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    INDUCTOR VK200 Search Results

    INDUCTOR VK200 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    DFE2016CKA-1R0M=P2 Murata Manufacturing Co Ltd Fixed IND 1uH 1800mA NONAUTO Visit Murata Manufacturing Co Ltd
    LQW18CN55NJ0HD Murata Manufacturing Co Ltd Fixed IND 55nH 1500mA POWRTRN Visit Murata Manufacturing Co Ltd
    LQW18CNR56J0HD Murata Manufacturing Co Ltd Fixed IND 560nH 450mA POWRTRN Visit Murata Manufacturing Co Ltd
    DFE322520F-2R2M=P2 Murata Manufacturing Co Ltd Fixed IND 2.2uH 4400mA NONAUTO Visit Murata Manufacturing Co Ltd
    LQW18CN4N9D0HD Murata Manufacturing Co Ltd Fixed IND 4.9nH 2600mA POWRTRN Visit Murata Manufacturing Co Ltd

    INDUCTOR VK200 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    RG316-25

    Abstract: 25 ohm semirigid diode t25 4 L5 850 ohm potentiometer RF TRANSFORMER, PIN THRU MOUNT, 2-30 MHz vk200 ferrite bead 220 k ohm potentiometer VK200 INDUCTOR vk200.10 diode gp 434
    Text: SD2932 RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs • GOLD METALLIZATION • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION, PUSH PULL • POUT = 300 W MIN. WITH 15 dB GAIN @ 175 MHz DESCRIPTION The SD2932 is a gold metallized N-Channel MOS


    Original     		PDF SD2932 SD2932 RG316-25 25 ohm semirigid diode t25 4 L5 850 ohm potentiometer RF TRANSFORMER, PIN THRU MOUNT, 2-30 MHz vk200 ferrite bead 220 k ohm potentiometer VK200 INDUCTOR vk200.10 diode gp 434

    RG316-25

    Abstract: diode Zener t25 4 c8 T20 88 DIODE neosid diode t25 4 L5 MF variable CAPACITOR 50v Fair-Rite ATC 200B diode t25 4 c6 SD2932
    Text: SD2932 RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs • GOLD METALLIZATION • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION, PUSH PULL • POUT = 300 W MIN. WITH 15 dB GAIN @ 175 MHz M244 epoxy sealed DESCRIPTION The SD2932 is a gold metallized N-Channel MOS


    Original     		PDF SD2932 SD2932 RG316-25 diode Zener t25 4 c8 T20 88 DIODE neosid diode t25 4 L5 MF variable CAPACITOR 50v Fair-Rite ATC 200B diode t25 4 c6

    NEOSId

    Abstract: RG316-25
    Text: SD2932 RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs • GOLD METALLIZATION • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION, PUSH PULL • POUT = 300 W MIN. WITH 15 dB GAIN @ 175 MHz DESCRIPTION The SD2932 is a gold metallized N-Channel MOS


    Original     		PDF SD2932 SD2932 NEOSId RG316-25

    diode t25 4 L5

    Abstract: 4 carbon wire resistor ceramic capacitor 4.7 mf 50v variable resistor 4.7 k ohms DIODE T25 4 c8 diode L2.70 inductor vk200 resistance 220 ohm 220 k ohm resistor 470 OHM 50 W RESISTANCE
    Text: SD2932 RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs • GOLD METALLIZATION • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION, PUSH PULL • POUT = 300 W MIN. WITH 15 dB GAIN @ 175 MHz DESCRIPTION The SD2932 is a gold metallized N-Channel MOS


    Original     		PDF SD2932 SD2932 diode t25 4 L5 4 carbon wire resistor ceramic capacitor 4.7 mf 50v variable resistor 4.7 k ohms DIODE T25 4 c8 diode L2.70 inductor vk200 resistance 220 ohm 220 k ohm resistor 470 OHM 50 W RESISTANCE

    5W 6.8 ohm k ceramic resistor

    Abstract: 5W 47 ohm J ceramic resistor Variable resistor 10K ohm MARCON NH capacitor GC812 neosid* 10k mount chip transistor 13W SME63T10RM variable RESISTANCE 1 M OHM resistor 560 ohm
    Text: SD2922  RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs • ■ ■ ■ GOLD METALLIZATION EXCELLENT THERMAL STABILITY COMMON SOURCE CONFIGURATION POUT = 300W MIN. WITH 12.5 dB GAIN @175 MHz DESCRIPTION The SD2922 is a gold metallized N-Channel MOS field-effect RF power transistor. The SD2922 is


