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    IRFF32 Price and Stock

    Rochester Electronics LLC IRFF322

    N-CHANNEL POWER MOSFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRFF322 Bulk 500
    • 1 -
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    • 1000 $0.65
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    New Jersey Semiconductor Products, Inc. IRFF320

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics IRFF320 1,702 1
    • 1 $19.2
    • 10 $19.2
    • 100 $16.9843
    • 1000 $15.744
    • 10000 $15.744
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    New Jersey Semiconductor Products Inc IRFF320

    HEXFET TRANSISTOR, TO-39
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components IRFF320 1,361
    • 1 $20.8
    • 10 $20.8
    • 100 $20.8
    • 1000 $16
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    Harris Semiconductor IRFF323

    POWER FIELD-EFFECT TRANSISTOR, 2A I(D), 350V, 2.5OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-205AF
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components IRFF323 20
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    International Rectifier IRFF320

    HEXFET TRANSISTOR, TO-39
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components IRFF320 18
    • 1 $38.4
    • 10 $36.48
    • 100 $34.56
    • 1000 $34.56
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    Find more IRFF32 price and stock on Findchips.com

    IRFF32 Datasheets (58)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRFF320 International Rectifier HEXFET Transistor Original PDF
    IRFF320 Intersil 2.5A, 400V, 1.800 ?, N-Channel Power MOSFET Original PDF
    IRFF320 Semelab N-Channel MOSFET in a Hermetically Sealed TO39 Metal Package Original PDF
    IRFF320 General Electric Power Transistor Data Book 1985 Scan PDF
    IRFF320 Harris Semiconductor Power MOSFET Data Book 1990 Scan PDF
    IRFF320 International Rectifier TO-39 Package N-Channel HEXFET Scan PDF
    IRFF320 International Rectifier N-Channel Power MOSFETs Scan PDF
    IRFF320 International Rectifier TO-39 N-Channel HEXFET Power MOSFETs Scan PDF
    IRFF320 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    IRFF320 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    IRFF320 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    IRFF320 Unknown FET Data Book Scan PDF
    IRFF320 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    IRFF320 Siliconix N-Channel Enhancement Mode Transistors TO-205AF Scan PDF
    IRFF320 Vishay Siliconix Shortform Siliconix Datasheet Short Form PDF
    IRFF320R Harris Semiconductor Power MOSFET Data Book 1990 Scan PDF
    IRFF320R International Rectifier Rugged Series Power MOSFETs - N-Channel Scan PDF
    IRFF320R Unknown Shortform Datasheet & Cross References Data Short Form PDF
    IRFF321 General Electric Power Transistor Data Book 1985 Scan PDF
    IRFF321 Harris Semiconductor Power MOSFET Data Book 1990 Scan PDF

    IRFF32 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: PD -90428D REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE TO-205AF IRFF320 JANTX2N6792 JANTXV2N6792 REF:MIL-PRF-19500/555 400V, N-CHANNEL Product Summary Part Number IRFF320 BVDSS RDS(on) 400V 1.8Ω ID 2.0A ® The HEXFET technology is the key to International Rectifier’s


    Original     		PDF -90428D O-205AF) IRFF320 JANTX2N6792 JANTXV2N6792 MIL-PRF-19500/555 O-205AF

    IRFF320

    Abstract: TA17404 TB334
    Text: IRFF320 Data Sheet January 2002 2.5A, 400V, 1.800 Ohm, N-Channel Power MOSFET Features • 2.5A, 400V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of


    Original     		PDF IRFF320 TA17404. IRFF320 TA17404 TB334

    mosfet vgs 5v

    Abstract: n-channel mosfet transistor IRFF320 mosfet MOSFET QG IRF710B
    Text: Discrete MOSFET TO-39 RDS ON Max (Ohms) @ VGS = Products VDS Min. (V) 10V 4.5V 2.5V 1.8V Qg(nC) Typ. @VGS=5V (Note) use IRF710B - - - - Config. Maximum Rating ID (A) PD (W) - - TO-39 N-Channel IRFF320 400 Single Note: Unless otherwise specified, QG is given @ 5VGS for MOSFETs with ratings of 30VDS and below.


