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    IXFK90N20 Search Results

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    IXFK90N20 Price and Stock

    IXYS Corporation IXFK90N20

    MOSFET N-CH 200V 90A TO264AA
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    DigiKey IXFK90N20 Tube 25
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    IXYS Corporation IXFK90N20Q

    MOSFET N-CH 200V 90A TO264AA
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    DigiKey IXFK90N20Q Tube 25
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    Mouser Electronics IXFK90N20Q
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    Littelfuse Inc IXFK90N20Q

    Trans MOSFET N-CH 200V 90A 3-Pin(3+Tab) TO-264AA
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    Verical IXFK90N20Q 70 1
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    IXFK90N20 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXFK90N20 IXYS 200V HiPerFET power MOSFET Original PDF
    IXFK90N20 IXYS HiPerFET Power MOSFET Original PDF
    IXFK90N20Q IXYS 200V HiPerFET power MOSFET Q-class Original PDF
    IXFK90N20QS IXYS HiPerFET Power MOSFET Original PDF

    IXFK90N20 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TO264AA

    Abstract: IXFK90N20Q IXFK90N20QS TO-264-aa
    Text: ADVANCED TECHNICAL INFORMATION HiPerFETTM Power MOSFETs IXFK90N20Q IXFK90N20QS Q Class Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 200 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 200 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C


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    PDF IXFK90N20Q IXFK90N20QS O-264 O-264AA TO264AA IXFK90N20Q IXFK90N20QS TO-264-aa

    IRM-38

    Abstract: 100N20 106N20 IXFK90N20 90N20 IXFN100N20 IXFN106N20
    Text: HiPerFETTM Power MOSFETs VDSS N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr IXFK 90 N 20 IXFN 100 N 20 IXFN 106 N 20 ID25 RDS on 200 V 90 A 200 V 100 A 200 V 106 A trr £ 200 ns 23 mW 23 mW 20 mW TO-264 AA Symbol Test Conditions Maximum Ratings


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    PDF O-264 90N20 100N20 106N20 IXFN90N20 IXFN106N20 IRM-38 106N20 IXFK90N20 IXFN100N20 IXFN106N20

    fqp60n06

    Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640
    Text: MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL HITACHI ON-SEMI PHILIPS INFINEON SIEMENS TEMIC / VISHAY TOSHIBA IR IXYS ST Nearest Preferred Supplier


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    PDF STP7NB40 STT3PF30L STD20NE03L STP60NE03L-12 STP60NE03L-10 STP40NF03L STP80NE03L-06 STS4DPF30L fqp60n06 spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


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    PDF P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS

    irfb4115

    Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
    Text: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .


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    PDF element-14 F155-6A F155-10A F165-15A F175-25A irfb4115 BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor

    IRF1830G

    Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696
    Text: Power MOSFETs Cross-reference guide May 2005 www.st.com/pmos Contents 2 Alpha and Omega Semiconductor 3 AnalogicTech 3 Anpec 3 APEC 3 APT 4 AUK 4 Fairchild 4 Fuji 12 Hi-Sincerity 14 Hitachi 14 Infineon 14 IR 18 IXYS 22 Matsushita 23 Reneas 23 Motorola 23


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    PDF AO4405 AO4407 AO4408 AO4409 AO4410 AO4411 AO4413 AO4415 AO4422 AO4700 IRF1830G IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696

    IRF540 complementary

    Abstract: IRFZ44N complementary std2n52 TOSHIBA IRFZ44A datasheet STP2NA60 SSH6N80 rfp60n06 ste38na50 IRF630 complementary IRF3205 IR
    Text: Sales type RFP6N50 RFD16N03LSM RFP15N05L RFP50N05 RFP15N05 RFP50N05L RFD14N05L RFD14N05LSM RFD14N05SM RFP14N05L RFP25N05 RFP14N05 HUF75344P3 HUF75344S3S HUF75345S3S HUF75345G3 HUF75343S3S HUF75307D3S HUF75344G3 HUF75345P3 HUF75343P3 HUF5343G3 HUF75321P3 HUF75329P3


