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IXYS Corporation IXTH12N100 MOSFET N-CH 1000V 12A TO247
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXTH12N100	Tube			30	1 - 10 - 100 $9.06033 1000 $9.06033 10000 $9.06033	Buy Now
Quest Components	IXTH12N100		28			1 $15.2 10 $11.4 100 $9.88 1000 $9.88 10000 $9.88	Buy Now
Littelfuse Inc IXTH12N100L MOSFET N-CH 1000V 12A TO247
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXTH12N100L	Tube			1	1 $20.91 10 $20.91 100 $13.94067 1000 $20.91 10000 $20.91	Buy Now
Newark	IXTH12N100L	Bulk			300	1 - 10 - 100 - 1000 $14.57 10000 $14.57	Buy Now
IXYS Corporation IXTH12N100L MOSFETs 12 Amps 1000V 1.3 Ohms Rds
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	IXTH12N100L					1 $21.59 10 $21.55 100 $14.65 1000 $14.65 10000 $14.65	Get Quote
Quest Components	IXTH12N100L		5			1 $21.345 10 $21.345 100 $21.345 1000 $21.345 10000 $21.345	Buy Now
TTI	IXTH12N100L	Tube			300	1 - 10 - 100 - 1000 $13.9 10000 $13.9	Buy Now
TME	IXTH12N100L				1	1 $20.32 10 $20.32 100 $17.19 1000 $16.11 10000 $16.11	Get Quote
New Advantage Corporation	IXTH12N100L		69		1	1 - 10 $34.27 100 $31.98 1000 $31.98 10000 $31.98	Buy Now
IXYS Integrated Circuits Division IXTH12N100L MOSFET DIS.12A 1000V N-CH TO-247AD LINEAR
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Ozdisan Elektronik	IXTH12N100L		86			1 $25.78368 10 $25.78368 100 $24.0969 1000 $24.0969 10000 $24.0969	Buy Now

IXTH12N100 Datasheets (5)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
IXTH12N100		IXYS	1000V HiPerFET power MOSFET		Original	PDF
IXTH12N100		IXYS	MegaMOS Power MOSFETs		Scan	PDF
IXTH12N100		Unknown	Shortform Datasheet & Cross References Data		Short Form	PDF
IXTH12N100L		IXYS	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 1000V 12A TO-247		Original	PDF
IXTH12N100SN		IXYS	Transistor Mosfet N-CH 1000V 12A 3TO-247 AD		Original	PDF

IXTH12N100 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
IXTH12N100L Abstract: No abstract text available Text: IXTH12N100L LinearTM Power MOSFET w/ Extended FBSOA VDSS ID25 RDS on = 1000V = 12A ≤ 1.3Ω Ω N-Channel Enhancement Mode Avalanche Rated TO-247 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ	Original	PDF	IXTH12N100L O-247 12N100L 9-10-A IXTH12N100L
IXTH12N100L Abstract: No abstract text available Text: Preliminary Technical Information Linear Power MOSFET IXTH12N100L With Extended FBSOA VDSS ID25 N-Channel Enhancement Mode RDS on Symbol Test Conditions VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1000 V VGS Continuous ±30 V VGSM	Original	PDF	IXTH12N100L O-247 12N100L 4-05-07-A IXTH12N100L
