Untitled
Abstract: No abstract text available
Text: VITESSE SEMICONDUCTOR CORPORATION Advance Product Information SDH/SONET 2.5Gb/s Laser Diode Driver VSC7927 Features • Rise Times Less Than 100ps • Direct Access to Modulation and Bias FET’s • High Speed Operation Up to 2.5 Gb/s NRZ Data • Data Density Monitors
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VSC7927
100ps
VSC7927
G52201-0,
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VSC7928
Abstract: No abstract text available
Text: VITESSE SEMICONDUCTOR CORPORATION Advance Product Information SDH/SONET 3.2Gb/s Laser Diode Driver VSC7928 Features • Rise Times Less Than 100ps • Data Density Monitors • High Speed Operation Up to 3.2Gb/s NRZ Data • On-chip Reclocking Register • On-chip Mux for Clocked or Non-clocked
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VSC7928
100ps
VSC7928
G52246-0,
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CLK5010
Abstract: fet 741 VSC7925
Text: VITESSE SEMICONDUCTOR CORPORATION Preliminary Datasheet SDH/SONET 2.5Gb/s Laser Diode Driver VSC7925 Features • Rise Times Less Than 100ps • Single Supply • High Speed Operation Up to 2.5Gb/s NRZ Data • Direct Access to Modulation and Bias FET’s
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VSC7925
100ps
VSC7925
G52157-0,
CLK5010
fet 741
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mip 291
Abstract: fet 741 VSC7923
Text: VITESSE SEMICONDUCTOR CORPORATION Preliminary Data Sheet VSC7923 SONET/SDH 2.5Gb/s Laser Diode Driver Features Applications • SONET/SDH at 622Mb/s, 1.244Gb/s, 2.488Gb/s, 3.125Gb/s • Full-Speed Fibre Channel 1.062Gb/s • Rise Times Less Than 100ps • High Speed Operation (Up to 2.4Gb/s NRZ Data)
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VSC7923
622Mb/s,
244Gb/s,
488Gb/s,
125Gb/s
062Gb/s)
100ps
VSC7923
G52203-0,
mip 291
fet 741
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fet 741
Abstract: VSC7924
Text: VITESSE SEMICONDUCTOR CORPORATION Advance Product Information SDH/SONET 2.5Gb/s Laser Diode Driver VSC7924 Features • Rise Times Less Than 100ps • Single Power Supply • High Speed Operation Up to 2.5Gb/s NRZ Data • Direct Access to Modulation and Bias FET’s
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VSC7924
100ps
VSC7924
G52156-0,
fet 741
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tl 0841
Abstract: IC TL 0841 LM348J LM14B LM741 national semiconductor "Op Amp" lm 741 universal input voltage power supply V01TAC ic tl 741 LM349N
Text: National Semiconductor February 1995 LM148/LM149 Series Quad 741 Op Amp LM148/LM248/LM348 Quad 741 Op Amps LM149/LM349 Wide Band Decompensated A v (m in General Description Features The LM148 series is a true quad 741. It consists of four independent, high gain, internally compensated, low power
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LM148/LM149
LM148/LM248/LM348
LM149/LM349
LM148
tl 0841
IC TL 0841
LM348J
LM14B
LM741 national semiconductor
"Op Amp" lm 741
universal input voltage power supply
V01TAC
ic tl 741
LM349N
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747 dip-14 raytheon
Abstract: 741 dip-14 RC747 RC747N RC747T RM747 RM747D RM747T FD6666 e3009
Text: RC747 Section 4 Combining the features of the 741 with the close parameter matching and tracking of a dual device on a monolithic chip results in unique per formance characteristics. Excellent channel separation allows the use of the dual device in all single 741 operational amplifier applications
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RC747
RC/RM747
RM747,
RC747,
400M11
100kHz
100kn
10kHz
747 dip-14 raytheon
741 dip-14
RC747
RC747N
RC747T
RM747
RM747D
RM747T
FD6666
e3009
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747j
Abstract: FD6666 RC747 RC747N RC747T RM747 RM747D RM747T 747 dip-14 raytheon FD6666 equivalent
Text: RC747 Section 4 Combining the features of the 741 with the close parameter matching and tracking of a dual device on a monolithic chip results in unique per formance characteristics. Excellent channel separation allows the use of the dual device in all single 741 operational amplifier applications
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RC747
RC/RM747