    Original     		PDF SD2922 SD2922 5W 6.8 ohm k ceramic resistor 5W 47 ohm J ceramic resistor Variable resistor 10K ohm MARCON NH capacitor GC812 neosid* 10k mount chip transistor 13W SME63T10RM variable RESISTANCE 1 M OHM resistor 560 ohm

    diode Zener t25 4 c5

    Abstract: diode gp 434 RG316-25 diode t25 4 L5 diode t25 4 c5 SD2932 200B 700B ST40 neosid
    Text: SD2932 RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs • GOLD METALLIZATION • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION, PUSH PULL • POUT = 300 W MIN. WITH 15 dB GAIN @ 175 MHz DESCRIPTION The SD2932 is a gold metallized N-Channel MOS


    Original     		PDF SD2932 SD2932 diode Zener t25 4 c5 diode gp 434 RG316-25 diode t25 4 L5 diode t25 4 c5 200B 700B ST40 neosid

    RF TRANSFORMER, PIN THRU MOUNT, 2-30 MHz

    Abstract: MARCON NH capacitor marcon capacitor nc inductor vk200 Variable resistor 10K ohm resistor 4.7k ohm neosid* 10k RG316 coaxial cable rs-2b resistor 8 pin SURFACE MOUNT RESISTOR
    Text: SD2932  RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs PRELIMINARY DATA ν ν ν ν GOLD METALLIZATION EXCELLENT THERMAL STABILITY COMMON SOURCE CONFIGURATION, PUSH-PULL POUT = 300W MIN. WITH 15 dB GAIN @175 MHz DESCRIPTION The SD2932 is a gold metallized N-Channel MOS


    Original     		PDF SD2932 SD2932 TSD2932 RF TRANSFORMER, PIN THRU MOUNT, 2-30 MHz MARCON NH capacitor marcon capacitor nc inductor vk200 Variable resistor 10K ohm resistor 4.7k ohm neosid* 10k RG316 coaxial cable rs-2b resistor 8 pin SURFACE MOUNT RESISTOR

    5W 6.8 ohm k ceramic resistor

    Abstract: 5W 47 ohm J ceramic resistor Variable resistor 10K ohm MARCON NH capacitor FAIR-RITE 2743021447 UT141-25 GRM43-4X7R-104K500 diode L2.70 C22-C23 GRM43-4X7r
    Text: SD2922 RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs • ■ ■ ■ GOLD METALLIZATION EXCELLENT THERMAL STABILITY COMMON SOURCE CONFIGURATION POUT = 300W MIN. WITH 12.5 dB GAIN @175 MHz DESCRIPTION The SD2922 is a gold metallized N-Channel MOS field-effect RF power transistor. The SD2922 is


    Original     		PDF SD2922 SD2922 5W 6.8 ohm k ceramic resistor 5W 47 ohm J ceramic resistor Variable resistor 10K ohm MARCON NH capacitor FAIR-RITE 2743021447 UT141-25 GRM43-4X7R-104K500 diode L2.70 C22-C23 GRM43-4X7r

    neosid* 10k

    Abstract: neosid* 5.6k 300w fm amplifier VK200 INDUCTOR inductor vk200 88-108 rf amplifier 300w amplifier balun transformer report balun 50 ohm 100 ohm AN rf 88-108mhz
    Text: AN1229 APPLICATION NOTE SD2932 RF MOSFET FOR 300W FM AMPLIFIER Serge Juhel 1. ABSTRACT This application note gives a description of a broadband power amplifier operating over the frequency range 88 - 108 MHz and using the new STMicroelectronics RF MOSFET transistor SD2932.


    Original     		PDF AN1229 SD2932 SD2932. SD2932 neosid* 10k neosid* 5.6k 300w fm amplifier VK200 INDUCTOR inductor vk200 88-108 rf amplifier 300w amplifier balun transformer report balun 50 ohm 100 ohm AN rf 88-108mhz

    inductor vk200

    Abstract: RTL 602 W 300w fm amplifier neosid* 10k VK200 INDUCTOR VK200 inductor of high frequencies neosid "RF MOSFET" 300W 300 ohms balun 300w amplifier
    Text: AN1229 APPLICATION NOTE SD2932 RF MOSFET FOR 300W FM AMPLIFIER Serge Juhel 1. ABSTRACT This application note gives a description of a broadband power amplifier operating over the frequency range 88 - 108 MHz and using the new STMicroelectronics RF MOSFET transistor SD2932.


