1N4153UR-1
Abstract: CDLL4153 DO-213AA LL34
Text: 1N4153UR-1 CDLL4153 • 1N4153UR-1 AVAILABLE IN JAN, JANTX, AND JANTXV PER MIL-PRF-19500/337 • SWITCHING DIODE • HERMETICALLY SEALED • METALLURGICALLY BONDED • DOUBLE PLUG CONSTRUCTION MAXIMUM RATINGS Junction Temperature: -65°C to +175°C Storage Temperature: -65°C to +175°C
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1N4153UR-1
CDLL4153
1N4153UR-1
MIL-PRF-19500/337
IN4153UR-1
CDLL4153
DO-213AA
LL34
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in4153
Abstract: c 337 25 1N4153 1N4153-1 D0-35
Text: • 1N4153 and 1N4153-1 AVAILABLE IN JAN, JANTX, AND JANTXV PER MIL-PRF-19500/337 1N4153 and 1N4153-1 • SWITCHING DIODES • HERMETICALLY SEALED • METALLURGICALLY BONDED • DOUBLE PLUG CONSTRUCTION MAXIMUM RATINGS Junction Temperature: -65°C to +175°C
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1N4153
1N4153-1
MIL-PRF-19500/337
1N4153
1N4153-1
IN4153
IN4153-1
in4153
c 337 25
D0-35
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IN2222A
Abstract: transitron catalog TCR43 TM106 IN443 1n9448 sv4091 IN4868 diode 3N68 IN536
Text: ron Tro nsitron electronic corporation e I ron 168 Albion Street . Wakefield. Massachusetts 01881 WAKEFIELD, MASSACHUSE TTS BOSTON, MASSACHUSETTS MELROSE, MASSACHUSETTS NUEVO LAREDO, MEXICO BERKSHIRE, ENGLAND PARIS, FRANCE AMSTERDAM, THE NETHERLANDS ~ ciectl'onic corpOI'atioll
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IC HXJ 2038
Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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IN4153
Abstract: 1N4153 1N4153-1 IN4153-1
Text: JAN, JANTX, •1N4153 and 1N4153-1 AVAILABLE IN AND JANTXV 1N4153 and 1N4153-1 PER MlL-PRF-19500/337 'SW ITCHING DIODES 'H E R M ETIC A LLY SEALED ' METALLURGICALLY BONDED ' DOUBLE PLUG CONSTRUCTION MAXIMUM RATINGS Ju n ctio n T e m p e ra tu re : -6 5°C to + 17 5°C
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1N4153
1N4153-1
MlL-PRF-19500/337
1N4153
MIL-S-19500/337
DO-35
IN4153
IN4153-1
IN4153-1
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in4151
Abstract: IN4150 IN4153 IN4153 diode N4150 1N4150 1N4151 1N4153 IEC134
Text: • bbSB'm N AUER 202 ooab^oa 1N4150 1N4151 1N4153 hapx PHILIPS/DISCRETE bTE D ULTRA-HIGH-SPEED SILICON DIODES Whiskerless diodes in su b m in ia tu re DO -35 envelopes. T he IN 4 1 5 0 is p rim a rily intended fo r general purpose use in co m p u te r and in d u stria l applications.
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bb53131
1N4150
1N4151
1N4153
DO-35
IN4150
IN4151
IN4153
N4150
IN4153 diode
1N4150
1N4151
1N4153
IEC134
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in4153
Abstract: DIODE SOD-80 JANTX IN4153UR-1
Text: • 1N4153UR-1 AVAILABLE IN JAN, 1N4153UR-1 CDLL4153 JANTX, AND JANTXV PER MIL-PRF-19500/337 • SWITCHING DIODE • HERMETICALLY SEALED • METALLURGICALLY BONDED • DOUBLE PLUG CONSTRUCTION MAXIMUM RATINGS Junction Temperature: -65°C to +175°C Storage Temperature: -65°C to +175°C
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1N4153UR-1
MIL-PRF-19500/337
CDLL4153
0063I
IN4153UR-1
in4153
DIODE SOD-80 JANTX
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IN4153
Abstract: No abstract text available
Text: • 1N4153 and 1N4153-1 AVAILABLE IN JAN, JANTX, AND JANTXV 1N4153 and 1N4153-1 PER MIL-PRF-19500/337 • SWITCHING DIODES • HERMETICALLY SEALED • METALLURGICALLY BONDED • DOUBLE PLUG CONSTRUCTION MAXIMUM RATINGS Junction Temperature: -65°C to +175°C
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1N4153
1N4153-1
MIL-PRF-19500/337
1N4153-1
IN4153
IN4153-1
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PDF
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LL34
Abstract: 1N4153UR-1 CDLL4153 DO-213AA JANTX, JX, JAN IN4153UR-1
Text: •1N4153UR-1 AVAILABLE IN JAN, JANTX, AND 1N4153UR-1 C D LL4153 JANTXV PER MlL-PRF-19500/337 'SW ITCHING DIODE 'H E R M ETIC A LLY SEALED ' METALLURGICALLY BONDED ' DOUBLE PLUG CONSTRUCTION MAXIMUM RATINGS Ju n ctio n T e m p e ra tu re : -6 5°C to + 17 5°C
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1N4153UR-1
F-19500/337
CDLL4153
CDLL4153
IN4153UR-1
LL34
DO-213AA
JANTX, JX, JAN
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LG color tv Circuit Diagram schematics
Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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3186J
LG color tv Circuit Diagram schematics
free transistor equivalent book 2sc
NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG
RCA SK CROSS-REFERENCE
KIA 4318
transistor cs 9012
Til 322A
sx3704
diode d.a.t.a. book
1N1007
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TIS43
Abstract: equivalent of transistor bc214 BF257 Texas equivalent of transistor bc212 bc 214 2N696 TEXAS INSTRUMENTS Q2T2222 TIS70 BFR40 kd 2060 transistor BF195 equivalent
Text: The Transistor and Diode Data Book for Design Engineers Volume II Northern European Edition IMPORTANT NOTICES Texas Instrum ents Ltd ., reserves the rig h t to make changes at any tim e in order to improve design and to supply the best p ro d u c t possible.
