SCH2301
Abstract: No abstract text available
Text: SCH2301 Ordering number : EN8974 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET SCH2301 General-Purpose Switching Device Applications Features • • • • • The SCH2301 incorporates two elements in the same package which are P-channel MOSFETs, thereby enabling
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SCH2301
EN8974
SCH2301
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3LP03M
Abstract: TYP300V
Text: 3LP03M 注文コード No. N 8 1 5 4 3LP03M P チャネル MOS 形シリコン電界効果トランジスタ 汎用スイッチングデバイス 特長 ・低オン抵抗。 ・高速スイッチング。 ・2.5V 駆動。 ・高静電耐量 TYP300V [ゲート・ソース間保護用片側 Di 内蔵]。
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3LP03M
TYP300V)
120mA
120mA,
IT07659
--10V
--15V
IT08164
IT08166
3LP03M
TYP300V
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MCH6629
Abstract: D1306 TYP300V
Text: MCH6629 注文コード No. N 8 2 3 9 A 三洋半導体データシート 半導体ニューズ No.N8239 をさしかえてください。 MCH6629 P チャネル MOS 型シリコン電界効果トランジスタ 汎用スイッチングデバイス 特長
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MCH6629
N8239
TYP300V)
900mm2
IT08166
IT09251
IT09252
IT09253
MCH6629
D1306
TYP300V
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SCH2301
Abstract: TYP300V
Text: SCH2301 注文コード No. N 8 9 7 4 三洋半導体データシート N SCH2301 P チャネル MOS 型シリコン電界効果トランジスタ 汎用スイッチングデバイス 特長 ・MOS 型電界効果トランジスタを 1 パッケージに 2 素子内蔵した複合タイプであり高密度実装が可能である。
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SCH2301
TYP300V)
900mm2
IT08166
IT08165
900mm2
IT08470
IT08471
SCH2301
TYP300V
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MCH6634
Abstract: No abstract text available
Text: MCH6634 Ordering number : ENN8229 N-Channel and P-Channel Silicon MOSFETs MCH6634 General-Purpose Switching Device Applications Features • • • • The MCH6634 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance and ultrahigh-speed switching, thereby enabling high-density mounting.
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MCH6634
ENN8229
MCH6634
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3LP03SS
Abstract: No abstract text available
Text: 3LP03SS Ordering number : EN8649 P-Channel Silicon MOSFET 3LP03SS General-Purpose Switching Device Applications Features • • • • Low ON-resistance. High-speed switching. 2.5V drive. High resistance to damage from ESD TYP 300V [with a protection diode connected between the gate and source].
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3LP03SS
EN8649
3LP03SS
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3LP03S
Abstract: A00104
Text: 3LP03S Ordering number : ENA0010 P-Channel Silicon MOSFET 3LP03S General-Purpose Switching Device Applications Features • • • • Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. High ESD Voltage TYP 300V [Built-in one side diode for protection between Gate-to-Source].
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3LP03S
ENA0010
A0010-4/4
3LP03S
A00104
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MCH3335
Abstract: TA-3782
Text: MCH3335 注文コード No. N 8 2 2 8 三洋半導体データシート N MCH3335 P チャネル MOS 形シリコン電界効果トランジスタ 汎用スイッチングデバイス 特長 ・低オン抵抗。 ・超高速スイッチング。 ・2.5V 駆動。
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MCH3335
900mm2
--400mA
--15V
900mm2
IT09254
IT09255
MCH3335
TA-3782
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MCH3335
Abstract: MCH5810 SBS011
Text: MCH5810 Ordering number : ENN8194 MCH5810 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode DC / DC Converter Applications Features • • • Composite type with a P-Channel Sillicon MOSFET MCH3335 and a Schottky Barrier Diode (SBS011) contained in one package facilitating high-density mounting.
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MCH5810
ENN8194
MCH3335)
SBS011)
MCH3335
MCH5810
SBS011
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CPH6610
Abstract: MCH3335 CPH6610 marking
Text: CPH6610 Ordering number : ENN8167 CPH6610 N-Channel and P-Channel Silicon MOSFETs Load Switching Applications Features • • The CPH6610 incorporates a P-channel MOSFET MCH3335 and an N-channel MOSFET that feature low ON-resistance and ultrahigh-speed switching, thereby enabling high-density mounting.
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CPH6610
ENN8167
CPH6610
MCH3335)
MCH3335
CPH6610 marking
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SCH2601
Abstract: No abstract text available
Text: SCH2601 Ordering number : ENN8329 N-Channel and P-Channel Silicon MOSFETs SCH2601 General-Purpose Switching Device Applications Features • • • • • The SCH2601 incorporates two elements in the same package which are N-channel MOSFETs, thereby enabling
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SCH2601
ENN8329
SCH2601
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Untitled
Abstract: No abstract text available
Text: 3LP03M Ordering number : ENN8154 P-Channel Silicon MOSFET 3LP03M General-Purpose Switching Device Applications Features • • • • Low ON-resistance. High-speed switching. 2.5V drive. High ESD Voltage TYP 300V [Built-in one side diode for protection between Gate-to-Source].
