IW4069UBN
Abstract: IW4049UB IW4069UB IW4069UBD
Text: IW4069UB HEX INVERTER High-Voltage Silicon-Gate CMOS The IW4069UB types consist of six inverter circuits. These devices are intended for all general-purpose inverter applications where the medium-power TTL-drive and logic-level-conversion capabilities of circuits such as the IW4049UB Hex Inverter/Buffers
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IW4069UB
IW4069UB
IW4049UB
IW4069UBN
IW4069UBD
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IW4049UB
Abstract: IW4069UB IW4069UBD IW4069UBN
Text: TECHNICAL DATA IW4069UB Hex Inverter High-Voltage Silicon-Gate CMOS The IW4069UB types consist of six inverter circuits. These devices are intended for all general-purpose inverter applications where the medium-power TTL-drive and logic-level-conversion capabilities of
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IW4069UB
IW4069UB
IW4049UB
IW4069UBN
IW4069UBD
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IW4069UBD
Abstract: IW4049UB IW4069UB IW4069UBN
Text: TECHNICAL DATA IW4069UB Hex Inverter High-Voltage Silicon-Gate CMOS The IW4069UB types consist of six inverter circuits. These devices are intended for all general-purpose inverter applications where the medium-power TTL-drive and logic-level-conversion capabilities of circuits such as the IW4049UB Hex Inverter/Buffers
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IW4069UB
IW4069UB
IW4049UB
IW4069UBN
IW4069UBD
IZ4069UB
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SL4069UB
Abstract: SL4069UBD SL4069UBN
Text: SL4069UB Hex Inverter High-Voltage Silicon-Gate CMOS The SL4069UB types consist of six inverter circuits. These devices are intended for all general-purpose inverter applications where the medium-power TTL-drive and logic-level-conversion capabilities of circuits such as the SL4049UB Hex Inverter/Buffers are not required.
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SL4069UB
SL4069UB
SL4049UB
SL4069UBN
SL4069UBD
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c04069
Abstract: ican-6466 RCA-C04069UB cd4069ub 60b6 C04049 I16C04069 schematic diagram pulse shaping cd4069u V/RCA CD4069UB
Text: CD4069UB Types COS/MOS Hex Inverter High-Voltage Types 20-Volt Rating The RCA-C04069UB types consist of six COS/MaS inverter circuits_ These devices are intended for all general-purpose inverter applications where' the medium-power TTLdrive and logic-level-conversion capabilities
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CD4069UB
20-Volt
RCA-C04069UB
C04009
92CS-32205
CD4069UBH.
c04069
ican-6466
60b6
C04049
I16C04069
schematic diagram pulse shaping
cd4069u
V/RCA CD4069UB
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BUX48
Abstract: BUX48A application BUX48A BUX48 mospec BUX48 datasheet bux48a equivalent
Text: MOSPEC SWITCHMODE SERIES NPN POWER TRANSISTORS NPN BUX48 BUX48A … designed for use in high-voltage, high-speed, power switching regulators, converter, converter, inverter, motor control system application. * Collector-Emitter Sustaining VoltageVCEO sus =400 V (Min)-BUX48
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BUX48
BUX48A
----BUX48
----BUX48A
---BUX48
BUX48
BUX48A application
BUX48A
BUX48 mospec
BUX48 datasheet
bux48a equivalent
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2SB825
Abstract: 2SD1061
Text: SavantIC Semiconductor Product Specification 2SB825 Silicon PNP Power Transistors DESCRIPTION •With TO-220 package ·Low saturation voltage ·Complement to type 2SD1061 APPLICATIONS ·Universal high current switching as solenoid driving;high speed inverter
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2SB825
O-220
2SD1061
2SB825
2SD1061
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2SB825
Abstract: 2SD1061
Text: Inchange Semiconductor Product Specification 2SB825 Silicon PNP Power Transistors DESCRIPTION ・With TO-220 package ・Low saturation voltage ・Complement to type 2SD1061 APPLICATIONS ・Universal high current switching as solenoid driving;high speed inverter
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2SB825
O-220
2SD1061
2SB825
2SD1061
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BUX48
Abstract: No abstract text available
Text: NPN BUX48 VERY HIGH VOLTAGE POWER TRANSISTOR The BUX48 is silicon multiepitaxial mesa NPN transistors in Jedec TO-3. They are a high voltage, high speed and they are intended for use in converters, inverter, switching regulator, motor control systems. ABSOLUTE MAXIMUM RATINGS
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BUX48
BUX48
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2SB825
Abstract: 2SD1061
Text: JMnic Product Specification 2SB825 Silicon PNP Power Transistors DESCRIPTION ・With TO-220 package ・Low saturation voltage ・Complement to type 2SD1061 APPLICATIONS ・Universal high current switching as solenoid driving;high speed inverter and converter applications
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2SB825
O-220
2SD1061
2SB825
2SD1061
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BU921
Abstract: bu921 equivalent
Text: SavantIC Semiconductor Product Specification BU921 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·High current;high voltage ·DARLINGTON APPLICATIONS ·Designed for automotive ignition applications and inverter circuits for motor control.