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    PDF RFP6N50 RFD16N03LSM RFP15N05L RFP50N05 RFP15N05 RFP50N05L RFD14N05L RFD14N05LSM RFD14N05SM RFP14N05L IRF540 complementary IRFZ44N complementary std2n52 TOSHIBA IRFZ44A datasheet STP2NA60 SSH6N80 rfp60n06 ste38na50 IRF630 complementary IRF3205 IR

    h bridge ups circuit schematic diagram

    Abstract: IXDP630 application note 3 phase ups schematic diagram resistors 1k ohm IXDP630 IXDP631 schematic diagram UPS ix6r11s3 SCHEMATIC POWER SUPPLY WITH IGBTS Panasonic ic "18-pin"
    Text: EV6R11 IX6R11 HALF BRIDGE DRIVER Evaluation Board Introduction Features • Single chip for driving high/low side MOSFETs / IGBTs • High to low side isolation of 600V • Common-mode dv/dt immunity of greater than 50V/nanosecond • Undervoltage lockout


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    PDF EV6R11 IX6R11 IXDP630 IXDP631 IXDD414 IXFK90N20Q 0A/200V h bridge ups circuit schematic diagram IXDP630 application note 3 phase ups schematic diagram resistors 1k ohm schematic diagram UPS ix6r11s3 SCHEMATIC POWER SUPPLY WITH IGBTS Panasonic ic "18-pin"

    sd 20n60

    Abstract: IXFX 44N80 20n80 60n60 9n80 C2625 power mosfet 100n20 IXFH32N50 230N10 8N80
    Text: HiPerFETTM F-Series HiPerFETTM Power MOSFETs with Fast Intrinsic Diode HiPerFETTM F-Series Contents VDSS max V ID cont RDS(on) TC = 25 °C TC = 25 °C Ω A TO-247 (IXFH) PLUS247 (IXFX) ISOPLUS247TM (IXFR) TO-268 (IXFT) TO-264 (IXFK) miniBLOC (IXFN) ä IXFT 80N06


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    PDF O-247 PLUS247 ISOPLUS247TM O-268 O-264 80N06-11 76N07-11 76N07-12 100N10 170N10 sd 20n60 IXFX 44N80 20n80 60n60 9n80 C2625 power mosfet 100n20 IXFH32N50 230N10 8N80

    SSH6N80

    Abstract: rfp60n06 IRF3205 IR BUK417-500AE SFP70N03 BUZ91A 2SK2717 STMicroelectronics BUZ22 IXFH13N50
    Text: Sales type BUZ10 BUZ11 BUZ11A BUZ71 BUZ71A BUZ72A BUZ80A IRF520 IRF530 IRF540 IRF620 IRF630 IRF640 IRF730 IRF740 IRF820 IRF830 IRF840 IRFBC30 IRFBC40 IRFZ40 MTP3055E STB10NA40 STB10NB20 STB10NB50 STB11NB40 STB15N25 STB16NB25 STB18N20 STB19NB20 STB30N10 STB36NE03L


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    PDF BUZ10 BUZ11 BUZ11A BUZ71 BUZ71A BUZ72A BUZ80A IRF520 IRF530 IRF540 SSH6N80 rfp60n06 IRF3205 IR BUK417-500AE SFP70N03 BUZ91A 2SK2717 STMicroelectronics BUZ22 IXFH13N50

    Untitled

    Abstract: No abstract text available
    Text: EV6R11 IX6R11 HALF BRIDGE DRIVER Evaluation Board Introduction Features • Single chip for driving high/low side MOSFETs / IGBTs • High to low side isolation of 600V • Common-mode dv/dt immunity of greater than 50V/nanosecond • Undervoltage lockout


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    PDF EV6R11 IX6R11 IXDP630 IXDP631 IXDD414 IXFK90N20Q 0A/200V

    74HC00

    Abstract: ixdp630 IXDP630 application note 3 phase ups schematic diagram make three phase ups schematic diagram IXDB4410 74HC00-1 IXBD4411PI 74hc00 oscillator circuit IXDD414
    Text: EVBD4400 HALF BRIDGE DRIVER Evaluation Board Features Introduction • High to low side isolation of 1000V • Common-mode dv/dt immunity of greater than 50V/nanosecond • On-chip generated negative gate drive • Overcurrent protection by means of desaturation


