Untitled
Abstract: No abstract text available
Text: IRFBC30, SiHFBC30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • 600 RDS(on) (Ω) VGS = 10 V 2.2 Qg (Max.) (nC) 31 Qgs (nC) 4.6 Qgd (nC) 17 Configuration Single RoHS* COMPLIANT Third generation Power MOSFETs from Vishay provide the
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IRFBC30,
SiHFBC30
O-220AB
O-220AB
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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SSH6N80
Abstract: rfp60n06 IRF3205 IR BUK417-500AE SFP70N03 BUZ91A 2SK2717 STMicroelectronics BUZ22 IXFH13N50
Text: Sales type BUZ10 BUZ11 BUZ11A BUZ71 BUZ71A BUZ72A BUZ80A IRF520 IRF530 IRF540 IRF620 IRF630 IRF640 IRF730 IRF740 IRF820 IRF830 IRF840 IRFBC30 IRFBC40 IRFZ40 MTP3055E STB10NA40 STB10NB20 STB10NB50 STB11NB40 STB15N25 STB16NB25 STB18N20 STB19NB20 STB30N10 STB36NE03L
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BUZ10
BUZ11
BUZ11A
BUZ71
BUZ71A
BUZ72A
BUZ80A
IRF520
IRF530
IRF540
SSH6N80
rfp60n06
IRF3205 IR
BUK417-500AE
SFP70N03
BUZ91A
2SK2717
STMicroelectronics
BUZ22
IXFH13N50
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22AB
Abstract: No abstract text available
Text: IRFBC30, SiHFBC30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • 600 RDS(on) (Ω) VGS = 10 V 2.2 Qg (Max.) (nC) 31 Qgs (nC) 4.6 Qgd (nC) 17 Configuration Single RoHS* COMPLIANT Third generation Power MOSFETs from Vishay provide the
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IRFBC30,
SiHFBC30
2002/95/EC
O-220AB
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
22AB
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Untitled
Abstract: No abstract text available
Text: IRFBC30, SiHFBC30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • 600 RDS(on) (Ω) VGS = 10 V 2.2 Qg (Max.) (nC) 31 Qgs (nC) 4.6 Qgd (nC) 17 Configuration Single RoHS* COMPLIANT Third generation Power MOSFETs from Vishay provide the
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IRFBC30,
SiHFBC30
O-220AB
O-220AB
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: IRFBC30, SiHFBC30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • 600 RDS(on) (Ω) VGS = 10 V 2.2 Qg (Max.) (nC) 31 Qgs (nC) 4.6 Qgd (nC) 17 Configuration Single RoHS* COMPLIANT Third generation Power MOSFETs from Vishay provide the
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IRFBC30,
SiHFBC30
2002/95/EC
O-220AB
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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IRFBC30
Abstract: irfbc30 vishay
Text: IRFBC30, SiHFBC30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • 600 RDS(on) (Ω) VGS = 10 V 2.2 Qg (Max.) (nC) 31 Qgs (nC) 4.6 Qgd (nC) 17 Configuration Single RoHS* COMPLIANT Third generation Power MOSFETs from Vishay provide the
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IRFBC30,
SiHFBC30
O-220
O-220
18-Jul-08
IRFBC30
irfbc30 vishay
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Untitled
Abstract: No abstract text available
Text: IRFBC30, SiHFBC30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • 600 RDS(on) (Ω) VGS = 10 V 2.2 Qg (Max.) (nC) 31 Qgs (nC) 4.6 Qgd (nC) 17 Configuration Single RoHS* COMPLIANT Third generation Power MOSFETs from Vishay provide the
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IRFBC30,
SiHFBC30
2002/95/EC
O-220AB
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: IRFBC30, SiHFBC30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • 600 RDS(on) (Ω) VGS = 10 V 2.2 Qg (Max.) (nC) 31 Qgs (nC) 4.6 Qgd (nC) 17 Configuration Single RoHS* COMPLIANT Third generation Power MOSFETs from Vishay provide the
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IRFBC30,
SiHFBC30
O-220AB
O-220AB
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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IRFBC30
Abstract: No abstract text available