    Original     		PDF AN1229 SD2932 SD2932. SD2932 inductor vk200 RTL 602 W 300w fm amplifier neosid* 10k VK200 INDUCTOR VK200 inductor of high frequencies neosid "RF MOSFET" 300W 300 ohms balun 300w amplifier

    inductor vk200

    Abstract: 10A ferrite bead 25 ohm semirigid ZENER MARKING C8 ST vk200 ferrite bead ceramic capacitor 4.7 mf 50v variable resistor 4.7 k ohms VK200 FERRITE diode L2.70 MARKING code mf stmicroelectronics
    Text: SD2932 RF power transistors HF/VHF/UHF N-channel MOSFETs Features • Gold metallization ■ Excellent thermal stability ■ Common source configuration, push-pull ■ POUT = 300 W min. with 15 dB gain @ 175 MHz Description The SD2932 is a gold metallized N-channel MOS


    Original     		PDF SD2932 SD2932 inductor vk200 10A ferrite bead 25 ohm semirigid ZENER MARKING C8 ST vk200 ferrite bead ceramic capacitor 4.7 mf 50v variable resistor 4.7 k ohms VK200 FERRITE diode L2.70 MARKING code mf stmicroelectronics

    SD2932

    Abstract: 200B 700B RG316 ST40 SD2932 reference T20 56 diode diode Zener t25 4 c5
    Text: SD2932 RF power transistors HF/VHF/UHF n-channel MOSFETs Features • Gold metallization ■ Excellent thermal stability ■ Common source configuration, push-pull ■ POUT = 300 W min. with 15 dB gain @ 175 MHz Description The SD2932 is a gold metallized n-channel MOS


    Original     		PDF SD2932 SD2932 200B 700B RG316 ST40 SD2932 reference T20 56 diode diode Zener t25 4 c5

    Untitled

    Abstract: No abstract text available
    Text: SD2932 HF/VHF/UHF RF power N-channel MOSFETs Features • Gold metallization ■ Excellent thermal stability ■ Common source configuration, push-pull ■ POUT = 300 W min. with 15 dB gain @ 175 MHz Description The SD2932 is a gold metalized N-channel MOS


    Original     		PDF SD2932 SD2932 SD2932W

    ZENER MARKING C8 ST

    Abstract: CAPACITOR 64 680 4J diode t25 4 L5 SD2932 neosid RG316-25 vk200 ferrite bead SD2932W diode marking 100b
    Text: SD2932 HF/VHF/UHF RF power N-channel MOSFETs Features • Gold metallization ■ Excellent thermal stability ■ Common source configuration, push-pull ■ POUT = 300 W min. with 15 dB gain @ 175 MHz Description The SD2932 is a gold metalized N-channel MOS


    Original     		PDF SD2932 SD2932 SD2932W ZENER MARKING C8 ST CAPACITOR 64 680 4J diode t25 4 L5 neosid RG316-25 vk200 ferrite bead SD2932W diode marking 100b

    MRF240

    Abstract: VK200 inductor of high frequencies choke vk200 VK200 4B inductor inductor vk200 VK200 INDUCTOR 2204B VK200 allen bradley 150
    Text: MOTOROLA Order this document by MRF240/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistors MRF240 . . . designed for 13.6 volt VHF large–signal class C and class AB linear power amplifier applications in commercial and industrial equipment.


    Original     		PDF MRF240/D MRF240 MRF240/D* MRF240 VK200 inductor of high frequencies choke vk200 VK200 4B inductor inductor vk200 VK200 INDUCTOR 2204B VK200 allen bradley 150

    MRF240

    Abstract: BUY60 MRF240 equivalent
    Text: MOTOROLA Order this document by MRF240/D SEMICONDUCTOR TECHNICAL DATA MRF240 . . . designed for 13.6 volt VHF large–signal class C and class AB linear power amplifier applications in commercial and industrial equipment. • High Common Emitter Power Gain


    Original     		PDF MRF240/D MRF240 MRF240 MRF240/D* MRF240/D BUY60 MRF240 equivalent