RSS RESISTOR Abstract: ltc4366-2 Text: LTC4366-1/LTC4366-2 High Voltage Surge Stopper Features n n n n n n n n Description Rugged Floating Topology Wide Operating Voltage Range: 9V to >500V Adjustable Output Clamp Voltage Controls N-Channel MOSFET Adjustable Protection Timer Internal 9 Second Cool-Down Timer	Original	PDF	LTC4366-1/LTC4366-2 LTC4366 LTC4355 LT4363 LTC4365 com/LTC4366 436612fd RSS RESISTOR ltc4366-2
IRF1830G Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696 Text: Power MOSFETs Cross-reference guide May 2005 www.st.com/pmos Contents 2 Alpha and Omega Semiconductor 3 AnalogicTech 3 Anpec 3 APEC 3 APT 4 AUK 4 Fairchild 4 Fuji 12 Hi-Sincerity 14 Hitachi 14 Inﬁneon 14 IR 18 IXYS 22 Matsushita 23 Reneas 23 Motorola 23	Original	PDF	AO4405 AO4407 AO4408 AO4409 AO4410 AO4411 AO4413 AO4415 AO4422 AO4700 IRF1830G IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696
IRF540 complementary Abstract: IRFZ44N complementary std2n52 TOSHIBA IRFZ44A datasheet STP2NA60 SSH6N80 rfp60n06 ste38na50 IRF630 complementary IRF3205 IR Text: Sales type RFP6N50 RFD16N03LSM RFP15N05L RFP50N05 RFP15N05 RFP50N05L RFD14N05L RFD14N05LSM RFD14N05SM RFP14N05L RFP25N05 RFP14N05 HUF75344P3 HUF75344S3S HUF75345S3S HUF75345G3 HUF75343S3S HUF75307D3S HUF75344G3 HUF75345P3 HUF75343P3 HUF5343G3 HUF75321P3 HUF75329P3	Original	PDF	RFP6N50 RFD16N03LSM RFP15N05L RFP50N05 RFP15N05 RFP50N05L RFD14N05L RFD14N05LSM RFD14N05SM RFP14N05L IRF540 complementary IRFZ44N complementary std2n52 TOSHIBA IRFZ44A datasheet STP2NA60 SSH6N80 rfp60n06 ste38na50 IRF630 complementary IRF3205 IR
LTC4366 Abstract: LTC4366-1 zener p2t how to increase an current from DC 18v to 250v 464m LTC4366ITS8-1 lm117 3A LTC4366HDDB-2 LM117 LT3850 Text: LTC4366-1/LTC4366-2 High Voltage Surge Stopper FEATURES n n n n n n n n DESCRIPTION Rugged Floating Topology Wide Operating Voltage Range: 9V to >500V Adjustable Output Clamp Voltage Controls N-Channel MOSFET Adjustable Protection Timer Internal 9 Second Cool-Down Timer	Original	PDF	LTC4366-1/LTC4366-2 LTC4366 LT3850 LTC3890 LT4256 LTC4260 LT4352 LTC4354 LTC4355 LTC4366-1 zener p2t how to increase an current from DC 18v to 250v 464m LTC4366ITS8-1 lm117 3A LTC4366HDDB-2 LM117
IXAN0068 Abstract: IXTK46N50L Abdus Sattar, Vladimir Tsukanov, "Power MOSFETs 1000V 2A BJT 1200W MOSFET power IXTH24n50l mosfet modern applications 400V linear regulator IXTN62N50L IXTH12N100L Text: Linear Power MOSFETS Basic and Applications Abdus Sattar, Vladimir Tsukanov, IXYS Corporation IXAN0068 Applications like electronic loads, linear regulators or Class A amplifiers operate in the linear region of the Power MOSFET, which requires high power dissipation capability	Original	PDF	IXAN0068 6710405B2, IXAN0068 IXTK46N50L Abdus Sattar, Vladimir Tsukanov, "Power MOSFETs 1000V 2A BJT 1200W MOSFET power IXTH24n50l mosfet modern applications 400V linear regulator IXTN62N50L IXTH12N100L
