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    IS43R16160 Price and Stock

    Integrated Silicon Solution Inc IS43R16160F-6TLI

    IC DRAM 256MBIT PAR 66TSOP II
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    DigiKey IS43R16160F-6TLI Tray 857 1
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    Mouser Electronics IS43R16160F-6TLI 167
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    TME IS43R16160F-6TLI 1
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    New Advantage Corporation IS43R16160F-6TLI 432 1
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    Integrated Silicon Solution Inc IS43R16160F-6TL

    IC DRAM 256MBIT PAR 66TSOP II
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    DigiKey IS43R16160F-6TL Tray 77 1
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    Mouser Electronics IS43R16160F-6TL 220
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    Newark IS43R16160F-6TL Bulk 108
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    TME IS43R16160F-6TL 1
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    Avnet Silica IS43R16160F-6TL 14 Weeks 108
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    Integrated Silicon Solution Inc IS43R16160F-6BLI

    IC DRAM 256MBIT PAR 60TFBGA
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    DigiKey IS43R16160F-6BLI Tray 1 1
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    Mouser Electronics IS43R16160F-6BLI 116
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    Newark IS43R16160F-6BLI Bulk 190
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    Avnet Silica IS43R16160F-6BLI 14 Weeks 190
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    Integrated Silicon Solution Inc IS43R16160F-6BL

    IC DRAM 256MBIT PAR 60TFBGA
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    DigiKey IS43R16160F-6BL Tray 380
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    Mouser Electronics IS43R16160F-6BL
    • 1 $4.39
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    Newark IS43R16160F-6BL Bulk 190
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    Integrated Silicon Solution Inc IS43R16160D-6TL

    IC DRAM 256MBIT PAR 66TSOP II
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    DigiKey IS43R16160D-6TL Tray
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    Avnet Americas IS43R16160D-6TL Reel 10 Weeks 108
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    Mouser Electronics IS43R16160D-6TL 113
    • 1 $4.15
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    Bristol Electronics IS43R16160D-6TL 252
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    Quest Components IS43R16160D-6TL 201
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    IS43R16160D-6TL 18
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    TME IS43R16160D-6TL 1
    • 1 $4.93
    • 10 $4.76
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    Avnet Asia IS43R16160D-6TL 8 Weeks 1,080
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    Avnet Silica IS43R16160D-6TL 14 Weeks 108
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    IS43R16160 Datasheets (48)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IS43R16160 Integrated Silicon Solution DRAM Original PDF
    IS43R16160A Integrated Silicon Solution 16Meg x 16 256-MBIT DDR SDRAM Original PDF
    IS43R16160A-5T Integrated Silicon Solution 16Meg x 16 256-MBIT DDR SDRAM Original PDF
    IS43R16160A-5TL Integrated Silicon Solution 16Meg x 16 256-MBIT DDR SDRAM Original PDF
    IS43R16160A-6T Integrated Silicon Solution 16Meg x 16 256-MBIT DDR SDRAM Original PDF
    IS43R16160B Integrated Silicon Solution DRAM Original PDF
    IS43R16160B-5TLI Integrated Silicon Solution Memory, Integrated Circuits (ICs), IC DDR SDRAM 256MBIT 66TSOP Original PDF
    IS43R16160B-5TLI-TR Integrated Silicon Solution Memory, Integrated Circuits (ICs), IC DDR SDRAM 256MBIT 66TSOP Original PDF
    IS43R16160B-5TL-TR Integrated Silicon Solution Memory, Integrated Circuits (ICs), IC DDR SDRAM 256MBIT 66TSOP Original PDF
    IS43R16160B-6TL Integrated Silicon Solution Memory, Integrated Circuits (ICs), IC DDR SDRAM 256MBIT 66TSOP Original PDF
    IS43R16160B-6TLI Integrated Silicon Solution Memory, Integrated Circuits (ICs), IC DDR SDRAM 256MBIT 66TSOP Original PDF
    IS43R16160B-6TLI-TR Integrated Silicon Solution Memory, Integrated Circuits (ICs), IC DDR SDRAM 256MBIT 66TSOP Original PDF
    IS43R16160B-6TL-TR Integrated Silicon Solution Memory, Integrated Circuits (ICs), IC DDR SDRAM 256MBIT 66TSOP Original PDF
    IS43R16160D Integrated Silicon Solution DRAM Original PDF
    IS43R16160D-5BL Integrated Silicon Solution Memory, Integrated Circuits (ICs), IC DDR 256M 200MHZ 60BGA Original PDF
    IS43R16160D-5BLI Integrated Silicon Solution Memory, Integrated Circuits (ICs), IC DDR 256M 200MHZ 60BGA Original PDF
    IS43R16160D-5BLI-TR Integrated Silicon Solution Memory, Integrated Circuits (ICs), IC DDR 256M 200MHZ 60BGA Original PDF
    IS43R16160D-5BL-TR Integrated Silicon Solution Memory, Integrated Circuits (ICs), IC DDR 256M 200MHZ 60BGA Original PDF
    IS43R16160D-5TL Integrated Silicon Solution Memory, Integrated Circuits (ICs), IC DDR 256M 200MHZ 66TSOP Original PDF
    IS43R16160D-5TLI Integrated Silicon Solution Memory, Integrated Circuits (ICs), IC DDR 256M 200MHZ 66TSOP Original PDF

