J3L SMD DIODE
Abstract: LNJ080V6BRA LKJ080V6BRA smd zener diode code DE YB66 product deign 9L20 Ex07 LNJ080V6 smd zener diode code bf
Text: Designed by 23-1 ut Si n a i l /P a o d n c lM iib g €hecked % .áfpoved ¥ i LNJÖ8QV6BRA 1' li m tt- f . F « DEVELOPMENT SPECIFICATION Ar au, is m am e . product t i s Side v ie w tv o e c h ip LED i CUSTOMER PRODUCT NUMBER MATSUSHITA GLOBAL CODE_
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IMC80V6BRA
yB66Kw
LNJ080V6BRA
LKJ080V6BRA
S62-YW0S7-07
C23-2>
J3L SMD DIODE
smd zener diode code DE
YB66
product deign
9L20
Ex07
LNJ080V6
smd zener diode code bf
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74S74
Abstract: WD1050
Text: W E S T E R N D IG IT A L C A O R P O R T I O N D1050 WD1050 SMD Controller/Formatter FEATURES • 16 BIT HOST INTERFACE |Q LO ^ CO CM • 9.677 MBITS/SEC DATA RATE O •OÎCOh-COlO^COCM' fe û Û Û Û Û Û Q Û Û Û Û Û Û Û Û Û • SINGLE/MULTIPLE SECTOR TRANSFERS
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WD1050
tmi44
74S74
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transistor TT 3043
Abstract: IJEAD
Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE681 SERIES FEATURES_ • HIGH GAIN BANDWIDTH PRODUCT: h = 8 GHz • LOW NOISE FIGURE: 1.2dB at 1 GHz 1.6 dB at 2 GHz • HIGH ASSOCIATED GAIN: 15 dB at 1 GHz 12 dB AT 2 GHz • LOW COST 00 CHIP
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NE681
b4E752S
D0hSb73
transistor TT 3043
IJEAD
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Untitled
Abstract: No abstract text available
Text: CY7B185 CYPRESS SEMICONDUCTOR Features Functional Description • BiCMOS for optimum speed/power T h e CY7B185 is a h ig h -p e rfo rm a n c e B iC M O S static R A M organized as 8K w ords by 8 bits. T hese R A M s are devel o p ed by A spen S em iconductor C o rp o ra
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CY7B185
CY7B185
300-milw
12LMB
28-Lead
300-M
10LMB
28-Pin
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D0213AA
Abstract: D0-213AA BYM06-50 BYM06-600 RGL34A RGL34B RGL34D RGL34G RGL34J
Text: BYM06-50 THRU BYM06-600 RGL34A THRU RGL34J SURFACE MOUNT GLASS PASSIVATED FAST SWITCHING JUNCTION RECTIFIER Voltage - 50 to 600 Volts Current - 0.5 Amperes FEATURES ♦ For surface mounted applications ♦ High temperature metallurgically bonded ♦ Glass passivated junction
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D0-213AA
BYM06-50
BYM06-600
RGL34A
RGL34J_
MIL-S-19500
Vsig-50mVp-p
50/100ns/cm
D0213AA
D0-213AA
BYM06-600
RGL34B
RGL34D
RGL34G
RGL34J
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