MIL-R-26
Abstract: MIL-R-22684 IRC gs-3 C 828 gs-3 GS-3 resistor IRC GS-3 TO
Text: Thick Film Semi-Precision Metal Glaze Power Resistors IRC Wire and Film Technologies Division GS-3 Series • Power rating of 3W @25°C; 2W @ 70°C • Resistance range from 1Ω to 3MΩ • Standard tolerances of ±1%, ±2%, ±5% • Superior surge performance
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MIL-R-26
MIL-R-10509-D
MIL-R-22684
MIL-R-26
MIL-R-22684
IRC gs-3
C 828
gs-3
GS-3 resistor
IRC GS-3 TO
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fixed film resistor
Abstract: GF-55 irc 2w resistor
Text: Thick Film Metal Glaze Resistor ������������������ ��������������������� ���������������� GF Series ����������������
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GF-55
GF-07
GF-60
GF-20
fixed film resistor
GF-55
irc 2w resistor
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IRC GS-3 TO
Abstract: GS-3 resistor IRC gs-3 irc gs-3 resistor 1R00 51R0 MIL-R-22684 MIL-R-26 R250 irc lf
Text: Thick Film Semi-Precision Metal Glaze Power Resistors GS-3 Series • • • • • Superior surge performance Resistance range from 1Ω - 3MΩ Standard tolerances of ±1%, ±2%, ±5% Power rating of 3W @25°C; 2W @70°C Effective as carbon composite replacement
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MIL-R-26
IRC GS-3 TO
GS-3 resistor
IRC gs-3
irc gs-3 resistor
1R00
51R0
MIL-R-22684
MIL-R-26
R250
irc lf
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IRC GF
Abstract: GF-55 marking code gf GF20
Text: THICK FILM METAL GLAZE RESISTOR ISO-9001 Registered GF SERIES Spiralled or laser helixed to resistance value, tolerance High temperature soldered termination-lead assembly Tough molded jacket • • • • Metal Glaze thick film element fired at 1000°C to
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ISO-9001
GF-20
IRC GF
GF-55
marking code gf
GF20
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87013
Abstract: No abstract text available
Text: TaNFilm SMALL OUTLINE SURFACE MOUNT RESISTOR NETWORK ISO-9001 Registered Rugged, molded construction GULL WING SERIES Ultra precision sputtered tantalum nitride resistance element on high purity alumina • • • • • • DESC 87012 and 87013 available
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ISO-9001
provides002
87013
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IRC 0805
Abstract: N2 SOT23-6 AVX 0805 dp502 b 1969 INDUCTOR CHIP FERRITE BEAD 0805 C3330 avx-1210 CIRKIT diagram Converter 24V to 12V Sanyo capacitors
Text: ZXRD1000 SERIES PWM DC-DC CONTROLLERS HIGH EFFICIENCY SIMPLESYNC DESCRIPTION ZXRD1000 series can be used with an all N channel topology or a combination N & P channel topology. Additional functionality includes shutdown control, a user adjustable low battery flag and simple
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ZXRD1000
D-81673
IRC 0805
N2 SOT23-6
AVX 0805
dp502
b 1969
INDUCTOR CHIP FERRITE BEAD 0805
C3330
avx-1210
CIRKIT diagram Converter 24V to 12V
Sanyo capacitors
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rohm CRB25 series
Abstract: CRB25 samsung ltcc KOA RK73 samsung SMD resistors SMD resistors 0805 koa SMD resistors 1206 samsung crcw resistors dale KOA RK73B sei smd 1206 resistors
Text: PMS 378 neg. PMS 540 neg. RESISTORS KOA SPEER ELECTRONICS, INC. 5% STANDARD E-24 E-12 Decade Values 10 33 12 39 15 47 18 56 22 68 27 82 10 22 47 11 24 51 12 27 56 13 30 62 15 33 68 16 36 75 . . . your partner in advancing technology • 18 39 82 20 43 91
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CMF65
rohm CRB25 series
CRB25
samsung ltcc
KOA RK73
samsung SMD resistors
SMD resistors 0805 koa
SMD resistors 1206 samsung
crcw resistors dale
KOA RK73B
sei smd 1206 resistors
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Untitled
Abstract: No abstract text available
Text: ilm Semi-Precision Glaze Thick Film Semi-Precision Metal Glaze™ Power Resistors Resistors Thick Film Semi-Precision •Metal Superior surge performance · ResistanceGlaze™ range from 1Ω - 3MΩ erformance Standard tolerances of ±1%, ±2%, ±5% Resistors
