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    IRF 210 MOSFET Search Results

    IRF 210 MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    IRF 210 MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    irf 210a

    Abstract: IRF 120A IRF 840 MOSFET irf 210 mosfet IRF 504 irf 840 if IRF 150a IRFB3206 smps 48v 12v irf 48v mosfet
    Text: PD - 97097B IRFB3206PbF IRFS3206PbF IRFSL3206PbF HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits G D Benefits l Improved Gate, Avalanche and Dynamic dV/dt


    Original     		PDF 97097B IRFB3206PbF IRFS3206PbF IRFSL3206PbF O-220AB O-262 EIA-418. irf 210a IRF 120A IRF 840 MOSFET irf 210 mosfet IRF 504 irf 840 if IRF 150a IRFB3206 smps 48v 12v irf 48v mosfet

    Untitled

    Abstract: No abstract text available
    Text: PD - 97097B IRFB3206PbF IRFS3206PbF IRFSL3206PbF HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits G D Benefits l Improved Gate, Avalanche and Dynamic dV/dt


    Original     		PDF 97097B IRFB3206PbF IRFS3206PbF IRFSL3206PbF O-220AB O-262 EIA-418.

    IRF 840 MOSFET

    Abstract: IRFB3206PbF AN-994 IRFB3206 IRF Power MOSFET code marking irf 210a
    Text: PD - 97097 IRFB3206PbF IRFS3206PbF IRFSL3206PbF HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits D VDSS RDS on typ.


    Original     		PDF IRFB3206PbF IRFS3206PbF IRFSL3206PbF O-220AB O-262 EIA-418. IRF 840 MOSFET IRFB3206PbF AN-994 IRFB3206 IRF Power MOSFET code marking irf 210a

    IRF 840 MOSFET

    Abstract: irf 210 mosfet irf 840 if irf 1040 IRFB3206
    Text: PD - 97097A IRFB3206PbF IRFS3206PbF IRFSL3206PbF HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits G D Benefits l Improved Gate, Avalanche and Dynamic dV/dt


    Original     		PDF 7097A IRFB3206PbF IRFS3206PbF IRFSL3206PbF O-220AB IRFB3206PbF IRFS3206PbF O-262 10lbxin IRF 840 MOSFET irf 210 mosfet irf 840 if irf 1040 IRFB3206

    IRF 840 MOSFET

    Abstract: IRF 120A irf 210 mosfet irf 840 if irf 210a IRF 150a AN-994 97097B
    Text: PD - 97097B IRFB3206PbF IRFS3206PbF IRFSL3206PbF HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits G D Benefits l Improved Gate, Avalanche and Dynamic dV/dt


    Original     		PDF 97097B IRFB3206PbF IRFS3206PbF IRFSL3206PbF O-220AB O-262 EIA-418. IRF 840 MOSFET IRF 120A irf 210 mosfet irf 840 if irf 210a IRF 150a AN-994 97097B

    irf 210 mosfet

    Abstract: IRFB3206 AN-994 IRF 150a IRF 840 MOSFET irf 1040
    Text: PD - 97097A IRFB3206PbF IRFS3206PbF IRFSL3206PbF HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits G D Benefits l Improved Gate, Avalanche and Dynamic dV/dt


    Original     		PDF 7097A IRFB3206PbF IRFS3206PbF IRFSL3206PbF O-220AB O-262 EIA-418. irf 210 mosfet IRFB3206 AN-994 IRF 150a IRF 840 MOSFET irf 1040

    AN-994

    Abstract: IRF 318 J
    Text: PD - 95553B IRLR3105PbF IRLU3105PbF HEXFET Power MOSFET Features l l l l l l l Logic-Level Gate Drive Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free D VDSS = 55V


    Original     		PDF 95553B IRLR3105PbF IRLU3105PbF AN-994 IRF 318 J

    Untitled

    Abstract: No abstract text available
    Text: PD - 95553B IRLR3105PbF IRLU3105PbF HEXFET Power MOSFET Features l l l l l l l Logic-Level Gate Drive Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free D VDSS = 55V


