IRL 1520 N Search Results

IRL 1520 N Result Highlights (5)

Part	Manufacturer	Description
74ACT11520DW-G	Rochester Electronics LLC	74ACT11520 - Identity Comparator
2SK1520-E	Renesas Electronics Corporation	Silicon N Channel MOSFET, TO-3PL, /Tube
M2006-03-491.5200	Renesas Electronics Corporation	CMTS Direct Conversion (Zero IF) Clock Source
M2006-03-491.5200T	Renesas Electronics Corporation	CMTS Direct Conversion (Zero IF) Clock Source
10127815-20LF	Amphenol Communications Solutions	Minitek® Pwr 4.2, Dual Row, Receptacle Housing, 20 Positions, Natural Color, GW Compatible Nylon66.

IRL 1520 N Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
IrL 1540 N Abstract: IrL 1520 N IrL 1540 g irl 1520 AN-1784 U 1560 SMA428A AN1784 Text: AN1784 APPLICATION NOTE AN LNA OPTIMIZED AT 1575 MHz USING THE Si MMIC SMA428A N. Micalizzi, F. Caramagno, G. Privitera Table 1: Data for GPS Application f = 1575 MHz Parameters Value Unit Vcc 2.7 V Icc 5.9 mA 1.45 dB Gain 18 dB RLin 6.7 dB Noise Figure	Original	PDF	AN1784 SMA428A SMA428A IrL 1540 N IrL 1520 N IrL 1540 g irl 1520 AN-1784 U 1560 AN1784
irl 1520 Abstract: rfha1043 IrL 1520 N Text: RFHA1043 RFHA1043 1.2GHz to 1.85GHz 150W GaN Power Amplifier 1.2GHz to 1.85GHz 150W GaN Power Amplifier Package: Flanged Ceramic, 2-Pin, RF400-2 Features  Advanced GaN HEMT Technology  Peak Power 150W  Advanced Heat-Sink Technology   RF IN VGQ	Original	PDF	RFHA1043 85GHz RFHA1043 RF400-2 -30dBc DS121030 irl 1520 IrL 1520 N
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF7S16150H Rev. 1, 12/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF7S16150HR3 MRF7S16150HSR3 Designed for WiMAX base station applications with frequencies up to	Original	PDF	MRF7S16150H MRF7S16150HR3 MRF7S16150HSR3 MRF7S16150HR3
IrL 1540 N Abstract: wimax spectrum mask irl 1520 25VDD ATC100B470BT500XT A114 A115 AN1955 C101 JESD22 Text: Freescale Semiconductor Technical Data Document Number: MRF7S16150H Rev. 1, 12/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF7S16150HR3 MRF7S16150HSR3 Designed for WiMAX base station applications with frequencies up to	Original	PDF	MRF7S16150H MRF7S16150HR3 MRF7S16150HSR3 MRF7S16150HR3 IrL 1540 N wimax spectrum mask irl 1520 25VDD ATC100B470BT500XT A114 A115 AN1955 C101 JESD22
IRL 1630 Abstract: IrL 1540 N A114 A115 AN1955 C101 JESD22 MRF7S16150HR3 MRF7S16150HSR3 MRF7S16150HR Text: Freescale Semiconductor Technical Data Document Number: MRF7S16150H Rev. 0, 6/2007 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF7S16150HR3 MRF7S16150HSR3 Designed for WiMAX base station applications with frequencies up to	Original	PDF	MRF7S16150H MRF7S16150HR3 MRF7S16150HSR3 MRF7S16150HR3 IRL 1630 IrL 1540 N A114 A115 AN1955 C101 JESD22 MRF7S16150HSR3 MRF7S16150HR
Untitled Abstract: No abstract text available Text: SMA661AS GPS HIGH GAIN LNA ICs PRELIMINARY DATA GENERAL FEATURES • LOW NOISE FIGURE 1.4 dB @ 1.575 GHz ■ HIGH GAIN 17 dB @ 1.575 GHz ■ POWER DOWN FUNCTION ■ TEMPERATURE COMPENSATED ■ UNCONDITIONALLY STABLE ■ INTEGRATED OUTPUT MATCHING ■ 70 GHz Silicon Germanium TECHNOLOGY	Original	PDF	SMA661AS OT666) OT666 SMA661AS 575GHz)
IrL 1540 N Abstract: SMA661AS SMA661ASTR SMA661 Text: SMA661AS GPS HIGH GAIN LNA ICs PRELIMINARY DATA GENERAL FEATURES • LOW NOISE FIGURE 1.4 dB @ 1.575 GHz ■ HIGH GAIN 17 dB @ 1.575 GHz ■ POWER DOWN FUNCTION ■ TEMPERATURE COMPENSATED ■ UNCONDITIONALLY STABLE ■ INTEGRATED OUTPUT MATCHING ■ ESD PROTECTION ± 2kV HBM	Original	PDF	SMA661AS OT666) OT666 SMA661AS 575GHz) IrL 1540 N SMA661ASTR SMA661
