GM71C4400BJ
Abstract: GM71C4400 gm71c4400b
Text: @ LG Semicon. Co. LTD Description Features The GMM781100BNS is an 1M x 8 bits Dynamic RAM Module which is assembled 2 pieces of 4M bit DRAM GM71C4400BJ, 1M x 4 sealed in 20 pin SOJ package. The GMM781100BNS is a socket type memory module, suitable for easy change or addition
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GMM781100BNS
GM71C4400BJ,
GMM781100BNS
GM71C4400B
GMM7811OOBNS-60
GMM781100BNS-70
GMM781100BNS-80
88888888fo
GM71C4400BJ
GM71C4400
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itt taa capacitors
Abstract: No abstract text available
Text: • ■ M » ■ i n V IDT7MP4120 1 M x 32 C M 0S STATIC RAM MODULE T FEATURES DESCRIPTION • High-density 4MB Static RAM module • Low profile 72-pin ZIP Zig-zag In-line vertical Package or 72-pin SIMM (Single In-line Memory Module) • Fast access time: 15ns (max.)
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IDT7MP4120
72-pin
IDT7MP4120
itt taa capacitors
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MC-424000A8FA-60
Abstract: No abstract text available
Text: DATA SHEET NEC / MOS INTEGRATED CIRCUIT / MC-424000A8 SERIES 4M-WORD BY 8-BIT DYNAMIC RAM MODULE FAST PAGE MODE Description The MC-424000A8 is a 4 194 304 w ords by 8 bits dynamic RAM m odule on which 8 pieces o f 4M DRAM </iPD424100 are assembled. This m odule provides high density and large quantities o f m em ory in a small space w ith o u t utilizing the
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MC-424000A8
uPD424100
MC-424QQQA8-60
MC-424000A8-70
MC-424000A8-80
MC-424000A8-10
MC-424000A8BA,
424000A8FA
MC-424000A8FA-60
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Untitled
Abstract: No abstract text available
Text: 256K x 32 CMOS STATIC RAM MODULE IDT7MP4045 IDT7MP4145 Integrated D evice Technology, Inc. DESCRIPTION: • High density 1 m egabyte static RAM module IDT7M P4145 upgradeable to 4 megabyte, IDT7MP4120 • Low profile 64 pin ZIP (Zig-zag In-line vertical Package)
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IDT7MP4045
IDT7MP4145
P4145
IDT7MP4120)
P4045
P4145
IDT7MP4045/4145
QQ21233
IDT7MP4045/7MP4145
7MP4145
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Untitled
Abstract: No abstract text available
Text: LIE D • bEMTf l SS 0 0 2 D5 MS 3 m M MITSUBISHI H 2 M ■ M IT I 3 2 E J MITSUBISHI LSIs , S E J - 6 , - 7 , - 8 , - 1 PI Ef lORY/ASI C FAST PAGE MODE 2097152-WORD BY 32-BIT DYNAMIC RAM DESCRIPTION The M H 2M 32E J, SEJ is 2 0 9 7 1 5 2 w ord x 3 2 b it dynamic
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2097152-WORD
32-BIT
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Untitled
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC b?E D • 7 ^ 4 1 4 2 QG15431 Ô4S KM41C1001C CM OS DRAM 1 M x 1 Bit CMOS Dynamic RAM with Nibble Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM41C1001C is a CMOS high speed 1,048,576x1 Dynamic Random Access Memory. Its
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QG15431
KM41C1001C
KM41C1001C
576x1
KM41C1001C-6
110ns
KM41C1001C-7
130ns
KM41C1001C-8
150ns
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D-85540
Abstract: HM5116400ATS
Text: HB56T432D Series 4,194,304-Word x 32-Bit High Density Dynamic RAM Module HITACHI The HB56T432D is a 4M x 32 dynamic R A M Small Outline D IM M S .O .D IM M , mounted 8 pieces of 16-Mbit D R A M (HM5116400ATS) sealed in TSOP package. An outline of the HB56T432D is 72-pin Zig Zag
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HB56T432D
304-Word
32-Bit
16-Mbit
HM5116400ATS)
72-pin
D-85540
HM5116400ATS
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Untitled
Abstract: No abstract text available
Text: HB56TW432D Series 4,194,304-Word x 32-Bit High Density Dynamic RAM Module HITACHI The HB56TW432D is a 4M x 32 dynamic RAM Small Outline DIMM S.O.DIMM , mounted 8 pieces of 16-Mbit DRAM (HM51W16400ATS) sealed in TSOP package. An outline of the HB56TW432D is 72-pin Zig Zag
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HB56TW432D
304-Word
32-Bit
16-Mbit
HM51W16400ATS)
72-pin
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Untitled
Abstract: No abstract text available
Text: 1 Megabit CMOS SRAM PENSE-PAC MICROSYSTEMS DPS3232V D E SC R IP TIO N : The D PS3232V is a 66-pin Pin Grid Array PGA consisting of four 32K x 8 SRAM devices in ceramic L C C packages surface mounted on a co-fired ceramic substratewith matching thermal coefficients. The LCCs
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DPS3232V
66-pin
128Kx32
256Kx32,
30A014-10
DD0121fl
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SH 6770
Abstract: MC-428000A36 1J250
Text: N E C ELECTRONICS INC b lE ]> • b4S7SES 0G34434 NEC Electronics Inc. Description Pin Configuration The MC-428000A36 is a fast-page dynamic RAM mod ule organized as 8,388,608 words by 36 bits and de signed to operate from a single +5-volt power supply.
