IRFIZ44N EQUIVALENT Search Results

IRFIZ44N EQUIVALENT Result Highlights (5)

Part	ECAD Model	Manufacturer	Description	Download	Buy
TMP89FS60AUG		Toshiba Electronic Devices & Storage Corporation	8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP64-P-1010-0.50E
TMP89FS63AUG		Toshiba Electronic Devices & Storage Corporation	8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP52-P-1010-0.65
TMP89FS60BFG		Toshiba Electronic Devices & Storage Corporation	8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP64-1414-0.80-002
TMP89FS63BUG		Toshiba Electronic Devices & Storage Corporation	8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP52-1010-0.65-002
TMP89FS62AUG		Toshiba Electronic Devices & Storage Corporation	8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP44-P-1010-0.80A

IRFIZ44N EQUIVALENT Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
B1370 Abstract: R B1370 IRFz44n equivalent MOSFET IRFZ44N for irfz44n IRF1010 MOSFET TO-220 IRFIZ44N Text: PD - 9.1403B IRFIZ44N l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated HEXFET Power MOSFET D VDSS = 55V RDS on = 0.024Ω G ID = 31A S Description Fifth Generation HEXFETs from International Rectifier	Original	PDF	1403B IRFIZ44N O-220 B1370 R B1370 IRFz44n equivalent MOSFET IRFZ44N for irfz44n IRF1010 MOSFET TO-220 IRFIZ44N
IRFIZ44N equivalent Abstract: IRF1010 IRFI840G IRFIZ44N IRFZ44N IRFz44n equivalent Text: Previous Datasheet Index Next Data Sheet PD 9.1403 IRFIZ44N PRELIMINARY HEXFET Power MOSFET l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated D U VDSS = 55V	Original	PDF	IRFIZ44N IRFIZ44N equivalent IRF1010 IRFI840G IRFIZ44N IRFZ44N IRFz44n equivalent
IRFz44n equivalent Abstract: IRF1010 IRFI840G IRFIZ44N IRFZ44N 12v input 55v output using irfz44n circuit IRFZ44 IRFIZ44N equivalent irfi840 Text: PD 9.1403 IRFIZ44N PRELIMINARY HEXFET Power MOSFET l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated D U VDSS = 55V RDS on = 0.024Ω G ID = 28A S Description	Original	PDF	IRFIZ44N O-220 IRFz44n equivalent IRF1010 IRFI840G IRFIZ44N IRFZ44N 12v input 55v output using irfz44n circuit IRFZ44 IRFIZ44N equivalent irfi840
IRFz44n equivalent Abstract: datasheet of irfz44n IRF1010 IRFI840G IRFIZ44N IRFZ44N Text: PD - 9.1403B IRFIZ44N l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated HEXFET Power MOSFET D VDSS = 55V RDS on = 0.024Ω G ID = 31A S Description Fifth Generation HEXFETs from International Rectifier	Original	PDF	1403B IRFIZ44N O-220 IRFz44n equivalent datasheet of irfz44n IRF1010 IRFI840G IRFIZ44N IRFZ44N
Untitled Abstract: No abstract text available Text: PD - 9.1403B IRFIZ44N HEXFET Power MOSFET l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated D VDSS = 55V RDS on = 0.024Ω G ID = 31A S Description Fifth Generation HEXFETs from International Rectifier	Original	PDF	1403B IRFIZ44N O-220
IRFz44n equivalent Abstract: IRFIZ44N IRFZ44N IRFIZ44N equivalent irf 630 Text: PD - 9.1403A IRFIZ44N HEXFET Power MOSFET l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated D VDSS = 55V RDS on = 0.024Ω G ID = 31A S Description Fifth Generation HEXFETs from International Rectifier	Original	PDF	IRFIZ44N O-220 IRFz44n equivalent IRFIZ44N IRFZ44N IRFIZ44N equivalent irf 630
IRFZ44G Abstract: IRF840G IRFZ34G IRFBC30G IRF9540G IRF640G IRFBC40G IRFP140 equivalent transistor 9721 transistor IRFP140N Text: Quarterly Reliability Report for HEXFET Assembly IRGB Number 8 January 1999 Prepared by QA Services Page 1 of 60 Contents Prepared by QA Services 1 Introduction 2 Reliability Information 3 Environmental Test Results 4 Environmental Test Conditions/Schematics	Original	PDF	IRFIZ34N IRFIZ44N IRFIZ48N IRFI1010N IRFI520N IRFI530N IRFI1310N IRLI3705N IRLIZ24N IRLIZ44N IRFZ44G IRF840G IRFZ34G IRFBC30G IRF9540G IRF640G IRFBC40G IRFP140 equivalent transistor 9721 transistor IRFP140N