CAPACITOR chip murata mtbf Abstract: RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ rohm mtbf CAPACITOR chip mtbf GX-0300-55-22 IrL 1540 N RF NPN POWER TRANSISTOR C 2 WATT 2 GHZ BD136 RF NPN POWER TRANSISTOR CLASS 2 WATT 2 GHZ transistor bd136 Text: MOTOROLA Order this document by MRF15030/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF15030 Designed for 26 volts microwave large–signal, common emitter, class A and class AB linear amplifier applications in industrial and commercial FM/AM	Original	PDF	MRF15030/D MRF15030 MRF15030/D* CAPACITOR chip murata mtbf RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ rohm mtbf CAPACITOR chip mtbf GX-0300-55-22 IrL 1540 N RF NPN POWER TRANSISTOR C 2 WATT 2 GHZ BD136 RF NPN POWER TRANSISTOR CLASS 2 WATT 2 GHZ transistor bd136
Untitled Abstract: No abstract text available Text: MOTOROLA Order this document by MRF15030/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF15030 Designed for 26 volts microwave large–signal, common emitter, class A and class AB linear amplifier applications in industrial and commercial FM/AM	Original	PDF	MRF15030/D MRF15030 MRF15030/D*
CAPACITOR chip murata mtbf Abstract: BD136 Text: MOTOROLA Order this document by MRF15090/D SEMICONDUCTOR TECHNICAL DATA NPN Silicon RF Power Transistor LAST SHIP 22MAR02 The RF Line MRF15090 Designed for 26 volts microwave large–signal, common emitter, class A and class AB linear amplifier applications in industrial and commercial FM/AM	Original	PDF	MRF15090/D MRF15090 MRF15090 MRF15090/D CAPACITOR chip murata mtbf BD136
Untitled Abstract: No abstract text available Text: MOTOROLA Order this document by MRF15090/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF15090 Designed for 26 volts microwave large–signal, common emitter, class A and class AB linear amplifier applications in industrial and commercial FM/AM	Original	PDF	MRF15090/D MRF15090 DEVICEMRF15090/D
CAPACITOR chip murata mtbf Abstract: IrL 1540 N CAPACITOR chip mtbf motorola 1550 BD135 BD136 MJD47 MRF15090 MUR5120T3 MURATA ERIE CAPACITOR Text: MOTOROLA Order this document by MRF15090/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF15090 Designed for 26 volts microwave large–signal, common emitter, class A and class AB linear amplifier applications in industrial and commercial FM/AM	Original	PDF	MRF15090/D MRF15090 CAPACITOR chip murata mtbf IrL 1540 N CAPACITOR chip mtbf motorola 1550 BD135 BD136 MJD47 MRF15090 MUR5120T3 MURATA ERIE CAPACITOR
CAPACITOR chip murata mtbf Abstract: MUR5120 irl 1520 MUR5120T3 IrL 1540 N 462 variable capacitor mallory capacitor 1500 uF CAPACITOR chip mtbf MRF15090 rohm mtbf Text: MOTOROLA Order this document by MRF15090/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF15090 Designed for 26 volts microwave large–signal, common emitter, class A and class AB linear amplifier applications in industrial and commercial FM/AM	Original	PDF	MRF15090/D MRF15090 DEVICEMRF15090/D CAPACITOR chip murata mtbf MUR5120 irl 1520 MUR5120T3 IrL 1540 N 462 variable capacitor mallory capacitor 1500 uF CAPACITOR chip mtbf MRF15090 rohm mtbf
BD136 Abstract: No abstract text available Text: MOTOROLA Order this document by MRF15090/D SEMICONDUCTOR TECHNICAL DATA NPN Silicon RF Power Transistor LAST SHIP 15MAR02 The RF Line MRF15090 Designed for 26 volts microwave large–signal, common emitter, class A and class AB linear amplifier applications in industrial and commercial FM/AM	Original	PDF	MRF15090/D MRF15090 MRF15090 DEVICEMRF15090/D BD136

