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    IRF10 Price and Stock

    Infineon Technologies AG IRF1018ESTRLPBF

    MOSFET N-CH 60V 79A D2PAK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRF1018ESTRLPBF Cut Tape 8,550 1
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    IRF1018ESTRLPBF Digi-Reel 8,550 1
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    IRF1018ESTRLPBF Reel 8,000 800
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    Mouser Electronics IRF1018ESTRLPBF 4,481
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    Arrow Electronics IRF1018ESTRLPBF 1,600 12 Weeks 800
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    Infineon Technologies AG IRF1010EZPBF

    MOSFET N-CH 60V 75A TO220AB
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    DigiKey IRF1010EZPBF Tube 7,964 1
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    Mouser Electronics IRF1010EZPBF 3,370
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    Arrow Electronics IRF1010EZPBF 10,300 12 Weeks 1
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    Rochester Electronics IRF1010EZPBF 3,864 1
    • 1 $0.654
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    Infineon Technologies AG IRF100B202

    MOSFET N-CH 100V 97A TO220AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRF100B202 Tube 1,919 1
    • 1 $2.63
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    Mouser Electronics IRF100B202 2,150
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    Infineon Technologies AG IRF1010NSTRLPBF

    MOSFET N-CH 55V 85A D2PAK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRF1010NSTRLPBF Digi-Reel 1,660 1
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    IRF1010NSTRLPBF Cut Tape 1,660 1
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    Mouser Electronics IRF1010NSTRLPBF 8,420
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    Arrow Electronics IRF1010NSTRLPBF 6,400 8 Weeks 800
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    EBV Elektronik IRF1010NSTRLPBF 25,600 9 Weeks 800
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    Infineon Technologies AG IRF1010ESTRLPBF

    MOSFET N-CH 60V 84A D2PAK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRF1010ESTRLPBF Reel 1,600 800
    • 1 -
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    Mouser Electronics IRF1010ESTRLPBF 757
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    IRF10 Datasheets (108)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRF100 Nikkohm 50W to 500W HIGH POWER WIRE WOUND RESISTORS FLAT SHAPED ALUMINUM HOUSED Original PDF
    IRF100 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    IRF100B201 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 100V 192A TO-220AB Original PDF
    IRF100B202 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 100V 97A TO-220AB Original PDF
    IRF100P218XKMA1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - TRENCH_MOSFETS Original PDF
    IRF100P219XKMA1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - TRENCH_MOSFETS Original PDF
    IRF100S PICO Electronics Series IR Isolated Regulated up to 10 Watt DC-DC Converters Scan PDF
    IRF100S201 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 100V 192A D2PAK Original PDF
    IRF101 Fairchild Semiconductor N-Channel Power MOSFETs, 27 A, 60-100V Scan PDF
    IRF101 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    IRF1010 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    IRF1010 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    IRF1010 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    IRF1010E International Rectifier 60V Single N-Channel HEXFET Power MOSFET in a TO-220AB package; A IRF1010E with Standard Packaging Original PDF
    IRF1010E International Rectifier HEXFET Power MOSFET Original PDF
    IRF1010E International Rectifier HEXFET Power MOSFET Original PDF
    IRF1010E Toshiba Power MOSFETs Cross Reference Guide Original PDF
    IRF1010E International Rectifier Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Transistor, Field Effect, N-Channel, Power, 60V, 81A, Pkg Style TO-220AB Scan PDF
    IRF1010EL International Rectifier 60V Single N-Channel HEXFET Power MOSFET in a TO-262 package; A IRF1010EL with Standard Packaging Original PDF
    IRF1010EL International Rectifier HEXFET Power MOSFET Original PDF

    IRF10 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    AN-994

    Abstract: IRF1010EL IRF1010ES IRF530S IRF1010ELPBF
    Text: PD - 95444 Advanced Process Technology l Surface Mount IRF1010ES l Low-profile through-hole (IRF1010EL) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description IRF1010ESPbF IRF1010ELPbF l HEXFET Power MOSFET D VDSS = 60V


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    PDF IRF1010ES) IRF1010EL) IRF1010ESPbF IRF1010ELPbF EIA-418. AN-994 IRF1010EL IRF1010ES IRF530S IRF1010ELPBF

    Mosfet 100V 50A

    Abstract: irf10n40
    Text: IRF10N40 ! POWER MOSFET GENERAL DESCRIPTION FEATURES This high voltage MOSFET uses an advanced termination ‹ Robust High Voltage Termination scheme to provide enhanced voltage-blocking capability ‹ Avalanche Energy Specified without degrading performance over time. In addition, this


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    PDF IRF10N40 Mosfet 100V 50A irf10n40

    AN-994

    Abstract: IRF1010N IRF1010NS IRF530S
    Text: Previous Datasheet Index Next Data Sheet PD 9.1372 IRF1010NS PRELIMINARY HEXFET Power MOSFET l l l l l l Advanced Process Technology Surface Mount Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 55V RDS on = 0.012Ω


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    PDF IRF1010NS AN-994 IRF1010N IRF1010NS IRF530S

