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    IRFZ34 MOSFETS Search Results

    IRFZ34 MOSFETS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    IRFZ34 MOSFETS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: IRFZ34, SiHFZ34 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 10 V RoHS* Qg (Max.) (nC) 46 • Fast Switching Qgs (nC) 11 • Ease of Paralleling 22 • Simple Drive Requirements Qgd (nC) Configuration


    Original
    PDF IRFZ34, SiHFZ34 2002/95/EC O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: IRFZ34, SiHFZ34 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 10 V RoHS* Qg (Max.) (nC) 46 • Fast Switching Qgs (nC) 11 • Ease of Paralleling 22 • Simple Drive Requirements Qgd (nC) Configuration


    Original
    PDF IRFZ34, SiHFZ34 2002/95/EC O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: IRFZ34, SiHFZ34 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 10 V RoHS* Qg (Max.) (nC) 46 • Fast Switching Qgs (nC) 11 • Ease of Paralleling 22 • Simple Drive Requirements Qgd (nC) Configuration


    Original
    PDF IRFZ34, SiHFZ34 2002/95/EC O-220AB 11-Mar-11

    irfz34

    Abstract: No abstract text available
    Text: IRFZ34, SiHFZ34 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 10 V RoHS* Qg (Max.) (nC) 46 • Fast Switching Qgs (nC) 11 • Ease of Paralleling 22 • Simple Drive Requirements Qgd (nC) Configuration


    Original
    PDF IRFZ34, SiHFZ34 2002/95/EC O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 irfz34

    Untitled

    Abstract: No abstract text available
    Text: IRFZ34, SiHFZ34 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 10 V RoHS* Qg (Max.) (nC) 46 • Fast Switching Qgs (nC) 11 • Ease of Paralleling 22 • Simple Drive Requirements Qgd (nC) Configuration


    Original
    PDF IRFZ34, SiHFZ34 2002/95/EC O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: IRFZ34, SiHFZ34 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 10 V RoHS* Qg (Max.) (nC) 46 • Fast Switching Qgs (nC) 11 • Ease of Paralleling 22 • Simple Drive Requirements Qgd (nC) Configuration


    Original
    PDF IRFZ34, SiHFZ34 2002/95/EC O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    IRFZ34 Datasheet

    Abstract: irfz34 SiHFZ34 SiHFZ34-E3 irfz34 mosfets
    Text: IRFZ34, SiHFZ34 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 46 • Fast Switching Qgs (nC) 11 • Ease of Paralleling 22 • Simple Drive Requirements Qgd (nC) Configuration


    Original
    PDF IRFZ34, SiHFZ34 O-220 O-220 18-Jul-08 IRFZ34 Datasheet irfz34 SiHFZ34-E3 irfz34 mosfets

    irfz34

    Abstract: No abstract text available
    Text: IRFZ34, SiHFZ34 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 46 • Fast Switching Qgs (nC) 11 • Ease of Paralleling 22 • Simple Drive Requirements Qgd (nC) Configuration


    Original
    PDF IRFZ34, SiHFZ34 O-220 12-Mar-07 irfz34

    Untitled

    Abstract: No abstract text available
    Text: IRFZ34, SiHFZ34 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 10 V RoHS* Qg (Max.) (nC) 46 • Fast Switching Qgs (nC) 11 • Ease of Paralleling 22 • Simple Drive Requirements Qgd (nC) Configuration


    Original
    PDF IRFZ34, SiHFZ34 2002/95/EC O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    irfz34

    Abstract: No abstract text available
    Text: IRFZ34, SiHFZ34 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 10 V RoHS* Qg (Max.) (nC) 46 • Fast Switching Qgs (nC) 11 • Ease of Paralleling 22 • Simple Drive Requirements Qgd (nC) Configuration


    Original
    PDF IRFZ34, SiHFZ34 2002/95/EC O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 irfz34

    1RFZ24

    Abstract: IRFZ44 equivalent nec ps2501-4 SEC irf630 LT1161 IRFZ44G l1161 IRF630 SEC LT1161CN IRFZ34 mosfet
    Text: LT1161 Quad Protected High-Side MOSFET Driver U DESCRIPTION FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ The LT1161 is a quad high-side gate driver allowing the use of low cost N-channel power MOSFETs for high-side switching applications. It has four independent switch


