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IXFN102N30P Price and Stock

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Littelfuse Inc IXFN102N30P MOSFET N-CH 300V 88A SOT227B
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXFN102N30P	Tube	288		1	1 $20.24 10 $18.034 100 $18.034 1000 $18.034 10000 $18.034	Buy Now
Newark	IXFN102N30P	Bulk			300	1 - 10 - 100 - 1000 $18.9 10000 $18.9	Buy Now
RS	IXFN102N30P	Bulk		8 Weeks	10	1 - 10 $27.89 100 $27.89 1000 $27.89 10000 $27.89	Get Quote
IXYS Corporation IXFN102N30P MOSFET Modules 102 Amps 300V 0.033 Rds
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	IXFN102N30P					1 - 10 - 100 - 1000 $18.03 10000 $18.03	Get Quote
Future Electronics	IXFN102N30P	Tube			300	1 - 10 $17.67 100 $17.67 1000 $17.67 10000 $17.67	Buy Now
	IXFN102N30P	Tube			200	1 - 10 - 100 - 1000 $19.14 10000 $19.14	Buy Now
TTI	IXFN102N30P	Tube			300	1 - 10 - 100 - 1000 $18.03 10000 $18.03	Buy Now
TME	IXFN102N30P				1	1 $31.07 10 $24.73 100 $24.73 1000 $24.73 10000 $24.73	Get Quote
New Advantage Corporation	IXFN102N30P		120		1	1 - 10 - 100 $44.74 1000 $41.76 10000 $41.76	Buy Now

IXFN102N30P Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
IXFN102N30P		IXYS	FETs - Modules, Discrete Semiconductor Products, MOSFET N-CH 300V 88A SOT227B		Original	PDF
IXFN102N30P		IXYS	PolarHT HiPerFET Power MOSFET		Original	PDF

IXFN102N30P Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
IXFN102N30P Abstract: No abstract text available Text: PolarHVTM HiPerFET IXFN 102N30P Power MOSFET VDSS ID25 N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode trr RDS on Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 300 300 V V VGS VGSM	Original	PDF	102N30P IXFN102N30P
Untitled Abstract: No abstract text available Text: PolarHVTM HiPerFET IXFN 102N30P Power MOSFET VDSS ID25 N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode trr RDS on Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 300 300 V V VGS VGSM	Original	PDF	102N30P
STW20N60 Abstract: 2n60p IXFB100N50 IXFB100N50P STW20N60FD IXFB100N50P TO-264 ixys ixfn100n50p IXFN48n60p IXFH30N60P ixfn100n50p Text: PolarHTTM 55V to 300V Standard Power MOSFETs Benefits of Polar HTTM and Polar HVTM This new “Polar” technology platform utilizes a patented proprietary cell design, as well as numerous process improvements that reduce RDS(on) by over 30% per unit area, while also reducing Qg by an equal	Original	PDF	O-220, ISOPLUS220TM, O-247, ISOPLUS247TM, O-264, ISOPLUS264TM. PLUS220 ISOPLUS220TM PLUS220SMD O-252 STW20N60 2n60p IXFB100N50 IXFB100N50P STW20N60FD IXFB100N50P TO-264 ixys ixfn100n50p IXFN48n60p IXFH30N60P ixfn100n50p
123B16 Abstract: 88 881 505 102N30P IXFN102N30P C8860 Text: Preliminary Technical Information PolarHVTM HiPerFET IXFN 102N30P Power MOSFET VDSS ID25 N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode trr RDS on Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ	Original	PDF	102N30P 405B2 123B16 88 881 505 102N30P IXFN102N30P C8860