDS on N-Channel Enhancement Mode TO-263HV (IXTA) G S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C


    Original     		IXTA1N200P3HV IXTH1N200P3HV IXTH1N200P3 O-263HV ID110 100ms PDF

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information IXTA1N200P3HV IXTH1N200P3 High Voltage Power MOSFET VDSS ID25 = 2000V = 1.0A   40 RDS on N-Channel Enhancement Mode TO-263HV (IXTA) G S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 2000


    Original     		IXTA1N200P3HV IXTH1N200P3 O-263HV ID110 100ms 1N200P3 PDF