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Fairchild Semiconductor Corporation IN3595
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IN359 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
IN2222A Abstract: transitron catalog TCR43 TM106 IN443 1n9448 sv4091 IN4868 diode 3N68 IN536 Text: ron Tro nsitron electronic corporation e I ron 168 Albion Street . Wakefield. Massachusetts 01881 WAKEFIELD, MASSACHUSE TTS BOSTON, MASSACHUSETTS MELROSE, MASSACHUSETTS NUEVO LAREDO, MEXICO BERKSHIRE, ENGLAND PARIS, FRANCE AMSTERDAM, THE NETHERLANDS ~ ciectl'onic corpOI'atioll	Original	PDF
IN3595 Abstract: 1N3595 Text: COMPUTER DIODE 1N3595=JAN- J A N T X & jantxv 1N3595 150 mA, S w itch in g ABSO LUTE MAXIMUM RATINGS, AT 25“C FEATURES Peak Reverse V o lta g e .125V Reverse Breakdown V o lt a g e .150V	OCR Scan	PDF	1N3595 150mAdc 500mA 83Vdc 125Vdc 79Vdc 92Vdc 30Vdc 50mAdc 74Vdc IN3595 1N3595
MC2259 Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214 Text: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the	OCR Scan	PDF
SDT9207 Abstract: SDT9202 SDT9209 SDT9204 SDT9208 SDT9203 SDT9205 SDT9201 2N3236 2N6046 Text: 39 SILICON POWER TRANSISTORS CURREN T GAIN SATURATION VOLTAGES s> TYPE CASE NUMBER TYPE VCBO V VCEO V IV V EBO hFE MIN. I MAX. VCE <s> 'c A V CE s V V BE:(s) I V C A I B A 15 AMP SILICON SIPN 2 N3055 2N3235 2N3236 TO-3 TO-3 TO-3 100 65 90 60 55 90 7.0 7.0	OCR Scan	PDF
IN3599 Abstract: 1N9168 1N4242 IN485 IN625 1N20S 1N4389 1N4243 in648 IN458a Text: jomltron « • - _ SemitronicsCorp. ■ SS 481.1541= DD0DB05 3 ■ H iç rrp tp sem ico nd u c to r s IN T E X / SEMITRONICS CORP S7E D _ , , , / / / silicon diodes Reverse Current «A)150°C (See Notes) 5.0 SO 56 50 50 6.5 2.0 1.0 2.0 2.0 15 1.5	OCR Scan	PDF	1N194A 1N195 1K200 1N201 JN202 IN4829 1N4J30 MP035Ã MPD302 MPB401 IN3599 1N9168 1N4242 IN485 IN625 1N20S 1N4389 1N4243 in648 IN458a
IN3599 Abstract: IN433A IN625 1N3068 1N218 1N4147 IN648 1N3069 1N3067 IN485 Text: « • - _ j o m lt r o n SemitronicsCorp. ■ 481.1541= DD0DB05 3 ■ H iç rrp tp S S sem ico nd u c to r s IN T E X / SEMITRONICS CORP S7E D _ , , , / / / - <DI V t silicon diodes Reverse Current «A)150°C (See Notes) 5.0 SO 56 50 50 6.5 2.0	OCR Scan	PDF	DD0DB05 IN3599 IN433A IN625 1N3068 1N218 1N4147 IN648 1N3069 1N3067 IN485