    IS43R16160 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IS46R16160B

    Abstract: zentel is43r16160b
    Text: IS43R83200B, IS46R83200B IS43R16160B, IS46R16160B 32Mx8, 16Mx16 256Mb DDR Synchronous DRAM FEATURES: • Vdd =Vddq = 2.5V+0.2V -5, -6, -75 • Double data rate architecture; two data transfers per clock cycle. • Bidirectional , data strobe (DQS) is transmitted/


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    PDF IS43R83200B, IS46R83200B IS43R16160B, IS46R16160B 32Mx8, 16Mx16 256Mb conx16 66-pin IS46R16160B zentel is43r16160b

    Untitled

    Abstract: No abstract text available
    Text: IS43R83200A -6,-75 IS43R16160A -6,-75 ISSI 4-bank x 8,388,608 - word x 8-bit (4-bank x 4,194,304 - word x 16-bit) 256 Mb DDR Synchronous DRAM May 2005 DESCRIPTION IS43R83200A is a 4-bank x 8,388,608-word x 8bit, IS43R16160A is a 4-bank x 4,194,304-word x 16bit double


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    PDF IS43R83200A IS43R16160A 16-bit) 608-word 304-word 16bit IS43R83200A/16160A

    16M x 16 DDR TSOP-66

    Abstract: DDR333 DDR400 IS43R16160A
    Text: ISSI IS43R16160A 16Meg x 16 256-MBIT DDR SDRAM PRELIMINARY INFORMATION NOVEMBER 2005 FEATURES DEVICE OVERVIEW • • ISSI’s 256-Mbit DDR SDRAM achieves high-speed data transfer using pipeline architecture and two data word accesses per clock cycle. The 268,435,456-bit memory


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    PDF IS43R16160A 16Meg 256-MBIT 456-bit 64M-bit 16-bit 16M x 16 DDR TSOP-66 DDR333 DDR400 IS43R16160A

    ISSI 742

    Abstract: No abstract text available
    Text: ISSI IS43R16160A 16Meg x 16 256-MBIT DDR SDRAM PRELIMINARY INFORMATION AUGUST 2005 FEATURES DEVICE OVERVIEW • • ISSI’s 256-Mbit DDR SDRAM achieves high-speed data transfer using pipeline architecture and two data word accesses per clock cycle. The 268,435,456-bit memory


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    PDF IS43R16160A 16Meg 256-MBIT ISSI 742

    Untitled

    Abstract: No abstract text available
    Text: IS43R16160 32Mx8, 16Mx16 256Mb Synchronous DRAM PRELIMINARY INFORMATION OCTOBER 2008 FEATURES: DESCRIPTION: •฀ VDD =VDDQ = 2.5V+0.2V -5, -6, -75 •฀ Double data rate architecture ; two data transfers per clock cycle. •฀ Bidirectional , data strobe (DQS) is transmitted/


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    PDF IS43R16160 32Mx8, 16Mx16 256Mb

    IS43R83200B

    Abstract: 78S18 A3S56D30 IC43R16160B
    Text: IS43R83200B IS43R16160B, IC43R16160B 32Mx8, 16Mx16 256Mb DDR Synchronous DRAM FEATURES: • Vdd =Vddq = 2.5V+0.2V -5, -6, -75 • Double data rate architecture; two data transfers per clock cycle. • Bidirectional , data strobe (DQS) is transmitted/ received with data


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    PDF IS43R83200B IS43R16160B, IC43R16160B 32Mx8, 16Mx16 256Mb IS43R83200B 78S18 A3S56D30 IC43R16160B

    is43r16160b-6tli

    Abstract: is43r16160b
    Text: IS43R83200B IS43R16160B, IC43R16160B 32Mx8, 16Mx16 256Mb Synchronous DRAM FEATURES: • Vdd =Vddq = 2.5V+0.2V -5, -6, -75 • Double data rate architecture ; two data transfers per clock cycle. • Bidirectional , data strobe (DQS) is transmitted/ received with data