RM747,
RC747,
400M11
100kHz
100kn
10kHz
747j
FD6666
RC747
RC747N
RC747T
RM747
RM747D
RM747T
747 dip-14 raytheon
FD6666 equivalent
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IC TL 0841
Abstract: tl 0841 KE4393 LM4110 lm 741 op amp LM 741 op amp single supply LM349N p1087e LM348J "Op Amp" lm 741
Text: NATL SEMICOND LINEAR hS01124 0DbflH33 fi SEE D t w o s -w S e m ic o n d u c to r LM148/LM149 Series Quad 741 Op Amp LM148/LM248/LM348 Quad 741 Op Amps LM149/LM249/LM349 Wide Band Decompensated (Av (m in ) = 5) General Description Features The LM148 series is a ttue quad 741. It consists of four
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0Gbfl333
LM148/LM149
LM148/LM248/LM348
LM149/LM249/LM349
LM148
AlsL/H/7788-20
00bfi3M4
t-79-05-40
LM148J,
IC TL 0841
tl 0841
KE4393
LM4110
lm 741 op amp
LM 741 op amp single supply
LM349N
p1087e
LM348J
"Op Amp" lm 741
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IL 741
Abstract: philips lps 100 BUK441 BUK441-100A BUK441-100B P101
Text: PHILIPS INTERNATIONAL L.5E D H 711Dfl5t> 0QL.3T-H 741 • PHIN Philips Sem iconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use In
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711Dfl5t,
BUK441-100A/B
BUK441
-100A
-100B
-SOT186
IL 741
philips lps 100
BUK441-100A
BUK441-100B
P101
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philips lps 100
Abstract: BUK441 BUK441-100A BUK441-100B P101
Text: PHILIPS INTERN ATI ONAL fc.SE D H 7110fl5t> 0Qfa3*m 741 « P H I N Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use In
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711002b
BUK441-100A/B
-SOT186
BUK441
-100A
-100B
711DASfc.
philips lps 100
BUK441-100A
BUK441-100B
P101
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75327C
Abstract: SN7401 transistor bf 175 75S208 26S10M SN75129 SN75107 SN55109A
Text: m - The Line Driver and Line Receiver Data Book for Design Engineers 1977 T exas In s t r u m e n t s INCORPORATED LC C 4290 741 0 5 - 2 7 - E C P rin te d in U .S .A . IM PO R TA N T NOTICES Texas Instruments reserves the right to make changes at any time in
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CC-415.
S-104
75327C
SN7401
transistor bf 175
75S208
26S10M
SN75129
SN75107
SN55109A
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transistor BD6
Abstract: bd645 transistor BD643 H 649 A transistor
Text: J PHILIPS INTERNATIONAL SbE D m BD643; BD645; BD647; BD649; BD651 _ 7110fi2b 0042'i5b 741 I IPHIN -r-j 7 SILICON DARLINGTON POWER TRANSISTORS NPN epitaxial-base transistors in a m onolithic Darlington circu it and housed in a T 0-22 0 envelope. They are intended fo r o u tp u t stages in audio equipment, general amplifiers, and analogue switching
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BD643;
BD645;
BD647;
BD649;
BD651
7110fi2b
BD644,
BD646,
BD648,
BD650
transistor BD6
bd645 transistor
BD643
H 649 A transistor
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lg bd645
Abstract: darlington bd 645 BD649 philips bd649 PNP transistor BD649 B0645 BD645 BD643 BD646 BD647
Text: BD643; BD645; BD647; BD649; BD651 PHILIPS I N T ERNATIONAL 5bE D • 7110fl2b 0 0 4 2 ^ 741 « R H I N SILICON DARLINGTON POWER TRANSISTORS NPN epitaxial-base transistors in a m onolithic Darlington circu it and housed in a T 0-22 0 envelope. They are intended fo r o u tp u t stages in audio equipment, general amplifiers, and analogue switching
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BD643;
BD645;
BD647;
BD649;
BD651
7110fl2b
T0-220
BD644,
BD646,
BD648,
lg bd645
darlington bd 645
BD649 philips
bd649 PNP transistor
BD649
B0645
BD645
BD643
BD646
BD647
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Relay cf 318 9.0
Abstract: Relay cf 318 ez 741 DM 311 BG 215CN DM 311 BG 35 AB 314a 741 CN 211-DA msta
Text: ASEA Catalogue RK 74-10 E E d itio n 1 February 1£¡73 F ija R, P art 1 Component block type RTXE [c|ô|mTbI with diodes, thermistors or resistors • * * * * Requires no extra space To be mounted at the rear o f the relay terminal base The encapsulated block hermetically
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pin diagram for
Abstract: No abstract text available