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    PDF EVBD4400 IXDP630 IXDP631 74HC00 74HC04 IXDP630 application note 3 phase ups schematic diagram make three phase ups schematic diagram IXDB4410 74HC00-1 IXBD4411PI 74hc00 oscillator circuit IXDD414

    TX02-4400PI

    Abstract: No abstract text available
    Text: EVBD4400 HALF BRIDGE DRIVER Evaluation Board Features Introduction • High to low side isolation of 1000V • Common-mode dv/dt immunity of greater than 50V/nanosecond • On-chip generated negative gate drive • Overcurrent protection by means of desaturation


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    PDF EVBD4400 IXDP630 74HC00 74HC04 IXFK90N20Q TX02-4400PI

    220v AC voltage stabilizer schematic diagram

    Abstract: LG color tv Circuit Diagram tda 9370 1000w inverter PURE SINE WAVE schematic diagram schematic diagram atx Power supply 500w TV SHARP IC TDA 9381 PS circuit diagram wireless spy camera 9744 mini mainboard v1.2 sony 279-87 transistor E 13005-2 superpro lx
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 AD9272 Analog Front End, iMEMS Accelerometers & Gyroscopes . . . . . . 782, 2583 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-528 Acceleration and Pressure Sensors . . . . . . . . . . . . . . . . . . . . . . . . . . Page 2585


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    PDF AD9272 P462-ND LNG295LFCP2U P463-ND LNG395MFTP5U 220v AC voltage stabilizer schematic diagram LG color tv Circuit Diagram tda 9370 1000w inverter PURE SINE WAVE schematic diagram schematic diagram atx Power supply 500w TV SHARP IC TDA 9381 PS circuit diagram wireless spy camera 9744 mini mainboard v1.2 sony 279-87 transistor E 13005-2 superpro lx

    IXFK100N20

    Abstract: 100N20 IXFK90N20
    Text: HiPerFETTM Power MOSFETs VDSS N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr IXFK 90 N 20 IXFN 100 N 20 IXFN 106 N 20 ID25 RDS on 200 V 90 A 200 V 100 A 200 V 106 A trr £ 200 ns 23 mW 23 mW 20 mW TO-264 AA Symbol Test Conditions Maximum Ratings


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    PDF O-264 90N20 100N20 106N20 bK100N20 IXFN90N20 IXFN106N20 IXFK100N20 IXFK90N20

    fqp60n06

    Abstract: SSH6N80 spb32N03l SMP60N03-10L SSP80N06A IRF540 application rfp60n06 fsd9933a 2SK790 IRFZ30
    Text: 电子元器件系列 wwww.rf-china.com RF-Micom co.,Ltd EMail:[email protected] Sale Phone:86-592-5713956 MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL


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    PDF STP7NB40 STT3PF30L STD20NE03L STP60NE03L-12 STP60NE03L-10 STP40NF03L STP80NE03L-06 STS4DPF30L fqp60n06 SSH6N80 spb32N03l SMP60N03-10L SSP80N06A IRF540 application rfp60n06 fsd9933a 2SK790 IRFZ30

    TO-264-aa

    Abstract: No abstract text available
    Text: HiPerFET Power MOSFETs IXFK90N20Q IXFK90N20QS Q C lass ID25 = 200 V = 90 A R = D SS DS on Sym bol Test Conditions Maxim um Ratings V OSS Tj = 25°C to 150°C 200 V VDGR Tj = 25°C to 150°C; R GS = 1 MQ 200 V Vos V GSM Continuous ±20 V Transient ±30


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    PDF IXFK90N20Q IXFK90N20QS O-264 O-264AA TO-264-aa

    Untitled

    Abstract: No abstract text available
    Text: □ IXYS HIPerFET IXFK90N20Q IXFK90N20QS Power MOSFETs V DSS ^D25 D DS on Q Class Symbol Test Conditions Maximum Ratings V DSS Td = 25°C to 150°C 200 V Td = 25°C to 150°C; RGS = 1 M£i 200 V VGS Continuous ±20 V V GSM Transient ±30 V DGR ^D25 Tc = 25°C


