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    IRF121 Search Results

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    IRF121 Price and Stock

    Rochester Electronics LLC IRF121-0001

    9.2A, 80V, 0.27OHM, N CHANNEL MO
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRF121-0001 Bulk 500
    • 1 -
    • 10 -
    • 100 -
    • 1000 $0.79
    • 10000 $0.79
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    New Jersey Semiconductor Products, Inc. IRF121

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics IRF121 1,463 1
    • 1 $11.25
    • 10 $8.4375
    • 100 $6.75
    • 1000 $6.4687
    • 10000 $6.4687
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    Vishay Siliconix IRF121

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics IRF121 5
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    New Jersey Semiconductor Products Inc IRF121

    Electronic Component
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components IRF121 1,170
    • 1 $15
    • 10 $15
    • 100 $15
    • 1000 $7.875
    • 10000 $7.875
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    International Rectifier IRF121

    Electronic Component
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components IRF121 3
    • 1 $15
    • 10 $11.25
    • 100 $11.25
    • 1000 $11.25
    • 10000 $11.25
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    Find more IRF121 price and stock on Findchips.com

    IRF121 Datasheets (15)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRF121 Intersil 8.0A and 9.2A, 80V and 100V, 0.27 and 0.36 ?, N-Channel, Power MOSFETs Original PDF
    IRF121 Fairchild Semiconductor N-Channel Power MOSFETs, 11 A, 60-100 V Scan PDF
    IRF121 General Electric N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 32A. Scan PDF
    IRF121 Harris Semiconductor Power MOSFET Data Book 1990 Scan PDF
    IRF121 International Rectifier N-Channel Power MOSFETs Scan PDF
    IRF121 International Rectifier TO-39 / TO-3 N-Channel HEXFET Power MOSFETs Scan PDF
    IRF121 Motorola European Master Selection Guide 1986 Scan PDF
    IRF121 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    IRF121 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    IRF121 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    IRF121 Unknown FET Data Book Scan PDF
    IRF121 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    IRF121 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    IRF121 Samsung Electronics N-CHANNEL POWER MOSFETS Scan PDF
    IRF121 Siliconix MOSPOWER Design Data Book 1983 Scan PDF

    IRF121 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    IRF120

    Abstract: irf122 irf123
    Text: IRF120, IRF121, IRF122, IRF123 S E M I C O N D U C T O R 8.0A and 9.2A, 80V and 100V, 0.27 and 0.36 Ohm, N-Channel, Power MOSFETs October 1997 Features Description • 8.0A and 9.2A, 80V and 100V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power


    Original     		IRF120, IRF121, IRF122, IRF123 TA09594. IRF123 IRF120 irf122 PDF

    IRF120

    Abstract: irf121 IRF122 IRF123 TB334
    Text: IRF120, IRF121, IRF122, IRF123 Semiconductor 8.0A and 9.2A, 80V and 100V, 0.27 and 0.36 Ohm, N-Channel, Power MOSFETs October 1997 Features Description • 8.0A and 9.2A, 80V and 100V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power


    Original     		IRF120, IRF121, IRF122, IRF123 IRF120 irf121 IRF122 IRF123 TB334 PDF

    sn76131

    Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
    Text: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157


    Original     		2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 sn76131 tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B PDF

    irf121

    Abstract: IRF120 IRF123
    Text: iH A R R is IRF120, IRF121, IRF122, IRF123 8.0A and 9.2A, 80V and 100V, 0.27 and 0.36 Ohm, N-Channel, Power MOSFETs O cto be r 1997 Features Description • 8.0A and 9.2A, 80V and 100V • High Input Im pedance T h e se are N -C hannel e n h a n ce m e n t m ode silicon gate


    OCR Scan     		IRF120, IRF121, IRF122, IRF123 RF123 irf121 IRF120 IRF123 PDF

    OA 207 B diode

    Abstract: IRF120 IRFI20 dioda 30 Ampere irf121 IRF122 IRF123 IRFt20
    Text: 3875081 G E SOLID _STATE_~üï DE 3A7S0Ö1 DDlflEb4 □ f o T~ 3 J - // - Standard PowerMOSFETs IRF120, IRF121, IRF122, IRF123 File Number 1565 Power MOS Field-Effect Transistors


    OCR Scan     		IRF120, IRF121, IRF122, IRF123 0V-100V IRF122 IRF123 OA 207 B diode IRF120 IRFI20 dioda 30 Ampere irf121 IRFt20 PDF

    IRF123

    Abstract: IRF120 IRF1 CQ 1565 RT irf121 IRF122 RF123 IRF1Z0
    Text: Standard Power MOSFETs- IRF120, IRF121, IRF122, IRF123 File Number 1565 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors N-C HANNEL EN HANCEM ENT MODE 7.0A and 8.0A, 60V-100V


