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Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: Ordering number : EN8586A 2SJ661 P-Channel Power MOSFET http://onsemi.com –60V, –38A, 39mΩ, TO-262-3L/TO-263-2L Features • • ON-resistance RDS on 1=29.5mΩ(typ.) 4V drive • Input capacitance Ciss=4360pF (typ.) Specifications Absolute Maximum Ratings at Ta=25°C	Original	PDF	EN8586A 2SJ661 O-262-3L/TO-263-2L 4360pF
2SJ665 Abstract: No abstract text available Text: 2SJ665 Ordering number : EN8590 P-Channel Silicon MOSFET 2SJ665 General-Purpose Switching Device Applications Features • • • • • Low ON-resistance. Ultrahigh-speed switching. 4V drive. Motor drive, DC / DC converter. Avalanche resistance guarantee.	Original	PDF	2SJ665 EN8590 2SJ665
2SJ661 Abstract: No abstract text available Text: 2SJ661 Ordering number : EN8586 P-Channel Silicon MOSFET 2SJ661 General-Purpose Switching Device Applications Features • • • • • Low ON-resistance. Ultrahigh-speed switching. 4V drive. Motor drive, DC / DC converter. Avalanche resistance guarantee.	Original	PDF	2SJ661 EN8586 2SJ661
2SJ661 Abstract: D100003 Text: 2SJ661 注文コード No. N 8 5 8 6 三洋半導体データシート N 2SJ661 P チャネル MOS 型シリコン電界効果トランジスタ汎用スイッチングデバイス特長・低オン抵抗。・超高速スイッチング。・4V 駆動。	Original	PDF	2SJ661 IT08757 IT08756 --38A --152A IT08735 IT08758 2SJ661 D100003
Untitled Abstract: No abstract text available Text: 2SJ661 Ordering number : EN8586A SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET 2SJ661 General-Purpose Switching Device Applications Features • • ON-resistance RDS on 1=29.5mΩ(typ.) 4V drive • Input capacitance Ciss=4360pF (typ.) Specifications	Original	PDF	2SJ661 EN8586A 4360pF
Untitled Abstract: No abstract text available Text: 2SJ665 Ordering number : EN8590A SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET 2SJ665 General-Purpose Switching Device Applications Features • • ON-resistance RDS on 1=59mΩ(typ.) 4V drive Input capacitance Ciss=4200pF (typ.) • Specifications	Original	PDF	2SJ665 EN8590A 4200pF
J665 Abstract: 75350-01 Text: 2SJ665 Ordering number : EN8590A SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET 2SJ665 General-Purpose Switching Device Applications Features • • ON-resistance RDS on 1=59mΩ(typ.) 4V drive Input capacitance Ciss=4200pF (typ.) • Specifications	Original	PDF	EN8590A 2SJ665 4200pF PW10s, --30V, --27A J665 75350-01
Untitled Abstract: No abstract text available Text: Ordering number : EN8590A 2SJ665 P-Channel Power MOSFET http://onsemi.com –100V, –27A, 77mΩ, TO-263-2L Features • • ON-resistance RDS on 1=59mΩ(typ.) 4V drive • Input capacitance Ciss=4200pF (typ.) Specifications Absolute Maximum Ratings at Ta=25°C	Original	PDF	EN8590A 2SJ665 O-263-2L 4200pF PW10s, --30V, --27A L100H,