IPB80N06S4L-07 Search Results
IPB80N06S4L-07 Price and Stock
Infineon Technologies AG IPB80N06S4L07ATMA2MOSFET N-CH 60V 80A TO263-3 |
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IPB80N06S4L07ATMA2 | Digi-Reel | 423 | 1 |
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IPB80N06S4L07ATMA2 | Reel | 12 Weeks | 1,000 |
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IPB80N06S4L07ATMA2 | 1,800 |
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IPB80N06S4L07ATMA2 | 3,000 | 25 |
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IPB80N06S4L07ATMA2 | Cut Tape | 1,591 | 1 |
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IPB80N06S4L07ATMA2 | Cut Tape | 3,000 |
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IPB80N06S4L07ATMA2 | 13 Weeks | 1,000 |
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Infineon Technologies AG IPB80N06S4L07ATMA1MOSFET N-CH 60V 80A TO263-3 |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IPB80N06S4L07ATMA1 | Reel |
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Infineon Technologies AG IPB80N06S4L-07 |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IPB80N06S4L-07 | 274 |
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IPB80N06S4L-07 | 219 |
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IPB80N06S4L-07 | 36,958 |
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IPB80N06S4L-07 Datasheets (3)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | |
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IPB80N06S4L-07 |
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Single: N-Channel 60V MOSFETs; Package: PG-TO263-3; Technology: OptiMOS -T2; VDS (max): 60.0 V; RDS (on) (max) (@10V): 6.4 mOhm; ID (max): 80.0 A; RthJC (max): 1.9 K/W; | Original | |||
IPB80N06S4L07ATMA1 |
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 60V 80A TO263-3 | Original | |||
IPB80N06S4L07ATMA2 |
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 60V 80A TO263-3 | Original |