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    IRF7316 Price and Stock

    Infineon Technologies AG IRF7316TRPBF

    MOSFET 2P-CH 30V 4.9A 8SO
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    DigiKey IRF7316TRPBF Cut Tape 39,523 1
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    IRF7316TRPBF Reel 36,000 4,000
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    TME IRF7316TRPBF 7,635 1
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    UMW IRF7316TR

    MOSFET 2P-CH 30V 4.9A 8SOP
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    DigiKey IRF7316TR Cut Tape 3,000 1
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    IRF7316TR Reel 3,000 3,000
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    IRF7316TR Digi-Reel 3,000 1
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    Infineon Technologies AG IRF7316GTRPBF

    MOSFET 2P-CH 30V 4.9A 8SO
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    DigiKey IRF7316GTRPBF Cut Tape 2,290 1
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    IRF7316GTRPBF Digi-Reel 2,290 1
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    IRF7316GTRPBF Reel 4,000
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    Infineon Technologies AG AUIRF7316QTR

    MOSFET 2P-CH 30V 8SOIC
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    DigiKey AUIRF7316QTR Cut Tape 298 1
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    Rochester Electronics AUIRF7316QTR 16,892 1
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    Infineon Technologies AG IRF7316PBF

    MOSFET 2P-CH 30V 4.9A 8SO
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    IRF7316 Datasheets (11)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRF7316 International Rectifier HEXFET Power MOSFET Original PDF
    IRF7316 International Rectifier HEXFET Power MOSFET Original PDF
    IRF7316 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    IRF7316 International Rectifier Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Transistor, Field Effect, Dual P-Channel, Logic Level, -30V, -4.9A, Pkg SO-8 Scan PDF
    IRF7316GTRPBF International Rectifier FETs - Arrays, Discrete Semiconductor Products, MOSFET P-CH DUAL 30V 4.9A 8-SOIC Original PDF
    IRF7316PBF International Rectifier Original PDF
    IRF7316QPBF International Rectifier HEXFET Power MOSFET Original PDF
    IRF7316QTRPBF International Rectifier -30V Dual P-Channel HEXFET Power MOSFET in a LeadFree SO-8 -package; Similar to IRF7316QTRPBF shipped on Tape and Reel Original PDF
    IRF7316S International Rectifier HEXFET Power Mosfet Original PDF
    IRF7316TR International Rectifier Dual P-channel MOSFET, 30V, 4.9A Original PDF
    IRF7316TRPBF International Rectifier Original PDF

    IRF7316 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    f7101

    Abstract: IRF7316 91505B
    Text: PD - 9.1505B IRF7316 l l l l l HEXFET Power MOSFET Generation V Technology Ultra Low On-Resistance Dual P-Channel MOSFET Surface Mount Fully Avalanche Rated S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 VDSS = -30V RDS on = 0.058Ω Top View Description Fifth Generation HEXFETs from International Rectifier


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    1505B IRF7316 EIA-481 EIA-541. f7101 IRF7316 91505B PDF

    IRF7316

    Abstract: D 304 x
    Text: Previous Datasheet Index Next Data Sheet PD - 9.1505 IRF7316 PRELIMINARY HEXFET Power MOSFET l l l l l l Generation V Technology Ultra Low On-Resistance Dual P-Channel MOSFET Surface Mount Very Low Gate Charge and Switching Losses Fully Avalanche Rated 1


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    IRF7316 IRF7316 D 304 x PDF

    top datasheet download 1505a

    Abstract: IRF7316
    Text: PD - 9.1505A IRF7316 PRELIMINARY HEXFET Power MOSFET l l l l l Generation V Technology Ultra Low On-Resistance Dual P-Channel MOSFET Surface Mount Fully Avalanche Rated 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 S1 VDSS = -30V RDS on = 0.058Ω T op V iew Description


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    IRF7316 top datasheet download 1505a IRF7316 PDF

    MOSFET IRF 380

    Abstract: No abstract text available
    Text: IRF7316PbF-1 VDS RDS on max (@VGS = -10V) -30 V 0.058 Ω 23 nC -4.9 A Qg (typical) ID (@TA = 25°C) HEXFET Power MOSFET S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 SO-8 Top View Features Industry-standard pinout SO-8 Package Compatible with Existing Surface Mount Techniques


    Original
    IRF7316PbF-1 IRF7316TRPbF-1 D-020D MOSFET IRF 380 PDF

    IRF7101

    Abstract: No abstract text available
    Text: PD - 96126A IRF7316QPbF l l l l l l l HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance Dual P- Channel MOSFET Surface Mount Available in Tape & Reel 150°C Operating Temperature Lead-Free S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 VDSS = -30V


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    6126A IRF7316QPbF ex461 EIA-481 EIA-541. IRF7101 PDF