    IRF1010N

    Abstract: IRF1010
    Text: Previous Datasheet Index Next Data Sheet PD 9.1278B IRF1010N PRELIMINARY HEXFET Power MOSFET Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated VDSS = 55V RDS on = 0.012 Ω ID = 72A Description


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    PDF 1278B IRF1010N O-220 IRF1010N IRF1010

    marking code 43a

    Abstract: 43A MARKING CODE IRF1010NS AN-994 IRF1010N IRF1010NL
    Text: PD - 91372B IRF1010NS/L HEXFET Power MOSFET l l l l l l Advanced Process Technology Surface Mount IRF1010NS Low-profile through-hole (IRF1010NL) 175°C Operating Temperature Fast Switching Fully Avalanche Rated D RDS(on) = 0.011W G ID = 84A† Description


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    PDF 91372B IRF1010NS/L IRF1010NS) IRF1010NL) packag10) marking code 43a 43A MARKING CODE IRF1010NS AN-994 IRF1010N IRF1010NL

    Untitled

    Abstract: No abstract text available
    Text: PD - 91670 IRF1010E HEXFET Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 60V RDS on = 12mΩ G ID = 84A‡ S Description Advanced HEXFET® Power MOSFETs from International


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    PDF IRF1010E O-220

    Untitled

    Abstract: No abstract text available
    Text: PD - 95361A IRF1010ZPbF IRF1010ZSPbF IRF1010ZLPbF Features l l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free HEXFET Power MOSFET D VDSS = 55V RDS on = 7.5mΩ


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    PDF 5361A IRF1010ZPbF IRF1010ZSPbF IRF1010ZLPbF AN-994.

    IRF1010Z

    Abstract: IRF1010ZL IRF1010ZS
    Text: PD - 95361 IRF1010ZPbF IRF1010ZSPbF IRF1010ZLPbF AUTOMOTIVE MOSFET Features l l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free HEXFET Power MOSFET


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    PDF IRF1010ZPbF IRF1010ZSPbF IRF1010ZLPbF IRF1010Z IRF1010ZL IRF1010ZS

    Untitled

    Abstract: No abstract text available
    Text: IRF1010NS/LPbF D2Pak Package Outline Dimensions are shown in millimeters inches D2Pak Part Marking Information (Lead-Free) T H IS IS AN IR F 5 3 0 S W IT H L OT CODE 80 2 4 AS S E M B L E D ON W W 0 2, 20 00 IN T H E AS S E M B L Y L IN E "L " IN T E R N AT IO N AL


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    PDF IRF1010NS/LPbF EIA-418.

    Untitled

    Abstract: No abstract text available
    Text: IRF1010NPbF TO-220AB Package Outline Dimensions are shown in millimeters inches 10.54 (.415) 10.29 (.405) 2.87 (.113) 2.62 (.103) -B- 3.78 (.149) 3.54 (.139) 4.69 (.185) 4.20 (.165) -A- 1.32 (.052) 1.22 (.048) 6.47 (.255) 6.10 (.240) 4 15.24 (.600) 14.84 (.584)


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    PDF IRF1010NPbF O-220AB O-220AB.

    AN-994

    Abstract: IRF1010N IRF1010NL IRF1010NS to262 pcb footprint
    Text: PD - 91372B IRF1010NS/L HEXFET Power MOSFET l l l l l l Advanced Process Technology Surface Mount IRF1010NS Low-profile through-hole (IRF1010NL) 175°C Operating Temperature Fast Switching Fully Avalanche Rated D RDS(on) = 0.011W G ID = 84A† Description


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    PDF 91372B IRF1010NS/L IRF1010NS) IRF1010NL) AN-994 IRF1010N IRF1010NL IRF1010NS to262 pcb footprint

    Untitled

    Abstract: No abstract text available
    Text: PD - 94965 IRF1010EPbF l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = 60V RDS on = 12mΩ G ID = 84A‡ S Description


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    PDF IRF1010EPbF O-220 fo20AB

    marking F53

    Abstract: AN-994 IRF1010N IRF1010NL IRF1010NS SS2000
    Text: PD - 9.1372A IRF1010NS/L HEXFET Power MOSFET l l l l l l Advanced Process Technology Surface Mount IRF1010NS Low-profile through-hole (IRF1010NL) 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 55V RDS(on) = 0.011Ω G ID = 84A†


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    PDF IRF1010NS/L IRF1010NS) IRF1010NL) marking F53 AN-994 IRF1010N IRF1010NL IRF1010NS SS2000

    irf1010e

    Abstract: irf1010e equivalent *f1010e
    Text: PD - 9.1670B IRF1010E HEXFET Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 60V RDS on = 0.012Ω G ID = 81A… S Description Fifth Generation HEXFETs from International Rectifier