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0G34434
MC-428000A36
36-Bit
b4B7S25
003444b
MC-428000A36
0428000A36BH
1J250
IPD4217400LE
SH 6770
1J250
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SIMM 30-pin
Abstract: TM497GU8 30-pin simm memory TMS417400 TMS417400DJ
Text: TM497GU8 4194394-WORD BY 8-BIT DYNAMIC RAM MODULE S M M S498-A PR IL 1994 Organization . . . 4194304 x 8 U SINGLE-IN-LINE PACKAGE TOP VIEW Single 5-V Power Supply (±10% Tolerance) 30-Pin Single-In-Line Memory Module (SIMM) for Use With Sockets VCC CAS DQ1
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TM497GU8
4194394-WORD
SMMS498-APRIL
30-Pin
16-Megabit
497GU8-60
497GU8-70
497GU8-80
R-PSIP-N30
SIMM 30-pin
30-pin simm memory
TMS417400
TMS417400DJ
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Intronic
Abstract: No abstract text available
Text: HB56TW132D-6BL/7BL/8BL 1,048,576-Word X 32-Bit High Density Dynamic RAM Module HITACHI The HB56TW 132D is a 1M x 32 dynamic RAM Sm all O utline D IM M S.O .D IM M , mounted 8 p ieces o f 4-M b it DR AM (H M 51W 4400B LTT ) sealed in TSOP package. An outline of the HB56TW132D is 72-pin Zig Zag
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HB56TW132D-6BL/7BL/8BL
576-Word
32-Bit
HB56TW
4400B
HB56TW132D
72-pin
72-pin)
Intronic
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aeg diode Si 61 L
Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
Text: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books
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11tA0A12
A025A
A0290
U0U55
A0291
A0292
A0305
A0306
A0A56
A0A59
aeg diode Si 61 L
aeg diodes D6
SGS Transistors
BC23B
SILICONIX U315
MZ306
BY126
bcv59
ac128
2N3680
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Untitled
Abstract: No abstract text available
Text: m i X2816C 16K 2048 x 8 Bit 5 Volt, Byte Alterable E2PROM FEATURES DESCRIPTION • 90ns Access Time • Simple Byte and Page Write — Single 5V Supply — No External High Voltages or Vpp Control Circuits — Self-Timed — No Erase Before Write — No Complex Programming Algorithms
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X2816C
640ms
300us
G0D457Ã
120ns
150ns
200ns
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Untitled
Abstract: No abstract text available
Text: Prelim inary HB56D236BW/SBW-6B/7B/8B 2,097,152-Word x 36-Bit High D ensity D ynam ic RAM M odule Rev.O Dec.20. 1993 HITACHI The IIB 5 6 D 2 3 6 is a 2M X 36 d yn am ic R A M module, mounted 16 pieces of 4 M b it D R A M H M 5 1 4 4 0 0 BS sealed in S O J package and 4
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HB56D236BW/SBW-6B/7B/8B
152-Word
36-Bit
72-pin
HB56D23s
294/50/Klnkos/MFM
M11T226
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RCA SK CROSS-REFERENCE
Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
Text: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered
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514400B
Abstract: No abstract text available
Text: Prelim inary H B 5 6 D 1 3 6B W /S B W -6B /7B /8B 1 ,0 4 8 ,5 7 6 -W o r d x 3 6 -B it H ig h D e n s ity D y n a m ic R A M M o d u le Rev.O Dec.20 .19 93 HITACHI T h e H B 56D 136 is a 1M X 36 d y n a m ic RAM m odule, m ounted 8 pieces of 4M bit DRAM H M 514400B S sealed in SO J package and 2
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514400B
HM512200BS
IB56D13G
72-pin
HB56D136
294/50/Kinkos/MFM
M11T227
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Untitled
Abstract: No abstract text available
Text: >pec. MITSUBISHI LSIs Specifications subject to • ■ ■ ■ _» m mi m ■ m m m m a MH16V7245AWJ -5, -6 _ HYPER PAGE MODE 1207959552 - BIT 16777216 - WORD BY 72 - BIT DYNAMIC RAM DESCRIPTION PIN CONFIGURATION The MH16V7245AWJ is 16777216-word x 72-bit dynamic