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    PDF IS43R83200B IS43R16160B, IC43R16160B 32Mx8, 16Mx16 256Mb 608-word IS/IC43R16160B 304-word is43r16160b-6tli is43r16160b

    zentel

    Abstract: a3s56d30 IS43R16160B-6TL
    Text: IS43R83200B IS43R16160B PRELIMINARY INFORMATION JUNE 2007 FEATURES: DESCRIPTION: -Vdd=Vddq=2.5V+0.2V -6, -75 -Vdd=Vddq=2.6V+0.1V (-5) -Double data rate architecture ; two data transfers per clock cycle. -Bidirectional , data strobe(DQS) is transmitted/received


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    PDF IS43R83200B IS43R16160B zentel a3s56d30 IS43R16160B-6TL

    IS43R83200B

    Abstract: IS43R16160B zentel IS46R16160B IS43R16160B-5TL
    Text: IS43R83200B, IS46R83200B IS43R16160B, IS46R16160B 32Mx8, 16Mx16 256Mb DDR Synchronous DRAM FEATURES: • Vdd =Vddq = 2.5V+0.2V -5, -6, -75 • Double data rate architecture; two data transfers per clock cycle. • Bidirectional , data strobe (DQS) is transmitted/


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    PDF IS43R83200B, IS46R83200B IS43R16160B, IS46R16160B 32Mx8, 16Mx16 256Mb IS46R16160B-6TLA1 IS46R16160B-6BLA1 IS46R83200B-6TLA1 IS43R83200B IS43R16160B zentel IS46R16160B IS43R16160B-5TL

    Untitled

    Abstract: No abstract text available
    Text: IS43R83200B, IS46R83200B IS43R16160B, IS46R16160B 32Mx8, 16Mx16 256Mb DDR Synchronous DRAM AUGUST 2010 FEATURES: DESCRIPTION: •฀ VDD =VDDQ = 2.5V+0.2V -5, -6, -75 •฀ Double data rate architecture; two data transfers per clock cycle. •฀ Bidirectional , data strobe (DQS) is transmitted/


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    PDF IS43R83200B, IS46R83200B IS43R16160B, IS46R16160B 32Mx8, 16Mx16 256Mb IS46R16160B-6TLA1 IS46R16160B-6BLA1 IS46R83200B-6TLA1

    IS43R16160

    Abstract: 43R16160 A3S56D A3S56 zentel a3s56d30 PRE-A10
    Text: IS43R16160 32Mx8, 16Mx16 256Mb Synchronous DRAM FEATURES: • Vdd =Vddq = 2.5V+0.2V -5, -6, -75 • Double data rate architecture ; two data transfers per clock cycle. • Bidirectional , data strobe (DQS) is transmitted/ received with data • Differential clock input (CLK and /CLK)


    Original
    PDF IS43R16160 32Mx8, 16Mx16 256Mb IS43R16160 43R16160 A3S56D A3S56 zentel a3s56d30 PRE-A10

    tsop-ii 66 PIN

    Abstract: zentel a3s56d30
    Text: IS43R83200B IS43R16160B PRELIMINARY INFORMATION APRIL 2007 FEATURES: DESCRIPTION: -Vdd=Vddq=2.5V+0.2V -6, -75 -Vdd=Vddq=2.6V+0.1V (-5) -Double data rate architecture ; two data transfers per clock cycle. -Bidirectional , data strobe(DQS) is transmitted/received


    Original
    PDF IS43R83200B IS43R16160B tsop-ii 66 PIN zentel a3s56d30

    TSOP 66 pin

    Abstract: No abstract text available
    Text: IS43R83200B IS43R16160B, IC43R16160B 32Mx8, 16Mx16 256Mb DDR Synchronous DRAM FEATURES: • Vdd =Vddq = 2.5V+0.2V -5, -6, -75 • Double data rate architecture; two data transfers per clock cycle. • Bidirectional , data strobe (DQS) is transmitted/ received with data


    Original
    PDF IS43R83200B IS43R16160B, IC43R16160B 32Mx8, 16Mx16 256Mb TSOP 66 pin

    Untitled

    Abstract: No abstract text available
    Text: ISSI IS43R16160A1 16Meg x 16 256-MBIT DDR SDRAM PRELIMINARY INFORMATION MAY 2006 FEATURES DEVICE OVERVIEW • • ISSI’s 256-Mbit DDR SDRAM achieves high-speed data transfer using pipeline architecture and two data word accesses per clock cycle. The 268,435,456-bit memory


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    PDF IS43R16160A1 16Meg 256-MBIT