    Original     		PDF IRF710B IRFF320 30VDS 10VGS 30VDS. mosfet vgs 5v n-channel mosfet transistor IRFF320 mosfet MOSFET QG IRF710B

    IRFF320

    Abstract: JANTX2N6792 JANTXV2N6792
    Text: PD -90428C IRFF320 JANTX2N6792 JANTXV2N6792 REF:MIL-PRF-19500/555 400V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-205AF Product Summary Part Number IRFF320 BVDSS 400V RDS(on) 1.8Ω ID 2.0A  The HEXFET technology is the key to International


    Original     		PDF -90428C IRFF320 JANTX2N6792 JANTXV2N6792 MIL-PRF-19500/555 O-205AF) T252-7105 IRFF320 JANTX2N6792 JANTXV2N6792

    Untitled

    Abstract: No abstract text available
    Text: IRFF320 Data Sheet Title FF3 bt 5A, 0V, 00 m, March 1999 2.5A, 400V, 1.800 Ohm, N-Channel Power MOSFET Features This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of


    Original     		PDF IRFF320 IRFF320 O-205AF TB334

    Untitled

    Abstract: No abstract text available
    Text: IRFF320 2N6792 MECHANICAL DATA Dimensions in mm inches 8.64 (0.34) 9.40 (0.37) N-CHANNEL ENHANCEMENT MODE TRANSISTOR 8.01 (0.315) 9.01 (0.355) 4.06 (0.16) 4.57 (0.18) 12.70 (0.500) min. 0.89 max. (0.035) FEATURES 0.41 (0.016) 0.53 (0.021) dia. • V(BR)DSS = 400V


    Original     		PDF IRFF320 2N6792 O-205AF)

    Untitled

    Abstract: No abstract text available
    Text: IRFF321 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)350 V(BR)GSS (V)20 I(D) Max. (A)2.5# I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)10# @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)20# Minimum Operating Temp (øC)-55õ


    Original     		PDF IRFF321

    Untitled

    Abstract: No abstract text available
    Text: IRFF323 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)350 V(BR)GSS (V)20 I(D) Max. (A)2.0# I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)8.0# @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)20# Minimum Operating Temp (øC)-55õ


    Original     		PDF IRFF323

    IRFF320

    Abstract: No abstract text available
    Text: IRFF320 Dimensions in mm inches . N-Channel MOSFET in a Hermetically sealed TO39 Metal Package. 8.64 (0.34) 9.40 (0.37) 8.01 (0.315) 9.01 (0.355) 4.06 (0.16) 4.57 (0.18) 12.70 (0.500) min. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. N-Channel MOSFET.


    Original     		PDF IRFF320 O205AF) 11-Oct-02 IRFF320

    IRFF323

    Abstract: No abstract text available
    Text: IRFF320, IRFF321, IRFF322, IRFF323 S E M I C O N D U C T O R 2.0A and 2.5A, 350V and 400V, 1.8 and 2.5 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 2.0A and 2.5A, 350V to 400V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power


    Original     		PDF IRFF320, IRFF321, IRFF322, IRFF323 TA17404. IRFF323

    Untitled

    Abstract: No abstract text available
    Text: IRFF322 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)400 V(BR)GSS (V)20 I(D) Max. (A)2.0# I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)8.0# @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)20# Minimum Operating Temp (øC)-55õ


    Original     		PDF IRFF322

    IRF 534

    Abstract: IRFF320 JANTX2N6792 JANTXV2N6792
    Text: PD -90428D REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE TO-205AF IRFF320 JANTX2N6792 JANTXV2N6792 REF:MIL-PRF-19500/555 400V, N-CHANNEL Product Summary Part Number IRFF320 BVDSS RDS(on) 400V 1.8Ω ID 2.0A ® The HEXFET technology is the key to International Rectifier’s