murata capacitor 0603 GRM188 Abstract: murata grm188 capacitor gps lna Text: SMA661AS Fully integrated GPS LNA IC Feature summary • Power down function ■ Integrated matching networks ■ Low noise figure 1.4 dB @ 1.575 GHz ■ High gain 17 dB @ 1.575 GHz ■ High linearity IIP3 = +3dBm ■ Temperature compensated ■ Unconditionally stable	Original	PDF	SMA661AS OT666 SMA661AS SMA661AS, murata capacitor 0603 GRM188 murata grm188 capacitor gps lna
Untitled Abstract: No abstract text available Text: SMA661AS Fully integrated GPS LNA IC Features • Power down function ■ Integrated matching networks ■ Low noise figure 1.15 dB @ 1.575 GHz ■ High gain 18 dB @ 1.575 GHz ■ High linearity IIP3 = +3 dBm ■ Temperature compensated ■ Unconditionally stable	Original	PDF	SMA661AS OT666 SMA661AS
ca97901 Abstract: No abstract text available Text: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA The RF Line CA97901 3 6 -C h an n e l 450 M H z C A T V H i-S lo p e In p u t/O u tpu t T ru n k A m p lifie r . . . allow s increased trunk length. Effectively reduces trunk distortion. 5.0 d B le ss output n oise at lo w end.	OCR Scan	PDF
DIODE ku 1490 Abstract: ku 1490 spectra Ve 1200 capacitor ase 104 Text: M OTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF15030 D e sig n e d fo r 26 v o lts m icro w a ve la rg e -s ig n a l, c o m m o n em itte r, cla s s A and c la s s A B lin e a r a m p lifie r a p p lic a tio n s in in d u s tria l a n d c o m m e rc ia l F M /A M	OCR Scan	PDF	MRF15030 BD135) MRF15030 DIODE ku 1490 ku 1490 spectra Ve 1200 capacitor ase 104
178 09T Abstract: capacitor mallory 1000 watt Motorola power supply RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ 100 watt transistor transistor MTBF CAPACITOR chip murata mtbf RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ bd136 equivalent Mallory Capacitor Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Pow er Transistor Designed for 26 volts microwave large-signal, common emitter, class A and class AB linear amplifier applications in industrial and commercial FM/AM equipment operating in the range 1400-1600 MHz.	OCR Scan	PDF	BD135) BD136) GX-0300-55-22, MRF15030 178 09T capacitor mallory 1000 watt Motorola power supply RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ 100 watt transistor transistor MTBF CAPACITOR chip murata mtbf RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ bd136 equivalent Mallory Capacitor
rohm mtbf Abstract: CAPACITOR chip murata mtbf CAPACITOR murata mtbf MOTOROLA ELECTROLYTIC CAPACITOR RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ equivalent of transistor BFT 51 2 watt rf transistor RF NPN POWER TRANSISTOR 1000 WATT BD135 transistor RF NPN POWER TRANSISTOR 10 WATT 2.4 GHZ Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information MRF15030 The RF Line NPN Silicon RF Power Transistor Motorola Preferred Device Designed for 26 volts microwave large-signal, common emitter, class A and class AB linear amplifier applications in industrial and commercial FM/AM	OCR Scan	PDF	MRF15030 BD135) BD136) GX-0300-55-22, MRF15030 rohm mtbf CAPACITOR chip murata mtbf CAPACITOR murata mtbf MOTOROLA ELECTROLYTIC CAPACITOR RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ equivalent of transistor BFT 51 2 watt rf transistor RF NPN POWER TRANSISTOR 1000 WATT BD135 transistor RF NPN POWER TRANSISTOR 10 WATT 2.4 GHZ