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BU921
140mA
BU921
bu921 equivalent
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12vdc to 230vac mosfet inverter
Abstract: schematic diagram dc-ac inverter 12V DC to 230V AC inverters circuit diagram dc to ac inverter schematic diagram schematic diagram inverter 12v to 5v 30a 12v to 230v inverters circuit diagrams 12v dc full wave bridge rectifier schematic diagram UPS inverter CA4013 inverter 12vdc/ 230vac
Text: A DC-AC Isolated Battery Inverter Using the HIP4082 Application Note February 2003 AN9611.1 Author: George E. Danz WARNING The HIP4082EVAL DC-AC Inverter contains HIGH VOLTAGE and is a potential shock hazard. USE CARE when DC power is connected. Introduction
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HIP4082
AN9611
HIP4082EVAL
HIP4082
12vdc to 230vac mosfet inverter
schematic diagram dc-ac inverter
12V DC to 230V AC inverters circuit diagram
dc to ac inverter schematic diagram
schematic diagram inverter 12v to 5v 30a
12v to 230v inverters circuit diagrams
12v dc full wave bridge rectifier
schematic diagram UPS inverter
CA4013
inverter 12vdc/ 230vac
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BU922
Abstract: npn darlington 500v 2a
Text: SavantIC Semiconductor Product Specification BU922 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·High current;high voltage ·DARLINGTON APPLICATIONS ·Designed for automotive ignition applications and inverter circuits for motor control.
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BU922
140mA
BU922
npn darlington 500v 2a
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BD142
Abstract: Comset
Text: BD142 NPN SILICON TRANSISTOR POWER LINERAR AND SWITCHING APPLICATIONS LF Large Signal Power Amplification Low Saturation Voltage High Dissipation Rating Intended for a wide variety of intermediate-power applications. It is especially suited for use in audio and inverter circuits at 12 volts.
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BD142
BD142
Comset
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BD142
Abstract: Comset Semiconductors
Text: BD142 NPN SILICON TRANSISTOR POWER LINERAR AND SWITCHING APPLICATIONS LF Large Signal Power Amplification Low Saturation Voltage High Dissipation Rating Intended for a wide variety of intermediate-power applications. It is especially suited for use in audio and inverter circuits at 12 volts.
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BD142
BD142
Comset Semiconductors
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LB123T
Abstract: marking 2332
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors LB123T TRANSISTOR NPN TO-126 FEATURES 1. EMITTER High voltage, high speed power switch z Switch regulators z PWM inverter and Motor controls z Solenoid and relay drivers
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O-126
LB123T
O-126
100mA,
300mA,
width380s,
LB123T
marking 2332
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LB123T
Abstract: TO126
Text: LB123T NPN Epitaxial Planar Transistors 1. EMITTER 2. COLLECTOR 3. BASE P b Lead Pb -Free 1 2 3 TO-126 *High voltage, high speed power switch *Switch regulators *PWM inverter and Motor controls *Solenoid and relay drivers *Deflection circuits a Rating Symbol
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LB123T
O-126
10-Jul-07
O-126
290TYP
LB123T
TO126
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MIG10J503L
Abstract: No abstract text available
Text: MIG10J503L TOSHIBA Intelligent Power Module MIG10J503L MIG10J503L is an intelligent power module for three-phase inverter system. The 4th generation low saturation voltage trench gate IGBT and FRD are connected to a three-phase full bridge type, and IC by the original high-voltage SOI
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MIG10J503L
MIG10J503L
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Untitled
Abstract: No abstract text available
Text: MIG15J503H TOSHIBA Intelligent Power Module MIG15J503H MIG15J503H is an intelligent power module for three-phase inverter system. The 4th generation low saturation voltage trench gate IGBT and FRD are connected to a three-phase full bridge type, and IC by the original high-voltage SOI
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MIG15J503H
MIG15J503H
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MIG20J503L
Abstract: No abstract text available
Text: MIG20J503L TOSHIBA Intelligent Power Module MIG20J503L MIG20J503L is an intelligent power module for three-phase inverter system. The 4th generation low saturation voltage trench gate IGBT and FRD are connected to a three-phase full bridge type, and IC by the original high-voltage SOI
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MIG20J503L
MIG20J503L
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MIG20J503H
Abstract: 300VVcc
Text: MIG20J503H TOSHIBA Intelligent Power Module MIG20J503H MIG20J503H is an intelligent power module for three-phase inverter system. The 4th generation low saturation voltage trench gate IGBT and FRD are connected to a three-phase full bridge type, and IC by the original high-voltage SOI
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MIG20J503H
MIG20J503H
300VVcc
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voltage regulator IC 723
Abstract: MJE13006 6221 ic IC 723 voltage regulator applications
Text: MJE13006 NPN POWER TRANSISTORS 300 VOLTS 8 AMP, 80 WATTS Designed for switching regulator, DC-DC converter, AC-DC inverter, high voltage, high speed switching applications. COLLECTOR Features: • v CEO sus = 300V (Min). • VCEV = 600V blocking capability
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MJE13006
t0-220ab
voltage regulator IC 723
MJE13006
6221 ic
IC 723 voltage regulator applications
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743 ic
Abstract: JE13009 MJE13009 IC 741 AMP
Text: MJE13009 NPN POWER TRANSISTORS 400 VOLTS 12 AMP, 100 WATTS Designed for switching regulator, DC-DC converter, AC-DC inverter, high voltage, high speed switching applications. NPN COLLECTOR Features: • VCEO sus - 400V (Min). • VCEV = 700V blocking capability
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MJE13009
T0-220-AB
MJE13009
743 ic
JE13009
IC 741 AMP
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mje13008
Abstract: C735
Text: MJE13008 NPN POWER TRANSISTORS 300 VOLTS 12 AMP, 100 WATTS Designed for switching regulator, DC-DC converter, AC-DC inverter, high voltage, high speed switching applications. NPN COLLECTOR Features: • VCEO sus = 300V (Min). • VCEV = 600V blocking capability
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MJE13008
mje13008
C735
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