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    IRFN5210

    Abstract: No abstract text available
    Text: IRFN5210 MECHANICAL DATA Dimensions in mm inches P–CHANNEL POWER MOSFET 4 .1 4 (0 .1 6 3 ) 3 .8 4 (0 .1 5 1 ) VDSS ID(cont) RDS(on) 3 .6 0 (0 .1 4 2 ) M a x . 3 1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1 9 ) 1 1 0 .6 9 (0 .4 2 1 ) 1 0 .3 9 (0 .4 0 9 ) 0 .7 6


    Original     		PDF IRFN5210 -100V 300ms, IRFN5210

    IRFN5210

    Abstract: IRF5210SMD
    Text: IRFN5210 MECHANICAL DATA Dimensions in mm inches P–CHANNEL POWER MOSFET 4 .1 4 (0 .1 6 3 ) 3 .8 4 (0 .1 5 1 ) VDSS ID(cont) RDS(on) 3 .6 0 (0 .1 4 2 ) M a x . 3 1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1 9 ) 1 1 0 .6 9 (0 .4 2 1 ) 1 0 .3 9 (0 .4 0 9 ) 0 .7 6


    Original     		PDF IRFN5210 -100V 300ms, IRFN5210 IRF5210SMD

    Untitled

    Abstract: No abstract text available
    Text: P-CHANNEL POWER MOSFET IRFN5210 • Low RDS on Power MOSFET Transistor, Fully Avalanche Rated • Hermetic Ceramic Surface Mount package • Designed For Fast Switching Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)


    Original     		PDF IRFN5210 -100V -120A 780ms) O-276AB) IRF5210SMD IRF5210SMD

    uc 5587

    Abstract: IRFN5210 LE17
    Text: P-CHANNEL POWER MOSFET IRFN5210 • Low RDS on Power MOSFET Transistor, Fully Avalanche Rated • Hermetic Ceramic Surface Mount package • Designed For Fast Switching Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)


    Original     		PDF IRFN5210 -100V -120A 780mJ O-276AB) IRF5210SMD IRF5210SMD uc 5587 IRFN5210 LE17