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    1N4153UR-1

    Abstract: CDLL4153 DO-213AA LL34
    Text: 1N4153UR-1 CDLL4153 1N4153UR-1 AVAILABLE IN JAN, JANTX, AND JANTXV PER MIL-PRF-19500/337 • SWITCHING DIODE • HERMETICALLY SEALED • METALLURGICALLY BONDED • DOUBLE PLUG CONSTRUCTION MAXIMUM RATINGS Junction Temperature: -65°C to +175°C Storage Temperature: -65°C to +175°C


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    1N4153UR-1 CDLL4153 1N4153UR-1 MIL-PRF-19500/337 IN4153UR-1 CDLL4153 DO-213AA LL34 PDF

    in4153

    Abstract: c 337 25 1N4153 1N4153-1 D0-35
    Text: • 1N4153 and 1N4153-1 AVAILABLE IN JAN, JANTX, AND JANTXV PER MIL-PRF-19500/337 1N4153 and 1N4153-1 • SWITCHING DIODES • HERMETICALLY SEALED • METALLURGICALLY BONDED • DOUBLE PLUG CONSTRUCTION MAXIMUM RATINGS Junction Temperature: -65°C to +175°C


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    1N4153 1N4153-1 MIL-PRF-19500/337 1N4153 1N4153-1 IN4153 IN4153-1 in4153 c 337 25 D0-35 PDF

    IN2222A

    Abstract: transitron catalog TCR43 TM106 IN443 1n9448 sv4091 IN4868 diode 3N68 IN536
    Text: ron Tro nsitron electronic corporation e I ron 168 Albion Street . Wakefield. Massachusetts 01881 WAKEFIELD, MASSACHUSE TTS BOSTON, MASSACHUSETTS MELROSE, MASSACHUSETTS NUEVO LAREDO, MEXICO BERKSHIRE, ENGLAND PARIS, FRANCE AMSTERDAM, THE NETHERLANDS ~ ciectl'onic corpOI'atioll


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    IC HXJ 2038

    Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


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    IN4153

    Abstract: 1N4153 1N4153-1 IN4153-1
    Text: JAN, JANTX, •1N4153 and 1N4153-1 AVAILABLE IN AND JANTXV 1N4153 and 1N4153-1 PER MlL-PRF-19500/337 'SW ITCHING DIODES 'H E R M ETIC A LLY SEALED ' METALLURGICALLY BONDED ' DOUBLE PLUG CONSTRUCTION MAXIMUM RATINGS Ju n ctio n T e m p e ra tu re : -6 5°C to + 17 5°C


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    1N4153 1N4153-1 MlL-PRF-19500/337 1N4153 MIL-S-19500/337 DO-35 IN4153 IN4153-1 IN4153-1 PDF

    in4151

    Abstract: IN4150 IN4153 IN4153 diode N4150 1N4150 1N4151 1N4153 IEC134
    Text: • bbSB'm N AUER 202 ooab^oa 1N4150 1N4151 1N4153 hapx PHILIPS/DISCRETE bTE D ULTRA-HIGH-SPEED SILICON DIODES Whiskerless diodes in su b m in ia tu re DO -35 envelopes. T he IN 4 1 5 0 is p rim a rily intended fo r general purpose use in co m p u te r and in d u stria l applications.


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    bb53131 1N4150 1N4151 1N4153 DO-35 IN4150 IN4151 IN4153 N4150 IN4153 diode 1N4150 1N4151 1N4153 IEC134 PDF

    in4153

    Abstract: DIODE SOD-80 JANTX IN4153UR-1
    Text: • 1N4153UR-1 AVAILABLE IN JAN, 1N4153UR-1 CDLL4153 JANTX, AND JANTXV PER MIL-PRF-19500/337 • SWITCHING DIODE • HERMETICALLY SEALED • METALLURGICALLY BONDED • DOUBLE PLUG CONSTRUCTION MAXIMUM RATINGS Junction Temperature: -65°C to +175°C Storage Temperature: -65°C to +175°C


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    1N4153UR-1 MIL-PRF-19500/337 CDLL4153 0063I IN4153UR-1 in4153 DIODE SOD-80 JANTX PDF

    IN4153

    Abstract: No abstract text available
    Text: • 1N4153 and 1N4153-1 AVAILABLE IN JAN, JANTX, AND JANTXV 1N4153 and 1N4153-1 PER MIL-PRF-19500/337 • SWITCHING DIODES • HERMETICALLY SEALED • METALLURGICALLY BONDED • DOUBLE PLUG CONSTRUCTION MAXIMUM RATINGS Junction Temperature: -65°C to +175°C


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    1N4153 1N4153-1 MIL-PRF-19500/337 1N4153-1 IN4153 IN4153-1 PDF

    LL34

    Abstract: 1N4153UR-1 CDLL4153 DO-213AA JANTX, JX, JAN IN4153UR-1
    Text: •1N4153UR-1 AVAILABLE IN JAN, JANTX, AND 1N4153UR-1 C D LL4153 JANTXV PER MlL-PRF-19500/337 'SW ITCHING DIODE 'H E R M ETIC A LLY SEALED ' METALLURGICALLY BONDED ' DOUBLE PLUG CONSTRUCTION MAXIMUM RATINGS Ju n ctio n T e m p e ra tu re : -6 5°C to + 17 5°C


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    1N4153UR-1 F-19500/337 CDLL4153 CDLL4153 IN4153UR-1 LL34 DO-213AA JANTX, JX, JAN PDF

    LG color tv Circuit Diagram schematics

    Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


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    3186J LG color tv Circuit Diagram schematics free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007 PDF

    TIS43

    Abstract: equivalent of transistor bc214 BF257 Texas equivalent of transistor bc212 bc 214 2N696 TEXAS INSTRUMENTS Q2T2222 TIS70 BFR40 kd 2060 transistor BF195 equivalent
    Text: The Transistor and Diode Data Book for Design Engineers Volume II Northern European Edition IMPORTANT NOTICES Texas Instrum ents Ltd ., reserves the rig h t to make changes at any tim e in order to improve design and to supply the best p ro d u c t possible.