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    PDF IXFK90N20Q IXFK90N20QS O-264AA

    D2580

    Abstract: CHIP T 409 ES 106N20 IXFK90N20
    Text: □IXYS HiPerFET Power MOSFETs IXFK90N20 IXFN106 N20 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Test Conditions V DSS ^ vDQR Maximum Ratings IXFN IXFK = 25°C to 150°C 200 200 V Tj = 25°C to 150°C; RQS= 1 MQ 200 200 V VGS V tgsm


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    PDF IXFK90N20 IXFN106 O-264 OT-227 E153432 90N20 106N20 D2580 CHIP T 409 ES 106N20

    Untitled

    Abstract: No abstract text available
    Text: IPIXYS Advanced Technical Information IXFK 90N20Q IXFX 90N20Q HiPerFET Power MOSFETs Q Class = 200 V = 90 A DSS ^D25 P DS on * rr = 2 2 m ß < 200 ns N-Channel Enhancement Mode Avalanche Rated Low Qg High dv/dt,Low trr Symbol Test Conditions Maximum Ratings


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    PDF 90N20Q 90N20Q to150 O-264AA PLUS247TM

    6 r 360

    Abstract: 106N20 100n20 IXFK90N20
    Text: HHXYS VDSS HiPerFET Power MOSFETs IXFK 90N20 IXFN 100N20 IXFN 106N20 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr 200 V 200 V 200 V p ^D25 DS on 90 A 23 mQ 100 A 23 mQ 106 A 20 mß t„ ^200 ns TO-264 AA (IXFK) Symbol Test Conditions


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    PDF IXFK90N20 IXFN100N20 IXFN106N20 O-264 90N20 100N20 106N20 Cto150 50Drain 6 r 360

    ixys ixfn 55n50

    Abstract: 170n10 C1106 IXFH26N50 c1124 IXFN170N10 c1120 15N100 76N06 IXFN36n60
    Text: i , i - •*.*• - f _ _ , ; . ' x' r < r • Z* i't- y V ' -_ « i W^ | Contents V DSS max ^Otfcont Tc = 2 5 “C □ DS<ön) Tc = 25 °C V A il 60 76 0.011 0.012 200 0.006 76 0.011 0.012 200 0.006 67 75 0.025 0.02 150 0.012 170 0.01


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    PDF O-247 O-247 T0-204 O-264 O-264 76N06-11 75N06-12 110N06 76N07-11 76N07-12 ixys ixfn 55n50 170n10 C1106 IXFH26N50 c1124 IXFN170N10 c1120 15N100 76N06 IXFN36n60

    30n50 mosfet

    Abstract: DSE119-06AS VM0400-02F MCC SMD DIODE 300-06DA smd43 35-06AS 500-06DA 250-12DA mosfet p channel
    Text: Contents Insulated Gate Bipolar Transistors IGBT Package style vCES Tc = 2S°C 2. TO-247 SMD 1a. TO-263AA 2a. TO-247 SMD Page A V 1 600 20 48 3.0 2.7 3 600 60 2.5 2 600 75 2.7 1 600 20 20 2.5 3.0 600 48 60 60 2.7 2.9 2.5 600 16 25 16 2.5 600 48 2.7 7 600


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    PDF O-263 O-263AA O-247 IXGA10N60A IXGA24N60A IXGH32N60B IXGH50N60AS IXGA10N60U1 30n50 mosfet DSE119-06AS VM0400-02F MCC SMD DIODE 300-06DA smd43 35-06AS 500-06DA 250-12DA mosfet p channel

    100N20

    Abstract: t 227 fk90 ax2002 t227 106N20 IXFK90N20
    Text: p V DSS HiPerFET Power MOSFETs ix f k 90 n 20 IXFN100 N 20 IXFN106N20 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low t ^D25 200 V 90 A 100 A 200 V 200 V 106 A trr < 200 ns DS on 23 mû 23 mQ 20 m£2 TO -264 A A (IXFK) Sym bol Test C onditions


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    PDF IXFN100 IXFN106N20 90N20 100N20 106N20 T-227 90N20 IXFN100N20 106N20 t 227 fk90 ax2002 t227 IXFK90N20