13N50
Abstract: utc13n50 13n50g 13N50 equivalent mosfet driver 400v halogen ballast 13N50G-TA3-T
Text: UNISONIC TECHNOLOGIES CO., LTD 13N50 Preliminary Power MOSFET 500V N-CHANNEL MOSFET DESCRIPTION The UTC 13N50 is an N-Channel enhancement mode power MOSFET. The device adopts planar stripe and uses DMOS technology to minimize and provide lower on-state resistance and
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13N50
13N50
QW-R502-362
utc13n50
13n50g
13N50 equivalent
mosfet driver 400v
halogen ballast
13N50G-TA3-T
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13N50
Abstract: 13N50 equivalent 13n50g QW-R502-362 13N50G-TF1-T 362 MOSFET
Text: UNISONIC TECHNOLOGIES CO., LTD 13N50 Preliminary Power MOSFET 500V N-CHANNEL MOSFET DESCRIPTION 1 The UTC 13N50 is an N-Channel enhancement mode power MOSFET. The device adopts planar stripe and uses DMOS technology to minimize and provide lower on-state resistance and faster switching speed. It can
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13N50
13N50
O-220
O-220F
QW-R502-362
13N50 equivalent
13n50g
13N50G-TF1-T
362 MOSFET
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Diode S4 55a
Abstract: 11n50 ISD 2055 11N-50
Text: UNISONIC TECHNOLOGIES CO., LTD 11N50 Preliminary Power MOSFET 500V N-CHANNEL MOSFET DESCRIPTION The UTC 11N50 is an N-channel enhancement mode Power FET. It uses UTC advanced planar stripe, DMOS technology to provide customers perfect switching performance, minimal on-state
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11N50
11N50
O-220F1
QW-R502-462
Diode S4 55a
ISD 2055
11N-50
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TO-220 DIODE 11A
Abstract: VDS-500V 11n50
Text: UNISONIC TECHNOLOGIES CO., LTD 11N50 Preliminary Power MOSFET 11A, 500V N-CHANNEL POWER MOSFET 1 DESCRIPTION The UTC 11N50 is an N-channel enhancement mode power MOSFET. It uses UTC advanced planar stripe, DMOS technology to provide customers perfect switching performance, minimal on-state
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11N50
O-220
11N50
O-220F
O-220F1
O-262
QW-R502-462
TO-220 DIODE 11A
VDS-500V
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11N50
Abstract: 11N-50
Text: UNISONIC TECHNOLOGIES CO., LTD 11N50 Preliminary Power MOSFET 11A, 500V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 11N50 is an N-channel enhancement mode power MOSFET. It uses UTC advanced planar stripe, DMOS technology to provide customers perfect switching performance, minimal on-state
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11N50
11N50
QW-R502-462
11N-50
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11N-50
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 11N50 Preliminary Power MOSFET 11 Amps, 500 Volts N-CHANNEL POWER MOSFET 1 DESCRIPTION The UTC 11N50 is an N-channel enhancement mode power MOSFET. It uses UTC advanced planar stripe, DMOS technology to provide customers perfect switching performance, minimal on-state
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11N50
O-220
11N50
O-220F1
QW-R502-462
11N-50
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Untitled
Abstract: No abstract text available
Text: AON6454A 150V N-Channel MOSFET General Description Product Summary The AON6454A combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS ON .This device is ideal for boost converters and synchronous rectifiers for consumer,
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AON6454A
AON6454A
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Untitled
Abstract: No abstract text available
Text: AON6454A 150V N-Channel MOSFET General Description Product Summary The AON6454A combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS ON .This device is ideal for boost converters and synchronous rectifiers for consumer,
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AON6454A
AON6454A
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Untitled
Abstract: No abstract text available
Text: KSM11N50CF/KSMF11N50CF 500V N-Channel MOSFET TO-220 TO-220F Features • 11A, 500V, RDS on = 0.55Ω @VGS = 10 V • Low Gate Charge (typical 43 nC) • Low Crss (typical 20pF) • Fast Switching • 100% Avalanche Tested • Improved dv/dt Capability • Fast Recovery Body Diode (typical 90ns)
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KSM11N50CF/KSMF11N50CF
O-220
O-220F
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Untitled
Abstract: No abstract text available
Text: KSM13N50C/KSMF13N50C 500V N-Channel MOSFET TO-220 Features • • • • • • TO-220F 13A, 500V, RDS on = 0.48Ω @VGS = 10 V Low gate charge ( typical 43 nC) Low Crss ( typical 20pF) Fast switching 100% avalanche tested Improved dv/dt capability General Description
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KSM13N50C/KSMF13N50C
O-220
O-220F
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IRHF53Z30
Abstract: IRHF54Z30 IRHF57Z30 IRHF58Z30
Text: PD - 93793A RADIATION HARDENED POWER MOSFET THRU-HOLE TO-39 IRHF57Z30 30V, N-CHANNEL 4# TECHNOLOGY c Product Summary Part Number Radiation Level IRHF57Z30 100K Rads (Si) IRHF53Z30 300K Rads (Si) RDS(on) 0.045Ω 0.045Ω ID 12A* 12A* IRHF54Z30 600K Rads (Si)
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3793A
IRHF57Z30
IRHF53Z30
IRHF54Z30
