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    IPB08CN10N G Search Results

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    IPB08CN10N G Price and Stock

    Infineon Technologies AG IPB08CN10N-G

    MOSFET N-CH 100V 95A D2PAK
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    IPB08CN10N G Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IPB08CN10N G Infineon Technologies N-Channel MOSFETs (20V - 250V); Package: PG-TO263-3; Package: D2PAK (TO-263); VDS (max): 100.0 V; RDS (on) (max) (@10V): 8.5 mOhm; RDS (on) (max) (@4.5V): -; ID (max): 95.0 A; Original PDF
    IPB08CN10NG Infineon Technologies OptiMOS 2 Power-Transistor Original PDF
    IPB08CN10NG Infineon Technologies FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 95A TO263-3 Original PDF