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    Catalog Datasheet MFG & Type Document Tags PDF

    IN2222A

    Abstract: transitron catalog TCR43 TM106 IN443 1n9448 sv4091 IN4868 diode 3N68 IN536
    Text: ron Tro nsitron electronic corporation e I ron 168 Albion Street . Wakefield. Massachusetts 01881 WAKEFIELD, MASSACHUSE TTS BOSTON, MASSACHUSETTS MELROSE, MASSACHUSETTS NUEVO LAREDO, MEXICO BERKSHIRE, ENGLAND PARIS, FRANCE AMSTERDAM, THE NETHERLANDS ~ ciectl'onic corpOI'atioll


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    2sc3052ef

    Abstract: 2n2222a SOT23 TRANSISTOR SMD MARKING CODE s2a 1N4148 SMD LL-34 TRANSISTOR SMD CODE PACKAGE SOT23 2n2222 sot23 TRANSISTOR S1A 64 smd 1N4148 SOD323 semiconductor cross reference toshiba smd marking code transistor
    Text: Small Signal Discretes Selection Guide [ www.infineon.com/smallsignaldiscretes ] 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 8 RF MOSFET 16 Schottky Diodes 18 ESD and EMI Protection Devices and Filters


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    24GHz BF517 B132-H8248-G5-X-7600 2sc3052ef 2n2222a SOT23 TRANSISTOR SMD MARKING CODE s2a 1N4148 SMD LL-34 TRANSISTOR SMD CODE PACKAGE SOT23 2n2222 sot23 TRANSISTOR S1A 64 smd 1N4148 SOD323 semiconductor cross reference toshiba smd marking code transistor PDF

    in4151

    Abstract: 1N4151 D0-35 DO35 package
    Text: 1N4151 500 mW EPITAXIAL PLANAR DIODES Data Sheet Mechanical Dimensions Description JEDEC D0-35 .120 .200 .060 .090 Features 1.00 Min. .018 .022 n PLANAR PROCESS n INDUSTRY STANDARD DO-35 PACKAGE n 500 mW POWER DISSIPATION n MEETS UL SPECIFICATION 94V-0 Maximum Ratings


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    1N4151 D0-35 DO-35 IN4151 100nS in4151 1N4151 D0-35 DO35 package PDF

    in4151

    Abstract: IN4150 IN4153 IN4153 diode N4150 1N4150 1N4151 1N4153 IEC134
    Text: • bbSB'm N AUER 202 ooab^oa 1N4150 1N4151 1N4153 hapx PHILIPS/DISCRETE bTE D ULTRA-HIGH-SPEED SILICON DIODES Whiskerless diodes in su b m in ia tu re DO -35 envelopes. T he IN 4 1 5 0 is p rim a rily intended fo r general purpose use in co m p u te r and in d u stria l applications.


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    bb53131 1N4150 1N4151 1N4153 DO-35 IN4150 IN4151 IN4153 N4150 IN4153 diode 1N4150 1N4151 1N4153 IEC134 PDF

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    Abstract: No abstract text available
    Text: 1N914 THRU FORWARD INTERNATIONAL ELECTRONICS LTD. SEM ICO N D U CTO R 4^ 43 TECHNICAL DATA_ TECHNICAL SPECIFICATIONS OF HIGH SPEED SWITCHING DIODES VOLTAGE RANGE -50 to 100 Volts CURRENT - 0.075 to 0.2 Ampere FEATURES ' ‘ *


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    1N914 IL-STD-202E, N4148MJ 1N4148\ 11N914 1N4454 1N4148 PDF

    in4151

    Abstract: IN4150 IN4153 diode IN4153 N4150 1N4151 1N4153 1N4150 IEC134 colourcoded diodes
    Text: • bbSB'm 1N4150 1N4151 1N4153 OOEb'îOB 202 H A P X N APIER P HILI PS/D ISCR ETE b^E » ULTRA-HIGH-SPEED SILICON DIODES Whiskerless diodes in su b m in ia tu re DO -35 envelopes. T he IN 4 1 5 0 is p rim a rily intended fo r general purpose use in co m p u te r and in d u stria l applications.


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    1N4150 1N4151 1N4153 DO-35 IN4150 IN4151 IN4153 N4150 IN4153 IN4153 diode 1N4151 1N4153 1N4150 IEC134 colourcoded diodes PDF

    TIS43

    Abstract: equivalent of transistor bc214 BF257 Texas equivalent of transistor bc212 bc 214 2N696 TEXAS INSTRUMENTS Q2T2222 TIS70 BFR40 kd 2060 transistor BF195 equivalent
    Text: The Transistor and Diode Data Book for Design Engineers Volume II Northern European Edition IMPORTANT NOTICES Texas Instrum ents Ltd ., reserves the rig h t to make changes at any tim e in order to improve design and to supply the best p ro d u c t possible.