IRHF58Z30
1000K
MIL-STD-750,
MlL-STD-750,
O-205AF
IRHF53Z30
IRHF54Z30
IRHF57Z30
IRHF58Z30
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24v 12v 10A regulator
Abstract: IRHF53Z30 IRHF54Z30 IRHF57Z30 IRHF58Z30
Text: PD - 93793 RADIATION HARDENED POWER MOSFET THRU-HOLE TO-39 IRHF57Z30 30V, N-CHANNEL R5 TECHNOLOGY Product Summary Part Number Radiation Level IRHF57Z30 100K Rads (Si) IRHF53Z30 300K Rads (Si) RDS(on) 0.045Ω 0.045Ω ID 12A* 12A* IRHF54Z30 600K Rads (Si)
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IRHF57Z30
IRHF53Z30
IRHF54Z30
IRHF58Z30
1000K
24v 12v 10A regulator
IRHF53Z30
IRHF54Z30
IRHF57Z30
IRHF58Z30
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Untitled
Abstract: No abstract text available
Text: PD - 93793C IRHF57Z30 JANSR2N7491T2 30V, N-CHANNEL RADIATION HARDENED POWER MOSFET THRU-HOLE TO-39 REF: MIL-PRF-19500/701 5 Product Summary Part Number IRHF57Z30 IRHF53Z30 TECHNOLOGY Radiation Level RDS(on) 100K Rads (Si) 0.045Ω 300K Rads (Si) 0.045Ω
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93793C
IRHF57Z30
JANSR2N7491T2
MIL-PRF-19500/701
IRHF53Z30
JANSF2N7491T2
IRHF54Z30
JANSG2N7491T2
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Untitled
Abstract: No abstract text available
Text: PD - 93793E IRHF57Z30 JANSR2N7491T2 30V, N-CHANNEL RADIATION HARDENED POWER MOSFET THRU-HOLE TO-39 REF: MIL-PRF-19500/701 5 Product Summary Part Number IRHF57Z30 IRHF53Z30 TECHNOLOGY Radiation Level RDS(on) 100K Rads (Si) 0.045Ω 300K Rads (Si) 0.045Ω
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93793E
IRHF57Z30
JANSR2N7491T2
MIL-PRF-19500/701
IRHF53Z30
JANSF2N7491T2
IRHF54Z30
JANSG2N7491T2
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IRHF53Z30
Abstract: IRHF54Z30 IRHF57Z30 IRHF58Z30
Text: PD - 93793B RADIATION HARDENED POWER MOSFET THRU-HOLE TO-39 IRHF57Z30 30V, N-CHANNEL 4# TECHNOLOGY c Product Summary Part Number Radiation Level IRHF57Z30 100K Rads (Si) IRHF53Z30 300K Rads (Si) RDS(on) 0.045Ω 0.045Ω ID 12A* 12A* IRHF54Z30 600K Rads (Si)
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93793B
IRHF57Z30
IRHF53Z30
IRHF54Z30
IRHF58Z30
1000K
MIL-STD-750,
MlL-STD-750,
O-205AF
IRHF53Z30
IRHF54Z30
IRHF57Z30
IRHF58Z30
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FDB44N25
Abstract: n-channel 250V power mosfet FDB44N25TM
Text: UniFET TM FDB44N25 250V N-Channel MOSFET Features Description • 44A, 250V, RDS on = 0.069Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 47 nC)
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FDB44N25
FDB44N25
n-channel 250V power mosfet
FDB44N25TM
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FQA13N50C
Abstract: No abstract text available
Text: FQA13N50C 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to
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FQA13N50C
FQA13N50C
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FQA13N50C
Abstract: No abstract text available
Text: FQA13N50C 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to
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FQA13N50C
FQA13N50C
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Untitled
Abstract: No abstract text available
Text: FQA13N50C 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to
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FQA13N50C
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STK621-051
Abstract: STK621-220 Sanyo STK621 STK630 INVERTER BOARD STK621 STK762-921G 3 phase inverter sanyo STK621 STK630-255A stk621 stk611-031
Text: Ordering number: EP35E Combining Power and Control, Sanyo Inverter Power IC Enables Easy Realization of Power Saving for Equipment To what extent can electrical equipment become environmentally friendly? One of the answers is power-saving and low-consumption power technology. Inverter technology
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EP35E
15-C2,
STK621-051
STK621-220
Sanyo STK621
STK630
INVERTER BOARD STK621
STK762-921G
3 phase inverter sanyo STK621
STK630-255A
stk621
stk611-031
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FQA13N50CF
Abstract: No abstract text available
Text: TM FQA13N50CF 500V N-Channel MOSFET Features Description • 15A, 500V, RDS on = 0.48Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge (typical 43 nC)
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FQA13N50CF
FQA13N50CF
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FQB13N50C
Abstract: FQI13N50C 13A500V
Text: TM FQB13N50C/FQI13N50C 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to
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FQB13N50C/FQI13N50C
FQB13N50C
FQI13N50C
13A500V
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FQPF13N50C
Abstract: FQP13N50C FQPF Series
Text: TM FQP13N50C/FQPF13N50C 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to
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FQP13N50C/FQPF13N50C
FQPF13N50C
FQP13N50C
FQPF Series
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FQPF13N50C
Abstract: FQP13N50C FQPF Series
Text: TM FQP13N50C/FQPF13N50C 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to
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FQP13N50C/FQPF13N50C
FQPF13N50C
FQP13N50C
FQPF Series
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