    Original     		PDF 95553B IRLR3105PbF IRLU3105PbF

    Untitled

    Abstract: No abstract text available
    Text: PD - 95555 SMPS MOSFET Applications l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Computer Processor Power l Lead-Free Benefits Ultra-Low Gate Impedance l Very Low RDS on at 4.5V VGS


    Original     		PDF IRLR3715PbF IRLU3715PbF IRLR3715 IRLU3715 Gate-to-Sou51mH AN-994

    MOSFET IRF 570

    Abstract: 40V 14A DPAK 950.83
    Text: PD- 95083 IRLR/U2703PbF l l l l l l l l Logic-Level Gate Drive Ultra Low On-Resistance Surface Mount IRLR2703 Straight Lead (IRLU2703) Advanced Process Technology Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = 30V RDS(on) = 0.045Ω


    Original     		PDF IRLR/U2703PbF IRLR2703) IRLU2703) O-252AA) EIA-481 EIA-541. EIA-481. MOSFET IRF 570 40V 14A DPAK 950.83

    Untitled

    Abstract: No abstract text available
    Text: PD- 95084 IRLR/U2905PbF l l l l l l l l Logic-Level Gate Drive Ultra Low On-Resistance Surface Mount IRLR2905 Straight Lead (IRLU2905) Advanced Process Technology Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = 55V RDS(on) = 0.027Ω


    Original     		PDF IRLR/U2905PbF IRLR2905) IRLU2905) O-252AA) EIA-481 EIA-541. EIA-481.

    U120

    Abstract: IRLR2908PbF
    Text: PD - 95552B IRLR2908PbF IRLU2908PbF HEXFET Power MOSFET Features l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free D VDSS = 80V


    Original     		PDF 95552B IRLR2908PbF IRLU2908PbF AN-994. U120 IRLR2908PbF

    IRLR2908PbF

    Abstract: No abstract text available
    Text: PD - 95552B IRLR2908PbF IRLU2908PbF HEXFET Power MOSFET Features l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free D VDSS = 80V


    Original     		PDF 95552B IRLR2908PbF IRLU2908PbF AN-994. IRLR2908PbF

    MOSFET IRF 635

    Abstract: No abstract text available
    Text: PD - 95085 IRLR/U3103PbF Logic-Level Gate Drive l Ultra Low On-Resistance l Surface Mount IRLR3103 l Straight Lead (IRLU3103) l Advanced Process Technology l Fast Switching l Fully Avalanche Rated l Lead-Free Description HEXFET Power MOSFET l D VDSS = 30V


    Original     		PDF IRLR/U3103PbF IRLR3103) IRLU3103) O-252AA) EIA-481 EIA-541. EIA-481. MOSFET IRF 635

    irfr 210

    Abstract: No abstract text available
    Text: PD - 95953 IRFR2307ZPbF IRFU2307ZPbF AUTOMOTIVE MOSFET Features l l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free Description HEXFET Power MOSFET


    Original     		PDF IRFR2307ZPbF IRFU2307ZPbF AN-994 irfr 210

    MOSFET IRF 570

    Abstract: marking 31A 035H IRFP31N50L IRFPE30 PE30 irf 2030
    Text: PD - 94081A IRFP31N50L SMPS MOSFET HEXFET Power MOSFET Applications • Zero Voltage Switching SMPS • Telecom and Server Power Supplies • Uninterruptible Power Supplies • Motor Control applications VDSS RDS on typ. Trr typ. 0.15Ω 500V Features and Benefits


    Original     		PDF 4081A IRFP31N50L 170ns O-247AC O-247AC MOSFET IRF 570 marking 31A 035H IRFP31N50L IRFPE30 PE30 irf 2030

    IRFIZ46N

    Abstract: IRFZ46N MOSFET IRF 630 IRFZ46N equivalent
    Text: PD - 9.1306A IRFIZ46N HEXFET Power MOSFET l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS … Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated D VDSS = 55V RDS on = 0.020Ω G Description Fifth Generation HEXFETs from International Rectifier


