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    ITH13F06P

    Abstract: NC405C
    Text: MITEL ITH13F06 High Frequency Powerline N-Channel IGBT SEMICONDUCTOR Supsedes O ctober 1999, version DS4989-2.3 DS4989-3.0 May 1999 Key Parameters T h e IT H 1 3 F 0 6 is a v e ry r o b u s t n -c h a n n e l, e n h a n c e m e n t m ode in su la te d gate b ip o la r tra n s is to r


    OCR Scan     		PDF DS4989-2 ITH13F06 DS4989-3 May1999 ITH13F06P NC405C

    ITH13F06

    Abstract: No abstract text available
    Text: ITH13F06 M ITEL Powerline N-Channel IGBT S E M IC O N D U C T O R A dvance Inform ation DS4989-2.3 O ctober 1998 T h e IT H 1 3 F 0 6 is a v e ry r o b u s t n -c h a n n e l, e n h a n c e m e n t m ode in su la te d gate b ip o la r tra n s is to r IGBT designed fo r low pow er dissipation in a w ide range


    OCR Scan     		PDF ITH13F06 DS4989-2 ITH13F06

    ITH13F06B

    Abstract: C25 diode ITH13F06
    Text: ITH13F06 M ITEL Powerline N-Channel IGBT S E M IC O N D U C T O R A dvance Inform ation DS4989-2.3 O ctober 1998 T h e IT H 1 3 F 0 6 is a v e ry ro b u s t n -c h a n n e l, enhancem ent mode insulated gate bipolar transistor IGBT designed for low power dissipation in a wide range


    OCR Scan     		PDF ITH13F06 DS4989-2 ITH13F06 ITH13F06B C25 diode