    Original     		PDF -90428D O-205AF) IRFF320 JANTX2N6792 JANTXV2N6792 MIL-PRF-19500/555 O-205AF IRF 534 IRFF320 JANTX2N6792 JANTXV2N6792

    IRFF320

    Abstract: TA17404 TB334
    Text: IRFF320 Data Sheet March 1999 2.5A, 400V, 1.800 Ohm, N-Channel Power MOSFET • 2.5A, 400V Formerly developmental type TA17404. Ordering Information PACKAGE 1890.4 Features This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed,


    Original     		PDF IRFF320 TA17404. IRFF320 TA17404 TB334

    Untitled

    Abstract: No abstract text available
    Text: IRFF320 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)400 V(BR)GSS (V)20 I(D) Max. (A)2.0 I(DM) Max. (A) Pulsed I(D)1.25 @Temp (øC)100# IDM Max (@25øC Amb)10 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)20# Minimum Operating Temp (øC)-55


    Original     		PDF IRFF320

    DM 321

    Abstract: F320 IRFF320 IRFF321 IRFF322 IRFF323
    Text: 1ÛE-D SILICONIX INC Û254735 0014017 4 • IRFF320/321/322/323 • □ r"StlÌCG S ilic o n_ ix J lM ■ in ii c o rp o ra te d N-Channel Enhancement Mode Transistors T - 3 R -O ^ TO-2Q5AF BOTTOM VIEW PRODUCT SUMMARY PART NUMBER V BR|DSS IRFF320 " V Id (A


    OCR Scan     		PDF 25H735 RFF320/3217322/323 IRFF320 IRFF321 IRFF322 IRFF323 O-205AF FF321 FF322 IRFF32 DM 321 F320

    irff323

    Abstract: IRFF322 8 A diode
    Text: HST FIELD EFFECT POWER TRANSISTOR IRFF322,323 2.0 AMPERES 400, 350 VOLTS RDS ON = 2.5 ft Preliminary This series of N -C h a n n e l E n h a n c e m e n t-m o d e P ow er M O SFETs utilizes G E ’s advanced Power D M O S technology to achieve low on-resistance with excellent device rugged­


    OCR Scan     		PDF IRFF322 IRFF323 8 A diode

    SMM70N05

    Abstract: irff31z MOD200A SMM11P20 SMM70N10 SMP2P20 251G FF323 IRFF310 SILICONIX 4800
    Text: - H f M tt % ± Vd s or € $ Vg s Vd g V 1R F F 310 IRFF311 IRFF312 IRFF313 1RFF320 IRFF321 IRFF322 IRFF323 IRFF330 IRFF331 IRFF332 IRFF333 IR FF420 IRFF421 IRFF422 IRFF423 IR F M 3 0 IRFF431 IRFF432 IR FF433 IR F F 9 1 10 1R F F 9 1 11 1R F F 9 112 IR FF9113


    OCR Scan     		PDF IRFF310 O-205AF FF312 FF322 FF323 2520P10 SMM60N05 T0-204AE SMM70N05 irff31z MOD200A SMM11P20 SMM70N10 SMP2P20 251G FF323 IRFF310 SILICONIX 4800

    ifr 350 mosfet

    Abstract: IRFF323 IRFF320 IRFF321 IRFF322
    Text: Standard Power MOSFETs- IRFF320, IRFF321, IRFF322, IRFF323 File Number N-Channel Enhancement-Mode Power Field-Effecl Transistors 2.0A and 2.5A, 350V - 400V rDsion = 1-80 and 2.50 N-CHANNEL ENHANCEMENT MODE o Features: • SOA is power-dissipation limited


    OCR Scan     		PDF IRFF320, IRFF321, IRFF322, IRFF323 IRFF322 IRFF323 FF320 ifr 350 mosfet IRFF320 IRFF321

