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    Infineon Technologies AG IRFY9140C

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    International Rectifier IRFY9140CM

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    International Rectifier IRFY9140C

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    IRFY9140C Datasheets (8)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRFY9140C International Rectifier HEXFET Power Mosfet Original PDF
    IRFY9140C International Rectifier Power MOSFET Original PDF
    IRFY9140C Semelab P-Channel Power MOSFET for HI-REL Applications Original PDF
    IRFY9140C Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    IRFY9140CM International Rectifier Power MOSFET Original PDF
    IRFY9140CM International Rectifier HEXFET Power Mosfet Original PDF
    IRFY9140CM International Rectifier HEXFET Power Mosfet Original PDF
    IRFY9140CM Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF

    IRFY9140C Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    IRFY9140C

    Abstract: No abstract text available
    Text: IRFY9140C MECHANICAL DATA Dimensions in mm inches 4.83 (0.190) 5.08 (0.200) 0.89 (0.035) 1.14 (0.045) 3.56 (0.140) Dia. 3.81 (0.150) VDSS ID(cont) RDS(on) 10.41 (0.410) 10.92 (0.430) 13.38 (0.527) 13.64 (0.537) 16.38 (0.645) 16.89 (0.665) 10.41 (0.410) 10.67 (0.420)


    Original     		IRFY9140C 257AA -100V ABSOLUTE-48 IRFY9140C PDF

    IRFY9140C

    Abstract: IRFY9140CM
    Text: PD - 91294C POWER MOSFET THRU-HOLE TO-257AA IRFY9140C IRFY9140CM 100V, P-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number R DS(on) ID IRFY9140C 0.20 Ω -15.8A Eyelets Ceramic IRFY9140CM 0.20 Ω -15.8A Ceramic HEXFET® MOSFET technology is the key to International


    Original     		91294C O-257AA) IRFY9140C IRFY9140CM IRFY9140C, -200A/ -100V, IRFY9140C IRFY9140CM PDF

    HEXFET Power MOSFET P-Channel

    Abstract: IRFY9140C IRFY9140CM
    Text: Previous Datasheet Index Next Data Sheet Provisional Data Sheet No. PD 9.1294A IRFY9140CM HEXFET POWER MOSFET P-CHANNEL -100 Volt, 0.2Ω HEXFET Product Summary International Rectifier’s HEXFET technology is the key to its advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance combined with high transconductance.


    Original     		IRFY9140CM HEXFET Power MOSFET P-Channel IRFY9140C IRFY9140CM PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 91294D POWER MOSFET THRU-HOLE TO-257AA IRFY9140C, IRFY9140CM 100V, P-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number R DS(on) ID IRFY9140C 0.20 Ω -15.8A Eyelets Ceramic IRFY9140CM 0.20 Ω -15.8A Ceramic HEXFET® MOSFET technology is the key to International


    Original     		91294D O-257AA) IRFY9140C, IRFY9140CM IRFY9140C 5M-1994. O-257AA. PDF

    irf 640

    Abstract: IRF 640 mosfet IRF P CHANNEL MOSFET 10A 100V SEC IRF 640 TO-257AA IRFY9140C IRFY9140CM
    Text: PD - 91294D POWER MOSFET THRU-HOLE TO-257AA IRFY9140C, IRFY9140CM 100V, P-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number R DS(on) ID IRFY9140C 0.20 Ω -15.8A Eyelets Ceramic IRFY9140CM 0.20 Ω -15.8A Ceramic HEXFET® MOSFET technology is the key to International


    Original     		91294D O-257AA) IRFY9140C, IRFY9140CM IRFY9140C 5M-1994. O-257AA. irf 640 IRF 640 mosfet IRF P CHANNEL MOSFET 10A 100V SEC IRF 640 TO-257AA IRFY9140C IRFY9140CM PDF

    P-channel power mosfet irf

    Abstract: IRF P CHANNEL MOSFET 10A 100V IRFY9140C IRFY9140CM
    Text: PD - 91294B POWER MOSFET THRU-HOLE TO-257AA IRFY9140C,IRFY9140CM 100V, P-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number R DS(on) ID Eyelets IRFY9140C 0.20 Ω -15.8A Ceramic IRFY9140CM 0.20 Ω -15.8A Ceramic HEXFET® MOSFET technology is the key to International