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2S301
BS9300-C-598
2S305
BS9300-C-366
2S307
2S322
CV7396
BS9300-C-396
CV7647
BS9300-C-647
TIS43
equivalent of transistor bc214
BF257 Texas
equivalent of transistor bc212 bc 214
2N696 TEXAS INSTRUMENTS
Q2T2222
TIS70
BFR40
kd 2060 transistor
BF195 equivalent
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IN4152
Abstract: IN4606 in4447 IN916B IN4608 IN917 IN4150 in914b IN4149 IN4164
Text: 1 Small Signal Diodes Explanation of Device Coding Devices prefixed " 1 N " are JG DEC Joint Electronic Device Engineering Council registered devices. These-type numbers are recognised in the USA. Devices prefixed " 1 S " are Texas Instruments in-house numbers.
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IS960
IS961
DO-35
IN4152
IN4606
in4447
IN916B
IN4608
IN917
IN4150
in914b
IN4149
IN4164
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IN4149
Abstract: cv8790 CV7040 Diode BAY 61 IS923 IN917 CV8617 texas is920 IS920 IN4448
Text: 1 Small Signal Diodes Explanation of Device Coding Devices prefixed " 1 N " are JGDEC Joint Electronic Device Engineering Council registered devices. These-type numbers are recognised in the USA. Devices prefixed "1 S " are Texas Instruments in-house numbers.
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CV8790
IS922
DO-35
CV9637
IN4448
DS59-61/03/302
BAY71
DS59-61/03/303
IN4149
CV7040
Diode BAY 61
IS923
IN917
CV8617
texas is920
IS920
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TELEVISION EHT TRANSFORMERS
Abstract: BYW96E PH smd code Z9P germanium transistor BY527 EQUIVALENT BYD33D BAX12 BB212 BB515 BBY31
Text: Philips Semiconductors Diodes Contents page SELECTION GUIDE Small-signal diodes 5 Tuner diodes 7 FM detection diodes 8 Low leakage diodes 8 Schottky barrier switching diodes 9 Stabistors Voltage regulators 9 10 Voltage reference diodes 11 Transient suppressor diodes
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LCD01
TELEVISION EHT TRANSFORMERS
BYW96E PH
smd code Z9P
germanium transistor
BY527
EQUIVALENT BYD33D
BAX12
BB212
BB515
BBY31
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IN3599
Abstract: 1N9168 1N4242 IN485 IN625 1N20S 1N4389 1N4243 in648 IN458a
Text: jomltron « • - _ SemitronicsCorp. ■ SS 481.1541= DD0DB05 3 ■ H iç rrp tp sem ico nd u c to r s IN T E X / SEMITRONICS CORP S7E D _ , , , / / / silicon diodes Reverse Current «A)150°C (See Notes) 5.0 SO 56 50 50 6.5 2.0 1.0 2.0 2.0 15 1.5
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1N194A
1N195
1K200
1N201
JN202
IN4829
1N4J30
MP035Ã
MPD302
MPB401
IN3599
1N9168
1N4242
IN485
IN625
1N20S
1N4389
1N4243
in648
IN458a
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1N4151f
Abstract: 1N4152 ditty 1N4151 1N4153 1N4154 J103 1N4151-1N4152-1N4153-1N4154
Text: 1775470 C O D I SEMICONDUCTOR IN C -L U ,-— TO 90D 0 0 5 7 9 D y_ — // DE | l 7 7 S 4 7 D □ □□□57ci 5 äliiä CODI Semiconductor, Inc. 1N 4151-1N 4152-1N 4153-1N 4154 HIGH SPEED DIODES • SILICON PLANAR EPITAXIAL D O -35 OUTLINE • C .4 p F MAX
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l77S47D
1N4151-1N4152-1N4153-1N4154
1-800-232-CQDI
7033il
1N4151f
1N4152
ditty
1N4151
1N4153
1N4154
J103
1N4151-1N4152-1N4153-1N4154
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1N6227
Abstract: silec GG 84 1n623 2G300 chn 543 IC HXJ 2038 1N52398 IN5240 1n48 zener diode
Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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IN3599
Abstract: IN433A IN625 1N3068 1N218 1N4147 IN648 1N3069 1N3067 IN485
Text: « • - _ j o m lt r o n SemitronicsCorp. ■ 481.1541= DD0DB05 3 ■ H iç rrp tp S S sem ico nd u c to r s IN T E X / SEMITRONICS CORP S7E D _ , , , / / / - <DI V t silicon diodes Reverse Current «A)150°C (See Notes) 5.0 SO 56 50 50 6.5 2.0
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DD0DB05
IN3599
IN433A
IN625
1N3068
1N218
1N4147
IN648
1N3069
1N3067
IN485
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