    D 1497

    Abstract: IRF7101 MS-012AA
    Text: IRF7316PbF Electrical Characteristics @ TJ = 25°C unless otherwise specified Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient V(BR)DSS RDS(on) Static Drain-to-Source On-Resistance VGS(th) gfs Gate Threshold Voltage


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    IRF7316PbF EIA-481 EIA-541. D 1497 IRF7101 MS-012AA PDF

    Untitled

    Abstract: No abstract text available
    Text: IRF7316QPbF Electrical Characteristics @ TJ = 25°C unless otherwise specified Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient V(BR)DSS RDS(on) Static Drain-to-Source On-Resistance VGS(th) gfs Gate Threshold Voltage


    Original
    IRF7316QPbF EIA-481 EIA-541. PDF

    IRF7316GPBF

    Abstract: No abstract text available
    Text: PD - 96255 IRF7316GPbF HEXFET Power MOSFET l l l l l l l Generation V Technology Ultra Low On-Resistance Dual P-Channel MOSFET Surface Mount Fully Avalanche Rated Lead-Free Halogen-Free S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 VDSS = -30V RDS on = 0.058Ω


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    IRF7316GPbF EIA-481 EIA-541. IRF7316GPBF PDF

    IRF P CHANNEL MOSFET

    Abstract: HEXFET SO-8 mosfet p channel irf MOSFET SO-8 PN channel MOSFET 10A
    Text: PD - 96126 IRF7316QPbF l l l l l l l l HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance Dual P- Channel MOSFET Surface Mount Available in Tape & Reel 150°C Operating Temperature Automotive [Q101] Qualified Lead-Free S1 1 8 D1 G1 2


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    IRF7316QPbF EIA-481 EIA-541. IRF P CHANNEL MOSFET HEXFET SO-8 mosfet p channel irf MOSFET SO-8 PN channel MOSFET 10A PDF

    9aa marking

    Abstract: f7101 IRF7101 MS-012AA d 1497
    Text: PD - 95182 IRF7316PbF l l l l l l HEXFET Power MOSFET Generation V Technology Ultra Low On-Resistance Dual P-Channel MOSFET Surface Mount Fully Avalanche Rated Lead-Free S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 VDSS = -30V RDS on = 0.058Ω Top View Description


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    IRF7316PbF EIA-481 EIA-541. 9aa marking f7101 IRF7101 MS-012AA d 1497 PDF

    IRF7316

    Abstract: No abstract text available
    Text: PD - 9.1505A IRF7316 PRELIMINARY HEXFET Power MOSFET l l l l l Generation V Technology Ultra Low On-Resistance Dual P-Channel MOSFET Surface Mount Fully Avalanche Rated 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 S1 VDSS = -30V RDS on = 0.058Ω T op V iew Description


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    IRF7316 IRF7316 PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 95182 IRF7316PbF HEXFET Power MOSFET l l l l l l Generation V Technology Ultra Low On-Resistance Dual P-Channel MOSFET Surface Mount Fully Avalanche Rated Lead-Free S1 G1 S2 G2 1 8 D1 2 7 D1 3 6 D2 4 5 D2 VDSS = -30V RDS on = 0.058Ω Top View Description


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    IRF7316PbF EIA-481 EIA-541. PDF

    sumida 94V-0

    Abstract: inverter using irfz44n MOSFET IRF9430 IRF7414 irfp460 dc welding circuit diagram IRFP264 inverter circuits IRFP450 inverter Three phase inverter using irfp450 mosfet Diagram Sumida ul94v-0 inverter IRF 544 N MOSFET
    Text: International Rectifier The IGBT SIP & HEXPak Navigator Effective 8 September, EXISTING Products NEW Products UPCOMING Products POTENTIAL Products released to production in last 6-9 months to be released within next 3-4 months no current plans. see bus.mgmt.


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    IRFK2D054 IRFK2F054 CPV362M4U CPV363M4U CPV364M4U CPV362M4F CPV363M4F CPV364M4F CPV362M4K CPV363M4K sumida 94V-0 inverter using irfz44n MOSFET IRF9430 IRF7414 irfp460 dc welding circuit diagram IRFP264 inverter circuits IRFP450 inverter Three phase inverter using irfp450 mosfet Diagram Sumida ul94v-0 inverter IRF 544 N MOSFET PDF

    IRGKI165F06

    Abstract: IRGDDN600M06 IRGDDN600K06 IRF7311 IRGNIN075 IRFK6H054 IRF7601 IRLI2203N IRLML2803 IRLML5103
    Text: Index HEXFET Power MOSFETs Part Number International Rectifier ID R DS on V(BR)DSS Continuous On-State Drain-to-Source Drain Current Breakdown Voltage Resistance 25°C (Ω) (A) (V) ID Continuous Drain Current 70°C (A) RθJ A Max Thermal Resistance (°C/W)


