POWER BJTs
Abstract: AN1540 IXYS SCR Gate Drive vertical pnp bjt failure analysis IGBT Drive Base BJT Nippon capacitors IGBT tail time
Text: MOTOROLA Order this document by AN1540/D SEMICONDUCTOR APPLICATION NOTE AN1540 Application Considerations Using Insulated Gate Bipolar Transistors IGBTs Prepared by: C.S. Mitter Motorola Inc. DEVICE CHARACTERISTICS The recently introduced Insulated Gate Bipolar Transistor
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AN1540/D
AN1540
AN1540/D*
POWER BJTs
AN1540
IXYS SCR Gate Drive
vertical pnp bjt
failure analysis IGBT
Drive Base BJT
Nippon capacitors
IGBT tail time
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PJ 986
Abstract: pj 986 diode 20N50A pj 809 20n50 IGTH20N40D 20N40 20N50D IGTH20N40AD IGTH20N50AD
Text: - Insulated-Gate Bipolar Transistors IGTH20N4QD, IGTH20N40AD, IGTH20N50D, IGTH20N50AD File Number 2271 N-Channel Enhancement-Mode Insulated Gate Bipolar Transistors IGBTs
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IGTH20N4QD,
IGTH20N40AD,
IGTH20N50D,
IGTH20N50AD
IGTH20N40D,
IGTH20N50AD
PJ 986
pj 986 diode
20N50A
pj 809
20n50
IGTH20N40D
20N40
20N50D
IGTH20N40AD
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Untitled
Abstract: No abstract text available
Text: International pmia ^Rectifier_ IRGMC40U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Description Product Summary Insulated Gate Bipolar Transistors IGBTs from International Rectifier have higher current den sities than comparable bipolar transistors, while
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IRGMC40U
MIL-S-1950G
T0-254
S54S2
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10N50A
Abstract: 10n400 10N40 AN7264 10N50AD 20n50 10N50D 10n5 IGTH10N50D IGTH10N40D
Text: -File Num ber Insulated-Gate Bipolar Transistors IGTH10N40D, IGTH10N40AD, IGTH10N50D, IGTH10N50AD 2273 N-Channel Enhancement-Mode Insulated Gate Bipolar Transistors IGBTs With Anti-Parallel Ultra-Fast Diode
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IGTH10N40D,
IGTH10N40AD,
IGTH10N50D,
IGTH10N50AD
IGTH10N50AD
2CS-42
10N50A
10n400
10N40
AN7264
10N50AD
20n50
10N50D
10n5
IGTH10N50D
IGTH10N40D
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IRGAC50U
Abstract: transistor G46 IGBT g48 ge 142 bt 34w
Text: International Rectifier PD-9.726A IRGAC50U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Description Product Summary Insulated Gate Bipolar Transistors IGBTs from International Rectifier have higher current den sities than comparable bipolar transistors, while
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pd926a
IRGAC50U
001flb5G
IRGAC50U
transistor G46
IGBT g48
ge 142
bt 34w
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2sc 1740 TRANSISTOR equivalent
Abstract: 40HFL60 IRGMC40F 480V1
Text: International Hg] Rectifier PD-9.716A IRGMC40F INSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBT Description Product Summary Insulated Gate Bipolar Transistors IGBTs from International Rectifier have higher current den sities than comparable bipolar transistors, while
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pd96a
IRGMC40F
IRGMC40FD
IRGMC40FU
MIL-S-19500
O-254
2sc 1740 TRANSISTOR equivalent
40HFL60
IRGMC40F
480V1
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Untitled
Abstract: No abstract text available
Text: International ! r]Rectifier PD-9.718A IRGMC50F INSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBT Description Product Summary Insulated Gate Bipolar Transistors IGBTs from International Rectifier have higher current den sities than comparable bipolar transistors, while
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IRGMC50F
IRGMC50FD
IRGMC50FU
O-254
4fiSS45S
MIL-S-19500
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Untitled
Abstract: No abstract text available
Text: International S Rectifier PD-9.722A IRGAC30U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Description Product Summary Insulated Gate Bipolar Transistors IGBTs from International Rectifier have higher current den sities than comparable bipolar transistors, while
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IRGAC30U
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IR 92 0151
Abstract: IRGAC40F IRGAC40 transistor g23
Text: International TOR PD-9.723A ]Rectifier IRGAC40F INSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBT Description Product Summary Insulated Gate Bipolar Transistors IGBTs from International Rectifier have higher current den sities than comparable bipolar transistors, while
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IRGAC40F
IR 92 0151
IRGAC40
transistor g23
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100-C
Abstract: IRGMC30F 9714A
Text: International ioR Rectifier PD-9.714A IRGMC30F INSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBT Description Product Summary Insulated Gate Bipolar Transistors IGBTs from International Rectifier have higher current den sities than comparable bipolar transistors, while
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IRGMC30F
IRGMC30FD
IRGMC30FU
mil-s-19500
O-254
100-C
IRGMC30F
9714A
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ir*c30ud
Abstract: IRGMC30U
Text: International Ira*]Rectifier PD-9.715A IRGMC30U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Description Product Summary Insulated Gate Bipolar Transistors IGBTs from International Rectifier have higher current den sities than comparable bipolar transistors, while
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IRGMC30U
IRGMC30UD
IRGMC30UU
MIL-S-19500
O-254
ir*c30ud
IRGMC30U
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til 31a
Abstract: IRGMC40U
Text: International ïor iRectifier PD-9.717A IRGMC40U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Description Product Summary Insulated Gate Bipolar Transistors IGBTs from International Rectifier have higher current den sities than comparable bipolar transistors, while
