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    IXGH32N50BU1S Search Results

    IXGH32N50BU1S Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXGH32N50BU1S IXYS HiPerFAST IGBT with Diode Combi Pack Original PDF

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    IXGH32N50BU1

    Abstract: IXGH32N50BU1S
    Text: Preliminary Data Sheet IXGH32N50BU1 IXGH32N50BU1S HiPerFASTTM IGBT with Diode Combi Pack VCES IC25 VCE sat tfi = = = = 500 V 60 A 2.0 V 80 ns TO-247 SMD (32N50BU1S) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 500 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ


    Original     		PDF IXGH32N50BU1 IXGH32N50BU1S O-247 32N50BU1S) IXGH32N50BU1 IXGH32N50BU1S

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Data Sheet IXGH32N50BU1 IXGH32N50BU1S Hi Per FAST IGBT with Diode Combi Pack V CES ^C25 v CE sat K 500 V 60 A 2.0 V 80 ns TO-247 SMD (32N50BU1S) Symbol Test Conditions v CES Td = 25°C to 150°C V C3R T.J = 25°C to 150°C; RrF bb V eES V GEM


    OCR Scan     		PDF IXGH32N50BU1 IXGH32N50BU1S O-247 32N50BU1S)

    MJI-25

    Abstract: No abstract text available
    Text: □ IXYS P re lim in a ry D a ta S h e e t IXGH32N50BU1 IXGH32N50BU1S HiPerFAST IGBT with Diode Combi Pack V CES ^C25 V CE sat *fi TO-247 SMD (32N50BU1S) Symbol Test Conditions V CES T j = 25°C to 150°C 500 V v CGR T j = 25 °C to 150°C; RQE = 1 Mi2


    OCR Scan     		PDF IXGH32N50BU1 IXGH32N50BU1S O-247 32N50BU1S) MJI-25