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MH16V7245AWJ
16777216-word
72-bit
MIT-DS-0099-0
26/Feb
y1997
26/Feb
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Untitled
Abstract: No abstract text available
Text: SIEMENS 16M X 72-Bit Dynamic RAM Module ECC - Module HYM 72V1620GS-50/-60 HYM 72V1630GS-50/-60 Preliminary Information • 168 Pin JEDEC Standard, Buffered 8 Byte Dual In-Line Memory Module • 1 bank 16 M x 72 organisation • Optimized for ECC applications
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72-Bit
72V1620GS-50/-60
72V1630GS-50/-60
fl23Sb05
72V1620/30GS-50/-60
72-ECC
0235b05
fl23SbOS
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ETR1 TIMERS
Abstract: OTI-037 taa 765a 765A LC43 8253 programme able interface ic 4060 pin diagram OTI-032 mark 1AM oti037
Text: OAK TECHNOLOGY INC. OTI-033 IBM PS/2 MODEL 30-COMPATIBLE FLOPPY DISK CONTROLLER AND DATA SEPARATOR FEATURES • Provides a 765A-com patible floppy disk controller • Contains a precision analog data separator • Integrates an internal phase com para
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QTI-033
30-COMPATIBLE
65A-compatible
-250K
-300K
-500K
OTl-033
OTI-O31
OTI-032
ETR1 TIMERS
OTI-037
taa 765a
765A
LC43
8253 programme able interface
ic 4060 pin diagram
mark 1AM
oti037
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Hall Siemens
Abstract: HYB51471B MARKING AOH
Text: H Ÿ B b141 fiu J /H Ü L - 5 0 fM i ü /i - /U r 2 5 6 k x i 6 - s i t D y n a m ic R A M i M r ñ n n y i a • M r u n i v i M M Ö K X 1Ö B T I t w i u t t i â k i l u i M m n U Y N A iy ïlU u a t c i n |V !t!V !U h |t5 Íy H u n Vp wr w< ■ h■9r i■n
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514171BJ/BJL
256kx16
256kx
HYB51471B
5t4171BJ/BJL
CDAC19400-H/Ag
Hall Siemens
MARKING AOH
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Untitled
Abstract: No abstract text available
Text: HB56SW872ES-6/7 8,388,608-word x 72-bit High Density Dynamic RAM Module HITACHI ADE-203-765A Z Rev. 1.0 Apr. 4, 1997 Description The HB56SW872ES belongs to 8 Byte DIMM (Dual In-line Memory Module) family, and has been developed as an optimized main memory solution for 4 and 8 Byte processor applications. The
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HB56SW872ES-6/7
608-word
72-bit
ADE-203-765A
HB56SW872ES
HB56SW
872ES
16-Mbit
HM51W16405)
16-bit
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JRC 45600
Abstract: YD 803 SGS 45600 JRC TDA 7277 TDA 5072 krp power source sps 6360 2904 JRC Sony SHA T90 SA philips HFE 4541
Text: I SEMICON INDEXES Contents and Introduction Manufacturers' Information V O LU M E 3 INTERNATIONAL INTEGRATED CIRCUITS INDEX 15th EDITION 1997 Numerical Listing of Integrated Circuits Substitution Guide U D C 621.382.3 Diagram s THE S E M IC O N INTERNATIONAL INDEXES
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ZOP033
ZOP035
ZOP036
ZOP037
ZOP038
ZOP039
ZOP045
ZOP042
ZOP041
ZOP043
JRC 45600
YD 803 SGS
45600 JRC
TDA 7277
TDA 5072
krp power source sps 6360
2904 JRC
Sony
SHA T90 SA
philips HFE 4541
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Untitled
Abstract: No abstract text available
Text: XRD9815 3-Channel 12-Bit Linear CCD & CIS Sensor Signal Processors September 1999-3 FEATURES • Internal Voltage Reference Triple-Channel, 4 Mega Pixels Per Second CCD Color Scan Mode • 5V Operation and 3V I/O Compatibility • Low Power CMOS: 500mW @ 5V
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XRD9815
12-Bit
500mW
32-Pin
3422L1S
3425blÃ
001417S
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