    Original     		91294B O-257AA) IRFY9140C IRFY9140CM IRFY9140C IRFY9140C, -200A/ -100V, P-channel power mosfet irf IRF P CHANNEL MOSFET 10A 100V IRFY9140CM PDF

    IRFY9140C

    Abstract: IRFY9140CM
    Text: Provisional Data Sheet No. PD 9.1294A IRFY9140CM HEXFET POWER MOSFET P-CHANNEL -100 Volt, 0.2Ω HEXFET Product Summary International Rectifier’s HEXFET technology is the key to its advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance combined with high transconductance.


    Original     		IRFY9140CM IRFY9140C IRFY9140CM PDF

    IRF460

    Abstract: SMD TRANSISTOR MARKING k38 smd transistor k38 we 751002 s SMD-6C transistor smd k45 RAD-HARD igbt IRF3504 afl2805s manufactured by international rectifier 550-065
    Text: Aerospace and Defense Products Short Form Catalog 2007 Welcome to the Aerospace and Defense Products Short Form Catalog. Inside is an overview of our product line including product specific information. To learn more, visit our web site at irf.com where you will find technical documents, data sheets for all products, application notes, design tips, technical papers, application-specific information,


    Original     		30am-5 44-0-1737-2com DB8029C IRF460 SMD TRANSISTOR MARKING k38 smd transistor k38 we 751002 s SMD-6C transistor smd k45 RAD-HARD igbt IRF3504 afl2805s manufactured by international rectifier 550-065 PDF

    TRANSISTORS sec 537

    Abstract: No abstract text available
    Text: PD - 94197C POWER MOSFET THRU-HOLE TO-257AA IRFY9140, IRFY9140M 100V, P-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID Eyelets IRFY9140 0.20 Ω -15.8A Glass IRFY9140M 0.20 Ω -15.8A Glass HEXFET® MOSFET technology is the key to International


    Original     		94197C O-257AA) IRFY9140, IRFY9140M IRFY9140 5M-1994. O-257AA. TRANSISTORS sec 537 PDF

    IRFM9034

    Abstract: irh7c50se IRFM460 irhy IRFE310 international rectifier p JANSR2N7261
    Text: International Rectifier Government and Space Products BVDSS Part Number Channel V RDS(on) (Ω) PD @ TC = 25°C ID @ T =100°C C (A) ID @ T =25 C (A) Total Dose Rating Rads (Si) (W) Fax-on-Demand HEXFET Power MOSFETs to view a data sheet, click on the part number


    Original     		IRHE7110 IRHE7130 IRHE7230 IRHE8110 IRHE8130 IRHE8230 IRHE9130 IRHE9230 IRHG7110 IRHG6110 IRFM9034 irh7c50se IRFM460 irhy IRFE310 international rectifier p JANSR2N7261 PDF

    irf5n5210sc

    Abstract: IRHNA57064SCS IRHM597260 irf5n5210 irhna597160scs irhf7110scs IRHG57110 IRHNA57264SESCS 35CLQ045SCS 12CLQ150SCS
    Text: PD - 94246A IRHG567110 RADIATION HARDENED 100V, Combination 2N-2P-CHANNEL RAD-Hard HEXFET POWER MOSFET 4# TECHNOLOGY THRU-HOLE MO-036AB Product Summary Part Number IRHG567110 IRHG563110 IRHG567110 IRHG563110 Radiation Level RDS(on) 100K Rads (Si)


    Original     		4246A IRHG567110 MO-036AB) IRHG563110 MO-036AB O-254AA 22JGQ045SCV irf5n5210sc IRHNA57064SCS IRHM597260 irf5n5210 irhna597160scs irhf7110scs IRHG57110 IRHNA57264SESCS 35CLQ045SCS 12CLQ150SCS PDF

    10RIA10

    Abstract: HFA40HF120 irfm9034 10RIA100 10RIA120 10RIA20 10RIA40 10RIA60 JANSR2N7261 70HF
    Text: Index International Rectifier Government and Space Products Level of Quality Part Number Rectifiers Voltage Current CECC Issue Issue Assessment and CECC V (A) Specs Number Date 50 000 Screen Level Options Fax-on-Demand CECC-Qualifed, Europe Mfg. in Italy