    Original     		PDF IRFIZ46N O-220 IRFIZ46N IRFZ46N MOSFET IRF 630 IRFZ46N equivalent

    AN1001

    Abstract: IRF 860
    Text: PD -95441 SMPS MOSFET VDSS Applications Reset Switch for Active Clamp Reset DC-DC converters l Lead-Free IRF6218PbF HEXFET Power MOSFET RDS on max -150V 150m:@VGS = -10V l Benefits l l l ID -27A D Low Gate to Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including


    Original     		PDF IRF6218PbF -150V AN1001) O-220AB O-220AB -520A/ AN1001 IRF 860

    5M MARKING CODE DIODE 5A 100V

    Abstract: No abstract text available
    Text: PD - 95087 IRLR/U3410PbF l l l l l l l l Logic Level Gate Drive Ultra Low On-Resistance Surface Mount IRLR3410 Straight Lead (IRLU3410) Advanced Process Technology Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = 100V RDS(on) = 0.105Ω


    Original     		PDF IRLR/U3410PbF IRLR3410) IRLU3410) O-252AA) EIA-481 EIA-541. EIA-481. 5M MARKING CODE DIODE 5A 100V

    Equivalent IRF 44

    Abstract: ultra low igss pA IRL2505 IRLI2505
    Text: PD - 9.1327A IRLI2505 HEXFET Power MOSFET Logic-Level Gate Drive Advanced Process Technology l Ultra Low On-Resistance l Isolated Package l High Voltage Isolation = 2.5KVRMS … l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated Description l D


    Original     		PDF IRLI2505 O-220 Equivalent IRF 44 ultra low igss pA IRL2505 IRLI2505

    IRFIZ46N

    Abstract: IRFZ46N IRFZ46N equivalent irf 480 IRF 1040
    Text: PD - 9.1306A IRFIZ46N HEXFET Power MOSFET l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS … Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated D VDSS = 55V RDS on = 0.020Ω G Description Fifth Generation HEXFETs from International Rectifier


    Original     		PDF IRFIZ46N O-220 IRFIZ46N IRFZ46N IRFZ46N equivalent irf 480 IRF 1040

    irf440

    Abstract: No abstract text available
    Text: IOR IRF Series Devices IRF Series Data Sheet T h e IR F D a ta S h e e t d e s c rib e s 32 d e v ic e s , 28 N -C h a n n e l a n d 4 P -C h a n n e l, a ll c o n ta in e d in th e T O -2 Û 4 A A o r T 0 - 2 0 4 A E p a c k a g e . T h is d a ta s h e e t


    OCR Scan     		PDF IRF9140 IRF9230 IRF9240 irf440

    IRF series

    Abstract: for driver circuit for mosfet IRF240 IRF350 MOSFET driver IRF 543 MOSFET irf460 IRF 870 aK 9AA diode IRF450A irf150 compliment alps 83 7n
    Text: IOR IRF Series Devices IRF Series Data Sheet a lp h a -n u m e ric order. W h e re the inform ation is d e v ic e spe c ific, w e h av e a s s ig n ed a num eric c h a ra cte r for the graph and an alph a c h a ra cte r to a given d evice. S e e T a b le A below . W h e re graphs


    OCR Scan     		PDF

    IRFD

    Abstract: IRFD210 D210 IRFD211 IRFD212 IRFD213
    Text: Standard Power MOSFETs- IRFD210, IRFD211, IRFD212, IRFD213 File Number 2316 Power M O S Field-Effect Transistore N-CHANNEL ENHANCEMENT MODE N-Channel Enhancement-Mode Power Field-Effect Transistore 0.45 A and 0.6 A, 150 V - 200 V


    OCR Scan     		PDF IRFD210, IRFD211, IRFD212, IRFD213 92CS-33741 IRFD213 IRFD IRFD210 D210 IRFD211 IRFD212