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Infineon Technologies AG ILB03N60 ILB03N60 - Insulated Gate Bipolar Transistor, 4.5A, 600V, N-Channel '
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Rochester Electronics	ILB03N60		1,000		1	1 $0.25 10 $0.25 100 $0.235 1000 $0.2125 10000 $0.2125	Buy Now

ILB03N60 Datasheets (3)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
ILB03N60		Infineon Technologies	IGBT Chip, N Channel, 600V, TO-263, 3-Pin		Original	PDF
ILB03N60		Infineon Technologies	3A / 600V IGBT with monolithically integrated diode for resonant-halfbridge topologies in lighting ballast (40W-120W)		Original	PDF
ILB03N60E3045A		Infineon Technologies	IGBTs & DuoPacks - 3A / 600V LightMOS in TO263		Original	PDF

ILB03N60 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Q67040-S4628 Abstract: ic 5304 1a Q67040-S4626 ILA03N60 ILB03N60 ILD03N60 ILP03N60 IC 4043 configuration Text: ILA03N60, ILP03N60 ILB03N60, ILD03N60 ^ LightMOS Power Transistor C • • • • • • • New high voltage technology designed for ZVS-switching in lamp ballasts IGBT with integrated reverse diode 4A current rating for reverse diode Up to 10 times lower gate capacitance than MOSFET	Original	PDF	ILA03N60, ILP03N60 ILB03N60, ILD03N60 P-TO-220-3-1 O-220AB) ILA03N60 ILB03N60 Q67040-S4628 ic 5304 1a Q67040-S4626 ILA03N60 ILB03N60 ILD03N60 ILP03N60 IC 4043 configuration
ILA03N60 Abstract: ILB03N60 Q67040-S4627 SDP04S60 Infineon MOSFET 1000V Text: ILB03N60 ^ LightMOS Power Transistor C • • • • • • • • New high voltage technology designed for ZVS-switching in lamp ballasts IGBT with integrated reverse diode 4A current rating for reverse diode Up to 10 times lower gate capacitance than MOSFET	Original	PDF	ILB03N60 P-TO-263-3-2 O-263AB) Q67040-S4627 ILA03N60 ILB03N60 Q67040-S4627 SDP04S60 Infineon MOSFET 1000V
Untitled Abstract: No abstract text available Text: ILP03N60, ILB03N60 ILD03N60 ^ LightMOS Power Transistor C • • • • New revolutionary high voltage technology designed for ZVSswitching in lamp ballasts IGBT with integrated reverse diode Avalanche rated 150°C operating temperature P-TO-220-3-1 TO-220AB	Original	PDF	ILP03N60, ILB03N60 ILD03N60 P-TO-220-3-1 O-220AB) P-TO-263-3-2 O-263AB) P-TO-252-3-1 O-252AA) ILP03N60
ILA03N60 Abstract: ILB03N60 ILD03N60 ILP03N60 Q67040-S4626 Q67040-S4628 Text: ILA03N60, ILP03N60 ILB03N60, ILD03N60 ^ LightMOS Power Transistor C • • • • • • • New high voltage technology designed for ZVS-switching in lamp ballasts IGBT with integrated reverse diode 4A current rating for reverse diode Up to 10 times lower gate capacitance than MOSFET	Original	PDF	ILA03N60, ILP03N60 ILB03N60, ILD03N60 P-TO-220-3-1 O-220AB) ILA03N60 ILB03N60 ILA03N60 ILB03N60 ILD03N60 ILP03N60 Q67040-S4626 Q67040-S4628