    Original     		DO-203AA HFA40HF120 HFA40HF60 O-254AA HFA35HB120 HFA35HB120C HFA35HB60 HFA35HB60C O-258AA HFA45HC120C 10RIA10 HFA40HF120 irfm9034 10RIA100 10RIA120 10RIA20 10RIA40 10RIA60 JANSR2N7261 70HF PDF

    IRHNA57064SCS

    Abstract: IRHNJ597230SCS IRHNJ9130SCS IRHG6110SCS IRHY7434 IRHE57130SCS 8CLJQ045SCV IRHNJ57034SCS irfy9230 35CLQ045SCS
    Text: PD - 94046B RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-0.5 IRHNJ597230 200V, P-CHANNEL 4# TECHNOLOGY c Product Summary Part Number Radiation Level IRHNJ597230 100K Rads (Si) IRHNJ593230 300K Rads (Si) RDS(on) 0.505Ω 0.505Ω ID -8.0A -8.0A SMD-0.5


    Original     		94046B IRHNJ597230 IRHNJ593230 O-254AA 22JGQ045SCV 22GQ100SCV 25GQ045SCS IRHNA57064SCS IRHNJ597230SCS IRHNJ9130SCS IRHG6110SCS IRHY7434 IRHE57130SCS 8CLJQ045SCV IRHNJ57034SCS irfy9230 35CLQ045SCS PDF

    P-channel power mosfet irf

    Abstract: IRF P CHANNEL MOSFET 10A 100V IRFY9140 IRFY9140C IRFY9140CM IRFY9140M 150-TRt
    Text: PD - 94197 POWER MOSFET THRU-HOLE TO-257AA IRFY9140,IRFY9140M 100V, P-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID Eyelets IRFY9140 0.20 Ω -15.8A Glass IRFY9140M 0.20 Ω -15.8A Glass HEXFET® MOSFET technology is the key to International


    Original     		O-257AA) IRFY9140 IRFY9140M IRFY9140 IRFY9140, -200A/ -100V, O-257AA P-channel power mosfet irf IRF P CHANNEL MOSFET 10A 100V IRFY9140C IRFY9140CM IRFY9140M 150-TRt PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 94197B POWER MOSFET THRU-HOLE TO-257AA IRFY9140, IRFY9140M 100V, P-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID Eyelets IRFY9140 0.20 Ω -15.8A Glass IRFY9140M 0.20 Ω -15.8A Glass HEXFET® MOSFET technology is the key to International


    Original     		94197B O-257AA) IRFY9140 IRFY9140M IRFY9140, IRFY9140M 5M-1994. O-257AA. PDF

    Diode 400V 5A

    Abstract: lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN
    Text: PRODUCT 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 2N1482 2N1483 2N1483A 2N1484A 2N1485 2N1485A 2N1486 2N1486A 2N1613 2N1613L 2N1616 2N1617 2N1618 2N1711 2N1717 2N1721 2N1722 2N1724 2N1724A 2N1889 2N1890 2N1893 2N1893CSM 2N1893DCSM


    Original     		2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 Diode 400V 5A lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN PDF

    2N7550

    Abstract: 2N7549 2n7545 2N7476T1 smd 92112 2N7546 IRHNJ9130SCS 2N7471 2N7426 2N7468
    Text: Hi-Rel Products Shortform Hermetic MOSFETs High Voltage MOSFETs for PFC and Primary Switch Applications Hi-Rel Components Schottky and HEXFRED Products Hi-Rel Schottky Diodes Hi-Rel HEXFRED  Diodes Hi-Rel Linear and Switching Regulators Fixed Voltage Regulators


    Original     		PDF

    2N6764 JANTX

    Abstract: 91447 IR2113L
    Text: Government / Space Products Catalog of Available Documents Revised 5/11/99 www.irf.com IR ProCenter Fax-On-Demand 310 252-7100  Radiation-Hardened HEXFET Description Datasheets IRH7054 IRH7130 IRH7150 IRH7230 IRH7250 IRH7250SE IRHF7330SE IRHF7430SE IRH7450