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sanyo OS-CON
Abstract: B806 IT 236 schaffner dc swinging choke 20SV68M 6SA150M n1 sot23 N2 SOT23-6 IRC 0805 sanyo CG
Text: ZXRD1000 SERIES HIGH EFFICIENCY SIMPLESYNC PWM DC-DC CONTROLLERS DESCRIPTION ZXRD1000 series can be used with an all N channel topology or a combination N & P channel topology. Additional functionality includes shutdown control, a user adjustable low battery flag and simple
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ZXRD1000
dr100
sanyo OS-CON
B806
IT 236 schaffner
dc swinging choke
20SV68M
6SA150M
n1 sot23
N2 SOT23-6
IRC 0805
sanyo CG
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simple circuit diagram of electronic choke low cost
Abstract: dp502 20SV68M IT 236 schaffner n1 sot23 Sanyo capacitors simple circuit diagram of electronic choke 680R BAT54 QSOP16
Text: ZXRD1000 SERIES PWM DC-DC CONTROLLERS HIGH EFFICIENCY SIMPLESYNC DESCRIPTION ZXRD1000 series can be used with an all N channel topology or a combination N & P channel topology. Additional functionality includes shutdown control, a user adjustable low battery flag and simple
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ZXRD1000
synchrono611
D-81673
simple circuit diagram of electronic choke low cost
dp502
20SV68M
IT 236 schaffner
n1 sot23
Sanyo capacitors
simple circuit diagram of electronic choke
680R
BAT54
QSOP16
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IRC GS-3 TO
Abstract: No abstract text available
Text: ILM 3EMI 0RECISION 'LAZE Thick Film Semi-Precision Metal Glaze Power Resistors 2ESISTORS 4HICK &ILM 3EMI 0RECISION •-ETAL 'LAZE Superior surge performance · FORMANCE Resistance range from 1Ω - 3MΩ ·0OWER 2ESISTORS Standard tolerances of ±1%, ±2%, ±5%
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HRISTITEXAS53!
IRC GS-3 TO
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Untitled
Abstract: No abstract text available
Text: THICK FILM METAL GLAZE RESISTOR GF • • • • ISO-9001 ^R egistered/ SERIES Flame resistant construction Rugged molded jacket High temperature soldered termination Metal Glaze™ thick film element_ Tin-lead electroplated copper leads SPECIFICATIONS:
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ISO-9001
GF-55
GF-07
GF-60
GF-20
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GF20D
Abstract: No abstract text available
Text: s Off?C »•Bin« THICK FILM METAL GLAZE RESISTOR Spiralled or laser helixed to resistance value, tolerance High temperature soldered termination-lead assembly GF SERIES Tough molded jacket Flame resistant construction -Tin-lead electroplated copper leads
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GF-55
GF-07
GF-60
GF-20
572M2
GF20D
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fet third quadrant operation
Abstract: jfet transistor for VCR fet vcr compatible siliconix FET AUDIO AMPLIFIER n-channel jfet amplitude control 647 "photomultiplier" N-Channel JFET FETs sherwin transistor jfet P channel Junction FET
Text: s Siliconix APPLICATION NOTE FETs As Voltage-Controlled Resistors IN T R O D U C T IO N The Nature of VCRs A v o lta g e -c o n tro lle d re sisto r V C R m ay be d e fin e d as a th re e -te rm in a l v ariable re sisto r w h e re th e re sista n c e value
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AU-13,
fet third quadrant operation
jfet transistor for VCR
fet vcr compatible
siliconix FET AUDIO AMPLIFIER
n-channel jfet amplitude control
647 "photomultiplier"
N-Channel JFET FETs
sherwin
transistor jfet
P channel Junction FET
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Untitled
Abstract: No abstract text available
Text: Advanced IRFS730A Power MOSFET FEATURES B V DSS Rugged Gate Oxide Technology • Lower Input Capacitance ^ D S o n = ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current :10|JA(Max.) @ V DS = 400V ■ Lower RDS(ON) : 0.765 £1 (Typ.)