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3LP03M
ENN8154
3LP03M/D
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MCH6629
Abstract: 8239 D1306
Text: MCH6629 Ordering number : EN8239A SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET MCH6629 General-Purpose Switching Device Applications Features • • • • • Low ON-resistance. Ultrahigh-speed switching. 1.5V drive. High ESD voltage TYP 300V
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MCH6629
EN8239A
MCH6629
8239
D1306
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MCH6629
Abstract: 8239 D1306
Text: MCH6629 Ordering number : EN8239A SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET MCH6629 General-Purpose Switching Device Applications Features • • • • • Low ON-resistance. Ultrahigh-speed switching. 1.5V drive. High ESD voltage TYP 300V
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MCH6629
EN8239A
MCH6629
8239
D1306
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MCH6634
Abstract: TYP300V
Text: MCH6634 注文コード No. N 8 2 2 9 A 三洋半導体データシート 半導体ニューズ No.N8229 とさしかえてください。 MCH6634 N チャネルおよび P チャネル MOS 型シリコン電界効果トランジスタ 汎用スイッチングデバイス
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MCH6634
N8229
TYP300V)
900mm2
350mA
350mA,
200mA,
900mm2
IT09238
MCH6634
TYP300V
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CPH6610
Abstract: MCH3335 MCH3408
Text: CPH6610 注文コード No. N 8 1 6 7 三洋半導体データシート N CPH6610 N チャネルおよび P チャネル MOS 形シリコン電界効果トランジスタ ロードスイッチング用 特長 ・低オン抵抗超高速スイッチングの P チャネル MCH3335 および N チャネル MOS 形電界効果トランジスタ
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CPH6610
MCH3335)
MCH3408)
900mm2
700mA
700mA,
400mA,
IT08165
900mm2
CPH6610
MCH3335
MCH3408
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SCH2601
Abstract: TYP300V
Text: SCH2601 注文コード No. N 8 3 2 9 三洋半導体データシート N SCH2601 N チャネルおよび P チャネル MOS 型シリコン電界効果トランジスタ 汎用スイッチングデバイス 特長 ・MOS 型電界効果トランジスタを 1 パッケージに 2 素子内蔵した複合タイプであり高密度実装が可能である。
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SCH2601
TYP300V
900mm2
350mA
350mA,
200mA,
IT08166
900mm2
IT09569
SCH2601
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MCH3335
Abstract: marking yl
Text: MCH3335 Ordering number : ENN8228 P-Channel Silicon MOSFET MCH3335 General-Purpose Switching Device Applications Features • • • Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol
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MCH3335
ENN8228
900mm2
MCH3335
marking yl
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Untitled
Abstract: No abstract text available
Text: MCH6634 Ordering number : EN8229A N-Channel and P-Channel Silicon MOSFETs MCH6634 General-Purpose Switching Device Applications Features • • • • The MCH6634 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance and ultrahigh-speed switching, thereby enabling high-density mounting.
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EN8229A
MCH6634
MCH6634
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marking XG
Abstract: sw 8154 if 3LP03M
Text: 3LP03M Ordering number : ENN8154 P-Channel Silicon MOSFET 3LP03M General-Purpose Switching Device Applications Features • • • • Low ON-resistance. High-speed switching. 2.5V drive. High ESD Voltage TYP 300V [Built-in one side diode for protection between Gate-to-Source].
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3LP03M
ENN8154
marking XG
sw 8154 if
3LP03M
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EC4304C
Abstract: No abstract text available
Text: EC4304C Ordering number : ENN8124 P-Channel Silicon MOSFET EC4304C General-Purpose Switching Device Applications Features • • • • Low ON-resistance. High-speed switching. 2.5V drive. High resistance to damage from ESD typ 300V [with a protection diode connected between the gate and source].
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EC4304C
ENN8124
EC4304C
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MCH3335
Abstract: MCH5810 SBS011
Text: MCH5810 注文コード No. N 8 1 9 4 三洋半導体データシート N MCH5810 MOSFET : P チャネル MOS 形シリコン電界効果トランジスタ SBD : ショットキバリアダイオード DC / DC コンバータ用 特長 ・P チャネル MOS 形電界効果トランジスタ（MCH3335）
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MCH5810
MCH3335
SBS011
900mm2
12505PE
TB-00001111
IT08704
IT08703
MCH3335
MCH5810
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8239
Abstract: MCH6629
Text: MCH6629 Ordering number : ENN8239 P-Channel Silicon MOSFET MCH6629 General-Purpose Switching Device Applications Features • • • • • Low ON-resistance. Ultrahigh-speed switching. 1.5V drive. High ESD voltage TYP 300V [Built-in one side diode for protection between Gate-to-Source].
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MCH6629
ENN8239
8239
MCH6629
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