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    OT-23) IRLML2402* IRLML2803 IRLML5103 IRLML6302* IRGKI165F06 IRGDDN600M06 IRGDDN600K06 IRF7311 IRGNIN075 IRFK6H054 IRF7601 IRLI2203N IRLML2803 IRLML5103 PDF

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


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    P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS PDF

    IRF9953PBF

    Abstract: IRF7306 IRF7316 IRF7506 MS-012AA
    Text: PD - 95477 IRF9953PbF HEXFET Power MOSFET Generation V Technology l Ultra Low On-Resistance l Dual P-Channel MOSFET l Surface Mount l Very Low Gate Charge and Switching Losses l Fully Avalanche Rated l Lead-Free Description l S1 1 8 D1 G1 2 7 D1 S2 3 6 D2


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    IRF9953PbF EIA-481 EIA-541. IRF9953PBF IRF7306 IRF7316 IRF7506 MS-012AA PDF

    irlml2404

    Abstract: transistor 9529 IRF7603 IRF7389 IRF7103 irlml2402 Small-Outline SMD Reliability Report 704618 HEXFET SO-8 irf7404 datasheet
    Text: Small-Outline SMD Reliability Report Page 1 Table of Contents Section I. II. III. IV. V. VI. VII. VIII. IX. X. Page Executive Summary Introduction Procedure Reliability Tests - Table I Electrical Tests - Table II Test Purposes & Common Failure Mechanisms Reliability Data


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    PDF

    irfb4115

    Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
    Text: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .


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    element-14 F155-6A F155-10A F165-15A F175-25A irfb4115 BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor PDF

    Arduino Mega2560

    Abstract: 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l
    Text: ND3% BASE1 XXXX2108-0010-1-P 10 TSQ: 3001 CMS: CMS-USM TS host OP: NN COMP: 15-07-11 Hour: 13:07 TS:TS date TS time MCUS, MPUS, DSPS & DEVELOPMENT TOOLS Find Datasheets Online 8-BIT MCUS & DEVELOPMENT TOOLS 1 PSoC 3 DEVELOPMENT KITS ARDUINO MCU DEVLOPMENT PLATFORM


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    CY8C38 CY8C29 incl795 12T9797 12T9804 12T9803 12T9800 12T9802 12T9801 12T9805 Arduino Mega2560 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l PDF

    IRF7316

    Abstract: tfr 586
    Text: International lOR Rectifier PD - 9.1505A IRF7316 PRELIMINARY HEXFET Power MOSFET Generation V Technology Ultra Low On-Resistance Dual P-Channel MOSFET Surface Mount Fully Avalanche Rated V q ss = -30V Rds oh = 0.058Q Description Fifth Generation HEXFETs from international Rectifier


    OCR Scan
    IRF7316 EIA-S41. IRF7316 tfr 586 PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 9.1505A International I R Rectifier IRF7316 PRELIMINARY HEXFET Power MOSFET Generation V Technology Ultra Low On-Resistance Dual P-Channel MOSFET Surface Mount Fully Avalanche Rated S IQ E ji-i / p T Voss = -30V RDS on = 0.058Q Top View Description


    OCR Scan
    IRF7316 DD2b234 PDF

    IRF7316

    Abstract: No abstract text available
    Text: International Rectifier I R PD - 9.1505A IRF7316 PRELIMINARY HEXFET Power MOSFET Generation V Technology Ultra Low On-Resistance Dual P-Channel MOSFET Surface Mount Fully Avalanche Rated Vdss = -30 V Ros on = 0.058Q Description Fifth Generation HEXFET® Power MOSFETs from International Rectifier


    OCR Scan
    IRF7316 C-134 C-135 IRF7316 PDF

    Untitled

    Abstract: No abstract text available
    Text: PD-9.1560 International Rectifier IOR IRF9953 PRELIMINARY HEXFET Power M O S F E T • Generation V T echnology • Ultra Low On-Resistance • Dual P-Channel MOSFET • Surface Mount • Very Low Gate Charge and Switching Losses • Fully Avalanche Rated


    OCR Scan
    IRF9953 S5452 0G25TR7 PDF

    91-330

    Abstract: 1RF7413 91613 irf7311 91330 IRF9410
    Text: International Iö R Rectifier HEXFET Power MOSFETs *D •d V {BR DSS Drain-to-Source "DS on) Continuous On-State Drain Current Breakdown Part Resistance Voltage 2S°C Number (V) (A) (« I Continuous Drain Current 70° (A) R PD Max. Thermal Max. Power Resistance 1 Dissipation 1


    OCR Scan
    IRF9410 1RF7413A IRF7413 IRF7311 IRF7333 IRF9956 IRF73I3 91-330 1RF7413 91613 91330 PDF