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    PDF 1670B IRF1010E O-220 irf1010e irf1010e equivalent *f1010e

    irf1010e equivalent

    Abstract: irfp250n equivalent IRF744 equivalent IRFP260n equivalent IRF9540N equivalent IRF730A equivalent IRFBE30 equivalent irfp260n IRF4905 equivalent IRFU9120 equivalent
    Text: International Rectifier MOSFETs MOSFETs Continued HEXFETª Power MOSFETs Ñ TO-220AB (continued) N-Channel (continued) Mfr.Õs Type IRFZ24N* IRF1010E* IRFZ44E* IRFZ34E* IRFZ14* IRF2807* IRF3710* IRF1310N* IRF540N* IRF530N* IRF520N* IRF510* IRF3415* IRF640N


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    PDF O-220AB O-220 IRFZ24N* IRFIZ24N IRFD024 IRF1010E* IRFI1310N IRFD014 IRFZ44E* IRFI540N irf1010e equivalent irfp250n equivalent IRF744 equivalent IRFP260n equivalent IRF9540N equivalent IRF730A equivalent IRFBE30 equivalent irfp260n IRF4905 equivalent IRFU9120 equivalent

    DM marking code

    Abstract: irf 560 IRF1010Z IRF1010ZL IRF1010ZS
    Text: PD - 94652A IRF1010Z IRF1010ZS IRF1010ZL AUTOMOTIVE MOSFET Features ● ● ● ● ● HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax D VDSS = 55V


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    PDF 4652A IRF1010Z IRF1010ZS IRF1010ZL AN-994. O-220AB DM marking code irf 560 IRF1010Z IRF1010ZL IRF1010ZS

    AN-994

    Abstract: IRF1010EL IRF1010ES *f1010e
    Text: PD - 91720 IRF1010ES IRF1010EL l l l l l l Advanced Process Technology Surface Mount IRF1010ES Low-profile through-hole (IRF1010EL) 175°C Operating Temperature Fast Switching Fully Avalanche Rated HEXFET Power MOSFET D VDSS = 60V RDS(on) = 12mΩ G Description


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    PDF IRF1010ES IRF1010EL IRF1010ES) IRF1010EL) AN-994 IRF1010EL IRF1010ES *f1010e

    IRF1010Z

    Abstract: IRF1010ZL IRF1010ZS
    Text: PD - 95361 IRF1010ZPbF IRF1010ZSPbF IRF1010ZLPbF AUTOMOTIVE MOSFET Features l l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free HEXFET Power MOSFET


    Original
    PDF IRF1010ZPbF IRF1010ZSPbF IRF1010ZLPbF AN-994. O-220AB IRF1010Z IRF1010ZL IRF1010ZS

    IRF1010E

    Abstract: No abstract text available
    Text: PD - 91670 IRF1010E HEXFET Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 60V RDS on = 12mΩ G ID = 84A‡ S Description Advanced HEXFET® Power MOSFETs from International


    Original
    PDF IRF1010E O-220 O-220AB IRF1010E

    AN-994

    Abstract: IRF1010EL IRF1010ES
    Text: PD - 91720 IRF1010ES IRF1010EL l l l l l l Advanced Process Technology Surface Mount IRF1010ES Low-profile through-hole (IRF1010EL) 175°C Operating Temperature Fast Switching Fully Avalanche Rated HEXFET Power MOSFET D VDSS = 60V RDS(on) = 12mΩ G Description


    Original
    PDF IRF1010ES IRF1010EL IRF1010ES) IRF1010EL) AN-994 IRF1010EL IRF1010ES

    Untitled

    Abstract: No abstract text available
    Text: PD - 9.1372A International IQ R Rectifier IRF1010NS/L HEXFET Power MOSFET • Advanced Process Technology • Surface Mount IRF101ONS • Low-profile through-hole(IRF101ONL) • 175°C Operating Temperature • Fast Switching • Fully Avalanche Rated


    OCR Scan
    PDF IRF101ONS) IRF101ONL)

    IRF1010E

    Abstract: No abstract text available
    Text: P D -9 .1 6 7 0 B International I R Rectifier IRF1010E HEXFET Power MOSFET Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Vdss = 60 V R ü S o n = 0.0120 . ID = 81 A © Description Fifth G e n e ratio n H E X F E T s from International Rectifier


    OCR Scan
    PDF IRF1010E IRF1010E

    IRF1010E

    Abstract: *f1010e
    Text: P D - 9 .1670A International IGR Rectifier IRF1010E H E X FE T Pow er M O S F E T • • • • • Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Vqss - 6 0 V f^DS on = 0 . 0 1 2 0 lD = 81 A®


    OCR Scan
    PDF IRF1010E O-220 IRF1010E *f1010e

    IRF1010

    Abstract: to-22qab XGR719C 1789
    Text: TO-22QAB EXAMPLE: THIS IS AN IRF1010 LOT CODE 1789 ASSEMBLED ON WW 19, 1997 IN THE ASSEMBLY LINE "C" INTERNATIONAL RECTIFIER LOGO O IRF1010 K a i 71 ge 17 ASSEMBLY LOT CODE PART NUMBER 89 DATE CODE YEAR 7 = 1997 WEEK 19 LINE C


    OCR Scan
    PDF O-22QAB IRF1010 XGR719C to-22qab 1789