    OCR Scan     		IRF120, IRF121, IRF122, IRF123 0V-100V IRF122 IRF120 IRF1 CQ 1565 RT irf121 RF123 IRF1Z0 PDF

    irf113

    Abstract: IRF111 IRFI30 1RF48 IRF224 IRF48 1RF220 1RF9Z32 IR 310A IRF035
    Text: - 250 - m € tt € Ta=25<1C f t Vds Vgs I d P d or * /CH * /CH 4- Vdg If 1RF9Z32 IRF48 IRF034 IRFQ35 1RF044 IRF045 1RF120 IRF121 IRF122 IRF123 IRFI30 IRF131 IRF132 IRFI33 IRF14Û IRF141 IRFI42 IRF143 IRF150 IRF151 IRF152 IRF153 IRF220 IRF221 IRF222 IRF223


    OCR Scan     		1RF9Z32 O-220AB 1RF48 IRF034 irf222 irf223 irf224 O-204AA irf225 irf113 IRF111 IRFI30 IRF48 1RF220 IR 310A IRF035 PDF

    Untitled

    Abstract: No abstract text available
    Text: IRF120, IRF121 IRF122, IRF 123 31 HARRIS N-Channel Enhancem ent-M ode Power Field-Effect Transistors August 1991 Package Features T 0 -2 0 4 A A • 8.0A and 9.2A , 8 0 V - 100V BOTTOM VIEW • rD S on = 0 .2 7 f l and 0 .3 6 0 SOURCE • S O A is P ow er-D issip atio n Limited


    OCR Scan     		IRF120, IRF121 IRF122, PDF

    Untitled

    Abstract: No abstract text available
    Text: IRF120, IRF121, IRF122, IRF123 HARRIS S E M I C O N D U C T O R 8.0A and 9.2A, 80V and 100V, 0.27 and 0.36 Ohm, N-Channel, Power MOSFETs October 1997 Description Features 8.0A and 9.2A, 80V and 100V Majority Carrier Device These are N-Channel enhancement mode silicon gate


    OCR Scan     		IRF120, IRF121, IRF122, IRF123 RF122, PDF

    blf544b

    Abstract: IRF224 IRF48 IRF9110 usb pre amplifier circuit diagram IRF035 irf113 IRF034 IRF123 blf245
    Text: - 250 - m € tt € f Ta=25<1C t Vds Vg s or 4- Vdg Id If 1RF9Z32 IRF48 IRF034 IRFQ35 1RF044 IRF045 1RF120 IRF121 IRF122 IRF123 IRFI30 IRF131 IRF132 IRFI33 IRF14Û IRF141 IRFI42 IRF143 IRF150 IRF151 IRF152 IRF153 IRF220 IRF221 IRF222 IRF223 IRF224 IRF225


    OCR Scan     		1RF9Z32 O-220AB 1RF48 IRF034 OT-268 BIF548 OT-262 IRF9Z10 O-220 blf544b IRF224 IRF48 IRF9110 usb pre amplifier circuit diagram IRF035 irf113 IRF123 blf245 PDF

    irf121

    Abstract: IRF123 367AL irf120 312H IRF122 IW120
    Text: Data Sheet No. PD-9.312H I«R INTERNATIONAL RECTIFIER REPETITIVE AVALANCHE AND dv/dt RATED* LOWER ON STATE RESISTANCE, 175°C OPERATING TEMPERATURE HEXFET TRANSISTORS IR F I 2 IRF121 IRF122 NCHANNEL IRF123 100 Volt, 0.27 Ohm HEXFET T0-204AA TO-3 Hermetic Package


    OCR Scan     		IRF121 T0-204AA IRF120, IRF121, IRF122, IRF123 irf121 367AL irf120 312H IRF122 IW120 PDF

    SFN106B3

    Abstract: No abstract text available
    Text: 6TC ^ 0T 2 96 8368602 S O L ITRON_DEVICES JN C 0i "‘" v' rb l DE | a 3 L f l b G S □ 0 0 0 2 clb S _ D E V IC E S . INC. T —39—11 SFM06B3 POWER l\S0S DEVICE 60V/8A) N Channel, TO-3 Package, IRF121 Equivalent The new Solitron Power MOS technology combines the efficient


    OCR Scan     		SFN106B3 50/XF/450V HP214A SFN106B3 PDF

    IRF120

    Abstract: IRF122
    Text: HE D I Data Sheet No. PD-9.312H 40 55452 □001 04 2 2 | T - 3 f - n INTERNATIONAL RECTIFIER INTERNATIONAL RECTIFIER IÖR REPETITIVE AVALANCHE AND dv/dt RATED* LOWER ON STATE RESISTANCE, 175°C OPERATING TEMPERATURE HEXFET TRANSISTORS IR F 1 2 0 IR F 1 2 1


