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    IXBH20 Search Results

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    IXBH20 Price and Stock

    IXYS Corporation IXBH20N360HV

    IGBT 3600V 70A TO247HV
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXBH20N360HV Tube 829 1
    • 1 $105.03
    • 10 $105.03
    • 100 $105.03
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    Mouser Electronics IXBH20N360HV 190
    • 1 $105.03
    • 10 $105.03
    • 100 $105.02
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    IXYS Corporation IXBH20N300

    IGBT 3000V 50A TO247AD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXBH20N300 Tube 624 1
    • 1 $30.5
    • 10 $30.5
    • 100 $30.08567
    • 1000 $30.08567
    • 10000 $30.08567
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    Mouser Electronics IXBH20N300 399
    • 1 $30.09
    • 10 $30.09
    • 100 $30.08
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    TME IXBH20N300 1
    • 1 $46.88
    • 10 $37.27
    • 100 $34.73
    • 1000 $34.73
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    New Advantage Corporation IXBH20N300 153 1
    • 1 -
    • 10 -
    • 100 $70.02
    • 1000 $65.35
    • 10000 $65.35
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    Littelfuse Inc IXBH20N360HV

    Trans IGBT Chip N-CH 900V 165A 830000mW 3-Pin(3+Tab) TO-247
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    Verical IXBH20N360HV 210 30
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    • 100 $102.57
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    Arrow Electronics IXBH20N360HV 210 44 Weeks 30
    • 1 -
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    • 100 $102.57
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    Newark IXBH20N360HV Bulk 1
    • 1 $111.29
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    RS IXBH20N360HV Bulk 8 Weeks 30
    • 1 -
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    • 100 $162.45
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    Littelfuse Inc IXBH20N300

    Transistor, 3Kv, 50A, To-247 Rohs Compliant: Yes |Littelfuse IXBH20N300
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark IXBH20N300 Bulk 322 1
    • 1 $34.83
    • 10 $32.36
    • 100 $29.74
    • 1000 $29.74
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    RS IXBH20N300 Bulk 8 Weeks 30
    • 1 -
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    • 100 $46.53
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    ACTIVE COMPNTS/DIODES IXBH20N360HV

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    Bisco Industries IXBH20N360HV 6
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    IXBH20 Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXBH20N140 IXYS 1400V high voltage BIMOSFET monolithic bipolar MOS transistor Original PDF
    IXBH 20N140 IXYS TRANS IGBT CHIP N-CH 1400V 20A 3TO-247 AD Original PDF
    IXBH20N160 IXYS 1600V high voltage BIMOSFET monolithic bipolar MOS transistor Original PDF
    IXBH 20N160 IXYS TRANS IGBT CHIP N-CH 1600V 20A 3TO-247 AD Original PDF
    IXBH20N300 IXYS IGBTs - Single, Discrete Semiconductor Products, IGBT 3000V 50A 250W TO247 Original PDF
    IXBH20N360HV IXYS Discrete Semiconductor Products - Transistors - IGBTs - Single - IGBT 3600V 70A TO-247HV Original PDF

    IXBH20 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor VCES = 3000V IC110 = 20A VCE sat ≤ 3.2V IXBH20N300 IXBT20N300 TO-247 (IXBH) Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 3000 V VCGR


    Original     		PDF IC110 IXBH20N300 IXBT20N300 O-247 20N300

    IXBH20N300

    Abstract: 20N30 B20N30
    Text: Preliminary Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBH20N300 IXBT20N300 VCES = 3000V IC110 = 20A VCE sat ≤ 3.2V TO-247 (IXBH) Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 3000 V VCGR


    Original     		PDF IXBH20N300 IXBT20N300 IC110 O-247 20N300 IXBH20N300 20N30 B20N30

    20A400

    Abstract: IXBH20N300 IXBT20N300
    Text: High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBH20N300 IXBT20N300 VCES = 3000V IC110 = 20A VCE sat ≤ 3.2V TO-268 (IXBT) G Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 3000 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ


    Original     		PDF IXBH20N300 IXBT20N300 IC110 O-268 IC110 O-247 20N300 20A400 IXBT20N300

    IXGF30N400

    Abstract: IXGF4N400 IXGF25N250 pulser isoplus IXGF54N400 Discrete IGBTS IXTH1N250 IXBX64N250 IXGT25N250
    Text: IXYSPOWER P R O D U C T B R I E F Efficiency Through Technology Very High Voltage Discrete Portfolio From the recognized industry leader for discrete semiconductor products above 2500V august 2009 OVERVIEW As the new “Green-World Economy” unfolds, Design Engineers


    Original     		PDF O-264 IXBX55N300 PLUS247 IXBF55N300 O-268 O-247 IXGF30N400 IXGF4N400 IXGF25N250 pulser isoplus IXGF54N400 Discrete IGBTS IXTH1N250 IXBX64N250 IXGT25N250

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


    Original     		PDF P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS

    20N160

    Abstract: crt flyback
    Text: High Voltage BIMOSFETTM Monolithic Bipolar MOS Transistor IXBH 20N140 IXBH 20N160 VCES IC25 VCE sat tfi N-Channel, Enhancement Mode C = = = = 1400/1600 V 20 A 4.7 V typ. 40 ns TO-247 AD G G C E C (TAB) E G = Gate, E = Emitter, Symbol Conditions Maximum Ratings


    Original     		PDF 20N140 20N160 O-247 IXBH20 20N160 crt flyback

    IXBK55N300

    Abstract: IXBF55N300 IXBH32N300 BiMOSFET radar system with circuit diagram IXBH20N300 IXBH12N300 bimos high speed bridge rectifier IXBH2N250
    Text: POWER Efficiency Through Technology N E W PR O D U C T BR I E F High Voltage BiMOSFETsTM IXYS expands its bimosfet tm porTfolio to 3kv with the introduction of its new hv bimosfetsTM september 2009 OVERVIEW IXYS High Voltage BiMOSFETsTM are a unique class of high gain devices featuring blocking


    Original     		PDF E153432) com/IXAN0022 IXBK55N300 IXBF55N300 IXBH32N300 BiMOSFET radar system with circuit diagram IXBH20N300 IXBH12N300 bimos high speed bridge rectifier IXBH2N250

    20N160

    Abstract: 20N140
    Text: High Voltage BIMOSFETTM Monolithic Bipolar MOS Transistor IXBH 20N140 IXBH 20N160 VCES IC25 VCE sat tfi N-Channel, Enhancement Mode C = = = = 1400/1600 V 20 A 4.7 V typ. 40 ns TO-247 AD G G C E C (TAB) E G = Gate, E = Emitter, Symbol Conditions Maximum Ratings


    Original     		PDF 20N140 20N160 O-247 20N160 IXBH20