    Untitled

    Abstract: No abstract text available
    Text: •i 43G5571 O D S m t S MTS ■ 33 HARRIS HAS IR FF320/321/322/323 IRFF320R/321R /322R /323R N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 Features Package TO-205AF • 2.0A and 2.5A, 350V - 400V • rDS On = 1-8 fi and 2 .5 0 • Single Pulse Avalanche Energy Rated*


    OCR Scan     		PDF 43G5571 FF320/321/322/323 IRFF320R/321R /322R /323R O-205AF IRFF320, IRFF321, IRFF322, IRFF323

    SMM70N06

    Abstract: SMM70N05 SMP2P20 SMM60N05 SILICONIX 4800 SMM11P20 IBFF333 IRFF313 SMD10P05L IRFF320
    Text: - 324 - f ft A £ Ta=25‘C Vds Vg s or * Vd g Id t M € *± € * IRFF312 IRFF313 IRFF320 IRFF321 IRFF322 IRFF323 IRFF33Q IRFF331 IRFF332 IRFF333 IRFF430 IRFF431 IRFF432 IRFF433 MOD1QOA/B/C MOD200A/B/C MQD400A/B/C MOD5QOA/B/C SMD10P05 SMD10P05L SMD15NQ5


    OCR Scan     		PDF IRFF31Z IRFF313 IRFF320 2020P10 SMM60N05 T0-204AE SMM70N05 O-204AE SMM70N06 SMM70N10 SMP2P20 SILICONIX 4800 SMM11P20 IBFF333 SMD10P05L

    Untitled

    Abstract: No abstract text available
    Text: 23 H A R R IS IBFF320/321/322/323 IRFF320R/321R/322R/323R N-Channel Power M O SFETs Avalanche Energy Rated* August 1991 Package F e a tu re s T 0 -2 0 5 A F • 2.0A and 2.5A, 350V - 400V • ros on = 1-80 and 2.5fi • Single Pulse Avalanche Energy Rated*


    OCR Scan     		PDF IRFF320R/321R/322R/323R FF320, FF321, FF322, FF320R FF321R FF322R FF323R

    Untitled

    Abstract: No abstract text available
    Text: H A R R IRFF320, IRFF321, IRFF322, IRFF323 S s e m i c o n d u c t o r 2.0A and 2.5A, 350V and 400V, 1.8 and 2.5 Ohm, N-Channel Power MOSFETs July 1998 Features Description • 2.0A and 2.5A, 350V and 400V • High Input Impedance These are N-Channel enhancem ent mode silicon gate


    OCR Scan     		PDF IRFF320, IRFF321, IRFF322, IRFF323

    IRFF320R

    Abstract: IRFF323R IRFF321R IRFF322R
    Text: Rugged Power MOSFETs_ IRFF320R, IRFF321R, IRFF322R, IRFF323R File Number 2028 Avalanche Energy Rated N-Channel Power MOSFETs 2-OA a nd 2.5A, 350V -400V ros on = 1 .8 0 a nd 2 .5 0 N-CHANNEL ENHANCEMENT MODE D Feature«: • ■ ■ ■


    OCR Scan     		PDF IRFF320R, IRFF321R, IRFF322R, IRFF323R 50V-400V IRFF322R IRFF323R 92CS-426SO IRFF320R IRFF321R

    TO-254

    Abstract: T0-204 IRF450 equivalent
    Text: CT'Sificonix .X J P in c o r p o r a te d Industry Standard Military MOSFETs Package Equivalent Commercial Part Number 0.18 75 T0-204 IRF130 542 9.0 0.40 75 T0-204 IRF230 542 400 5.5 1.0 75 TO-204 IRF330 542 500 4.5 1.5 75 TO-204 IRF430 542 Part Number V BRJDSS


    OCR Scan     		PDF 2N6756 2N6758 2N6760 2N6762 2N6764 2N6766 2N6768 2N6770 2N6788 2N6790 TO-254 T0-204 IRF450 equivalent