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    PDF LT1161 LT1161 Inpu37 SOL20 1RFZ24 IRFZ44 equivalent nec ps2501-4 SEC irf630 IRFZ44G l1161 IRF630 SEC LT1161CN IRFZ34 mosfet

    keystone carbon

    Abstract: 7417 TTL 555 pwm mosfet RL2006-100-70-30-PT1 8pin dual gate driver TTL 7417 LT 1153 LTC1154 mosfet driver 5v to 30v regulator 48V
    Text: High-Side and Synchronous N-Channel MOSFET Drivers – InfoCard 7 VSUPPLY PRODUCT PACKAGES FUNCTION MIN LTC 1153 8-Pin PDIP, SO Electronic Circuit Breaker 4.5V LTC1154 8-Pin PDIP, SO Single High-Side Driver 4.5V 18V Single Version of LTC1155 LTC1155 8-Pin PDIP, SO


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    PDF LTC1154 LTC1155 LTC1156 16-Pin LTC1157 LT1161 20-Pin LT1158IC keystone carbon 7417 TTL 555 pwm mosfet RL2006-100-70-30-PT1 8pin dual gate driver TTL 7417 LT 1153 LTC1154 mosfet driver 5v to 30v regulator 48V

    keystone carbon

    Abstract: 8pin dual gate driver LT 1153 rl2006 LTC1154
    Text: High-Side and Synchronous N-Channel MOSFET Drivers – InfoCard 7 VSUPPLY PRODUCT PACKAGES FUNCTION MIN LTC 1153 8-Pin PDIP, SO Electronic Circuit Breaker 4.5V LTC1154 8-Pin PDIP, SO Single High-Side Driver 4.5V 18V Single Version of LTC1155 LTC1155 8-Pin PDIP, SO


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    PDF LTC1154 LTC1155 LTC1156 LTC1157 LT1161 LTC1163/65 LT1089 LT1188 LTC1255 LT1336 keystone carbon 8pin dual gate driver LT 1153 rl2006

    12v irlz44

    Abstract: regulator 5a 28v P55C CTX02 coiltronics IRFZ14 IRFZ34 LT1575 LT1577 P54C motherboard voltage regulator circuit
    Text: advertisement UltraFast Linear Regulator Eliminates All Bulk Tantalum and Electrolytic Output Capacitors Design Note 157 Anthony Bonte New LTC Regulator Controllers The LT1575/LT1577 family of controller ICs drives discrete N-channel MOSFETs and produces low dropout, UltraFastTM


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    PDF LT1575/LT1577 LT1577 1-800-4-LINEAR. dn157f 12v irlz44 regulator 5a 28v P55C CTX02 coiltronics IRFZ14 IRFZ34 LT1575 P54C motherboard voltage regulator circuit

    irfz34

    Abstract: diode sg 47
    Text: N-CHANNEL POWER MOSFETS IRFZ34/35 FEATURES • • • • • • • Lower R ds on Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability


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    PDF IRFZ34/35 IRFZ34 IRFZ35 diode sg 47

    IRFZ34

    Abstract: IRFZ30 irfz34 mosfets
    Text: IRFZ34/35 IRFZ30/32 N-CHANNEL POWER MOSFETS FEATURES • • • • • • • Lower Ros o n Improved inductive ruggedness Fast switching tim es Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high tem perature reliability


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    PDF IRFZ34/35 IRFZ30/32 IRFZ34 IRFZ35 IRFZ30 IRFZ32 irfz34 mosfets

    SSP60N06

    Abstract: irf630 irf640 SSP50N06 ssp15n06
    Text: MOSFETs FUNCTION GUIDE TO-220 N-CHANNEL Part Number IRFZ10 BVdss^V lD on)(A) 50 10.00 15.00 16.00 30.00 IRFZ20 SSP15N05 IRFZ30 IRFZ40 SSP50N05 SSP60N05 IRFZ14 IRFZ24 60 SSP15N06 IRFZ34 IRFZ44 SSP50N06 SSP60N06 IRF511 80 IRF521 IRF531 IRF541 IRF510 IRF520


    OCR Scan
    PDF O-220 IRFZ10 IRFZ20 SSP15N05 IRFZ30 IRFZ40 SSP50N05 SSP60N05 IRFZ14 IRFZ24 SSP60N06 irf630 irf640 SSP50N06 ssp15n06

