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    Infineon Technologies AG IRHYB67130CMSCS

    Transistor MOSFET N-Channel 100V 20A 3-Pin TO-257AA - Bulk (Alt: IRHYB67130CMSCS)
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    IRHYB67130CM Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRHYB67130CM International Rectifier 100V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a Low-Ohmic TO-257AA package. Original PDF

    IRHYB67130CM Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    irf 343

    Abstract: IRHYB63130CM IRHYB67130CM isd 1710
    Text: PD-95841A RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-257AA IRHYB67130CM 100V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) IRHYB67130CM 100K Rads (Si) 0.042Ω ID 20A* IRHYB63130CM 300K Rads (Si) 20A* 0.042Ω Low-Ohmic


    Original     		PD-95841A O-257AA) IRHYB67130CM IRHYB67130CM IRHYB63130CM O-257AA 90MeV/ 5M-1994. O-257AA. irf 343 isd 1710 PDF

    Untitled

    Abstract: No abstract text available
    Text: PD-95841B RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-257AA IRHYB67130CM 100V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level IRHYB67130CM 100K Rads (Si) RDS(on) I D 0.042Ω 20A* IRHYB63130CM 300K Rads (Si) 0.042Ω 20A* International Rectifier’s R6 TM technology provides


    Original     		PD-95841B O-257AA) IRHYB67130CM IRHYB63130CM 90MeV/ 5M-1994. O-257AA. PDF

    Untitled

    Abstract: No abstract text available
    Text: PD-95841B RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-257AA IRHYB67130CM 100V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level IRHYB67130CM 100K Rads (Si) RDS(on) I D 0.042Ω 20A* IRHYB63130CM 300K Rads (Si) 0.042Ω 20A* International Rectifier’s R6 TM technology provides


    Original     		PD-95841B O-257AA) IRHYB67130CM IRHYB67130CM IRHYB63130CM 90MeV/ 5M-1994. O-257AA. PDF

    038mh

    Abstract: No abstract text available
    Text: PD - 95841 RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-257AA IRHYB67130CM 100V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) IRHYB67130CM 100K Rads (Si) 0.042Ω ID 20A* IRHYB63130CM 300K Rads (Si) 0.042Ω 20A* IRHYB64130CM 600K Rads (Si)


    Original     		O-257AA) IRHYB67130CM IRHYB63130CM IRHYB64130CM IRHYB68130CM 1000K O-257AA 90MeV/ 5M-1994. 038mh PDF

    IRF460

    Abstract: SMD TRANSISTOR MARKING k38 smd transistor k38 we 751002 s SMD-6C transistor smd k45 RAD-HARD igbt IRF3504 afl2805s manufactured by international rectifier 550-065
    Text: Aerospace and Defense Products Short Form Catalog 2007 Welcome to the Aerospace and Defense Products Short Form Catalog. Inside is an overview of our product line including product specific information. To learn more, visit our web site at irf.com where you will find technical documents, data sheets for all products, application notes, design tips, technical papers, application-specific information,


    Original     		30am-5 44-0-1737-2com DB8029C IRF460 SMD TRANSISTOR MARKING k38 smd transistor k38 we 751002 s SMD-6C transistor smd k45 RAD-HARD igbt IRF3504 afl2805s manufactured by international rectifier 550-065 PDF