    Samsung EOL

    Abstract: IS42S81600F is42s16320 IS43DR16320 IS42S32200L IS49NLC36800 IS43R32400E IS46R Mobile SDRAM IS42S32200E
    Text: Industrial Grade Memory Products Selecting the Right ISSI Industrial Grade Memory Fastest Random Access Access <20ns 288-576Mb Memory No DRC* Lower cost/bit 18-72Mb RLDRAM 10-20ns Easy Interface, Low Power Higher Density Ultra Low Power Synch SRAM <5ns Asynch SRAM


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    PDF 288-576Mb 10-20ns 18-72Mb 64Kb-16Mb 8Mb-64Mb 16Mb-512Mb 16Mb-1Gb 256Mb-2Gb 200Mhz -40oC Samsung EOL IS42S81600F is42s16320 IS43DR16320 IS42S32200L IS49NLC36800 IS43R32400E IS46R Mobile SDRAM IS42S32200E

    is25c64B

    Abstract: IC61C1024 IS25C128A IS42VM16800E IS42SM16800 IS24C16A Smart is62c1024al tsop2-54 4kx8 sram IS42S32800D
    Text: To our valued customers, Often times electronic systems are placed in harsh environments that test the limits of device quality and reliability. These harsh environments exist in many Industrial, Automotive, Networking, and Mobile Communication applications. Many of these applications are


    Original
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    IC1210-m128LQ

    Abstract: IC1114 IC1210-f128lq IC1230-M128LQ IC1110-F128LQ IC1210 M128LQ IC1110-M128LQ IC1210 xd card reader IC1230-F128LQ
    Text: ISSI Advanced Memory Solutions PRODUCT SELECTOR GUIDE JUNE 2006 DRAM SRAM EEPROM LOGIC ICSI PRODUCTS Dear Valued Customer, While many memory suppliers are discontinuing SRAM and low to medium density DRAM products, we at ISSI are not. While many memory suppliers are


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    is62c51216al

    Abstract: IS43LR16320B IS66WVE4M16BLL is66wve2m16 IS43DR16640A BGA60 IS66WVE4M16ALL TSOP2-44 IS42SM16400G is45vs16160d
    Text: To our valued customers, At ISSI we design, develop and market high performance integrated circuits for the following key markets: i automotive electronics (ii) networking/telecommunications infrastructure, (iii) industrial/military/medical electronics (iv) mobile communications and digital


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    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


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    PDF P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS

    FSQ510 Equivalent

    Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
    Text: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178


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    PDF GP-20) FSQ510 Equivalent BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2

    00E-12

    Abstract: No abstract text available
    Text: IS43R83200D IS43/46R16160D, IS43/46R32800D ADVANCED INFORMATION 8Mx32, 16Mx16, 32Mx8 DECEMBER 2011 256Mb DDR SDRAM FEATURES DEVICE OVERVIEW • • • • ISSI’s 256-Mbit DDR SDRAM achieves high speed data transfer using pipeline architecture and two data word


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    PDF IS43R83200D IS43/46R16160D, IS43/46R32800D 8Mx32, 16Mx16, 32Mx8 256Mb 00E-12

    Automotive Product Selector Guide

    Abstract: products automotive IS61WV51216 IS61WV512 DDR RAM 512M is66wve2m16 IS61LPS2048 IS61WV25632 BGA165 VFBGA package tray
    Text: Automotive Market Support Introduction ISSI has been supporting the Automotive Market since 1999. In 2001, ISSI began to broaden its support of the market by introducing the Automotive Business Unit. The purpose of this business unit is to provide cross-functional unit support within ISSI to continually enhance the Automotive Infrastructure from


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    16M X 32 SDR SDRAM

    Abstract: IS42VM16400K is66wve2m16 IS42SM16100G is66wvc4m16 ISSI IS42S16400j IS66WVC4M16ALL CRAM 256mb IS42RM16800G
    Text: Known Good Die KGD /Wafer Level Memories Introduction Die-level customers require a memory partner who can meet their many unique needs for high quality, long term support, guaranteed availability, and low total cost of ownership. ISSI is a provider of high quality specialty memory solutions for


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    IS43R32800D

    Abstract: No abstract text available
    Text: IS43R83200D IS43/46R16160D, IS43/46R32800D 8Mx32, 16Mx16, 32Mx8 256Mb DDR SDRAM JUNE 2012 FEATURES DEVICE OVERVIEW • VDD and VDDQ: 2.5V ± 0.2V • SSTL_2 compatible I/O • Double-data rate architecture; two data transfers per clock cycle • Bidirectional, data strobe DQS is transmitted/


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    PDF IS43R83200D IS43/46R16160D, IS43/46R32800D 8Mx32, 16Mx16, 32Mx8 256Mb 144-ball IS43R32800D