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IRFS730A
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R0009 14 lead
Abstract: r0009 14 pin
Text: SURFACE MOUNT _QIRC THE RESISTOR PEOPLE TANFILM SUBMINIATURE SURFACE MOUNT PRECISION DIVIDER SMT-TEE Encapsulation, optional color code indicator SERIES • Subminiature 0.075" x 0.075" • Dual resistor, center pad common • High precision - Absolute tolerance
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Untitled
Abstract: No abstract text available
Text: IRFP254A A d van ced Power MOSFET FEATURES B V = 250 V ^D S o n = 0 .1 4 Q dss ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = 25 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area TO-3P ♦ Lower Leakage Current: 10(j,A (Max.) @ V DS = 250V
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IRFP254A
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Untitled
Abstract: No abstract text available
Text: IRFP254 A d van ced Power MOSFET FEATURES B V = 250 V ^D S o n = 0 .1 4 Q dss ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = 25 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area TO-3P ♦ Lower Leakage Current: 10(j,A (Max.) @ V DS = 250V
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IRFP254
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MSM6949
Abstract: No abstract text available
Text: OKI semiconductor MSM6949 ANALOG FRONT END LSI GENERAL DESCRIPTION The MSM6949 is an analog fr o n t end LSI w hich is fabricated by O K I's low power consum ption CMOS silicon gate technology. The MSM6949 is used to im plem ent an analog fro n t end fu n c tio n required in the modem set based on C C ITT V . 26, V . 27 and V . 29 re
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MSM6949
MSM6949
IV-A-91
IV-A-92
IV-A-93
MSM6949SS
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Power MOSFET 50V 10A
Abstract: 108D IRFP254A
Text: IRFP254A Advanced Power MOSFET FEATURES B V = 250 V ^D S o n = 0 .1 4 Q dss ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = 25 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area T O -3 P ♦ Lower Leakage Current: 10|xA (Max.) @ V DS = 250V
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IRFP254A
Power MOSFET 50V 10A
108D
IRFP254A
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108D
Abstract: IRFP254
Text: IRFP254 A dvanced Power MOSFET FEATURES B V = 250 V ^D S o n = 0 .1 4 Q dss ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = 25 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area T O -3 P ♦ Lower Leakage Current: 10|xA (Max.) @ V DS = 250V
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IRFP254
108D
IRFP254
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MOSFET IRF460
Abstract: IRF460 IRF462 MOSFET IRF460 flat package irf460 switching MOSFET 1rf460 1RF460 la1620 IRF46 AJZH
Text: Preview Products File Number IRF460, IRF462 2277 Avalanche-Energy-Rated N-Channel Power MOSFETs 21 A and 19 A, 500 V rDS on = 0.27 O and 0.35 O N-CHANNEL ENHANCEMENT MODE □ Features: • Single pulse avalanche energy rated m SOA is pow er-dissipation lim ite d
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IRF460,
IRF462
92CS-4
IRF460
IRF462
MOSFET IRF460
MOSFET IRF460 flat package
irf460 switching
MOSFET 1rf460
1RF460
la1620
IRF46
AJZH
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1d105
Abstract: unitrode Applications Note 1D100 100S ID100 ID103 ID104 ID105 ID106 unitrode op 02
Text: ID100-ID106 SCRs .5 Amp, Planar FEA TU RES • Voltage R a tin g s: to 400V • M axim um Gate T rigg er C u rre n t: 200/iA • H e rm e tically S e aled TO-18 M etal Can • P lan ar P assiv ate d C o n stru ction D ESCR IPTIO N T h is Data S h e e t d e sc rib e s U n itro d e's lin e of h e rm e tic a lly se ale d in d u stria l S C R s
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ID100-ID106
200/iA
ID100
ID103
ID104
ID105
ID106
1d105
unitrode Applications Note
1D100
100S
ID106
unitrode op 02
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1RF620
Abstract: No abstract text available
Text: • 4302571 0054013 HARRIS lib ■ HAS IR F 620/6 21/6 2 2/6 2 3 IRF62 OR/621R /622R /623R N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 Features Package T O -2 2 0 A B • 4.0A and 5.0A, 150V - 200V T O P VIE W • fDS on = O.Bii and 1.20 • Single Pulse Avalanche Energy Rated*
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IRF62
OR/621R
/622R
/623R
IRF620,
IRF621,
IRF622,
IRF623
IRF620R,
IRF621R,
1RF620
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