Text: IRFBC30, SiHFBC30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • 600 RDS(on) (Ω) VGS = 10 V 2.2 Qg (Max.) (nC) 31 Qgs (nC) 4.6 Qgd (nC) 17 Configuration Single RoHS* COMPLIANT Third generation Power MOSFETs from Vishay provide the
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IRFBC30,
SiHFBC30
O-220AB
O-220AB
11-Mar-11
IRFBC30
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Untitled
Abstract: No abstract text available
Text: IRFBC30, SiHFBC30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • 600 RDS(on) (Ω) VGS = 10 V 2.2 Qg (Max.) (nC) 31 Qgs (nC) 4.6 Qgd (nC) 17 Configuration Single RoHS* COMPLIANT Third generation Power MOSFETs from Vishay provide the
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PDF
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IRFBC30,
SiHFBC30
O-220AB
O-220AB
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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Untitled
Abstract: No abstract text available
Text: IRFBC30, SiHFBC30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • 600 RDS(on) (Ω) VGS = 10 V 2.2 Qg (Max.) (nC) 31 Qgs (nC) 4.6 Qgd (nC) 17 Configuration Single RoHS* COMPLIANT Third generation Power MOSFETs from Vishay provide the
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PDF
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IRFBC30,
SiHFBC30
O-220AB
O-220AB
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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IRFBC30
Abstract: No abstract text available
Text: IRFBC30, SiHFBC30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • 600 RDS(on) (Ω) VGS = 10 V 2.2 Qg (Max.) (nC) 31 Qgs (nC) 4.6 Qgd (nC) 17 Configuration Single RoHS* COMPLIANT Third generation Power MOSFETs from Vishay provide the
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IRFBC30,
SiHFBC30
O-220
12-Mar-07
IRFBC30
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SiHFBC30L
Abstract: No abstract text available
Text: IRFBC30S, SiHFBC30S, IRFBC30L, SiHFBC30L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount (IRFBC30S, SiHFBC30S) • Low-Profile Through-Hole (IRFBC30L, SiHFBC30L) • Available in Tape and Reel (IRFBC30S, SiHFBC30S)
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IRFBC30S,
SiHFBC30S
IRFBC30L,
SiHFBC30L
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SiHFBC30L
Abstract: irfbc30spbf IRFBC30 IRFBC30L IRFBC30S SiHFBC30L-E3 SiHFBC30S SiHFBC30S-E3
Text: IRFBC30S, SiHFBC30S, IRFBC30L, SiHFBC30L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Surface Mount (IRFBC30S, SiHFBC30S) • Low-Profile Through-Hole (IRFBC30L, SiHFBC30L) • Available in Tape and Reel (IRFBC30S, SiHFBC30S) • Dynamic dV/dt Rating
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IRFBC30S,
SiHFBC30S
IRFBC30L,
SiHFBC30L
irfbc30spbf
IRFBC30
IRFBC30L
IRFBC30S
SiHFBC30L-E3
SiHFBC30S-E3
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SiHFBC30L
Abstract: IRFBC30 AN-994 IRFBC30L IRFBC30S SiHFBC30L-E3 SiHFBC30S SiHFBC30S-E3
Text: IRFBC30S, SiHFBC30S, IRFBC30L, SiHFBC30L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Surface Mount (IRFBC30S, SiHFBC30S) • Low-Profile Through-Hole (IRFBC30L, SiHFBC30L) • Available in Tape and Reel (IRFBC30S, SiHFBC30S) • Dynamic dV/dt Rating
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IRFBC30S,
SiHFBC30S
IRFBC30L,
SiHFBC30L
IRFBC30
AN-994
IRFBC30L
IRFBC30S
SiHFBC30L-E3
SiHFBC30S-E3
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SiHFBC30L
Abstract: IRFBC30L IRFBC30S SiHFBC30L-E3 SiHFBC30S
Text: IRFBC30S, SiHFBC30S, IRFBC30L, SiHFBC30L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount (IRFBC30S, SiHFBC30S) • Low-Profile Through-Hole (IRFBC30L, SiHFBC30L) • Available in Tape and Reel (IRFBC30S, SiHFBC30S)
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IRFBC30S,
SiHFBC30S
IRFBC30L,
SiHFBC30L
IRFBC30L
IRFBC30S
SiHFBC30L-E3
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SiHFBC30L
Abstract: No abstract text available