    OCR Scan     		T0-204AA IRF120, IRF121, IRF122, IRF123 IRF120 IRF122 PDF

    MTM20N08

    Abstract: MTM35N06 IRF141 IRF143 MTM10N06 MTM55N10 MTM35N05 MTM60N05 IRF150 MTM10N08
    Text: POWER TRANSISTORS — TMOS METAL continued Metal TMOS Power MOSFETs — TO-204AA (continued) CASE 1-04 and CASE 1-05 @ ID VBR(DSS) (Volts) Min (Ohms) Max (Amp) 100 0.055 20 0.04 27.5 0.5 4 80 rDS(on) Device 0.4 40 150 55 250 MTM8N08 8 75 0.33 5 MTM10N08


    OCR Scan     		O-204AA IRF150* MTM55N10 MTM8N08 MTM8P08* MTM10N08 MTM12P08* MTM12N08 MTM20N08 MTM25N08Â MTM35N06 IRF141 IRF143 MTM10N06 MTM55N10 MTM35N05 MTM60N05 IRF150 PDF

    BUZ171

    Abstract: TO-236-AA buz90 BUZ80A BUZ84A BUZ10 BUZ11 buzh F133 251C
    Text: - 272 - f m % *± m * Vd s or £ t V £ Vg s Vd g V (V) %i fê (Ta=25,C ) ÎD Pd * /CH * /CH (A) (W) (nA) Vg s th) Id s s ÎGSS Vg s (V) (UA) Vd s (V) min max (V) (V) % 14 (Ta=25,C ) b(on) Ciss gfs Vg s (V) (Q> Id (A) Vg s (V) *typ (A) *typ (S) 3.0 1.0 6.0


    OCR Scan     		BSI07A O-226kk BS170 O-226AA BSS123 O-236AA O-220AB BUZ171 O-220ftB irf120 TO-236-AA buz90 BUZ80A BUZ84A BUZ10 BUZ11 buzh F133 251C PDF

    2N6155

    Abstract: BUZ23 SIEMENS siemens Ni 1000 4900 SIEMENS BUZ10 BUZ54 BUZ11 BUZ24 BSS92 BUZ64
    Text: - 314 - f M % tt € BSS92 6SS100 BSStOI SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS P N N BUZ6Û BUZ64 BUZZI BUZ72A BUZ73A BUZ74A BUZ76A BUZ80 8UZ211 2N6659 2N6660 2N6661 2N6TS5 2N67 56 f- + SIEMENS SIEMENS SIEMENS SIEMENS


    OCR Scan     		SSS6N60 O-220 8SS89 BSS92 8SS100 O-220AB BUZ171 O-220ftB irf120 to-204aa 2N6155 BUZ23 SIEMENS siemens Ni 1000 4900 SIEMENS BUZ10 BUZ54 BUZ11 BUZ24 BUZ64 PDF

    BUZ171

    Abstract: 8UZ11 SILICONIX t02G BUZ10 BUP67 BUP68 BUP69 BUP70 BUP71
    Text: - 318 - f * A Vd s m £ tt ft Vg s %l ts Ta=25*C Id Pd Vg s (th) Id s s I g ss or € % m 4# tos(on) Vp:>= 14 (Ta=25<C ) Ip(on) Ciss g fs Coss Vd g * /CH * /CH (V) (A) (IV) V g s =0 (max) max min (nA) 500 ± 4 0 ±4 . 47 100 ±100 ±30 1000 500 3 6 1 2 10


    OCR Scan     		BUP67 O-204AA BUP68 T0-204AA BUP69 O-220AB BUZ171 O-220ftB irf120 to-204aa 8UZ11 SILICONIX t02G BUZ10 BUP70 BUP71 PDF

    1RF820

    Abstract: VN64GA VN2410M IRF340 IRF350 IRF440 IRF450 IRF740 IRF820 IRF840
    Text: Ü Ü A C D ^ U / C D M i v i a Dr/\W i iv i v ^ i v T T k iv r i i i i i v t i v u v i w i C A lA A ^ / \ r f^ .n \M é g ^ i ^ v i v i w u iv i^ 1-2 MOSPOWER Prime Product Selector Guide *2 0 0 °C RATING I i Packages: u BVqss Volts 450-500 TO-3 TO-220


    OCR Scan     		O-220 O-237 O-202 IRF450 IRF840 IRF440 VN5001D/IRF830 VNP002A* IRF820 VN5001A/IRF430 1RF820 VN64GA VN2410M IRF340 IRF350 IRF740 PDF

    VN64GA

    Abstract: IRF733 2N6658 IRF120 IRF122 IRF130 IRF132 IRF140 IRF142 IRF150
    Text: MOSPOWER Selector Guide MOSPOWER Selector Guide continued N-Channel MOSPOWER (Continued) Device FiC ^ T ' u TO-3 TO-22QAB Breakdown Voltage (Volts) rDS(on) (Ohms) >d Continuous (Amps) Power Dissipation (Watts) 100 100 100 100 100 100 100 100 100 100 90 90