Text: Preliminary Datasheet VSC7925 sdh/s o n e t 2.5Gb/s Laser Diode Driver Features • Rise Times Less Than lOOps • High Speed Operation Up to 2.5Gb/s NRZ Data • Single-ended Inputs Single Supply Direct Access to Modulation and Bias FET’s Data Density Monitors
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VSC7925
VSC7925
G52157-0,
pin diagram for
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cb 237
Abstract: 1001dl 741 AMP DB39-931 in 741 DIODE CB-237 CB200 DH741931 ci 741 a 741 j
Text: « pack 931» diode/thyristor 12 Amp m o d u les d io d e/th y risto r « p a c k 931 »12 A m p V DRM or T y p es •f s m / •t s m 10 ms U se C ase ro cn O V RRM I r p e r leg @ p a r bras VR >GT RGK - 1 k n 125 °C V (A) (m A) (UA) (m A ) 50 100 200
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CB-200
741J37
CB-236
CB-200
CB-237
CB-335
CB-361
cb 237
1001dl
741 AMP
DB39-931
in 741 DIODE
CB-237
CB200
DH741931
ci 741
a 741 j
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facon diode
Abstract: 40931 thyristor N 600 ch 14 CA 40931 ci 741 facon 741J 741 AMP 37741 1001dl
Text: FACON 4SE D • 345b2G3 □□□□□IE 4 HIFCN FACON SEMICONDUCTEURS/SEMICONDUCTORS T-Z3-OI « pack 931» diode/thyristor 12 Amp modules diode/thyristor « pack 931 »12 Amp V DRM or T y p es •f s m / •t s m 10 ms U se C ase ro cn n V RRM I r p e r leg
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345b2D3
T-23-0\
cb-200
741j37
cb-236
facon diode
40931
thyristor N 600 ch 14
CA 40931
ci 741
facon
741J
741 AMP
37741
1001dl
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Untitled
Abstract: No abstract text available
Text: Advance Product Information SDH/SONET 2.5 Gb/s Laser Diode Driver VSC7923 Features • Rise Times Less Than lOOps • Single Power Supply • High Speed Operation * Direct Access to Modulation and Bias FET’s Up to 2.4 Gb/s NRZ Data . Data Density Monitors
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VSC7923
VSC7923
G52156-0,
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pin diagram of ic 741
Abstract: 741 ic metal package
Text: SEMICONDUCTOR CORPORATION Preliminary Datasheet s d h /s o n e t VSC7925 z.sGb/s Laser Diode Driver Features • Rise Times Less Than lOOps Single Supply • High Speed Operation Up to 2.5Gb/s NRZ Data Direct Access to Modulation and Bias FET’s • Single-ended Inputs
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VSC7925
VSC7925
G52157-0,
pin diagram of ic 741
741 ic metal package
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR CORPORATION Advance Product Information s d h / s o n e t 2.5 Gb/s VSC7923 Laser Diode Driver Features • Rise Times Less Than lOOps • Single Power Supply • High Speed Operation * Direct Access to Modulation and Bias FET’s Up to 2.4 Gb/s NRZ Data
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VSC7923
VSC7923
G52156-0,
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Untitled
Abstract: No abstract text available
Text: Advance Product Information s d h / s o n e t z.sGb/s VSC7924 Laser Diode Driver Features • Rise Times Less Than lOOps • Single Power Supply • High Speed Operation * Direct Access to Modulation and Bias FET ’s Up to 2.5Gb/s NRZ Data . Data Density Monitors
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VSC7924
VSC7924
622Mbduct
G52156-0,
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125C42
Abstract: No abstract text available
Text: SEMICONDUCTOR CORPORATION Advance Product Information s d h /s o n e t VSC7924 z.sGb/s Laser Diode Driver Features • Rise Times Less Than lOOps • High Speed Operation Up to 2.5Gb/s NRZ Data • Single Power Supply * Direct Access to Modulation and Bias FET’s
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VSC7924
VSC7924
G52156-0,
125C42
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741 PIN DIAGRAM
Abstract: No abstract text available
Text: SEMICONDUCTOR CORPORATION Advanced Product Information SDH/SONET2.4 Gb/s Laser Diode Driver VSC7924 Features • Rise Times Less Than lOOps • Single Power Supply • High Speed Operation * Direct Access to Modulation and Bias FET’s Up to 2.4 Gb/s NRZ Data
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VSC7924
VSC7924
G52156-0,
741 PIN DIAGRAM
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