Text: IRFBC30S, SiHFBC30S, IRFBC30L, SiHFBC30L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount (IRFBC30S, SiHFBC30S) • Low-Profile Through-Hole (IRFBC30L, SiHFBC30L) • Available in Tape and Reel (IRFBC30S, SiHFBC30S)
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IRFBC30S,
SiHFBC30S
IRFBC30L,
SiHFBC30L
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SiHFBC30L
Abstract: No abstract text available
Text: IRFBC30S, SiHFBC30S, IRFBC30L, SiHFBC30L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount (IRFBC30S, SiHFBC30S) • Low-Profile Through-Hole (IRFBC30L, SiHFBC30L) • Available in Tape and Reel (IRFBC30S, SiHFBC30S)
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IRFBC30S,
SiHFBC30S
IRFBC30L,
SiHFBC30L
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SiHFBC30L
Abstract: No abstract text available
Text: IRFBC30S, SiHFBC30S, IRFBC30L, SiHFBC30L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount (IRFBC30S, SiHFBC30S) • Low-Profile Through-Hole (IRFBC30L, SiHFBC30L) • Available in Tape and Reel (IRFBC30S, SiHFBC30S)
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IRFBC30S,
SiHFBC30S
IRFBC30L,
SiHFBC30L
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SiHFBC30L
Abstract: No abstract text available
Text: IRFBC30S, SiHFBC30S, IRFBC30L, SiHFBC30L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount (IRFBC30S, SiHFBC30S) • Low-Profile Through-Hole (IRFBC30L, SiHFBC30L) • Available in Tape and Reel (IRFBC30S, SiHFBC30S)
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IRFBC30S,
SiHFBC30S
IRFBC30L,
SiHFBC30L
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fqp60n06
Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640
Text: MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL HITACHI ON-SEMI PHILIPS INFINEON SIEMENS TEMIC / VISHAY TOSHIBA IR IXYS ST Nearest Preferred Supplier
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STP7NB40
STT3PF30L
STD20NE03L
STP60NE03L-12
STP60NE03L-10
STP40NF03L
STP80NE03L-06
STS4DPF30L
fqp60n06
spb32N03l
rfp60n06
SSH6N80
FQP50N10
FSD6680
STP55NF06 AND ITS EQUIVALENT
SFP70N03
HGTG*N60A4D
irf630 irf640
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fqp60n06
Abstract: SSH6N80 spb32N03l SMP60N03-10L SSP80N06A IRF540 application rfp60n06 fsd9933a 2SK790 IRFZ30
Text: 电子元器件系列 wwww.rf-china.com RF-Micom co.,Ltd EMail:[email protected] Sale Phone:86-592-5713956 MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL
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STP7NB40
STT3PF30L
STD20NE03L
STP60NE03L-12
STP60NE03L-10
STP40NF03L
STP80NE03L-06
STS4DPF30L
fqp60n06
SSH6N80
spb32N03l
SMP60N03-10L
SSP80N06A
IRF540 application
rfp60n06
fsd9933a
2SK790
IRFZ30
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topswitch StackFET
Abstract: TOP243Y StackFET equivalent diode for sb260 TOP243y circuits EF20 core EPCOS DER-105 EF20 TRANSFORMER Epcos EF20 TRANSFORMER EF20 epcos
Text: Design Example Report Title 19.3 W Wide Range Flyback Power Supply using TOP243Y Specification Input: 207 – 400 VAC Outputs: +14 V / 1.2 A; +5 V / 0.5 A Application Oven Control Author Power Integrations Applications Department Document Number DER-105 Date
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OP243Y
DER-105
EcoSmar89
topswitch StackFET
TOP243Y
StackFET
equivalent diode for sb260
TOP243y circuits
EF20 core EPCOS
DER-105
EF20 TRANSFORMER
Epcos EF20 TRANSFORMER
EF20 epcos
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Untitled
Abstract: No abstract text available
Text: PD - 9.1015 IRFBC30S/L PRELIMINARY HEXFET Power MOSFET l l l l l l l Surface Mount IRFBC30S Low-profile through-hole (IRFBC30L) Available in Tape & Reel (IRFBC30S) Dynamic dv/dt Rating 150°C Operating Temperature Fast Switching Fully Avalanche Rated D
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IRFBC30S/L
IRFBC30S)
IRFBC30L)
08-Mar-07
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