IXGP2N100A Search Results

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IXYS Corporation IXGP2N100A IGBT 1000V 4A 25W TO220AB
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IXGP2N100A Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
IXGP2N100A		IXYS	1000V high voltage IGBT		Original	PDF

IXGP2N100A Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
STR-G6551 Abstract: STR-F6654 g6551 TDA16822 STR-F6653 strg6551 IGBT cross reference KA5M0565R TOP224Y equivalent BUP 312 Text: Cross Reference, V1.0, Apr. 2002 Alphanumerical Cross Reference CoolMOSTM/IGBT/EmConTM/CoolSETTM Power Management & Supply N e v e r s t o p t h i n k i n g . Alphanumerical Cross Reference Revision History: 2002-04 V1.0 Previous Version: Page Subjects major changes since last revision	Original	PDF	2002-Sep. STR-G6551 STR-F6654 g6551 TDA16822 STR-F6653 strg6551 IGBT cross reference KA5M0565R TOP224Y equivalent BUP 312
Untitled Abstract: No abstract text available Text: Advanced Technical Information High Voltage IGBT VCES IXGP 2N100 1000 V IXGP 2N100A 1000 V Symbol Test Conditions VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1000 V VGES Continuous ±20 V VGEM Transient ±30 V IC90 VCE SAT 1.5 A	Original	PDF	2N100 2N100A O-220
200n60 Abstract: 20N30 n60c 50N60 7N60B IC IGBT 25N120 IC600 80n60 60n60 igbt 25N120 Text: HiPerFASTTM IGBT G-Series Insulated Gate Bipolar Transistors IGBT IGBT with Fast Diode HiPerFASTTM IGBT G-Series Contents IGBT VCES V 300 Low VCE(sat) 600 1000 TO-220 TO-263 TO-247 IC VCE(sat) (IXGP) (IXGA) (IXGH) max TC = 25 °C TC=25 °C A V 40 56 60 40	Original	PDF	PLUS247 20N30 28N30 30N30 40N30 31N60 38N60 41N60 60N60 O-264 200n60 20N30 n60c 50N60 7N60B IC IGBT 25N120 IC600 80n60 60n60 igbt 25N120
Untitled Abstract: No abstract text available Text: Advance Technical Information High Voltage IGBT VCES IXGP 2N100 1000 V IXGP 2N100A 1000 V Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1000 V VGES Continuous ±20 V VGEM Transient ±30 V IC25	Original	PDF	2N100 2N100A O-220 O-220
IXGP2N100 Abstract: IXGP2N100A 2N100 IXYS 2N100A Text: High Voltage IGBT VCES IXGP 2N100 1000 V IXGP 2N100A 1000 V Symbol Test Conditions VCES TJ = 25°C to 150°C Maximum Ratings 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1000 V VGES Continuous ±20 V VGEM Transient ±30 V I C25 TC = 25°C 4 A I C90 TC = 90°C	Original	PDF	2N100 2N100A O-220 IXGP2N100A IXGP2N100 IXGP2N100 IXGP2N100A IXYS
Untitled Abstract: No abstract text available Text: VCES High Voltage IGBT IXGP 2N100 1000 V IXGP 2N100A 1000 V Symbol Test Conditions VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1000 V VGES Continuous ±20 V VGEM Transient ±30 V I C25 TC = 25°C 4 A I C90 TC = 90°C 2 A ICM TC = 25°C, 1 ms	Original	PDF	2N100 2N100A O-220 IXGP2N100A IXGP2N100
VL800 Abstract: No abstract text available Text: BIXYS High Voltage IGBT ^C E S IX G P 2 N 1 0 0 j 1000 V ! IX G P 2 N 1 0 0 A 1000 V C90 : ^C E S A T 1.5 A : 3.5 V 1.5 A I 4.0 V Advanced Technical Information Symbol Test C o n d itio n s V CES Tj = 25°C to 150°C 1000 V V CGR Tj = 25°C to 150°C; RGÊ= 1 MQ	OCR Scan	PDF	O-220 VL800
Ixgr50n60 Abstract: IXGN60N60 IXGX120N60B ISOPLUS247TM IXGR40N60 IXGH60N60 ixgh32n170 ixgh35n120 IXGA20N60B IXGP12N60C Text: Discrete ÌGBT Ultra Hi9h Speed 9" Suffix c High Speed Series vT ces C<2S V A VCE SAT) max V »n typ ns T 0 -2 2 0 PLUS247 (X) " TO-263 (A) I3-Pac (J) TO-247 (H) J ♦ ► Ne yv TO-268AA TO-204 (T) (M) ISOPLUS22Û lSOPLUS247™{R) SOT-227B (N) TO-264 (K)	OCR Scan	PDF	O-263 PLUS247TM O-247 IXGH28N60B IXGH31N60 O-268AA O-204 lSOPLUS247TM OT-227B IXGA20N120 Ixgr50n60 IXGN60N60 IXGX120N60B ISOPLUS247TM IXGR40N60 IXGH60N60 ixgh32n170 ixgh35n120 IXGA20N60B IXGP12N60C