IXFH15N100 Abstract: 2N3051 IXFX15N100 IXFH40N30 IXFM6N90 IRFP450R IXTH24N50L IXTH26N50 IXFH20N50 IXFH9N80 Text: STI Type: IRFP354 Notes: Breakdown Voltage: 450 Continuous Current: 14 RDS on Ohm: 0.35 Trans Conductance Mhos: 5.9 Trans Conductance A: 8.4 Gate Threshold min: 2.0 Gate Threshold max: 4.0 Resistance Switching ton: 14 TYP Resistance Switching toff: 89 TYP	Original	PDF	IRFP354 O-247 IRFP360LC 2N3049DIE 2C3049 O-204AA/TO-3 IXTM20N55A IXFH15N100 2N3051 IXFX15N100 IXFH40N30 IXFM6N90 IRFP450R IXTH24N50L IXTH26N50 IXFH20N50 IXFH9N80
Irfp250 irfp460 Abstract: IXTA3N120 36P10 IRFP450 bridge n503 irfp460 complementary IXTH30N25 IXTH48N15 IXTH12N100Q 16p20 Text: OD Discrete Power MOSFETs G U Standard N-channel types V DSS min. V p W o n t DS on) TO-247 C“ "^C = 25°C 25°C A a As TO-204 (M) 150 (K) (R) TO-268 SOT-227B (N) ^ -W 60 0.024 IXTH60N10 67 0.025 IXTH67N10 75 75 0.020 0.020 IXTH75N10 48 TO-220 TO-252 (Y)	OCR Scan	PDF	O-204 O-264 ISOPLUS247 O-220 O-252 O-247 O-268 ISOPLUS220 O-263 OT-227B Irfp250 irfp460 IXTA3N120 36P10 IRFP450 bridge n503 irfp460 complementary IXTH30N25 IXTH48N15 IXTH12N100Q 16p20
1XTH5N100 Abstract: xth6n90 IRFP460 equivalent IXTH7P50 ixth10p50 Text: lOIXYS_ Standard Power MOSFET and MegaMOS FET Chips N-Channel Enhancement-Mode Type Vwa ÖWL T r ia r e V V 1 M * A iijfit CMpsiza dimensions S o w n OP bvftdw trft iw a in w id Equivalent «M ae Own. out line No mm mils IXTD67N10 IXTD75N10	OCR Scan	PDF	IXTD67N10 IXTD75N10 IRFC250 IXTD42N20 IXTD50N20 IXTD68N20 IRFC254 IXTD40N25 IXTD35M30 IXTD40N30 1XTH5N100 xth6n90 IRFP460 equivalent IXTH7P50 ixth10p50
megamos Abstract: f g megamos megamos 48 ID 48 Megamos megamos 13 IXTH40N25 IXTH12N95 IXTH12N100 IXTH26N50 IXTH11N95 Text: I X Y S CORP The MegaMOS family of large scale monolithic Power MOSFETs provides significantly higher power handling capability than industry standard MOSFETs. With HDMOS technology, IXYS has increased its chip sizes without a major cost penalty to the user. Unlike the popular size 3 ,4	OCR Scan	PDF	O-204 O-247 megamos f g megamos megamos 48 ID 48 Megamos megamos 13 IXTH40N25 IXTH12N95 IXTH12N100 IXTH26N50 IXTH11N95
Untitled Abstract: No abstract text available Text: g ixYs VDSS ! RDS on 1000 V 10 A 1.20 n 1000 V 12 A 1.05 Û IXTH/IXTM10 N100 IXTH/IXTM12 N100 MegaMOS FET 1D25 N-Channel Enhancement Mode Maximum Ratings Symbol Test Conditions v’ DSS ^ v 0GR Td = 25°C to 150“C; RGS = 1 Mi2 = 25°C to 150°C 1000 V	OCR Scan	PDF	IXTH/IXTM10 IXTH/IXTM12 10N100 12N100 O-247 O-204 O-247 IXTH10N100
ixth12n100 Abstract: 12n100 3055P Text: n ix Y S MegaMOS FET IXTH / IXTM 10N100 IXTH / IXTM 12N100 VDSS ^D25 1000 V 1000 V 10 A 12 A p DS on 1.20 Q 1.05 Q N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings V DSS T0 =25°Cto150°C 1000 V VDGR Tj = 25° C to 150° C; RGS= 1 Mi2 1000	OCR Scan	PDF	10N100 12N100 Cto150 O-247AD O-204 O-204 ixth12n100 3055P