CY7C605 Abstract: CY7C602 Cy7C601 MADJ IrL 1520 N M-BUS CYM6003K Text: CYM6003K PRELIMINARY CYPRESS SEMICONDUCTOR Features • Complete SPARC CPU solution including cache — CY7C601 Integer Unit iU — CY7C602 Floating-Point Unit (FPU) — CY7C605 Cache Controller and Memory Management Unit for Multiprocessing (CMU - MP)	OCR Scan	PDF	CYM6003K CY7C601 CY7C602 CY7C605 CY7C157 MADJ IrL 1520 N M-BUS CYM6003K
capacitor mallory Abstract: RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ 1000 watt Motorola power supply RF NPN POWER TRANSISTOR C 2 WATT 2 GHZ 100 watt transistor bd136 equivalent rohm mtbf Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Pow er Transistor MRF15030 Designed for 26 volts microwave large-signal, common emitter, class A and class AB linear amplifier applications in industrial and commercial FM/AM equipment operating in the range 1400-1600 MHz.	OCR Scan	PDF	BD135) BD136) MRF15030 capacitor mallory RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ 1000 watt Motorola power supply RF NPN POWER TRANSISTOR C 2 WATT 2 GHZ 100 watt transistor bd136 equivalent rohm mtbf
SU 179 transistor Abstract: transistors equivalent 0912 bd135 equivalent IrL 1540 N 1000 watts class d amplifier schematic bd136 equivalent IrL 1540 g RF NPN POWER TRANSISTOR 3 GHZ 200 watts Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub-Micron Bipolar Line M RF15060 M RF15060S RF Pow er Bipolar Transistors Designed for broadband commercial and industrial applications at frequen cies from 1400 to 1600 MHz. The high gain and broadband performance of	OCR Scan	PDF	IS12I IS22I MRF15060 MRF15060S SU 179 transistor transistors equivalent 0912 bd135 equivalent IrL 1540 N 1000 watts class d amplifier schematic bd136 equivalent IrL 1540 g RF NPN POWER TRANSISTOR 3 GHZ 200 watts
mallory 170 Abstract: No abstract text available Text: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA Advance Information MRF15090 The RF Line NPN Silicon RF Power TVansistor Motorola Preferred Device Designed for 26 volts microwave large-signal, common emitter, class A and class AB linear amplifier applications in industrial and commercial FM/AM	OCR Scan	PDF	MRF15090 BD135) BD136) GX-0300-55-22, MRF15090 mallory 170

IRL 1520 N Search Results

IRL 1520 N Result Highlights (5)

IRL 1520 N Datasheets Context Search

IrL 1540 N

irl 1520

Untitled

IrL 1540 N

IRL 1630

Untitled

IrL 1540 N

CAPACITOR chip murata mtbf

Untitled

CAPACITOR chip murata mtbf

Untitled

CAPACITOR chip murata mtbf

CAPACITOR chip murata mtbf

BD136

murata capacitor 0603 GRM188

Untitled

ca97901

DIODE ku 1490

178 09T

rohm mtbf

CY7C605

capacitor mallory

SU 179 transistor

mallory 170