irf1010e equivalent Abstract: irfp250n equivalent IRF744 equivalent IRFP260n equivalent IRF9540N equivalent IRF730A equivalent IRFBE30 equivalent irfp260n IRF4905 equivalent IRFU9120 equivalent Text: International Rectifier MOSFETs MOSFETs Continued HEXFETª Power MOSFETs Ñ TO-220AB (continued) N-Channel (continued) Mfr.Õs Type IRFZ24N* IRF1010E* IRFZ44E* IRFZ34E* IRFZ14* IRF2807* IRF3710* IRF1310N* IRF540N* IRF530N* IRF520N* IRF510* IRF3415* IRF640N	Original	PDF	O-220AB O-220 IRFZ24N* IRFIZ24N IRFD024 IRF1010E* IRFI1310N IRFD014 IRFZ44E* IRFI540N irf1010e equivalent irfp250n equivalent IRF744 equivalent IRFP260n equivalent IRF9540N equivalent IRF730A equivalent IRFBE30 equivalent irfp260n IRF4905 equivalent IRFU9120 equivalent
5.1 home theatre schematic diagram Abstract: subwoofer 1000 watts amplifier 12v 400W AUDIO AMPLIFIER CIRCUIT DIAGRAM 12 volts 50 watt subwoofer circuit diagram 5.1 subwoofer ic type amplifier circuit diagram 400 watt subwoofer circuit diagram high subwoofer 1000 watts amplifier 100w audio amplifier circuit diagram class D 400w mono amplifier circuit 12v 50 watt subwoofer circuit diagram Text: AUDIOMAX AMPLIFIERS DESIGN RESOURCE AUDIOMAX DESIGN RESOURCE RESOURCE ANAN-16 L I N F I N I T Y Copyright  2000 Rev. 1.0, 2001-11-12 D I V I S I O N Microsemi Linfinity Microelectronics Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570	Original	PDF	ANAN-16 5.1 home theatre schematic diagram subwoofer 1000 watts amplifier 12v 400W AUDIO AMPLIFIER CIRCUIT DIAGRAM 12 volts 50 watt subwoofer circuit diagram 5.1 subwoofer ic type amplifier circuit diagram 400 watt subwoofer circuit diagram high subwoofer 1000 watts amplifier 100w audio amplifier circuit diagram class D 400w mono amplifier circuit 12v 50 watt subwoofer circuit diagram
IRFP460Z Abstract: IRF3205 application IRF3205 equivalent power MOSFET IRFP460z irfp4004 IRF3808 equivalent irfz44v equivalent IRF1405 equivalent IRLL014N IRF3205 Text: Switch and I/O Reliability Report March, 2003 International Rectifier Table Of Contents 1.0 Introduction 2.0 Environmental Stress And Failure Modes 3.0 The Matrix Qualification Philosophy 4.0 Summary Of Long Term Reliability Test 4.1 Transistors 4.1.1 HTRB	Original	PDF	O-220 IRFP460Z IRF3205 application IRF3205 equivalent power MOSFET IRFP460z irfp4004 IRF3808 equivalent irfz44v equivalent IRF1405 equivalent IRLL014N IRF3205
sumida 94V-0 Abstract: inverter using irfz44n MOSFET IRF9430 IRF7414 irfp460 dc welding circuit diagram IRFP264 inverter circuits IRFP450 inverter Three phase inverter using irfp450 mosfet Diagram Sumida ul94v-0 inverter IRF 544 N MOSFET Text: International Rectifier The IGBT SIP & HEXPak Navigator Effective 8 September, EXISTING Products NEW Products UPCOMING Products POTENTIAL Products released to production in last 6-9 months to be released within next 3-4 months no current plans. see bus.mgmt.	Original	PDF	IRFK2D054 IRFK2F054 CPV362M4U CPV363M4U CPV364M4U CPV362M4F CPV363M4F CPV364M4F CPV362M4K CPV363M4K sumida 94V-0 inverter using irfz44n MOSFET IRF9430 IRF7414 irfp460 dc welding circuit diagram IRFP264 inverter circuits IRFP450 inverter Three phase inverter using irfp450 mosfet Diagram Sumida ul94v-0 inverter IRF 544 N MOSFET
IRFz44n equivalent Abstract: diode c341 for irfz44n IRFIZ44N equivalent IRFZ44N Text: PD - 9.1403A International IGR Rectifier IRFIZ44N HEXFET Power M O SFET • Advanced Process Technology • Isolated Package • High Voltage Isolation = 2.5KVRMS ® • Sink to Lead Creepage Dist. = 4.8mm • Fully Avalanche Rated Voss = 55V Ros on = 0.024Q	OCR Scan	PDF	IRFIZ44N O-220 IRFz44n equivalent diode c341 for irfz44n IRFIZ44N equivalent IRFZ44N
Untitled Abstract: No abstract text available Text: PD 9.1403 International ¡^Rectifier IRFIZ44N PRELIMINARY H EXFET Power M O S F E T Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated Vdss = 55 V R ü S o n = Id =	OCR Scan	PDF	IRFIZ44N 0D23bc
FZ44N Abstract: IRFIZ44N equivalent fz44 Text: PD - 9.1403A International IÖR Rectifier IRFIZ44N HEXFET Power MOSFET Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS <S> Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated V dss = 55 V FÍDS on = 0 .0 2 4 Í 2 lD = 3 1 A	OCR Scan	PDF	IRFIZ44N FZ44N IRFIZ44N equivalent fz44