IPB80N06S2-08 Search Results
IPB80N06S2-08 Price and Stock
Infineon Technologies AG IPB80N06S208ATMA2MOSFET N-CH 55V 80A TO263-3 |
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IPB80N06S208ATMA2 | Reel |
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IPB80N06S208ATMA2 | 2,000 | 205 |
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IPB80N06S208ATMA2 | 2,000 | 1 |
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Infineon Technologies AG IPB80N06S208ATMA1MOSFET N-CH 55V 80A TO263-3 |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IPB80N06S208ATMA1 | Reel |
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IPB80N06S208ATMA1 | 128 | 1 |
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Infineon Technologies AG IPB80N06S2-08POWER FIELD-EFFECT TRANSISTOR, 80A I(D), 55V, 0.0077OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-263AB |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IPB80N06S2-08 | 97 |
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IPB80N06S2-08 | 5,370 |
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IPB80N06S2-08 Datasheets (3)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | |
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IPB80N06S2-08 |
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Single: N-Channel 55V MOSFETs; Package: PG-TO263-3; Technology: OptiMOS ; VDS (max): 55.0 V; RDS (on) (max) (@10V): 7.7 mOhm; ID (max): 80.0 A; RthJC (max): 0.7 K/W; | Original | |||
IPB80N06S208ATMA1 |
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 55V 80A TO263-3 | Original | |||
IPB80N06S208ATMA2 |
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 55V 80A TO263-3 | Original |