    MARCON NH capacitor

    Abstract: UT141-25 neosid* 10k UT-141-25 4.7kohm trimmer RG316-25 mount chip transistor 13W diode L2.70 ferrite core shield transformer pin connection vk200 ferrite bead
    Text: SD2922 RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs . GOLD METALLIZATION . EXCELLENT THERMAL STABILITY . COMMON SOURCE CONFIGURATION . POUT = 300W MIN. WITH 12.5 dB GAIN @175 MHz DESCRIPTION The SD2922 is a gold metallized N-Channel MOS field-effect RF power transistor. The SD2922 is


    OCR Scan     		PDF SD2922 SD2922 PCI2170 020876A MARCON NH capacitor UT141-25 neosid* 10k UT-141-25 4.7kohm trimmer RG316-25 mount chip transistor 13W diode L2.70 ferrite core shield transformer pin connection vk200 ferrite bead

    VK200 INDUCTOR

    Abstract: inductor vk200 choke vk200 VK200 r.f choke MRF240 vk200 rf choke VK200 4B inductor VK200-4B allen bradley resistor
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistors . . . designed for 13.6 volt VHF large-signal class C and class AB linear power amplifier applications in commercial and industrial equipment. • High Common Emitter Power Gain


    OCR Scan     		PDF MRF240 VK200 INDUCTOR inductor vk200 choke vk200 VK200 r.f choke vk200 rf choke VK200 4B inductor VK200-4B allen bradley resistor

    VK200 INDUCTOR

    Abstract: inductor vk200 VK200 4B inductor choke vk200 MRF240 Unelco Bradley Semiconductor allen bradley resistor VK200-4B
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistors . . . designed for 13.6 volt V H F large-signal class C and class AB linear power amplifier applications in commercial and industrial equipment. • High Common Emitter Power Gain


    OCR Scan     		PDF MRF240 VK200 INDUCTOR inductor vk200 VK200 4B inductor choke vk200 Unelco Bradley Semiconductor allen bradley resistor VK200-4B

    VK200 INDUCTOR

    Abstract: inductor vk200
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power F ield -E ffect Transistors MRF175LU MRF175LV N-Channel Enhancement-Mode Designed for broadband commercial and military applications using single ended circuits at frequencies to 400 MHz. The high power, high gain and


    OCR Scan     		PDF MRF175LU MRF175LV MRF175L MRF175LU MRF175LV VK200 INDUCTOR inductor vk200

    J115 mosfet

    Abstract: MRF175LU
    Text: MOTOROLA SEM ICO NDU CTO R TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect T ransistors MRF175LU M RF175LV N-Channel Enhancement-Mode Designed for broadband commercial and military applications using single ended circuits at frequencies to 400 MHz. The high power, high gain and


    OCR Scan     		PDF MRF175LU MRF175LV 28cal MRF175L MRF175LU MRF175LV J115 mosfet

    VK200 inductor of high frequencies

    Abstract: VK200 INDUCTOR
    Text: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA M R F175LV M R F175LU The RF MOSFET Line RF P o w er F ie ld -E ffe ct Transistors N-Channel Enhancement-Mode 100 W, 28 V, 400 MHz N-CHANNEL BROADBAND RF POWER FETs . . . designed for broadband commercial and military appli cations using single


    OCR Scan     		PDF MRF175LV MRF175LU MRF175L MRF175LV MRF175LU VK200 inductor of high frequencies VK200 INDUCTOR

    VK200 INDUCTOR

    Abstract: inductor vk200 VK200 inductor of high frequencies
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Pow er F ield -E ffect Transistors MRF175LU MRF175LV N-Channel Enhancement-Mode Designed for broadband com m ercial and military applications using single ended circuits at frequencies to 400 MHz. The high power, high gain and


    OCR Scan     		PDF RF175LU MRF175LV F175L MRF175LU MRF175LV VK200 INDUCTOR inductor vk200 VK200 inductor of high frequencies

    VK200 INDUCTOR

    Abstract: MRF164 gogo board MRF164W inductor vk200 vk200
    Text: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA M R F164W The RF TMOS Line P o w er Field E ffe c t Transistor Motorola Preferred Devices N-Channel Enhancement Mode Designed primarily for wideband large-signal output and driver stages to 500 MHz. • Guaranteed Performance at 400 MHz, 28 Vdc


    OCR Scan     		PDF F164W MRF164W VK200 INDUCTOR MRF164 gogo board inductor vk200 vk200