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    2S301 BS9300-C-598 2S305 BS9300-C-366 2S307 2S322 CV7396 BS9300-C-396 CV7647 BS9300-C-647 TIS43 equivalent of transistor bc214 BF257 Texas equivalent of transistor bc212 bc 214 2N696 TEXAS INSTRUMENTS Q2T2222 TIS70 BFR40 kd 2060 transistor BF195 equivalent PDF

    IN4152

    Abstract: IN4606 in4447 IN916B IN4608 IN917 IN4150 in914b IN4149 IN4164
    Text: 1 Small Signal Diodes Explanation of Device Coding Devices prefixed " 1 N " are JG DEC Joint Electronic Device Engineering Council registered devices. These-type numbers are recognised in the USA. Devices prefixed " 1 S " are Texas Instruments in-house numbers.


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    IS960 IS961 DO-35 IN4152 IN4606 in4447 IN916B IN4608 IN917 IN4150 in914b IN4149 IN4164 PDF

    IN4149

    Abstract: cv8790 CV7040 Diode BAY 61 IS923 IN917 CV8617 texas is920 IS920 IN4448
    Text: 1 Small Signal Diodes Explanation of Device Coding Devices prefixed " 1 N " are JGDEC Joint Electronic Device Engineering Council registered devices. These-type numbers are recognised in the USA. Devices prefixed "1 S " are Texas Instruments in-house numbers.


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    CV8790 IS922 DO-35 CV9637 IN4448 DS59-61/03/302 BAY71 DS59-61/03/303 IN4149 CV7040 Diode BAY 61 IS923 IN917 CV8617 texas is920 IS920 PDF

    TELEVISION EHT TRANSFORMERS

    Abstract: BYW96E PH smd code Z9P germanium transistor BY527 EQUIVALENT BYD33D BAX12 BB212 BB515 BBY31
    Text: Philips Semiconductors Diodes Contents page SELECTION GUIDE Small-signal diodes 5 Tuner diodes 7 FM detection diodes 8 Low leakage diodes 8 Schottky barrier switching diodes 9 Stabistors Voltage regulators 9 10 Voltage reference diodes 11 Transient suppressor diodes


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    LCD01 TELEVISION EHT TRANSFORMERS BYW96E PH smd code Z9P germanium transistor BY527 EQUIVALENT BYD33D BAX12 BB212 BB515 BBY31 PDF

    IN3599

    Abstract: 1N9168 1N4242 IN485 IN625 1N20S 1N4389 1N4243 in648 IN458a
    Text: jomltron « • - _ SemitronicsCorp. ■ SS 481.1541= DD0DB05 3 ■ H iç rrp tp sem ico nd u c to r s IN T E X / SEMITRONICS CORP S7E D _ , , , / / / silicon diodes Reverse Current «A)150°C (See Notes) 5.0 SO 56 50 50 6.5 2.0 1.0 2.0 2.0 15 1.5


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    1N194A 1N195 1K200 1N201 JN202 IN4829 1N4J30 MP035Ã MPD302 MPB401 IN3599 1N9168 1N4242 IN485 IN625 1N20S 1N4389 1N4243 in648 IN458a PDF

    1N4151f

    Abstract: 1N4152 ditty 1N4151 1N4153 1N4154 J103 1N4151-1N4152-1N4153-1N4154
    Text: 1775470 C O D I SEMICONDUCTOR IN C -L U ,-— TO 90D 0 0 5 7 9 D y_ — // DE | l 7 7 S 4 7 D □ □□□57ci 5 äliiä CODI Semiconductor, Inc. 1N 4151-1N 4152-1N 4153-1N 4154 HIGH SPEED DIODES • SILICON PLANAR EPITAXIAL D O -35 OUTLINE • C .4 p F MAX


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    l77S47D 1N4151-1N4152-1N4153-1N4154 1-800-232-CQDI 7033il 1N4151f 1N4152 ditty 1N4151 1N4153 1N4154 J103 1N4151-1N4152-1N4153-1N4154 PDF

    1N6227

    Abstract: silec GG 84 1n623 2G300 chn 543 IC HXJ 2038 1N52398 IN5240 1n48 zener diode
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


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    IN3599

    Abstract: IN433A IN625 1N3068 1N218 1N4147 IN648 1N3069 1N3067 IN485
    Text: « • - _ j o m lt r o n SemitronicsCorp. ■ 481.1541= DD0DB05 3 ■ H iç rrp tp S S sem ico nd u c to r s IN T E X / SEMITRONICS CORP S7E D _ , , , / / / - <DI V t silicon diodes Reverse Current «A)150°C (See Notes) 5.0 SO 56 50 50 6.5 2.0


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    DD0DB05 IN3599 IN433A IN625 1N3068 1N218 1N4147 IN648 1N3069 1N3067 IN485 PDF