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    2S301 BS9300-C-598 2S305 BS9300-C-366 2S307 2S322 CV7396 BS9300-C-396 CV7647 BS9300-C-647 TIS43 equivalent of transistor bc214 BF257 Texas equivalent of transistor bc212 bc 214 2N696 TEXAS INSTRUMENTS Q2T2222 TIS70 BFR40 kd 2060 transistor BF195 equivalent PDF

    IN4152

    Abstract: IN4606 in4447 IN916B IN4608 IN917 IN4150 in914b IN4149 IN4164
    Text: 1 Small Signal Diodes Explanation of Device Coding Devices prefixed " 1 N " are JG DEC Joint Electronic Device Engineering Council registered devices. These-type numbers are recognised in the USA. Devices prefixed " 1 S " are Texas Instruments in-house numbers.


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    IS960 IS961 DO-35 IN4152 IN4606 in4447 IN916B IN4608 IN917 IN4150 in914b IN4149 IN4164 PDF

    Untitled

    Abstract: No abstract text available
    Text: 500 mW EPITAXIAL PLANAR DIODES D ata Sheet m iconductor Features • PLANAR PROCESS ■ INDUSTRY STANDARD DO-35 PACKAG E ■ 500 mW POWER DISSIPATION ■ MEETS UL SPECIFICATION 94V-0 1N4151 E le c t r ic a l C h a r a c t e r is t ic s @ 2 5 ° C . M a x h n u n R atings


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    DO-35 1N4151 IN4151 51X25X30cm 21X21X5 47X22X27cm PDF

    IN4149

    Abstract: cv8790 CV7040 Diode BAY 61 IS923 IN917 CV8617 texas is920 IS920 IN4448
    Text: 1 Small Signal Diodes Explanation of Device Coding Devices prefixed " 1 N " are JGDEC Joint Electronic Device Engineering Council registered devices. These-type numbers are recognised in the USA. Devices prefixed "1 S " are Texas Instruments in-house numbers.


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    CV8790 IS922 DO-35 CV9637 IN4448 DS59-61/03/302 BAY71 DS59-61/03/303 IN4149 CV7040 Diode BAY 61 IS923 IN917 CV8617 texas is920 IS920 PDF

    TELEVISION EHT TRANSFORMERS

    Abstract: BYW96E PH smd code Z9P germanium transistor BY527 EQUIVALENT BYD33D BAX12 BB212 BB515 BBY31
    Text: Philips Semiconductors Diodes Contents page SELECTION GUIDE Small-signal diodes 5 Tuner diodes 7 FM detection diodes 8 Low leakage diodes 8 Schottky barrier switching diodes 9 Stabistors Voltage regulators 9 10 Voltage reference diodes 11 Transient suppressor diodes


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    LCD01 TELEVISION EHT TRANSFORMERS BYW96E PH smd code Z9P germanium transistor BY527 EQUIVALENT BYD33D BAX12 BB212 BB515 BBY31 PDF

    IN5342B

    Abstract: diodes IN4001 IN4736A IN4448 IN4933-7 IN5921-58B IN914A-B GT60-005-10 UF160-005-06 RGP10A.M
    Text: TABLE OF CONTENTS GENERAL PURPOSE RECTIFIERS . FAST RECOVERY RECTIFIERS . ULTRA FAST RECOVERY RECTIFIERS .


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    UF30-005R-10R 30DFI-6) UF50-005-10 HER501-8) UF5400-8 UF60-005-10 UF80-005-06 UF160-005-06 FES16AT-JT) UF300-005-06 IN5342B diodes IN4001 IN4736A IN4448 IN4933-7 IN5921-58B IN914A-B GT60-005-10 UF160-005-06 RGP10A.M PDF

    Untitled

    Abstract: No abstract text available
    Text: 1N4150 1N4151 1N4153 b b S B ' m D02b^03 202 H A P X N AUER PHILIPS/DISCRETE b^E D _X' V ULTRA-HIGH-SPEED SILICON DIODES Whiskerless diodes in subminiature DO-35 envelopes. The IN4150 is primarily intended for general purpose use in computer and industrial applications.


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    1N4150 1N4151 1N4153 DO-35 IN4150 IN4151 IN4153 N4150 IN4151 IN4153 PDF