    OCR Scan     		IRF150 IRF152 IRF140 IRF142 VN1000A IRF130 VN1001A IRF132 IRF120 IRF122 VN64GA IRF733 2N6658 IRF120 IRF122 IRF130 IRF132 IRF140 IRF142 IRF150 PDF

    irf250

    Abstract: IRF133 international rectifier 2sk135 equivalent HPWR 6501 IRF350 2SK132 2SK133 HPWR-6502 HPWR-6503 HPWR-6504
    Text: MOSPOWER Cross Reference List MOSPOWER Cross Reference List HEWLETT-PACKARD Industry Part No. HPWR-6501 HPW R-6502 HPW R-6503 HPW R-6504 BV d s S Volts rDS(on) (Ohms) Package 450 400 450 400 0.85 0.74 1.0 1.0 TO -3 TO -3 TO -3 TO -3 100 120 140 160 180 200


    OCR Scan     		PWR-6501 IRF441 HPWR-6502 IRF340 HPWR-6503 HPWR-6504 VN4001A 2SK132 IRF122 irf250 IRF133 international rectifier 2sk135 equivalent HPWR 6501 IRF350 2SK133 PDF

    pn junction DIODE 1N4001

    Abstract: VN64GA IRF533 IVN6100TNU IVN6200CND IVN6200CNE IVN6200CNF IVN6200CNH IVN6200CNM VN0401D
    Text: 1-17 MOSPOWER Cross Reference List c « g s s <0J= i n i n m i n • - CM CM CM ^ • 'd d d o d 1o o o o o I m iD lO m | I I I | ' r r r 's ' < O Ò ' ' ' lO ' I O O I I I P ' ' ' ' I o o r i mm | ioom m I L -^ ^ l I c\i CM i I I j j CO 00 CO CO j I I I I OOOO


    OCR Scan     		IVN6100TNU IVN6200CND O-220 VN0401D IVN6200CNE T0-220 IRF533 IVN6200CNF VN0801D pn junction DIODE 1N4001 VN64GA IVN6200CNH IVN6200CNM PDF

    1RF820

    Abstract: 733 331 VN64GA CHARACTERISTICS DIODE 10SI 10 IRF332 VN4000A IRF340 IRF440 IRF450 IRF820
    Text: Ü Ü A C D ^ U /C D M i v i a iv i v ^ i v T T k iv r i i i i i v D r/\W i t i v u v i w C A lA A ^ /\ r i f^ .n \ M é g ^ i ^ v i v i w u iv i^ 1-2 MOSPOWER Prime Product Selector Guide *2 0 0 °C RATING Packages: I B V qss Volts 4 5 0 -5 0 0 TO-3 TO-220


    OCR Scan     		to-220 to-39 to-237 to-92 to-202 IRF450 IRF840 IRF440 VN5001D/IRF830 VNP002A* 1RF820 733 331 VN64GA CHARACTERISTICS DIODE 10SI 10 IRF332 VN4000A IRF340 IRF820 PDF

    VN1000A

    Abstract: VN64GA IRF533 IVN6100TNU IVN6200CND IVN6200CNE IVN6200CNF IVN6200CNH IVN6200CNM VN0401D
    Text: 1-17 MOSPOWER Cross Reference List c « g s s <0J= P fi c i n i n m i n • - CM CM CM ^ I m iD lO m • 'd d d o d ' r r r ' s 1o o o o o | I O O I I I P I I I | I o o r i mm | ioom m I ' < O Ò ' ' ' lO ' ' ' ' ' L -^ ^ l I c\i CM i I I j j CO 00 CO CO j


    OCR Scan     		IVN6100TNU IVN6200CND O-220 VN0401D IVN6200CNE T0-220 IRF533 IVN6200CNF VN0801D VN1000A VN64GA IVN6200CNH IVN6200CNM PDF

    irf120

    Abstract: VN64GA oni 350 2N6658 IRF122 IRF130 IRF132 IRF140 IRF142 IRF150
    Text: MOSPOWER Selector Guide MOSPOWER Selector Guide continued N-Channel MOSPOWER (Continued) Device FiC ^ T ' u TO-3 TO-22QAB Breakdown Voltage (Volts) 100 100 100 100 100 100 100 100 100 100 90 90 90 8CI 80 60 6Cl 60 60 60 60 60 60 60 60 60 60 60 40 40 35 35


    OCR Scan     		IRF150 IRF152 IRF140 IRF142 VN1000A IRF130 VN1001A IRF132 IRF120 IRF122 irf120 VN64GA oni 350 2N6658 IRF122 IRF130 IRF132 IRF140 IRF142 IRF150 PDF