    Untitled

    Abstract: No abstract text available
    Text: N-CHANNEL POWER MOSFETS IRFZ34/30 FEATURES • Lower R d s On • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Lower input capacitance • Extended safe operating area • Improved high tem perature reliability


    OCR Scan
    PDF IRFZ34/30 IRFZ34 IRFZ30 002fllÃ

    irfz34

    Abstract: IRFZ35 c439 diode diode C438
    Text: HE D | 4055452 000ßbö4 4 | Data Sheet No. PD-9.509A INTERNATIONAL RECTIFIER INTERNATIONAL RECTIFIER IÖR AVALANCHE AND dv/dt RATED 1 7 5 °C OPERATING TEM PERATURE HEXFET TRANSISTORS IRFZ34 IRFZ35 ;n N-CHANNEL Product Summary 60 Volt, 0.050 Ohm HEXFET


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    PDF IRFZ34 IRFZ35 T0-220AB C-439 IRFZ34, IRFZ35 T-39-13 c439 diode diode C438

    IRF34N

    Abstract: 1RFZ34N 1RFZ34 dioda rectifier IRFZ34N V145M 100MS IRF1010 VIQR9246 dioda 12B
    Text: PD-9.1278A • I If c W I 1 1 U V I V 1 i d l llORlRectifier PRELIMINARY _ IRFZ34 N HEXFET Power MOSFET • Advanced Process Technology • Dynamic dv/dt Rating • 175°C Operating Temperature • Fast Switching • Ease of Paralleling V dss


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    PDF IRFZ34N O-220 a9246 IRF34N 1RFZ34N 1RFZ34 dioda rectifier V145M 100MS IRF1010 VIQR9246 dioda 12B

    IRFZ30

    Abstract: irfz34 IRFZ35 IRFZ34 mosfet
    Text: S A M S UN G E L E C T R O N I C S INC b4E D • 7^4142 IRFZ34/35 IRFZ30/32 Ü Ü 1 2 44 S bbê ■ SHGK N-CHANNEL POWER MOSFETS FEATURES • • • • • • • Lower R d s ON Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure


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    PDF IRFZ34/35 IRFZ30/32 IRFZ34 IRFZ35 IRFZ30 IRFZ32 IRFZ34 mosfet

    irf1010 applications

    Abstract: IRF1010 IRFZ34N for irfz34n IRF1010N IRFZ34 replacement guide irfz34 mosfets *rfz34n
    Text: International T \ ¥7 T t t ic 1 H R e d i f i e r U E M l j l l 1 1 F !^ OT« INTERNA TIO NAL R E C T IF IE R C O R P. A PPLIC A TIO N S ENG. 233 KANSAS ST., EL SEGUNDO, CA 90245 TEL 310 322-3331 FAX (310)322-3332 IR ’S NEW FIFTH GENERATION PO W ER MOSFETS:


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    PDF IRFZ34N IRF1010N 390nC 540nC IRF1010 IRF1010N irf1010 applications for irfz34n IRFZ34 replacement guide irfz34 mosfets *rfz34n

    Untitled

    Abstract: No abstract text available
    Text: S A M S UN G E L E C T R O N I C S INC bHE D • T T b M l M S 0 0 1 2 4 2 5 fl?T ■ SM6K IRFSZ34/35 IRFSZ30/32 N-CHANNEL POWER MOSFETS FEATURES • • • • • • • Lower R ds <o n Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure


    OCR Scan
    PDF IRFSZ34/35 IRFSZ30/32 IRFSZ34 IRFSZ35 IRFSZ30 IRFSZ32 IRFSZ30

    IRFZ25

    Abstract: IRFZ12 50N06L IRFZ24 60N06 sp60n06
    Text: FUNCTION GUIDE POWER MOSFETs 1. SELECTION GUIDE TO-220 N-CHANNEL Part Number BVdss V ID(on)(A) RDS(on)( Q ) 50.00 5.90 8.00 7.20 14.00 15.00 15.00 25.00 25.00 30.00 35.00 35.00 35.00 60.00 0.30 0.30 0.20 0.12 0.15 0.10 0.07 0.07 0.05 0.04 0.035 0.028 0.018


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    PDF O-220 IRFZ12 IRLZ10 IRFZ10 IRFZ22 IRLZ20 IRFZ20 IRLZ30 IRFZ32 IRFZ30 IRFZ25 50N06L IRFZ24 60N06 sp60n06