    Original     		IRH7054 IRH7130 IRH7150 IRH7230 IRH7250 IRH7250SE IRHF7330SE IRHF7430SE IRH7450 IRH7450SE 2N6764 JANTX 91447 IR2113L PDF

    fet 500v 10A

    Abstract: 130NC IRFM044
    Text: Search Results Part number search for devices beginning "IRFM360" Datasheets are downloaded as Acrobat PDF files. Semelab Home Fet Products ID cont (A) PD (W) RDSS (Ω) CISS (pF) QG (nC) PRODUCT Polarity Package VDSS (V) IRFM360 N-Channel TO254 400V 23A


    Original     		IRFM360" IRFM360 IRFM360-JQR-B 4200pF 140nC 140nC IRFM044" IRFM044 IRFM044-JQR-B fet 500v 10A 130NC PDF

    2N6782 JANTX

    Abstract: 2N6758 JANTX 2N6756 JANTX 2N6766 JANTX 2N6792 JANTX 2N6796U 60022 2N7236 2n6806 jantx 2N6770 JANTX
    Text: Government / Space Products Catalog of Available Documents Revised 8/27/98 www.irf.com IR ProCenter Fax-On-Demand 310 252-7100  Radiation-Hardened HEXFET Document # Pages Date IRH7054 90883 5 Oct-96 IRH7150 90677 13 Oct-96 IRH7250 90697 13 Oct-96 IRH7450SE


    Original     		IRH7054 Oct-96 IRH7150 IRH7250 IRH7450SE Nov-96 IRH8054 2N6782 JANTX 2N6758 JANTX 2N6756 JANTX 2N6766 JANTX 2N6792 JANTX 2N6796U 60022 2N7236 2n6806 jantx 2N6770 JANTX PDF

    IRF P CHANNEL MOSFET 10A 100V

    Abstract: SEC IRF 640 IRFY9140 IRFY9140C IRFY9140CM IRFY9140M
    Text: PD - 94197C POWER MOSFET THRU-HOLE TO-257AA IRFY9140, IRFY9140M 100V, P-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID Eyelets IRFY9140 0.20 Ω -15.8A Glass IRFY9140M 0.20 Ω -15.8A Glass HEXFET® MOSFET technology is the key to International


    Original     		94197C O-257AA) IRFY9140, IRFY9140M IRFY9140 5M-1994. O-257AA. IRF P CHANNEL MOSFET 10A 100V SEC IRF 640 IRFY9140 IRFY9140C IRFY9140CM IRFY9140M PDF

    Untitled

    Abstract: No abstract text available
    Text: mi =Vr= INI SEM E IRFY9140C LAB MECHANICAL DATA P-CHANNEL POWER MOSFET FOR HI-REL APPLICATIONS D im e nsio ns in mm inches 4 . 8 3 (0 .1 9 0 ) V DSS -1 0 0 V -1 2 A ^D(cont) 0.21ft ^D S (on) FEATURES • HERMETICALLY SEALED TO -257AA METAL PACKAGE • SIMPLE DRIVE REQUIREMENTS


    OCR Scan     		IRFY9140C -257AA PDF

    Untitled

    Abstract: No abstract text available
    Text: I . ,• I Provisional Datasheet No. PD 9.1294A International IGR Rectifier IRFY9140CM HEXFET8 POWER MOSFET P-CHANNEL -100 Volt, 0.2£2 HEXFET Product Summary International Rectifier’s HEXFET technology is the key to its advanced line of power MOSFET transistors.The effi­


    OCR Scan     		IRFY9140CM SS452 PDF

    irfm9034

    Abstract: No abstract text available
    Text: 1 I n t e r n a t io n a l R e c t if ie r Government and Space Products Pvt Numb« 2 (3) bvdss (Vote) RDS(on) (Ohms) ID« Tc*2T (Amps) 10« TC=100“ (Amps) Pd O Tc«25° (Watts) Fax-onOamand Number Case Styl«, (Cas* (Min») (1) HEXFET Power MOSFETs Hermetic Package, N- and P-Channel


    OCR Scan     		IRFAF30 IRFAF40 IRFAF50 IRFAG30 IRFAG40 IRFAG50 IRF9130 JANTX2N6804 JANTXV2N6804 IRF9140 irfm9034 PDF