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IRGMC40U
IRGMC40UD
IRGMC40UU
MIL-S-19500
O-254
til 31a
IRGMC40U
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IRGAC50F
Abstract: G37 IC J3060 transistor g35 ecs g41 IRGAC50
Text: International lü ] Rectifier PD-9.725A IRGAC50F INSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBT Description Product Summary Insulated Gate Bipolar Transistors IGBTs from International Rectifier have higher current den sities than comparable bipolar transistors, while
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IRGAC50F
40HFL60
S54S5
lflb43
SS452
lflb44
G37 IC
J3060
transistor g35
ecs g41
IRGAC50
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transistor 9721
Abstract: 9721 mosfet to3
Text: International S Rectifier PD-9.721 A IRGAC30F INSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBT Description Product Summary Insulated Gate Bipolar Transistors IGBTs from International Rectifier have higher current den sities than comparable bipolar transistors, while
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IRGAC30F
DD10bl5
transistor 9721
9721
mosfet to3
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Untitled
Abstract: No abstract text available
Text: International pm a Hü Rectifier_ IRGMC50U INSULATED GATE BIPOLAR TRANSISTOR UltraFast™ IGBT Description Product Summary Insulated Gate Bipolar Transistors IGBTs from International Rectifier have higher current den sities than comparable bipolar transistors, while
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IRGMC50U
O-254
IRGMC50UD
IRGMC50UU
G-105
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Untitled
Abstract: No abstract text available
Text: International pd-9 a igR]Rectifier_ IRGMC30F INSULATED GATE BIPOLAR TRANSISTO R Fast Speed IGBT Description Product Summary Insulated Gate Bipolar Transistors IGBTs from International Rectifier have higher current den sities than comparable bipolar transistors, while
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IRGMC30F
IRGMC30FD
IRGMC30FU
O-254
IL-S-19500
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T3D 87
Abstract: t3d 99 G-100 IRGMC50U
Text: International [^Rectifier PD-9.719A IRGMC50U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT D escription Product Sum m ary Insulated Gate Bipolar Transistors IGBTs from International Rectifier have higher current den sities than comparable bipolar transistors, while
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IRGMC50U
IRGMC50U
IRGMC50UD
IRGMC50UU
MIL-S-19500
O-254
G-105
T3D 87
t3d 99
G-100
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Untitled
Abstract: No abstract text available
Text: International ««•"« B H Rectifier_ IRGMC40F INSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBT Description Product Summary Insulated Gate Bipolar Transistors IGBTs from International Rectifier have higher current den sities than comparable bipolar transistors, while
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IRGMC40F
IRGMC40FD
IRGMC40FU
MIL-S-19500
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IGT6D21
Abstract: IGT6E21
Text: IGT6D21.E21 Insulated Gate Bipolar Transistor This IG T " Transistor Insulated Gate Bipolar Transistor is a new type of MOS-gate turn on/off power switching device combining the best advantages of power MOSFETS and bipolar transistors. The result is a device that has the high
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IGT6D21
-f--10%
IGT6E21
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IGBTs Transistors
Abstract: igbts
Text: MÌO ^ Insulated Gate Bipolar Transistor IGBT Insulated Gate Bipolar Transistors (IGBTs from International Rectifier combine the characteristics of established HEXFET power MOSFETs with high-current, low saturation voltage capability of bipolar transistors, and the peak current capability of two larger
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300/1000/1200V
IGBTs Transistors
igbts
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Transistor g29
Abstract: IRGAC40U IRGAC40 I/SMD transistor g29
Text: International 5« i Rectifier PD-9.724A IRGAC40U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT j Description Product Sum m ary Part Number V BR CES VcE(on) , ! | Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher current densities than comparable bipolar transistors, while
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IRGAC40U
4B55452
001Bb37
Transistor g29
IRGAC40
I/SMD transistor g29
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Untitled
Abstract: No abstract text available
Text: International S Rectifier PD-9.715A IRGMC30U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Description Product Summary Insulated G ate Bipolar Transistors IGBTs from International Rectifier have higher current d en sities than com parable bipolar transistors, while
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IRGMC30U
IRGMC30UD
IRGMC30UU
O-254
4flS5455
001flb73
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Insulated Gate Bipolar Transistors
Abstract: No abstract text available
Text: SELECTION GUIDE Page TOPFETs 14 PowerMOS Transistors 16 Insulated Gate Bipolar Transistors 23
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vqe 24 d
Abstract: vqe 24 e VQE 23 E vqe 23 vqe 14 E VQE 21 d vqe 23 f vqe 23 c IGT6D20 IGT6E20
Text: IGT6D20,E20 20 AMPERES 400,500 VOLTS EQUIV. Rd S ON = 0.12 0 Insulated Gate Bipolar Transistor This IG T" Transistor (Insulated Gate Bipolar Transistor) is a new type of MOS-gate turn on/off power switching device combining the best advantages of power MOSFETS and
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IGT6D20
vqe 24 d
vqe 24 e
VQE 23 E
vqe 23
vqe 14 E
VQE 21 d
vqe 23 f
vqe 23 c
IGT6E20
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